Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393152
Y. Nagano, E. Fujii
System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.
{"title":"System LSI Embedded Ferroelectric Memory Technology","authors":"Y. Nagano, E. Fujii","doi":"10.1109/ISAF.2007.4393152","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393152","url":null,"abstract":"System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125248595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393363
J. Zylberberg, A. Belik, E. Takayama-Muromachi, Z. Ye
Ferroelectric materials have applications in non-volatile random access memory devices and micro electromechanical systems. For such applications, the materials must remain ferroelectric up to high temperatures. The best materials that currently exist for these applications are lead-containing compounds like Pb(Zr1-xTix)O3. Owing to the toxicity of lead, there is a demand for lead-free high-temperature ferroelectrics. Bismuth aluminate has been predicted to be one such material [1]. In this work, BiA1O3 is synthesized using a high-pressure high-temperature technique at 6 GPa and 1000degC. The diffraction experiments show that BiAlO3 crystallizes in a rhombohedral unit cell that is elongated along the c-axis (R3c; Z = 6; a = 5.37546(5) A and c = 13.3933(1) A). The characterization of the dielectric, ferroelectric, and piezoelectric properties of the ceramic BiAlO3 demonstrate that it is indeed a lead-free ferroelectric with a Curie temperature Tc > 520degC, a piezoelectric coefficient d33 = 28 pC/N and a room-temperature remnant polarization Pr = 9.5 muC/cm2. Pr increases with temperature, reaching 26.7 muC/cm2 at 225degC. The dielectric, ferroelectric and piezoelectric properties of BiAlO3 are comparable to those of BiFeO3 (BFO) and SrBi2Ta2O9 (SBT), making it a promising new high-Tc lead-free piezo-and ferroelectric for memory and transducer applications.
{"title":"Bismuth Aluminate BiAlO3: A New Lead-free High-TC Piezo-/ferroelectric","authors":"J. Zylberberg, A. Belik, E. Takayama-Muromachi, Z. Ye","doi":"10.1109/ISAF.2007.4393363","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393363","url":null,"abstract":"Ferroelectric materials have applications in non-volatile random access memory devices and micro electromechanical systems. For such applications, the materials must remain ferroelectric up to high temperatures. The best materials that currently exist for these applications are lead-containing compounds like Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub>. Owing to the toxicity of lead, there is a demand for lead-free high-temperature ferroelectrics. Bismuth aluminate has been predicted to be one such material [1]. In this work, BiA1O<sub>3</sub> is synthesized using a high-pressure high-temperature technique at 6 GPa and 1000degC. The diffraction experiments show that BiAlO<sub>3</sub> crystallizes in a rhombohedral unit cell that is elongated along the c-axis (R3c; Z = 6; a = 5.37546(5) A and c = 13.3933(1) A). The characterization of the dielectric, ferroelectric, and piezoelectric properties of the ceramic BiAlO<sub>3</sub> demonstrate that it is indeed a lead-free ferroelectric with a Curie temperature Tc > 520degC, a piezoelectric coefficient d33 = 28 pC/N and a room-temperature remnant polarization P<sub>r</sub> = 9.5 muC/cm<sup>2</sup>. P<sub>r</sub> increases with temperature, reaching 26.7 muC/cm<sup>2</sup> at 225degC. The dielectric, ferroelectric and piezoelectric properties of BiAlO<sub>3</sub> are comparable to those of BiFeO<sub>3</sub> (BFO) and SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT), making it a promising new high-Tc lead-free piezo-and ferroelectric for memory and transducer applications.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129086651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393256
Hee Han, Y. Park, Kilho Lee, S. Baik
Evolution of complex ferroelastic domain structures of PbTiO3 nano-islands grown epitaxially on Pt(001)/MgO(001) single crystal substrate by chemical solution deposition has been investigated by two-dimensional reciprocal space mapping technique using synchrotron X-ray diffraction. With decreasing lateral size and thickness of the nano-islands, the proportion of c-domains increased continuously and fully c-domain dominant structure was emerged. At the same time, some of a-domains in the twinned a/c/a/c type structure turned into the a-domains with defective domain boundaries aligned normal to the substrate plane. The relative proportions of two types of a-domains were also dependent on the lateral size of nano-islands. The smaller islands favored the aligned a-domains with defective domain boundaries, which seem to be due to extensive relaxation of confining strain imposed by the substrate.
