Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393160
M. Miyake, J. Scott, X. Lou, F. Morrison, S. Motoyama, T. Tatsuta, O. Tsuji
Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.
采用Samco MD-6060型液源雾化沉积(LSMCD)技术，在SiO2/Si衬底上制备了Pb(Zr,Ti)O3 (PZT)薄膜和纳米管。我们报道了透明铁电薄膜和纳米管的沉积和表征。在室温条件下沉积并在700℃下退火的PZT薄膜表现出良好的铁电性能，剩余极化约为15 μ c /cm2。侧壁的台阶覆盖率为59%，底壁覆盖率为79%。
{"title":"Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes","authors":"M. Miyake, J. Scott, X. Lou, F. Morrison, S. Motoyama, T. Tatsuta, O. Tsuji","doi":"10.1109/ISAF.2007.4393160","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393160","url":null,"abstract":"Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117109315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393399
W. Yoon, B. Hahn, J. Ryu, J. Choi, D. Park, H.O. Choi
Tube-type piezoelectric motor having a volume of 2times2times10 mm3 was fabricated by aerosol deposition of PZT powder on the square-shaped titanium alloy tube. With applying two channels driving voltage the stator generates two orthogonal bending vibration modes which makes wobbling motion of the stator at the resonance frequency. At the frequency of 76.4 kHz with 60 Vpp, rotation speed of the stator was about 1900 rpm and the speed of the stator was increased linearly with applying voltage.
{"title":"Characteristics of tube-type piezoelectric motor fabricated by aerosol deposition","authors":"W. Yoon, B. Hahn, J. Ryu, J. Choi, D. Park, H.O. Choi","doi":"10.1109/ISAF.2007.4393399","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393399","url":null,"abstract":"Tube-type piezoelectric motor having a volume of 2times2times10 mm3 was fabricated by aerosol deposition of PZT powder on the square-shaped titanium alloy tube. With applying two channels driving voltage the stator generates two orthogonal bending vibration modes which makes wobbling motion of the stator at the resonance frequency. At the frequency of 76.4 kHz with 60 Vpp, rotation speed of the stator was about 1900 rpm and the speed of the stator was increased linearly with applying voltage.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115488883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393213
M. Spreitzer, J. Konig, B. Jaňcar, D. Suvorov
We have investigated the dielectric tunability of the Na0.5Bi0.5TiO3 relaxor ferroelectric, modified with additions of Li3xLa(2/3)-xTiO3 (0.03lesxges0.167) and NaTaO3. These two additives have characteristics similar to incipient antiferroelectric and ferroelectric materials, respectively. The phase relations in the Na0.5Bi0.5TiO3-Li3xLa(2/3)-xTiO3 system were determined; however, this was made difficult by the slow kinetics and the thermodynamic instability of the compounds from the system. With an additives concentration of close to 10 mol% the material shows a relative dielectric tunability of up to 50%, moderate dielectric losses and a reduced temperature dependence of the dielectric constant, indicating that relaxor ferroelectrics might be promising materials for tunable applications.
{"title":"Na0.5Bi0.5TiO3-Based Voltage-Tunable Materials","authors":"M. Spreitzer, J. Konig, B. Jaňcar, D. Suvorov","doi":"10.1109/ISAF.2007.4393213","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393213","url":null,"abstract":"We have investigated the dielectric tunability of the Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub> relaxor ferroelectric, modified with additions of Li<sub>3x</sub>La<sub>(2/3)-x</sub>TiO<sub>3</sub> (0.03lesxges0.167) and NaTaO<sub>3</sub>. These two additives have characteristics similar to incipient antiferroelectric and ferroelectric materials, respectively. The phase relations in the Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-Li<sub>3x</sub>La<sub>(2/3)-x</sub>TiO<sub>3</sub> system were determined; however, this was made difficult by the slow kinetics and the thermodynamic instability of the compounds from the system. With an additives concentration of close to 10 mol% the material shows a relative dielectric tunability of up to 50%, moderate dielectric losses and a reduced temperature dependence of the dielectric constant, indicating that relaxor ferroelectrics might be promising materials for tunable applications.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"299 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121730808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393222
T. Yamamoto
Dr. Okino's contributions for piezoelectric application field will be introduced. First of all, by using piezoresponse force microscopy (PFM) and contact-resonance piezoresponse microscopy (CR-PFM), domain structures and domain-related properties of typical piezoelectric single crystal, for example PbTiO3, Pb(Mg1/3Nb2/3)O3 -PbTiO3 single crystals, were successfully observed. Four kinds of domain structures (180 c-c, 180 a-a, 90 a-a and 90 a-c domains) on grown surfaces of PbTiO3 single crystals were imaged successfully using vertical and lateral piezoresponse force microscopy (PFM). Next, the domain-structure images of (001) plates of Pb(Mg1/3Nb2/3)O3 -PbTiO3 (PMN-PT) single crystals were successfully observed in a vacuum using a contact-resonance piezoresponse force microscopy. The domain structures of (001) plates of (l-x) Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) single crystals were obtained at room temperature after 240 thermal treatment at various cooling rates. PMN -32 % PT and PMN- 34 %PT single crystals undergoes a relaxor-ferroelectric phase transition from Tetragonal phase to the Cubic phase.
