Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393168
Qiuhong Li, M. Takahashi, T. Horiuchi, T. Saito, Shouyu Wang, S. Sakai
Statistical distribution of the threshold voltage Vth for both p-and n-channel Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors (FeFETs) is reported. The standard deviations of Vth are within 7-8% and 3-5% of the memory window for the p-and n-channel FeFETs, respectively. The temperature dependence of FeFETs is also studied from 27 to 85degC. The distribution measurement at the elevated temperatures exhibits small standard deviations. Data retention characteristic is studied at 85degC and the ratio of on/off-state drain-current is nearly 104 at 85degC after more than 105 s (nearly 2 days) of the measurement. The results show that the FeFETs function as nonvolatile memories at elevated temperatures up to 85degC.
{"title":"Statistical Threshold-Voltage Distribution and Elevated-Temperature Operations of Pt/SrBi2Ta2O9/Hf-Al-O/Si MFIS FETs","authors":"Qiuhong Li, M. Takahashi, T. Horiuchi, T. Saito, Shouyu Wang, S. Sakai","doi":"10.1109/ISAF.2007.4393168","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393168","url":null,"abstract":"Statistical distribution of the threshold voltage Vth for both p-and n-channel Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors (FeFETs) is reported. The standard deviations of Vth are within 7-8% and 3-5% of the memory window for the p-and n-channel FeFETs, respectively. The temperature dependence of FeFETs is also studied from 27 to 85degC. The distribution measurement at the elevated temperatures exhibits small standard deviations. Data retention characteristic is studied at 85degC and the ratio of on/off-state drain-current is nearly 104 at 85degC after more than 105 s (nearly 2 days) of the measurement. The results show that the FeFETs function as nonvolatile memories at elevated temperatures up to 85degC.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121142131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393283
Yanyan Zhu, Jinrong Cheng, Shengwen Yu, Wenbiao Wu, Z. Meng
Multiferroic BiFeO3-CoFe2O4 (BFO-CFO) double-layer thin film has been deposited on platinized silicon substrate by pulsed-laser deposition. The BFO and CFO thin layers are deposited at 450 and 600 degC respectively. The diffraction peaks from spinel CoFe2O4 phases can be observed from the x-ray diffraction patterns of the double-layer BFO-CFO films. Dielectric constant and loss of the BFO-CFO films are of around 60 and 0.06 respectively, changing little with increasing the frequency. The leakege current density is about 10-6 A/cm2 under the field of 100 kV/cm. BFO-CFO thin films exhibit good ferromagnetic properties with the saturation magnetization of 120 emu/cm3 .
{"title":"Multiferroic Double-layer BiFeO3-CoFe2O4 Composite Films Prepared by Pulsed-Laser Deposition","authors":"Yanyan Zhu, Jinrong Cheng, Shengwen Yu, Wenbiao Wu, Z. Meng","doi":"10.1109/ISAF.2007.4393283","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393283","url":null,"abstract":"Multiferroic BiFeO<sub>3</sub>-CoFe<sub>2</sub>O<sub>4</sub> (BFO-CFO) double-layer thin film has been deposited on platinized silicon substrate by pulsed-laser deposition. The BFO and CFO thin layers are deposited at 450 and 600 degC respectively. The diffraction peaks from spinel CoFe<sub>2</sub>O<sub>4</sub> phases can be observed from the x-ray diffraction patterns of the double-layer BFO-CFO films. Dielectric constant and loss of the BFO-CFO films are of around 60 and 0.06 respectively, changing little with increasing the frequency. The leakege current density is about 10<sup>-6</sup> A/cm<sup>2</sup> under the field of 100 kV/cm. BFO-CFO thin films exhibit good ferromagnetic properties with the saturation magnetization of 120 emu/cm<sup>3</sup> .","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125629684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393347
Baoquan Qin, Yi Chen, Yihang Jiang, Yuzhi Jiang, Xi Yue, D. Xiao, Jianguo Zhu
Novel perovskite (1-x)BiInO3-xPbTiO3 (BIPT) ceramics with high Curie temperature were prepared by conventional oxide process. The experiment results show that it was difficult to synthesize BIPT ceramics with the stable perovskite phase unless the content of PbTiO3 is more than 75%. Moreover, the morphotropic phase boundary (MPB) composition of BIPT has been predicted in the range of x=0.85-0.95. This systems were hardly to poled based on the large tetragonality(c/a>1.06) and high electrical conductivity. It can be also observed that the BIPT ceramics exhibit a clear intergranular fracture.