{"title":"Domain Structure in Ferroelectric PbTiO3 Nano-islands","authors":"Hee Han, Y. Park, Kilho Lee, S. Baik","doi":"10.1109/ISAF.2007.4393256","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393256","url":null,"abstract":"Evolution of complex ferroelastic domain structures of PbTiO3 nano-islands grown epitaxially on Pt(001)/MgO(001) single crystal substrate by chemical solution deposition has been investigated by two-dimensional reciprocal space mapping technique using synchrotron X-ray diffraction. With decreasing lateral size and thickness of the nano-islands, the proportion of c-domains increased continuously and fully c-domain dominant structure was emerged. At the same time, some of a-domains in the twinned a/c/a/c type structure turned into the a-domains with defective domain boundaries aligned normal to the substrate plane. The relative proportions of two types of a-domains were also dependent on the lateral size of nano-islands. The smaller islands favored the aligned a-domains with defective domain boundaries, which seem to be due to extensive relaxation of confining strain imposed by the substrate.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133454984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393169
Ho-Seung Jeon, Jeong-Hwan Kim, Joonam Kim, Kwang-Hun Park, Byung-Eun Park
We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the plusmn5 V bias sweep. The leakage current density was as low as 1x10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated FeFETs showed typical n-channel FETs characteristics.
{"title":"Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)4Ti3O12/SrTa2O6/Si Structures","authors":"Ho-Seung Jeon, Jeong-Hwan Kim, Joonam Kim, Kwang-Hun Park, Byung-Eun Park","doi":"10.1109/ISAF.2007.4393169","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393169","url":null,"abstract":"We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the plusmn5 V bias sweep. The leakage current density was as low as 1x10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated FeFETs showed typical n-channel FETs characteristics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133421618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393190
M. Yamaguchi, A. Yamamoto, Y. Masuda
We fabricate the bismut titanate (Bi4Ti3O12) thin films used an alcohol related solutions which dissolved Bi(OtC5H11)3 and Ti[OCH(CH3)2]4 in C2H5OC2H4OH for micro liquid delivery systems such as ink-jet printing method. These films fired at 750 degree Celsius into pure oxygen including 1.2% ozone atmosphere, exhibits plate-like grains, and highly c-axis oriented. Furthermore, its films shows good ferroelectric properties, remanent polarization and coercive field was 2.6 muC/cm2 and 36 kV/cm, respectively, and shows fatigue properties up to 108 times. Additionally, we examined the pattern formation on Pt substrate with hydrophilic treatment by micro liquid delivery systems. Drawn patterns on hydrophilic treated substrate surface shows relatively flat cross sectional structures. Therefore, we think that the micro liquid delivery system and hydrophile treatment of substrate surface is effectively to the thin film formation.
采用酒精相关溶液将Bi(OtC5H11)3和Ti[OCH(CH3)2]4溶解于C2H5OC2H4OH中，制备钛酸铋(Bi4Ti3O12)薄膜，用于喷墨打印等微液体输送系统。这些薄膜在750摄氏度的纯氧(含1.2%的臭氧)气氛中烧制，呈现出片状晶粒，具有高度的c轴取向。薄膜具有良好的铁电性能，残余极化和矫顽力场分别为2.6 μ c /cm2和36 kV/cm，具有高达108倍的疲劳性能。此外，我们研究了微液体输送系统亲水处理后Pt衬底上的图案形成。在亲水性处理的基材表面绘制的图案显示出相对平坦的横截面结构。因此，我们认为微液体输送系统和基材表面的亲水性处理是有效的薄膜形成。
{"title":"Fabrication of Bi4Ti3O12 Thin Films Using Alcohol Related Solutions by Micro Liquid Delivery Systems","authors":"M. Yamaguchi, A. Yamamoto, Y. Masuda","doi":"10.1109/ISAF.2007.4393190","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393190","url":null,"abstract":"We fabricate the bismut titanate (Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>) thin films used an alcohol related solutions which dissolved Bi(OtC<sub>5</sub>H<sub>11</sub>)<sub>3</sub> and Ti[OCH(CH<sub>3</sub>)<sub>2</sub>]<sub>4</sub> in C<sub>2</sub>H<sub>5</sub>OC<sub>2</sub>H<sub>4</sub>OH for micro liquid delivery systems such as ink-jet printing method. These films fired at 750 degree Celsius into pure oxygen including 1.2% ozone atmosphere, exhibits plate-like grains, and highly c-axis oriented. Furthermore, its films shows good ferroelectric properties, remanent polarization and coercive field was 2.6 muC/cm<sup>2</sup> and 36 kV/cm, respectively, and shows fatigue properties up to 108 times. Additionally, we examined the pattern formation on Pt substrate with hydrophilic treatment by micro liquid delivery systems. Drawn patterns on hydrophilic treated substrate surface shows relatively flat cross sectional structures. Therefore, we think that the micro liquid delivery system and hydrophile treatment of substrate surface is effectively to the thin film formation.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133392541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393178