{"title":"Memorial Lecture for Dr. H. Okino","authors":"T. Yamamoto","doi":"10.1109/ISAF.2007.4393222","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393222","url":null,"abstract":"Dr. Okino's contributions for piezoelectric application field will be introduced. First of all, by using piezoresponse force microscopy (PFM) and contact-resonance piezoresponse microscopy (CR-PFM), domain structures and domain-related properties of typical piezoelectric single crystal, for example PbTiO<sub>3</sub>, Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> -PbTiO<sub>3</sub> single crystals, were successfully observed. Four kinds of domain structures (180 c-c, 180 a-a, 90 a-a and 90 a-c domains) on grown surfaces of PbTiO<sub>3</sub> single crystals were imaged successfully using vertical and lateral piezoresponse force microscopy (PFM). Next, the domain-structure images of (001) plates of Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> -PbTiO<sub>3</sub> (PMN-PT) single crystals were successfully observed in a vacuum using a contact-resonance piezoresponse force microscopy. The domain structures of (001) plates of (l-x) Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3-x</sub>PbTiO<sub>3</sub> (PMN-PT) single crystals were obtained at room temperature after 240 thermal treatment at various cooling rates. PMN -32 % PT and PMN- 34 %PT single crystals undergoes a relaxor-ferroelectric phase transition from Tetragonal phase to the Cubic phase.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122738242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393266
S. Wada, K. Yokoh, T. Muraishi, T. Hoshina, H. Kakemoto, T. Tsurumi, C. Moriyoshi, Y. Kuroiwa
Silver lithium niobate (Ag1-xLixNbO3 ALN) single crystals with Li contents of 10 and 12.5 mol% were successfully grown by a slow cooling method. The high-energy X-ray diffraction measurement revealed that the crystal structures of both ALN10 and ALN12.5 were assigned to the coexistence between orthorhombic Pc21b and rhombohedral R3m phases. Their piezoelectric properties were investigated as a function of crystallographic direction and Li content.
{"title":"Domain Engineering of Silver Lithium Niobate Single Crystals and Their Piezoelectric Properties","authors":"S. Wada, K. Yokoh, T. Muraishi, T. Hoshina, H. Kakemoto, T. Tsurumi, C. Moriyoshi, Y. Kuroiwa","doi":"10.1109/ISAF.2007.4393266","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393266","url":null,"abstract":"Silver lithium niobate (Ag1-xLixNbO3 ALN) single crystals with Li contents of 10 and 12.5 mol% were successfully grown by a slow cooling method. The high-energy X-ray diffraction measurement revealed that the crystal structures of both ALN10 and ALN12.5 were assigned to the coexistence between orthorhombic Pc21b and rhombohedral R3m phases. Their piezoelectric properties were investigated as a function of crystallographic direction and Li content.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125438047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393413
H. Harinaka, Hideaki Takeda, Takashi Nishida, Kiyoshi Uchiyama, T. Shiosaki
As a candidate of a lead-free positive temperature coefficient of resistivitiy (PTC) themistor material, barium titanate (BaTiO3) -based solid-solution ceramics, BaTiO3-(Bi1/2K1/2)TiO3 (BBKT100x), have been synthesized by the conventional ceramic fabrication technique. The maximum temperature of the dielectric constant (Tm) of the BBKTIOOx ceramics monotonously increased with the increasing amount of x. The Tm values of the BBKTIOOx ceramics with x>0.0 were higher than that of BaTiO3 (=130degC). The peak temperature (Tp) of the pyroelectric coefficient showed that the ferroelectricity of the BBKT100x ceramics disappeared at Tm. The reduced BBKT5 ceramics show PTC characteristics as well as a semiconductivity.
