Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355229
A. Baracu, A. Gurban, I. Giangu, F. Craciunoiu, V. Buiculescu, A. Dinescu, R. Muller, L. Rotariu, C. Bala, Cristina Mitrea
We report in this paper the fabrication and characterization of a 121 MHz delay-line SAW device selective chemical sensor micro-fabricated on 36° rotated Y-cut X-propagating LiTaO3. A custom designed test fixture was manufactured for RF measurements. The proof of the sensor concept was based on detection of high molecular weight targets in liquid samples. Thus, the antigen-antibody label-free interaction was studied by monitoring the variation of the angle phase of SAW sensor with the concentration of some target biological analyte.
{"title":"Selective chemical sensor for liquid specimens based on lithium tantalate surface acoustic wave devices","authors":"A. Baracu, A. Gurban, I. Giangu, F. Craciunoiu, V. Buiculescu, A. Dinescu, R. Muller, L. Rotariu, C. Bala, Cristina Mitrea","doi":"10.1109/SMICND.2015.7355229","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355229","url":null,"abstract":"We report in this paper the fabrication and characterization of a 121 MHz delay-line SAW device selective chemical sensor micro-fabricated on 36° rotated Y-cut X-propagating LiTaO3. A custom designed test fixture was manufactured for RF measurements. The proof of the sensor concept was based on detection of high molecular weight targets in liquid samples. Thus, the antigen-antibody label-free interaction was studied by monitoring the variation of the angle phase of SAW sensor with the concentration of some target biological analyte.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131026924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355197
C. Stănescu, C. Dinca, Andrei Sevcenco, R. Iacob
The paper presents three approaches for frequency compensation in chopper offset-stabilized amplifiers with symmetrical passive RC notch filter with two cutoff frequencies. The filter has two cutoff frequencies: the chopping frequency itself and the fifth harmonic of the chopping frequency. The frequency compensation network is connected either at the input of the notch filter, or at its output, or between its two sections. The large signal transient response is evaluated in terms of the overshoot/undershoot and the settling time. Three circuits using these techniques were fabricated and evaluated. The approach that uses the frequency compensation network connected between the sections of the filter has the best results, except for the chopping ripple rejection.
{"title":"Optimizing frequency compensation in chopper offset-stabilized amplifiers with symmetrical RC notch filters","authors":"C. Stănescu, C. Dinca, Andrei Sevcenco, R. Iacob","doi":"10.1109/SMICND.2015.7355197","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355197","url":null,"abstract":"The paper presents three approaches for frequency compensation in chopper offset-stabilized amplifiers with symmetrical passive RC notch filter with two cutoff frequencies. The filter has two cutoff frequencies: the chopping frequency itself and the fifth harmonic of the chopping frequency. The frequency compensation network is connected either at the input of the notch filter, or at its output, or between its two sections. The large signal transient response is evaluated in terms of the overshoot/undershoot and the settling time. Three circuits using these techniques were fabricated and evaluated. The approach that uses the frequency compensation network connected between the sections of the filter has the best results, except for the chopping ripple rejection.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115822655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355206
Valeriu Beiu, M. Tache
This paper looks at a classical CMOS NOR-2 gate as well as Schmitt trigger (ST) versions, when the transistors are sized conventionally and unconventionally. ST gates exhibit positive feedback leading to better static noise margins (SNMs), hence less sensitive to noises (i.e., more reliable). The ST concept has lately been used for SRAM cells, with a few papers targeting digital logic. Here we explore the whole voltage and performance range, characterizing SNM, power, delay, and power-delay-product of ST NOR-2 gates, with the aim of getting a better understanding of their advantages for digital logic.
