Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355227
G. Chiranu, F. Babarada
In this paper, we present the implications that the Lightly Doped Drain-LDD technique used for Metal Oxide Semiconductor-MOS fabrication of n-channel transistor has on different device parameters. The discussion focuses on the influence of the n- doping of drain, respectively source on the electric field, one of the most important issues of today's technology, but takes also into consideration another aspects such as the impact of LDD on series resistance of the device and channel length contribution on breakdown voltage reduction when considering drain/source light doping.
{"title":"LDD structure influence on n-MOSFET parameters","authors":"G. Chiranu, F. Babarada","doi":"10.1109/SMICND.2015.7355227","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355227","url":null,"abstract":"In this paper, we present the implications that the Lightly Doped Drain-LDD technique used for Metal Oxide Semiconductor-MOS fabrication of n-channel transistor has on different device parameters. The discussion focuses on the influence of the n- doping of drain, respectively source on the electric field, one of the most important issues of today's technology, but takes also into consideration another aspects such as the impact of LDD on series resistance of the device and channel length contribution on breakdown voltage reduction when considering drain/source light doping.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"652 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116421271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355187
D. C. Geambasu, M. Banciu, L. Nedelcu, R. Ramer
New type of dielectric resonator antennas (DRAs) with axial symmetry are proposed for frequencies around 5.8 GHz. Each element uses a high permittivity cylindrical resonator and a low permittivity resonator of a truncated cone shape. Two types of microstrip-fed DRAs were investigated. By coupling the resonance modes, the first type and the second type DRA exhibit fractional impedance bandwidth of 15.6% and 19.7%, respectively.
{"title":"New antennas with dielectric resonators of axial symmetry","authors":"D. C. Geambasu, M. Banciu, L. Nedelcu, R. Ramer","doi":"10.1109/SMICND.2015.7355187","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355187","url":null,"abstract":"New type of dielectric resonator antennas (DRAs) with axial symmetry are proposed for frequencies around 5.8 GHz. Each element uses a high permittivity cylindrical resonator and a low permittivity resonator of a truncated cone shape. Two types of microstrip-fed DRAs were investigated. By coupling the resonance modes, the first type and the second type DRA exhibit fractional impedance bandwidth of 15.6% and 19.7%, respectively.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115551159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355154
A. Lepadatu, C. Palade, A. Slav, S. Lazanu
The effects of strain field are studied in Si wafers implanted with heavy iodine and bismuth ions and in multi-quantum well structures. The experimental method of thermally stimulated currents without applied bias is used, and the trapping centres parameters are determined by modelling the discharge curves. In both cases, the strain field produces temperature-dependent parameters of trapping levels. So, due to the high strain field in the neighbourhood of implanted ions, energy levels broaden and cross sections become temperature dependent. In multilayer structures, for the trapping centres corresponding to strain-induced defects both concentrations and capture cross sections are temperature dependent.
{"title":"Influence of strain field on nanoscale electronic processes in silicon-based semiconductors","authors":"A. Lepadatu, C. Palade, A. Slav, S. Lazanu","doi":"10.1109/SMICND.2015.7355154","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355154","url":null,"abstract":"The effects of strain field are studied in Si wafers implanted with heavy iodine and bismuth ions and in multi-quantum well structures. The experimental method of thermally stimulated currents without applied bias is used, and the trapping centres parameters are determined by modelling the discharge curves. In both cases, the strain field produces temperature-dependent parameters of trapping levels. So, due to the high strain field in the neighbourhood of implanted ions, energy levels broaden and cross sections become temperature dependent. In multilayer structures, for the trapping centres corresponding to strain-induced defects both concentrations and capture cross sections are temperature dependent.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122258098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-12DOI: 10.1109/SMICND.2015.7355190
M. Lazar, D. Carole, C. Raynaud, G. Ferro, S. Sejil, F. Laariedh, C. Brylinski, D. Planson, H. Morel
P-type 4H-SiC layers formed by ion implantation need high temperature process generating surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 1020 cm-3 range or more. The depth of this p-type layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated integrating p-type layers created by Al ion implantation or VLS growth. The P-type VLS layers improve the access resistances on the electrodes of the fabricated devices.