Kwang-Pyo Kim, Choon-ho Lee
Lead magnesium niobate Pb(Mg1/3Nb2/3)O3 (abbreviated PMN) films is well known as a relaxor-based ferroelectric materials, which have attracted considerable attention for their applications including ferroelectric nonvolatile memory, capacitors, piezoelectric and pyroelectric devices due to polarization switching, high dielectric constant, excellent piezoelectric and pyroelectric properties. However, the use of this material is not realized, because it is difficult to prepare the perovskite single phase PMN films without pyrochlore phase. The presence of the pyrochlore phase in the films, even in small quantities, decreases the dielectric constant and ferroelectric or piezoelectric performance of the films. It is well known that Ba substitution to Pb site of PMN promotes the perovskite phase stabilization. So we have deposited [BaxPb(1-x)(Mg1/3Nb2/3)O3] films by MOCVD using ultrasonic nebulization and effects of Ba substitution quantity on the structural and electrical Properties of the films were investigated and we could obtained [BaxPb(1-x)(Mg1/3Nb2/3)O3] films with only perovskite structure and they have excellent crystallographic and ferroelectric properties.
{"title":"Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization","authors":"Kwang-Pyo Kim, Choon-ho Lee","doi":"10.1109/ISAF.2007.4393178","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393178","url":null,"abstract":"Lead magnesium niobate Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (abbreviated PMN) films is well known as a relaxor-based ferroelectric materials, which have attracted considerable attention for their applications including ferroelectric nonvolatile memory, capacitors, piezoelectric and pyroelectric devices due to polarization switching, high dielectric constant, excellent piezoelectric and pyroelectric properties. However, the use of this material is not realized, because it is difficult to prepare the perovskite single phase PMN films without pyrochlore phase. The presence of the pyrochlore phase in the films, even in small quantities, decreases the dielectric constant and ferroelectric or piezoelectric performance of the films. It is well known that Ba substitution to Pb site of PMN promotes the perovskite phase stabilization. So we have deposited [Ba<sub>x</sub>Pb(<sub>1-x</sub>)(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>] films by MOCVD using ultrasonic nebulization and effects of Ba substitution quantity on the structural and electrical Properties of the films were investigated and we could obtained [Ba<sub>x</sub>Pb(<sub>1-x</sub>)(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>] films with only perovskite structure and they have excellent crystallographic and ferroelectric properties.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132625003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393274
Jinrong Cheng, Jianguo Chen, D. Jin, Shengwen Yu, Z. Meng
Solid solutions of La and Ba modified (1-x)BiFeO3-xPbTiO3 were prepared by the mixed oxides method. The 10 at% of La3+ and Ba2+ substituents were utilized to substitute Bi3+ and Pb2+ ions respectively. These cations enter into the crystalline lattice to modify the structure and properties of BiFeO3-PbTiO3. The morphotropic phase boundary of (1-x)(Bi,La)FeO3-x(Pb,Ba)TiO3 (BLF-PBT) appears at x=0.4 accompanying by the rhombohedral-tetragonal phase transition. It is found that (1-x)BLF-xPBT reveals enhanced ferroelectric and magnetic properties in the vicinity of the MPB. The remnant polarization and magnetization achieve of 26 muC/cm and 0.06 emu/g, respectively. Our results indicated that (1-x)Bi(Fe,Ga)O3-xPbTiO3 is of the insulating and switchable multiferroics.
