Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393162
R. Waser
A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.
{"title":"Non-Volatile Memory Concepts Based on Resistive Switching","authors":"R. Waser","doi":"10.1109/ISAF.2007.4393162","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393162","url":null,"abstract":"A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125076360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393174
Jian Lu, Yi Zhang, T. Ikehara, Takashi Mihara, R. Maeda
This paper investigated the effects of rapid thermal annealing (RTA) on nucleation and growth behavior of sol-gel derived lead zirconate titanate (PZT) films. The effects of RTA on films' surface morphology, residual stress and orientation were also studied. It was found that residual stress of the film can be effectively reduced by extending the RTA time. High heating-rate was preferred for uniform PZT film nucleation and grain-growth, which resulted in dense microstructures and smooth film surface. Low heating-rate lead to strong PZT (100) orientation and low residual stress, but at the risk of film-crack caused by arbitrarily distributed large crystallites of about 300 nm in diameter among those with diameter of ~30 nm.
{"title":"Effects of Rapid Thermal Annealing on Nucleation and Growth Behavior of Lead Zirconate Titanate Films","authors":"Jian Lu, Yi Zhang, T. Ikehara, Takashi Mihara, R. Maeda","doi":"10.1109/ISAF.2007.4393174","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393174","url":null,"abstract":"This paper investigated the effects of rapid thermal annealing (RTA) on nucleation and growth behavior of sol-gel derived lead zirconate titanate (PZT) films. The effects of RTA on films' surface morphology, residual stress and orientation were also studied. It was found that residual stress of the film can be effectively reduced by extending the RTA time. High heating-rate was preferred for uniform PZT film nucleation and grain-growth, which resulted in dense microstructures and smooth film surface. Low heating-rate lead to strong PZT (100) orientation and low residual stress, but at the risk of film-crack caused by arbitrarily distributed large crystallites of about 300 nm in diameter among those with diameter of ~30 nm.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128265352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393261
G. Suchaneck, V. S. Vidyarthi, G. Milde, G. Gerlach, A. Solnyshkin, I. Kislova, T. Otto, R. Reichenbach, H. Klumbies, O. Mieth, L. Eng
In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.
{"title":"Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains","authors":"G. Suchaneck, V. S. Vidyarthi, G. Milde, G. Gerlach, A. Solnyshkin, I. Kislova, T. Otto, R. Reichenbach, H. Klumbies, O. Mieth, L. Eng","doi":"10.1109/ISAF.2007.4393261","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393261","url":null,"abstract":"In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130164047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393153
K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto
Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.
{"title":"Key process technology for high density 64M FeRAM and beyond","authors":"K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto","doi":"10.1109/ISAF.2007.4393153","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393153","url":null,"abstract":"Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130771648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393234
J. F. Webb
Perturbation analysis in which the time variation of an electric field is treated as inducing a weakly nonlinear response that is expressed as a Taylor series expansion is a standard technique for deriving the nonlinear susceptibility coefficients that relate the electric field to the polarization. In this paper a generalized method is used to generate the coefficients and Fourier analysis is employed in order to treat any time dependent electric field as a superposition of single frequency waves. It is then shown how this method can be applied to the calculation of nonlinear susceptibility coefficients in bulk ferroelectric materials in such a way that preserves the tensorial nature of the coefficients, appropriate for crystalline materials. An advantage of this general approach is that it is useful for the development of computer modelling packages involving nonlinear calculations.
