Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355193
P. Galy, S. Athanasiou, S. Cristoloveanu
In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.
{"title":"New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode","authors":"P. Galy, S. Athanasiou, S. Cristoloveanu","doi":"10.1109/SMICND.2015.7355193","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355193","url":null,"abstract":"In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355198
V. Banu, P. Godignon, J. Millán
This paper continues our previous works about the integrated circuits development on the 4H-SiC semiconductor, based on finger gate MESFETs. It describes a comparator designed exclusively with normally-on MESFETs and epitaxial resistors. For this novel circuit design we have used the SPICE models previously extracted from devices further used for fabrication of functional complex analog and digital circuitry (thermally compensated analog voltage reference, basic logic gate and various flip-flops).The schematic is presented in detail from the block schematic to the transistor level. The comparator waveforms and the time delays are presented for zero, positive and negative reference levels both at RT and 250°C. The Comparator circuit was successfully simulated using sinusoidal and triangular signals at 100 kHz and 200 kHz. However, the presented waveforms are only for 100 kHz sinusoidal signal.
{"title":"Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor","authors":"V. Banu, P. Godignon, J. Millán","doi":"10.1109/SMICND.2015.7355198","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355198","url":null,"abstract":"This paper continues our previous works about the integrated circuits development on the 4H-SiC semiconductor, based on finger gate MESFETs. It describes a comparator designed exclusively with normally-on MESFETs and epitaxial resistors. For this novel circuit design we have used the SPICE models previously extracted from devices further used for fabrication of functional complex analog and digital circuitry (thermally compensated analog voltage reference, basic logic gate and various flip-flops).The schematic is presented in detail from the block schematic to the transistor level. The comparator waveforms and the time delays are presented for zero, positive and negative reference levels both at RT and 250°C. The Comparator circuit was successfully simulated using sinusoidal and triangular signals at 100 kHz and 200 kHz. However, the presented waveforms are only for 100 kHz sinusoidal signal.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132530133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355164
E. Voinea, N. Cioateră, A. Barbu, A. Simioneascu, C. Spînu
Oxide ion conductors are an important group of materials which have been increasingly studied due to their applications in many devices of high technological interest, especially in Solid Oxide Fuel Cells (SOFC) which are efficient and environmentally friendly energy convertors. In this work we study an inexpensive, suitable and recyclable material with apatite structure. Lanthanum silicate with apatite type structure, La10Si6O27,was synthesized by two pathways: sol-gel and co-precipitation. The as-obtained powders were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. Samples with different morphologies consisting of a mixture of phases were obtained.
{"title":"Synthesis and characterization of La10Si6O27","authors":"E. Voinea, N. Cioateră, A. Barbu, A. Simioneascu, C. Spînu","doi":"10.1109/SMICND.2015.7355164","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355164","url":null,"abstract":"Oxide ion conductors are an important group of materials which have been increasingly studied due to their applications in many devices of high technological interest, especially in Solid Oxide Fuel Cells (SOFC) which are efficient and environmentally friendly energy convertors. In this work we study an inexpensive, suitable and recyclable material with apatite structure. Lanthanum silicate with apatite type structure, La10Si6O27,was synthesized by two pathways: sol-gel and co-precipitation. The as-obtained powders were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. Samples with different morphologies consisting of a mixture of phases were obtained.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"143 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133088139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355163
I. Bineva, T. Hristova-Vassileva, B. Pejova, D. Nesheva, Z. Levi, Z. Aneva
Long term morphological and structural changes of ZnxCd1-xSe (x=0.4, 0.6 and 0.8) thin films, obtained by solid state alloying of consecutively deposited submonolayers of ZnSe and CdSe, were investigated by means of Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The XRD investigations show typical solid solution patterns without any decomposition. A relaxation of the lattice is observed through the years, showing tendency towards thermodynamic equilibrium. A. non-uniform strain is observed for x= 0.4 and 0.8, which is proven by the AFM measurements to be due to structural defects. 2D fast Fourrier transform patterns are derived from the AFM images and grain structure evolution and various morphological changes occurring in the films with time are observed and discussed.