{"title":"On using Schmitt trigger for digital logic","authors":"Valeriu Beiu, M. Tache","doi":"10.1109/SMICND.2015.7355206","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355206","url":null,"abstract":"This paper looks at a classical CMOS NOR-2 gate as well as Schmitt trigger (ST) versions, when the transistors are sized conventionally and unconventionally. ST gates exhibit positive feedback leading to better static noise margins (SNMs), hence less sensitive to noises (i.e., more reliable). The ST concept has lately been used for SRAM cells, with a few papers targeting digital logic. Here we explore the whole voltage and performance range, characterizing SNM, power, delay, and power-delay-product of ST NOR-2 gates, with the aim of getting a better understanding of their advantages for digital logic.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355178
B. Șerban, V. Avramescu, M. Brezeanu, R. Gavrila, A. Dinescu, O. Buiu, C. Cobianu, S. Beck, B. Moffat
This paper reports on the design and synthesis of a talc-impregnated polyimide film exhibiting reduced relative humidity (RH) hysteresis. The morphology of both simple polyimide and talc-impregnated polyimide RH sensing layers are investigated by means of Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). When deposited on quartz crystal microbalance (QCM) substrates, the talc-impregnated polyimide layer yields a highly linear response and a resonant frequency hysteresis improvement as high as 36% with respect to simple polyimide. These experimental results recommend the proposed layer as suitable for high performance RH capacitive sensors.
{"title":"Talc-impregnated polyimide for humidity sensors with improved hysteresis","authors":"B. Șerban, V. Avramescu, M. Brezeanu, R. Gavrila, A. Dinescu, O. Buiu, C. Cobianu, S. Beck, B. Moffat","doi":"10.1109/SMICND.2015.7355178","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355178","url":null,"abstract":"This paper reports on the design and synthesis of a talc-impregnated polyimide film exhibiting reduced relative humidity (RH) hysteresis. The morphology of both simple polyimide and talc-impregnated polyimide RH sensing layers are investigated by means of Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). When deposited on quartz crystal microbalance (QCM) substrates, the talc-impregnated polyimide layer yields a highly linear response and a resonant frequency hysteresis improvement as high as 36% with respect to simple polyimide. These experimental results recommend the proposed layer as suitable for high performance RH capacitive sensors.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114976480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355192
Dan Simon, C. Boianceanu, G. De Mey, V. Topa
The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
{"title":"Reliability characterization of power devices which operate under power cycling","authors":"Dan Simon, C. Boianceanu, G. De Mey, V. Topa","doi":"10.1109/SMICND.2015.7355192","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355192","url":null,"abstract":"The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128905289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355230
D. Duca, T. Potlog, M. Dobromir, V. Nica
CdSe thin films have been prepared by close spaced sublimation technique. The deposited films have been characterized by Scanning Electronic Microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Structural investigations showed that studied samples are polycrystalline and have a hexagonal (wurtzite)) structure. Surface morphology studies SEM shows that the nanograins are uniformly distributed over the entire surface and depends on the substrate temperature. The XPS analysis of CdSe thin films indicates the formation on the surface of the CdO oxide.
{"title":"Structural and surface studies of the cdse thin films deposited by close space sublimation method","authors":"D. Duca, T. Potlog, M. Dobromir, V. Nica","doi":"10.1109/SMICND.2015.7355230","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355230","url":null,"abstract":"CdSe thin films have been prepared by close spaced sublimation technique. The deposited films have been characterized by Scanning Electronic Microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Structural investigations showed that studied samples are polycrystalline and have a hexagonal (wurtzite)) structure. Surface morphology studies SEM shows that the nanograins are uniformly distributed over the entire surface and depends on the substrate temperature. The XPS analysis of CdSe thin films indicates the formation on the surface of the CdO oxide.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117124081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355236
Roxana-Daniela Amariutei, L. Goras, M. Rafaila, Andi Buzo, G. Pelz
This paper focuses on the analysis of limit cycles that appear on the output voltage of a DC-DC Buck converter. Typically, the output filter of the converter is designed in open-loop, considering the maximum allowable values for the output voltage and inductor current ripples. When closing the loop, the converter may exhibit unwanted periodic oscillations in steady state caused by the nonlinearities in the system. The amplitudes of these oscillations are hard to predict. This paper summarizes the conditions that should be taken into account when designing the closed loop converter. These conditions are used furthermore for tuning the PID parameters for a DC-DC Buck converter under input and load step scenarios. The tuning of the PID takes into consideration transient performances such as overshoot and settling time for specified test cases but also the conditions needed for removing the limit cycles from the output voltage.