{"title":"A General Approach to Perturbation Theoretic Calculations of Nonlinear Susceptibility Coefficient Tensors for Ferroelectric Materials","authors":"J. F. Webb","doi":"10.1109/ISAF.2007.4393234","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393234","url":null,"abstract":"Perturbation analysis in which the time variation of an electric field is treated as inducing a weakly nonlinear response that is expressed as a Taylor series expansion is a standard technique for deriving the nonlinear susceptibility coefficients that relate the electric field to the polarization. In this paper a generalized method is used to generate the coefficients and Fourier analysis is employed in order to treat any time dependent electric field as a superposition of single frequency waves. It is then shown how this method can be applied to the calculation of nonlinear susceptibility coefficients in bulk ferroelectric materials in such a way that preserves the tensorial nature of the coefficients, appropriate for crystalline materials. An advantage of this general approach is that it is useful for the development of computer modelling packages involving nonlinear calculations.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132891671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393379
Jaehyuk Park, Youngkyu Park, J. Akedo
High speed metal-based optical scanning devices were successfully fabricated in combination with piezoelectric thick films directly deposited by the aerosol deposition method (ADM) and specially designed stainless steel frame. A large optical scanning angle (41deg) was achieved at a high resonance frequency (28.24 kHz) in ambient air without vacuum packaging. The well-polished metal-based mirror has good flatness of less than 105 nm, which is lower than omega4. Sepcially, we carried out in the range from -20'C to 80'C at environmental chamber to investigate temperature properties of metal-based optical scanner. The scanning angle is linearly increased with increase of temperature, while the resonant frequency is linearly decreased as temperature increased. Also, we compared with performance of metal-based optical scanner driven by bulk PZT and AD-PZT thick films.
{"title":"Temperature Properties of PZT Actuated High-Speed Metal-Based Optical Resonant Scanners","authors":"Jaehyuk Park, Youngkyu Park, J. Akedo","doi":"10.1109/ISAF.2007.4393379","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393379","url":null,"abstract":"High speed metal-based optical scanning devices were successfully fabricated in combination with piezoelectric thick films directly deposited by the aerosol deposition method (ADM) and specially designed stainless steel frame. A large optical scanning angle (41deg) was achieved at a high resonance frequency (28.24 kHz) in ambient air without vacuum packaging. The well-polished metal-based mirror has good flatness of less than 105 nm, which is lower than omega4. Sepcially, we carried out in the range from -20'C to 80'C at environmental chamber to investigate temperature properties of metal-based optical scanner. The scanning angle is linearly increased with increase of temperature, while the resonant frequency is linearly decreased as temperature increased. Also, we compared with performance of metal-based optical scanner driven by bulk PZT and AD-PZT thick films.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125355811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393376
S. Tiedke, K. Prume, T. Schmitz-Kempen
The electrical and electromechanical properties of piezoelectric thin films were measured using different measurement procedures including a new method which combines the measurement of both the effective longitudinal and transverse piezoelectric coefficients on the same sample under precisely defined homogeneous mechanical strain utilizing a 4-point bending setup. Stress and corresponding strain distributions in the film were verified by finite element simulations.
{"title":"Electrical and electromechanical characterization of piezoelectric thin films in view of MEMS application","authors":"S. Tiedke, K. Prume, T. Schmitz-Kempen","doi":"10.1109/ISAF.2007.4393376","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393376","url":null,"abstract":"The electrical and electromechanical properties of piezoelectric thin films were measured using different measurement procedures including a new method which combines the measurement of both the effective longitudinal and transverse piezoelectric coefficients on the same sample under precisely defined homogeneous mechanical strain utilizing a 4-point bending setup. Stress and corresponding strain distributions in the film were verified by finite element simulations.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393390
T. Omori, K. Chida, A. Yuki, K. Hashimoto, M. Yamaguchi
The preparation of piezoelectric AIN thin films of high quality onto diamond substrates using DC-TFTS method and its application to SHF SAW devices are discussed. FWHM (=3.4deg) of the rocking curve of XRD suggested that the c-axes of AIN films may well align perpendicular to the film surface. Transversal filters based on Sezawa wave were fabricated to verify whether the prepared AIN/diamond structure can be applied to low loss SAW devices in an SHF range. The propagation loss was experimentally estimated to be 0.08 dB/lambda at the centre frequency of 6.12 GHz. Further reduction in the propagation loss was attempted by using small-grain-diamond substrates.