{"title":"Long term ageing changes in structure and morphology of nanocrystalline ZnxCd1−xSe thin films","authors":"I. Bineva, T. Hristova-Vassileva, B. Pejova, D. Nesheva, Z. Levi, Z. Aneva","doi":"10.1109/SMICND.2015.7355163","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355163","url":null,"abstract":"Long term morphological and structural changes of ZnxCd1-xSe (x=0.4, 0.6 and 0.8) thin films, obtained by solid state alloying of consecutively deposited submonolayers of ZnSe and CdSe, were investigated by means of Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The XRD investigations show typical solid solution patterns without any decomposition. A relaxation of the lattice is observed through the years, showing tendency towards thermodynamic equilibrium. A. non-uniform strain is observed for x= 0.4 and 0.8, which is proven by the AFM measurements to be due to structural defects. 2D fast Fourrier transform patterns are derived from the AFM images and grain structure evolution and various morphological changes occurring in the films with time are observed and discussed.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124473932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355212
T. Sandu
It is presented a theory that permits to calculate the ac dielectrophoretic force acting on biological cells and other micro- and nanoparticles of arbitrary shape. The theory includes intrinsically all the higher-order terms of dielectrophoretic force without additional computation costs. For sufficiently small electric field gradients the dielectrophoretic force is weighted by the induced cell dipole moment that depends on both shape and electric parameters of the cell. Examples of red blood cells are given.
{"title":"Calculation of dielectrophoretic force acting on biological cells and on micro- and nanoparticles","authors":"T. Sandu","doi":"10.1109/SMICND.2015.7355212","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355212","url":null,"abstract":"It is presented a theory that permits to calculate the ac dielectrophoretic force acting on biological cells and other micro- and nanoparticles of arbitrary shape. The theory includes intrinsically all the higher-order terms of dielectrophoretic force without additional computation costs. For sufficiently small electric field gradients the dielectrophoretic force is weighted by the induced cell dipole moment that depends on both shape and electric parameters of the cell. Examples of red blood cells are given.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124916001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355199
G. Pristavu, A. Vasilica, V. Anghel, R. Pascu, G. Brezeanu, F. Draghici
The use of high power freewheeling diodes - Silicon Carbide Schottky and PiN rectifiers - in buck converter-based LED drivers is investigated. Applications biasing up to 60 LEDs at input voltages reaching 250V are developed for both diode types. Despite different switching behavior and dissipated power between freewheeling devices, experimental results show a significant converter driving capability extension and an efficiency of over 95% in all cases.
{"title":"High voltage freewheeling diodes in an extended capability LED driving application","authors":"G. Pristavu, A. Vasilica, V. Anghel, R. Pascu, G. Brezeanu, F. Draghici","doi":"10.1109/SMICND.2015.7355199","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355199","url":null,"abstract":"The use of high power freewheeling diodes - Silicon Carbide Schottky and PiN rectifiers - in buck converter-based LED drivers is investigated. Applications biasing up to 60 LEDs at input voltages reaching 250V are developed for both diode types. Despite different switching behavior and dissipated power between freewheeling devices, experimental results show a significant converter driving capability extension and an efficiency of over 95% in all cases.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125767016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355196
M. Kreissig, Alexander Richter, F. Ellinger
This work presents a highly adaptive circuit for amplifying a signal of a spin torque oscillator (STO). For achieving power matching with respect to the STO's variable output resistance, the input impedance of the amplifier can be tuned in the range of 50 Ω to more than 500 Ω. Multiple amplifier stages are deployed leading to accumulated gain of >60 dB at 1 GHz. The -3 dB bandwidth of 1.5 GHz makes this amplifier suitable for vortex STO. A fully integrated and adjustable auto-zero feedback for compensating the DC-offset has been implemented in order to convert the single ended signal into a differential one. The circuit was realized in a 180nm BiCMOS process and includes an I2C-slave interface to adjust on-chip currents and control signal switches.