{"title":"Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices","authors":"M. Lazar, D. Carole, C. Raynaud, G. Ferro, S. Sejil, F. Laariedh, C. Brylinski, D. Planson, H. Morel","doi":"10.1109/SMICND.2015.7355190","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355190","url":null,"abstract":"P-type 4H-SiC layers formed by ion implantation need high temperature process generating surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 1020 cm-3 range or more. The depth of this p-type layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated integrating p-type layers created by Al ion implantation or VLS growth. The P-type VLS layers improve the access resistances on the electrodes of the fabricated devices.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128249664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355210
O. Nedelcu, Ramona Corman, D. Stan, C. Mihailescu
Electroporation represents one of the techniques used for cell research. By membrane permeabilization, biological samples can be introduced into the cells or intercellular content is released for further analysis providing information for diagnosis and treatment. This techniques is achieved in microfluidic systems with microelectrodes that induce a high electric field in the vicinity of cells to generate nanopores in cell membrane. In this paper, a micro-electro-fluidic system with channels and various configurations of electrodes is studied by electrostatic simulation in order to find the electric field distribution that ensures electroporation.
{"title":"Numerical study of induced electric field in a microfluidic system for cell electroporation","authors":"O. Nedelcu, Ramona Corman, D. Stan, C. Mihailescu","doi":"10.1109/SMICND.2015.7355210","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355210","url":null,"abstract":"Electroporation represents one of the techniques used for cell research. By membrane permeabilization, biological samples can be introduced into the cells or intercellular content is released for further analysis providing information for diagnosis and treatment. This techniques is achieved in microfluidic systems with microelectrodes that induce a high electric field in the vicinity of cells to generate nanopores in cell membrane. In this paper, a micro-electro-fluidic system with channels and various configurations of electrodes is studied by electrostatic simulation in order to find the electric field distribution that ensures electroporation.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120926379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355225
R. Pascu, F. Craciunoiu, M. Kusko, M. Mihaila, G. Pristavu, M. Badila, G. Brezeanu
Interface state density (Dit) at SiO2/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for Dit determination (both C-V at different temperatures in the range of 80-300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of Dit is observed, almost one order of magnitude, after a post oxidation annealing (POA) in POCl3 ambient, compared to as-grown dry oxidized sample.
{"title":"SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing","authors":"R. Pascu, F. Craciunoiu, M. Kusko, M. Mihaila, G. Pristavu, M. Badila, G. Brezeanu","doi":"10.1109/SMICND.2015.7355225","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355225","url":null,"abstract":"Interface state density (D<sub>it</sub>) at SiO<sub>2</sub>/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for D<sub>it</sub> determination (both C-V at different temperatures in the range of 80-300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of D<sub>it</sub> is observed, almost one order of magnitude, after a post oxidation annealing (POA) in POCl<sub>3</sub> ambient, compared to as-grown dry oxidized sample.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124802159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355219
E. Ceuca, V. Trifa
This paper present the experimental case.comstudy, concerning the development of control mode for modern e-bike controller developed in Alba Iulia laboratory. The paper describes the stage methodology and strategy approach in first part and the experimental steps and tests to obtain a functional controller in order to understand and improve the design and achieve an optimal operation for the circuits involved in practical applications.
{"title":"Strategy approach for developing the control mode for modern e-bike controller developed in laboratory at “1 decembrie 1918” university of alba iulia","authors":"E. Ceuca, V. Trifa","doi":"10.1109/SMICND.2015.7355219","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355219","url":null,"abstract":"This paper present the experimental case.comstudy, concerning the development of control mode for modern e-bike controller developed in Alba Iulia laboratory. The paper describes the stage methodology and strategy approach in first part and the experimental steps and tests to obtain a functional controller in order to understand and improve the design and achieve an optimal operation for the circuits involved in practical applications.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126717119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355221
E. Ceuca, G. Brezeanu, V. Trifa
The aim of this paper is to present the implementation of an energy recovery system based on BLDC motor deceleration, in order to be used in e-bike's propulsion systems. The energy which should be lost during deceleration is now recovered, stored and then used in other applications. The energy recovery and reutilization leads to a considerable decrease in total energy consumption necessary for traction mode. At the same time combining with the super capacitors usage is protecting the life expectancy of the battery, which normally supplies the propulsion system of an electric motor.