{"title":"Deposition of piezoelectric AlN thin film on diamond substrate for SHF SAW devices","authors":"T. Omori, K. Chida, A. Yuki, K. Hashimoto, M. Yamaguchi","doi":"10.1109/ISAF.2007.4393390","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393390","url":null,"abstract":"The preparation of piezoelectric AIN thin films of high quality onto diamond substrates using DC-TFTS method and its application to SHF SAW devices are discussed. FWHM (=3.4deg) of the rocking curve of XRD suggested that the c-axes of AIN films may well align perpendicular to the film surface. Transversal filters based on Sezawa wave were fabricated to verify whether the prepared AIN/diamond structure can be applied to low loss SAW devices in an SHF range. The propagation loss was experimentally estimated to be 0.08 dB/lambda at the centre frequency of 6.12 GHz. Further reduction in the propagation loss was attempted by using small-grain-diamond substrates.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123343142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393250
Y. Genenko, D. Lupascu
Two-dimensional model of point defect migration in ferroelectrics is advanced. Charge defect drift-diffusion in local depolarization fields is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect transport and electrostatic field relaxation in a 2D domain configuration. Peak values of the clamping pressure at domain walls due to space charge formation are in the range of 1divide10 MPa and the consequent coercive field is in the range of 1 kV/mm in agreement with observed coercive stresses and fields in bulk perovskite ferroelectrics.
{"title":"Drift of charged defects in local fields as a mechanism of degradation in ferroelectrics","authors":"Y. Genenko, D. Lupascu","doi":"10.1109/ISAF.2007.4393250","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393250","url":null,"abstract":"Two-dimensional model of point defect migration in ferroelectrics is advanced. Charge defect drift-diffusion in local depolarization fields is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect transport and electrostatic field relaxation in a 2D domain configuration. Peak values of the clamping pressure at domain walls due to space charge formation are in the range of 1divide10 MPa and the consequent coercive field is in the range of 1 kV/mm in agreement with observed coercive stresses and fields in bulk perovskite ferroelectrics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122298554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393215
Se-Woong Oh, Jaehyuk Park, J. Akedo
Polycrystalline barium strontium titanate (BaxSr1-xTiO3, BST) films were directly prepared on copper substrate using aerosol deposition method (ADM) at room-temperature. We investigated the relationships between their properties such as dielectric constant and tunability, and Ba content in BaxSr1-xTiO3 (x=1.0, 0.6, 0.4) films. At the frequency of 100 kHz, the dielectric constant of the as-deposited BST film were 100, 201, and 72 at x = 1.0, 0.6, 0.4, respectively. After annealing in N2 gas ambient at 600degC for 10 min, the dielectric constant and dielectric loss of BST (x=0.6) film were 380 and 2.0 x 10-3 at 100 kHz, respectively. Moreover, BST (x=0.6) film even showed a high tunability of 30 % at an applied electric field of 300 kV cm-1.
{"title":"Dielectric Characterization of Barium strontium titanate (BST) Films Prepared on Cu Substrate By Aerosol Deposited Method","authors":"Se-Woong Oh, Jaehyuk Park, J. Akedo","doi":"10.1109/ISAF.2007.4393215","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393215","url":null,"abstract":"Polycrystalline barium strontium titanate (Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub>, BST) films were directly prepared on copper substrate using aerosol deposition method (ADM) at room-temperature. We investigated the relationships between their properties such as dielectric constant and tunability, and Ba content in Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub> (x=1.0, 0.6, 0.4) films. At the frequency of 100 kHz, the dielectric constant of the as-deposited BST film were 100, 201, and 72 at x = 1.0, 0.6, 0.4, respectively. After annealing in N<sub>2</sub> gas ambient at 600degC for 10 min, the dielectric constant and dielectric loss of BST (x=0.6) film were 380 and 2.0 x 10<sup>-3</sup> at 100 kHz, respectively. Moreover, BST (x=0.6) film even showed a high tunability of 30 % at an applied electric field of 300 kV cm<sup>-1</sup>.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114174832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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