{"title":"A variable gain amplifier with variable input impedance and auto-zero feedback for spin torque oscillators","authors":"M. Kreissig, Alexander Richter, F. Ellinger","doi":"10.1109/SMICND.2015.7355196","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355196","url":null,"abstract":"This work presents a highly adaptive circuit for amplifying a signal of a spin torque oscillator (STO). For achieving power matching with respect to the STO's variable output resistance, the input impedance of the amplifier can be tuned in the range of 50 Ω to more than 500 Ω. Multiple amplifier stages are deployed leading to accumulated gain of >60 dB at 1 GHz. The -3 dB bandwidth of 1.5 GHz makes this amplifier suitable for vortex STO. A fully integrated and adjustable auto-zero feedback for compensating the DC-offset has been implemented in order to convert the single ended signal into a differential one. The circuit was realized in a 180nm BiCMOS process and includes an I2C-slave interface to adjust on-chip currents and control signal switches.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355228
G. Muscalu, Adrian Anghelescu, B. Firtat
Piezoelectric MEMS cantilevers have been under strong demand in the last years. Most of them made in the thin film technology and in different configurations like unimorphs, bimorphs or multimorphs are targeted for sensor and actuator applications. Our paper is about the design optimization of piezoelectric harvesting cantilevers able to convert mechanical vibrations from the surrounding environment to electrical energy via direct piezoelectric effect. Different unimorph piezoelectric harvester geometries and materials are proposed, all employing flexure mode. All these models are simulated using CoventorWare software. A double array of cantilevers (2 × 10) is used in order to obtain a greater output power magnitude, up to ~1.46 μW.
{"title":"Design optimization of MEMS piezoelectric energy cantilever device for environment vibrations harvesting","authors":"G. Muscalu, Adrian Anghelescu, B. Firtat","doi":"10.1109/SMICND.2015.7355228","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355228","url":null,"abstract":"Piezoelectric MEMS cantilevers have been under strong demand in the last years. Most of them made in the thin film technology and in different configurations like unimorphs, bimorphs or multimorphs are targeted for sensor and actuator applications. Our paper is about the design optimization of piezoelectric harvesting cantilevers able to convert mechanical vibrations from the surrounding environment to electrical energy via direct piezoelectric effect. Different unimorph piezoelectric harvester geometries and materials are proposed, all employing flexure mode. All these models are simulated using CoventorWare software. A double array of cantilevers (2 × 10) is used in order to obtain a greater output power magnitude, up to ~1.46 μW.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131590971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355233
S. Mihalache, Irina Flamaropol, Florin-Silviu Dumitru, L. Dobrescu, D. Dobrescu
This paper presents an alternative solution to cooling applications by means of the Peltier effect, advantageous because there are no moving parts or fluids, leading to safer, reliable, and eco-friendly operation. Driven by DC power, our efficient system uses a Buck converter with custom designed blocks to ensure high performance.
{"title":"Automated cooling control system through Peltier effect and high efficiency control using a DC-DC Buck converter","authors":"S. Mihalache, Irina Flamaropol, Florin-Silviu Dumitru, L. Dobrescu, D. Dobrescu","doi":"10.1109/SMICND.2015.7355233","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355233","url":null,"abstract":"This paper presents an alternative solution to cooling applications by means of the Peltier effect, advantageous because there are no moving parts or fluids, leading to safer, reliable, and eco-friendly operation. Driven by DC power, our efficient system uses a Buck converter with custom designed blocks to ensure high performance.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122257543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355186
C. Cobianu, I. Georgescu, Michael Hughes, Stuart Heath, F. Haran
In this work we investigate the effects of the pulse duration and geometry of the tank on the time response of the guided wave radar (GWR) level transmitter. By 1COMSOL® modelling and simulation we show that for shorter pulses below 0.5ns and larger diameters of the nozzle (above 150 mm) parasitic higher order modes, like TE11 are generated, affecting the accuracy of level measurement. This TE11 mode interferes with TEM mode creating standing waves evidenced as “ringing” in the time domain response. The experimental results shown here for pulse duration of 0.27 ns and a diameter of the nozzle of 152 mm are in very good agreement with the model.
{"title":"Evidence and effects of higher order modes on the response of guided wave radar-based level sensors","authors":"C. Cobianu, I. Georgescu, Michael Hughes, Stuart Heath, F. Haran","doi":"10.1109/SMICND.2015.7355186","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355186","url":null,"abstract":"In this work we investigate the effects of the pulse duration and geometry of the tank on the time response of the guided wave radar (GWR) level transmitter. By 1COMSOL® modelling and simulation we show that for shorter pulses below 0.5ns and larger diameters of the nozzle (above 150 mm) parasitic higher order modes, like TE11 are generated, affecting the accuracy of level measurement. This TE11 mode interferes with TEM mode creating standing waves evidenced as “ringing” in the time domain response. The experimental results shown here for pulse duration of 0.27 ns and a diameter of the nozzle of 152 mm are in very good agreement with the model.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116451937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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