{"title":"Study for developing the energy recovering circuit for modern e-bike controller","authors":"E. Ceuca, G. Brezeanu, V. Trifa","doi":"10.1109/SMICND.2015.7355221","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355221","url":null,"abstract":"The aim of this paper is to present the implementation of an energy recovery system based on BLDC motor deceleration, in order to be used in e-bike's propulsion systems. The energy which should be lost during deceleration is now recovered, stored and then used in other applications. The energy recovery and reutilization leads to a considerable decrease in total energy consumption necessary for traction mode. At the same time combining with the super capacitors usage is protecting the life expectancy of the battery, which normally supplies the propulsion system of an electric motor.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123661740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355234
C. Răducan, M. Neag
This paper presents a high slew-rate error amplifier (EA) used to implement a capacitorless low-dropout voltage regulator (LDO) with a very fast transient response. The proposed EA improves a recently published OA structure, by employing high-swing input buffers and a local common mode feedback. Thus, the figures-of-merit related to the EA gain-bandwidth and slew-rate are 2.75, respectively 24 times better than for the initial OA. The EA was used to implement a LDO that requires only 1.1uA quiescent current but has an output current capability of 100mA. The high slew-rate of the EA helps this LDO to achieve low overshoot/undershoot (200mV/274mV) in case of a fast (1us) load step of 100mA, while employing only an on-chip load capacitance of 100pF. Compared with similar implementations, the proposed LDO yields same or better transient performance while requiring significantly less quiescent current. Thus its figure of merit results at least three times better than for its counterparts. The line and load regulation are 0.07mV/V, respectively 0.0028mV/mA.
{"title":"Capacitorless LDO with fast transient response based on a high slew-rate error amplifier","authors":"C. Răducan, M. Neag","doi":"10.1109/SMICND.2015.7355234","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355234","url":null,"abstract":"This paper presents a high slew-rate error amplifier (EA) used to implement a capacitorless low-dropout voltage regulator (LDO) with a very fast transient response. The proposed EA improves a recently published OA structure, by employing high-swing input buffers and a local common mode feedback. Thus, the figures-of-merit related to the EA gain-bandwidth and slew-rate are 2.75, respectively 24 times better than for the initial OA. The EA was used to implement a LDO that requires only 1.1uA quiescent current but has an output current capability of 100mA. The high slew-rate of the EA helps this LDO to achieve low overshoot/undershoot (200mV/274mV) in case of a fast (1us) load step of 100mA, while employing only an on-chip load capacitance of 100pF. Compared with similar implementations, the proposed LDO yields same or better transient performance while requiring significantly less quiescent current. Thus its figure of merit results at least three times better than for its counterparts. The line and load regulation are 0.07mV/V, respectively 0.0028mV/mA.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131132916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355162
L. Frunza, P. Ganea, I. Zgura, Ş. Frunzǎ, F. Neațu, V. Pârvulescu
Layered double hydroxide (LDH) materials containing Zn ions were studied by broadband dielectric spectroscopy to follow up rotational molecular dynamics of confined water. One main relaxation process was observed in the experimental window; it was assigned to fluctuations of water molecules forming a strongly adsorbed thin layer upon the oxide surface. The temperature dependence of the relaxation rates has an unusual shape characterized by the presence of a maximum. Despite the characteristic parameters, this non-monotonous dependence is shown to be a rather general feature for water confined to LDHs.
{"title":"Layered materials of LDH-type containing Zn ions: Dielectric measurements show rotational fluctuations of water molecules","authors":"L. Frunza, P. Ganea, I. Zgura, Ş. Frunzǎ, F. Neațu, V. Pârvulescu","doi":"10.1109/SMICND.2015.7355162","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355162","url":null,"abstract":"Layered double hydroxide (LDH) materials containing Zn ions were studied by broadband dielectric spectroscopy to follow up rotational molecular dynamics of confined water. One main relaxation process was observed in the experimental window; it was assigned to fluctuations of water molecules forming a strongly adsorbed thin layer upon the oxide surface. The temperature dependence of the relaxation rates has an unusual shape characterized by the presence of a maximum. Despite the characteristic parameters, this non-monotonous dependence is shown to be a rather general feature for water confined to LDHs.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127196214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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