{"title":"Preparation and Characterization of (1-x) BiInO3-xPbTiO3 ceramics","authors":"Baoquan Qin, Yi Chen, Yihang Jiang, Yuzhi Jiang, Xi Yue, D. Xiao, Jianguo Zhu","doi":"10.1109/ISAF.2007.4393347","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393347","url":null,"abstract":"Novel perovskite (1-x)BiInO3-xPbTiO3 (BIPT) ceramics with high Curie temperature were prepared by conventional oxide process. The experiment results show that it was difficult to synthesize BIPT ceramics with the stable perovskite phase unless the content of PbTiO3 is more than 75%. Moreover, the morphotropic phase boundary (MPB) composition of BIPT has been predicted in the range of x=0.85-0.95. This systems were hardly to poled based on the large tetragonality(c/a>1.06) and high electrical conductivity. It can be also observed that the BIPT ceramics exhibit a clear intergranular fracture.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131288656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393343
J. Takarada, K. Tahara, H. Ueda, K. Imoto, M. Date, E. Fukada, K. Yamamoto, Y. Tajitsu
We studied a novel technique for controlling the elastic coefficient of a piezoelectric lead zirconate titanate (PZT) ceramic by connecting a negative-capacitance circuit that behaves as a "negative capacitor". Thus, we can realize control through a mechanism in which PZT is softened and hardened. On the basis of this technology, we developed a simple experimental system for intercepting elastic waves in the frequency range from 8 kHz to 110 kHz. We determined the attenuation factor in transmission loss of the experimental system, which was more than 10 dB in this frequency range. The maximum attenuation factor in transmission loss was about 60 dB at a frequency of 91 kHz.
{"title":"Basic Studies of Electrically Controlled Elasticity of Lead Zirconate Titanate (PZT) Ceramic and its Application to Intercepting Elastic Waves","authors":"J. Takarada, K. Tahara, H. Ueda, K. Imoto, M. Date, E. Fukada, K. Yamamoto, Y. Tajitsu","doi":"10.1109/ISAF.2007.4393343","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393343","url":null,"abstract":"We studied a novel technique for controlling the elastic coefficient of a piezoelectric lead zirconate titanate (PZT) ceramic by connecting a negative-capacitance circuit that behaves as a \"negative capacitor\". Thus, we can realize control through a mechanism in which PZT is softened and hardened. On the basis of this technology, we developed a simple experimental system for intercepting elastic waves in the frequency range from 8 kHz to 110 kHz. We determined the attenuation factor in transmission loss of the experimental system, which was more than 10 dB in this frequency range. The maximum attenuation factor in transmission loss was about 60 dB at a frequency of 91 kHz.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121234181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393305
K. Kato, K. Suzuki, S. Kayukawa, K. Tanaka, Yiping Guo
BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.