{"title":"Fabrication and Characterization of Semiconductive Ceramics using BaTiO3-(Bi1/2K1/2)TiO3 System","authors":"H. Harinaka, Hideaki Takeda, Takashi Nishida, Kiyoshi Uchiyama, T. Shiosaki","doi":"10.1109/ISAF.2007.4393413","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393413","url":null,"abstract":"As a candidate of a lead-free positive temperature coefficient of resistivitiy (PTC) themistor material, barium titanate (BaTiO<sub>3</sub>) -based solid-solution ceramics, BaTiO<sub>3</sub>-(Bi<sub>1/2</sub>K<sub>1/2</sub>)TiO<sub>3</sub> (BBKT100x), have been synthesized by the conventional ceramic fabrication technique. The maximum temperature of the dielectric constant (T<sub>m</sub>) of the BBKTIOOx ceramics monotonously increased with the increasing amount of x. The Tm values of the BBKTIOOx ceramics with x>0.0 were higher than that of BaTiO<sub>3</sub> (=130degC). The peak temperature (T<sub>p</sub>) of the pyroelectric coefficient showed that the ferroelectricity of the BBKT100x ceramics disappeared at Tm. The reduced BBKT5 ceramics show PTC characteristics as well as a semiconductivity.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126337173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393373
Y. Sung, J. Cho, T. Song, S. Jeong, J. Song, M. Kim
An optimum composition for maximizing piezoelectric properties of (Bi0.5Na0.5)(1-x)BaxTiO3 ceramics was investigated within the range of x=0-0.1 covering rhombohedral to tetragonal phase regions of the system. A perovskite structure with two different crystal symmetries depending on the Ba content was formed with no impurity phases. A range of morphotropic phase boundary dividing rhombohedral and tetragonal phase regions was found to exist at x=0.05~0.08. As for piezoelectric properties the piezoelectric constant (d33) and the electromechanical coupling factor (Kp) showed a peak value at x=0.065 within the range tested, which was 192 pC/N and 34%, respectively, implying x=0.065 as an optimum composition for piezoelectric (Bi0.5Na0.5)(1-x)BaxTiO3 ceramics.
{"title":"Composition Dependent Piezoelectric Properties of Pb-free (Bi0.o5N0o 5)1-x) BaxTiO3 Ceramics","authors":"Y. Sung, J. Cho, T. Song, S. Jeong, J. Song, M. Kim","doi":"10.1109/ISAF.2007.4393373","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393373","url":null,"abstract":"An optimum composition for maximizing piezoelectric properties of (Bi<sub>0.5</sub>Na<sub>0.5</sub>)<sub>(1-x)</sub>Ba<sub>x</sub>TiO<sub>3</sub> ceramics was investigated within the range of x=0-0.1 covering rhombohedral to tetragonal phase regions of the system. A perovskite structure with two different crystal symmetries depending on the Ba content was formed with no impurity phases. A range of morphotropic phase boundary dividing rhombohedral and tetragonal phase regions was found to exist at x=0.05~0.08. As for piezoelectric properties the piezoelectric constant (d<sub>33</sub>) and the electromechanical coupling factor (K<sub>p</sub>) showed a peak value at x=0.065 within the range tested, which was 192 pC/N and 34%, respectively, implying x=0.065 as an optimum composition for piezoelectric (Bi<sub>0.5</sub>Na<sub>0.5</sub>)<sub>(1-x)</sub>Ba<sub>x</sub>TiO<sub>3</sub> ceramics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130154503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393334
C.-T. Tseng, C. Tu, F.-T. Wang
It has been a goal to find high dielectric permittivity and Curie temperature in high-strain crystals to enhance piezoelectric coefficient and thermal stability. Dielectric permittivity has been measured as functions of temperature and frequency in (001)-cut Pb(Fe1/2Nb1/2)1-xTixO3 (PFNTx) single crystals with starting composition at x=0.48. The tetragonal PFNT single crystals exhibit giant dielectric permittivity, high Curie (or depolarization) temperature, and low electric resistance, which are sensitive to Fe ion content, measured frequency, and thermal annealing treatment. A first-order-type tetragonalrarrcubic phase transition takes place at TCcong515 K. Ac electric conductivity increases with temperature dramatically, likely due to vacancy hopping and valance reduction of Fe3+ to Fe2+ ions. This study suggests that Fe ion is a promising candidate for dopant to enhance dielectric permittivity and depolarization temperature in Pb(Mg1/3Nb2/3)1-xTixO3 (PMNT) and Pb(Zn1/3Nb2/3)1-xTixO3 (PZNT) crystals.