{"title":"On limit cycles suppression in DC-DC Buck converters","authors":"Roxana-Daniela Amariutei, L. Goras, M. Rafaila, Andi Buzo, G. Pelz","doi":"10.1109/SMICND.2015.7355236","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355236","url":null,"abstract":"This paper focuses on the analysis of limit cycles that appear on the output voltage of a DC-DC Buck converter. Typically, the output filter of the converter is designed in open-loop, considering the maximum allowable values for the output voltage and inductor current ripples. When closing the loop, the converter may exhibit unwanted periodic oscillations in steady state caused by the nonlinearities in the system. The amplitudes of these oscillations are hard to predict. This paper summarizes the conditions that should be taken into account when designing the closed loop converter. These conditions are used furthermore for tuning the PID parameters for a DC-DC Buck converter under input and load step scenarios. The tuning of the PID takes into consideration transient performances such as overshoot and settling time for specified test cases but also the conditions needed for removing the limit cycles from the output voltage.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130624531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355213
G. Boldeiu, D. Vasilache, V. Moagar, A. Stefanescu, G. Ciuprina
In this paper an analysis of the von Mises stress in the RF MEMS switch structures is presented. This study was performed to analyze and optimize the stress in the anchors area for switch structures addressed to K and W frequency bands. Different types of anchors were taken into consideration and a comparison of von Mises stress has been performed. Optimization showed that it is possible to reduce stress up to more than 80% of its baseline, to the values much smaller than the breaking coefficient (100Mpa).
{"title":"Study of the von Mises stress in RF MEMS switch anchors","authors":"G. Boldeiu, D. Vasilache, V. Moagar, A. Stefanescu, G. Ciuprina","doi":"10.1109/SMICND.2015.7355213","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355213","url":null,"abstract":"In this paper an analysis of the von Mises stress in the RF MEMS switch structures is presented. This study was performed to analyze and optimize the stress in the anchors area for switch structures addressed to K and W frequency bands. Different types of anchors were taken into consideration and a comparison of von Mises stress has been performed. Optimization showed that it is possible to reduce stress up to more than 80% of its baseline, to the values much smaller than the breaking coefficient (100Mpa).","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124405125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355200
Valeriu Beiu, M. Tache
This paper details preliminary results for a novel statistical analysis, using the delay of an inverter (the basic element of SRAM cells) as an example. The results obtained are statistically meaningful, and should allow for more accurate, faster, and better yield estimates.
{"title":"Revisiting delay variations statistically through an example","authors":"Valeriu Beiu, M. Tache","doi":"10.1109/SMICND.2015.7355200","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355200","url":null,"abstract":"This paper details preliminary results for a novel statistical analysis, using the delay of an inverter (the basic element of SRAM cells) as an example. The results obtained are statistically meaningful, and should allow for more accurate, faster, and better yield estimates.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126263459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355161
Constantin Florin Comanescu, A. Istrate, L. Veca, F. Năstase, R. Gavrila, M. Purica
A comparative study regarding single layer graphene (GR) transfer from copper to oxidized silicon substrate using Soak and Peel delamination, Contact printing, Electrochemical delamination is presented. Structural modifications of GR were determined by Raman spectroscopy, while optical and atomic force microscopy emphases the size and area of the transferred GR films.
{"title":"Micro-Raman spectroscopy of graphene transferred by wet chemical methods","authors":"Constantin Florin Comanescu, A. Istrate, L. Veca, F. Năstase, R. Gavrila, M. Purica","doi":"10.1109/SMICND.2015.7355161","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355161","url":null,"abstract":"A comparative study regarding single layer graphene (GR) transfer from copper to oxidized silicon substrate using Soak and Peel delamination, Contact printing, Electrochemical delamination is presented. Structural modifications of GR were determined by Raman spectroscopy, while optical and atomic force microscopy emphases the size and area of the transferred GR films.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129146778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：