{"title":"Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)","authors":"K. Kato, K. Suzuki, S. Kayukawa, K. Tanaka, Yiping Guo","doi":"10.1109/ISAF.2007.4393305","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393305","url":null,"abstract":"BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"323 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121250777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393210
T. Nishida, M. Echizen, B. Gun, T. Kono, T. Tsuchikawa, K. Uchiyama, T. Shiosaki
Recently, information and communication technologies have been developing rapidly. Dielectric materials for microwave and milliwave devices have been widely investigated. In particular, (Ba, Sr)TiO3 (BST) is expected to be utilized for these devices since BST has high permittivity at high frequencies and nonlinear properties. We have developed a preparation method for BST films and have applied the films for frequency conversion devices, such as a frequency mixer and multiplier. However, the conversion efficiencies of the trial devices have been very low since their circuit designs were not optimized. In this paper, the nonlinear dielectric properties of BST films were analyzed numerically, and the experimental equation expressing the properties was investigated. Furthermore, an equivalent circuit for the BST nonlinear capacitor was proposed, and it was demonstrated that it was useful for the analysis of the frequency conversion circuit.
{"title":"Analysis of Frequency Conversion Devices Incorporating (Ba, Sr) TiO3 Nonlinear Dielectric Films","authors":"T. Nishida, M. Echizen, B. Gun, T. Kono, T. Tsuchikawa, K. Uchiyama, T. Shiosaki","doi":"10.1109/ISAF.2007.4393210","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393210","url":null,"abstract":"Recently, information and communication technologies have been developing rapidly. Dielectric materials for microwave and milliwave devices have been widely investigated. In particular, (Ba, Sr)TiO3 (BST) is expected to be utilized for these devices since BST has high permittivity at high frequencies and nonlinear properties. We have developed a preparation method for BST films and have applied the films for frequency conversion devices, such as a frequency mixer and multiplier. However, the conversion efficiencies of the trial devices have been very low since their circuit designs were not optimized. In this paper, the nonlinear dielectric properties of BST films were analyzed numerically, and the experimental equation expressing the properties was investigated. Furthermore, an equivalent circuit for the BST nonlinear capacitor was proposed, and it was demonstrated that it was useful for the analysis of the frequency conversion circuit.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133185576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393221
P. Yun, D.Y. Wang, Y. Wang, H. Chan
Ba(Zr0.35Ti0.65)O3 (BZT) thin film was deposited on (LaAlO3)O3(Sr2AlTaO6)0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr0.35Ti0.65)O3 thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr0.35Ti0.65)O3 thin film to be used in microwave devices.
{"title":"In-plane Dielectric Characterization of Epitaxial Ba(Zr0.35Ti0.65)O3 Thin Films Grown on LSAT (001)","authors":"P. Yun, D.Y. Wang, Y. Wang, H. Chan","doi":"10.1109/ISAF.2007.4393221","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393221","url":null,"abstract":"Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> (BZT) thin film was deposited on (LaAlO<sub>3</sub>)O<sub>3</sub>(Sr<sub>2</sub>AlTaO<sub>6</sub>)<sub>0.35</sub> [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> thin film to be used in microwave devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132127443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393309
X. Long, Z. Ye
A new solid solution of (1-x)Ba(Mg1/3Nb2/3)O3-xPbTiO3 [(1-x)BMN-xPT] has been synthesized in the form of ceramics by solid state reactions and characterized by means of X-ray diffraction, dielectric spectroscopy and ferroelectric measurements. A partial solid state phase diagram of the binary system is established. It exhibits a morphotropic phase boundary region in the composition range between x = 0.71 and 0.74. The dielectric permittivity of BMN has been greatly enhanced by the substitution of PT. The ceramics of 0.4BMN-0.6PT show typical relaxor ferroelectric behavior with a strong dispersion of the maximum of dielectric permittivity (ε') appearing around the temperature of Tm, which shifts towards higher temperatures with increasing frequency. The variation of Tm with frequency follows the Vogel-Fulcher relationship. A deviation from the Curie-Weiss law is observed above Tm. Instead, the variation of 1/ε' with temperature above Tm satisfies a Lorentz-type function. With further increase of the PT-content, the permittivity peaks become sharper and frequency-independent, indicating a ferroelectric phase transition, the temperature of which (Tc) increases with x. Thus, the transformation from a simple dielectric, to relaxor and to ferroelectric phase has been demonstrated in this solid solution system.