{"title":"Colossal Dielectric Permittivity in Tetragonal Pb(Fe1/2Nb1/2)1-xTixO3 Single Crystals","authors":"C.-T. Tseng, C. Tu, F.-T. Wang","doi":"10.1109/ISAF.2007.4393334","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393334","url":null,"abstract":"It has been a goal to find high dielectric permittivity and Curie temperature in high-strain crystals to enhance piezoelectric coefficient and thermal stability. Dielectric permittivity has been measured as functions of temperature and frequency in (001)-cut Pb(Fe<sub>1/2</sub>Nb<sub>1/2</sub>)<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (PFNTx) single crystals with starting composition at x=0.48. The tetragonal PFNT single crystals exhibit giant dielectric permittivity, high Curie (or depolarization) temperature, and low electric resistance, which are sensitive to Fe ion content, measured frequency, and thermal annealing treatment. A first-order-type tetragonalrarrcubic phase transition takes place at T<sub>C</sub>cong515 K. Ac electric conductivity increases with temperature dramatically, likely due to vacancy hopping and valance reduction of Fe3+ to Fe2+ ions. This study suggests that Fe ion is a promising candidate for dopant to enhance dielectric permittivity and depolarization temperature in Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>1-x</sub>TixO<sub>3</sub> (PMNT) and Pb(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>1-x</sub>TixO<sub>3</sub> (PZNT) crystals.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125705687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393152
Y. Nagano, E. Fujii
System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.
{"title":"System LSI Embedded Ferroelectric Memory Technology","authors":"Y. Nagano, E. Fujii","doi":"10.1109/ISAF.2007.4393152","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393152","url":null,"abstract":"System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125248595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393359
Qiang Chen, Lin Chen, Qishou Li, Xiaoluo Shi, Zhiqiang Liu, Xi Yue, D. Xiao, Jianguo Zhu
Density K4CuNb8O23 modified (Na0.5K0.5)NbO3 (NKN:KCN) ceramics with high mechanical quality factor Qm were synthesized by using conventional mixing oxide process. The maximum value of Qm of NKN:KCN ceramics reaches up to 1150, the planar electromechanical coefficient kp of NKN:KCN ceramics maintains a relative high level, which is about 40%. Moreover, the Curie temperature of NKN:KCN ceramics is above 380 . Based upon this kind of lead-free piezoelectric ceramics, a new type of lead-free middle frequency (455 kHz) ceramic resonators were designed and produced. This kind of lead-free ceramic resonator can be used in the remote controller.
{"title":"High Qm Lead Free Sodium Potassium Niobate Piezoelectric Ceramics and Middle Frequency Resonator","authors":"Qiang Chen, Lin Chen, Qishou Li, Xiaoluo Shi, Zhiqiang Liu, Xi Yue, D. Xiao, Jianguo Zhu","doi":"10.1109/ISAF.2007.4393359","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393359","url":null,"abstract":"Density K<sub>4</sub>CuNb<sub>8</sub>O<sub>23</sub> modified (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub> (NKN:KCN) ceramics with high mechanical quality factor Q<sub>m</sub> were synthesized by using conventional mixing oxide process. The maximum value of Q<sub>m</sub> of NKN:KCN ceramics reaches up to 1150, the planar electromechanical coefficient k<sub>p</sub> of NKN:KCN ceramics maintains a relative high level, which is about 40%. Moreover, the Curie temperature of NKN:KCN ceramics is above 380 . Based upon this kind of lead-free piezoelectric ceramics, a new type of lead-free middle frequency (455 kHz) ceramic resonators were designed and produced. This kind of lead-free ceramic resonator can be used in the remote controller.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"4 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127471115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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