采用混合氧化物法制备了La和Ba改性(1-x)BiFeO3-xPbTiO3的固溶体。用10%的La3+和Ba2+取代离子分别取代Bi3+和Pb2+离子。这些阳离子进入晶格，改变了BiFeO3-PbTiO3的结构和性能。在x=0.4处出现(1-x)(Bi,La)FeO3-x(Pb,Ba)TiO3 (BLF-PBT)的亲晶相界，并伴有菱形-四方相转变。发现(1-x)BLF-xPBT在MPB附近表现出增强的铁电和磁性能。残余极化和磁化强度分别达到26 μ c /cm和0.06 μ u/g。结果表明，(1-x)Bi(Fe,Ga)O3-xPbTiO3是一种绝缘可切换的多铁质材料。
{"title":"Multiferroic Properties of La, Ba Co-Modified BiFeO3-PbTiO3 Crystalline Solutions","authors":"Jinrong Cheng, Jianguo Chen, D. Jin, Shengwen Yu, Z. Meng","doi":"10.1109/ISAF.2007.4393274","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393274","url":null,"abstract":"Solid solutions of La and Ba modified (1-x)BiFeO<sub>3</sub>-xPbTiO<sub>3</sub> were prepared by the mixed oxides method. The 10 at% of La<sup>3+</sup> and Ba<sup>2+</sup> substituents were utilized to substitute Bi<sup>3+</sup> and Pb<sup>2+</sup> ions respectively. These cations enter into the crystalline lattice to modify the structure and properties of BiFeO<sub>3</sub>-PbTiO<sub>3</sub>. The morphotropic phase boundary of (1-x)(Bi,La)FeO<sub>3</sub>-x(Pb,Ba)TiO<sub>3</sub> (BLF-PBT) appears at x=0.4 accompanying by the rhombohedral-tetragonal phase transition. It is found that (1-x)BLF-xPBT reveals enhanced ferroelectric and magnetic properties in the vicinity of the MPB. The remnant polarization and magnetization achieve of 26 muC/cm and 0.06 emu/g, respectively. Our results indicated that (1-x)Bi(Fe,Ga)O<sub>3</sub>-xPbTiO<sub>3</sub> is of the insulating and switchable multiferroics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116910214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393399
W. Yoon, B. Hahn, J. Ryu, J. Choi, D. Park, H.O. Choi
Tube-type piezoelectric motor having a volume of 2times2times10 mm3 was fabricated by aerosol deposition of PZT powder on the square-shaped titanium alloy tube. With applying two channels driving voltage the stator generates two orthogonal bending vibration modes which makes wobbling motion of the stator at the resonance frequency. At the frequency of 76.4 kHz with 60 Vpp, rotation speed of the stator was about 1900 rpm and the speed of the stator was increased linearly with applying voltage.
{"title":"Characteristics of tube-type piezoelectric motor fabricated by aerosol deposition","authors":"W. Yoon, B. Hahn, J. Ryu, J. Choi, D. Park, H.O. Choi","doi":"10.1109/ISAF.2007.4393399","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393399","url":null,"abstract":"Tube-type piezoelectric motor having a volume of 2times2times10 mm3 was fabricated by aerosol deposition of PZT powder on the square-shaped titanium alloy tube. With applying two channels driving voltage the stator generates two orthogonal bending vibration modes which makes wobbling motion of the stator at the resonance frequency. At the frequency of 76.4 kHz with 60 Vpp, rotation speed of the stator was about 1900 rpm and the speed of the stator was increased linearly with applying voltage.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115488883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393160
M. Miyake, J. Scott, X. Lou, F. Morrison, S. Motoyama, T. Tatsuta, O. Tsuji
Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.
采用Samco MD-6060型液源雾化沉积(LSMCD)技术，在SiO2/Si衬底上制备了Pb(Zr,Ti)O3 (PZT)薄膜和纳米管。我们报道了透明铁电薄膜和纳米管的沉积和表征。在室温条件下沉积并在700℃下退火的PZT薄膜表现出良好的铁电性能，剩余极化约为15 μ c /cm2。侧壁的台阶覆盖率为59%，底壁覆盖率为79%。
{"title":"Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes","authors":"M. Miyake, J. Scott, X. Lou, F. Morrison, S. Motoyama, T. Tatsuta, O. Tsuji","doi":"10.1109/ISAF.2007.4393160","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393160","url":null,"abstract":"Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117109315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393182
S. Oda, T. Saito, T. Wada, H. Adachi
We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 film was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.
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