{"title":"A New Solid Solution of (1-x)Ba(Mg1/3Nb2/3)O3-xPbTiO3 with Dielectric, Relaxor and Ferroelectric Properties","authors":"X. Long, Z. Ye","doi":"10.1109/ISAF.2007.4393309","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393309","url":null,"abstract":"A new solid solution of (1-x)Ba(Mg1/3Nb2/3)O3-xPbTiO3 [(1-x)BMN-xPT] has been synthesized in the form of ceramics by solid state reactions and characterized by means of X-ray diffraction, dielectric spectroscopy and ferroelectric measurements. A partial solid state phase diagram of the binary system is established. It exhibits a morphotropic phase boundary region in the composition range between x = 0.71 and 0.74. The dielectric permittivity of BMN has been greatly enhanced by the substitution of PT. The ceramics of 0.4BMN-0.6PT show typical relaxor ferroelectric behavior with a strong dispersion of the maximum of dielectric permittivity (ε') appearing around the temperature of Tm, which shifts towards higher temperatures with increasing frequency. The variation of Tm with frequency follows the Vogel-Fulcher relationship. A deviation from the Curie-Weiss law is observed above Tm. Instead, the variation of 1/ε' with temperature above Tm satisfies a Lorentz-type function. With further increase of the PT-content, the permittivity peaks become sharper and frequency-independent, indicating a ferroelectric phase transition, the temperature of which (Tc) increases with x. Thus, the transformation from a simple dielectric, to relaxor and to ferroelectric phase has been demonstrated in this solid solution system.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132272813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393286
A. Iwata, W. Sakamoto, T. Yogo
In this study, we investigated the solid solution of BiFeO3-PbTiO3 (BF-PT) system to improve the structural stability of perovskite phase and to enhance of several properties by using a morphotropic phase boundary (MPB) composition. Perovskite BF-PT single phase thin films were successfully fabricated though the formation of solid solution with PbTiO3. Although the electrical resistivity of BF-PT thin films was not sufficiently high at around room temperature, the large ferroelectricity was observed at low temperatures. The 0.7BiFeO3-0.3PbTiO3 thin films exhibited the Pr value of 60 muC/cm2 at -190degC.
{"title":"Ferroelectric Properties of Chemically Synthesized Perovskite BiFeO3-PbTiO3 Thin Films","authors":"A. Iwata, W. Sakamoto, T. Yogo","doi":"10.1109/ISAF.2007.4393286","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393286","url":null,"abstract":"In this study, we investigated the solid solution of BiFeO<sub>3</sub>-PbTiO<sub>3</sub> (BF-PT) system to improve the structural stability of perovskite phase and to enhance of several properties by using a morphotropic phase boundary (MPB) composition. Perovskite BF-PT single phase thin films were successfully fabricated though the formation of solid solution with PbTiO<sub>3</sub>. Although the electrical resistivity of BF-PT thin films was not sufficiently high at around room temperature, the large ferroelectricity was observed at low temperatures. The 0.7BiFeO<sub>3</sub>-0.3PbTiO<sub>3</sub> thin films exhibited the P<sub>r</sub> value of 60 muC/cm<sup>2</sup> at -190degC.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134370350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393182
S. Oda, T. Saito, T. Wada, H. Adachi
We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 film was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.
{"title":"Preparation of Ferroelectric NaNbO3 Thin Films on MgO Substrate by Pulsed Laser Deposition","authors":"S. Oda, T. Saito, T. Wada, H. Adachi","doi":"10.1109/ISAF.2007.4393182","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393182","url":null,"abstract":"We have successfully fabricated good quality NaNbO<sub>3</sub> films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO<sub>3</sub> (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO<sub>3</sub> film was deposited. X-ray diffraction showed that the NaNbO<sub>3</sub> film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The <i>P-E</i> hysteresis loop of the NaNbO<sub>3</sub> film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO<sub>3</sub> films epitaxially grown on (100)SrTiO<sub>3</sub> substrate.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114856503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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