Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355235
Florin-Silviu Dumitru, S. Mihalache, G. Brezeanu
This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between -40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.
{"title":"A CMOS resistorless bandgap reference with minimized current consumption","authors":"Florin-Silviu Dumitru, S. Mihalache, G. Brezeanu","doi":"10.1109/SMICND.2015.7355235","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355235","url":null,"abstract":"This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between -40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"259 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133902536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355156
A. Obreja, S. Iordanescu, R. Gavrila, A. Dinescu, F. Comanescu, A. Matei, M. Danila, M. Dragoman, H. Iovu
In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandwich structure with improved EMI shielding was investigated. The composite was characterized by FTIR spectroscopy, X-ray diffraction, AFM, SEM microscopy and Raman spectroscopy. The EMI shielding effectiveness was evaluated in 8-12.5 GHz X-band frequencies for different ratio between graphene filler and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate matrix at different thickness of nanocomposite.
{"title":"Flexible films based on graphene/polymer nanocomposite with improved electromagnetic interference shielding","authors":"A. Obreja, S. Iordanescu, R. Gavrila, A. Dinescu, F. Comanescu, A. Matei, M. Danila, M. Dragoman, H. Iovu","doi":"10.1109/SMICND.2015.7355156","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355156","url":null,"abstract":"In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandwich structure with improved EMI shielding was investigated. The composite was characterized by FTIR spectroscopy, X-ray diffraction, AFM, SEM microscopy and Raman spectroscopy. The EMI shielding effectiveness was evaluated in 8-12.5 GHz X-band frequencies for different ratio between graphene filler and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate matrix at different thickness of nanocomposite.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128141767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355209
S. Bellucci, A. Sindona, D. Mencarelli, L. Pierantoni
Excitation and propagation of surfaces waves in graphene are analyzed within a frequency band of 1 to 300 THz, and a time domain of 1 to 10 ps. An ab initio approach, based on time dependent density functional theory in linear response regime is used. The key outputs of the simulation are the ab-initio conductance in time and frequency. This is shown to tend to a continuous integral relations in graphene, when the valence and conduction bands is treated within the conical approximation, in agreement with a widely used construction derived from the Kubo formula. Non-negligible differences are observed between the ab-initio and continuous methods at frequencies larger than a few tens of THz, i.e., at times shorter that 0.1ps, where the conical approximation reaches its limits of validity. The main conclusion of the study is that a novel conductivity concept is introduced, which represents a fundamental improvement with respect to some commonly used methods in electromagnetic simulations, working at THz frequencies. These tools may open the way to properly analyze graphene related materials, hethero-structures and interfaces.).
{"title":"Electrical conductivity of graphene: a time-dependent density functional theory study","authors":"S. Bellucci, A. Sindona, D. Mencarelli, L. Pierantoni","doi":"10.1109/SMICND.2015.7355209","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355209","url":null,"abstract":"Excitation and propagation of surfaces waves in graphene are analyzed within a frequency band of 1 to 300 THz, and a time domain of 1 to 10 ps. An ab initio approach, based on time dependent density functional theory in linear response regime is used. The key outputs of the simulation are the ab-initio conductance in time and frequency. This is shown to tend to a continuous integral relations in graphene, when the valence and conduction bands is treated within the conical approximation, in agreement with a widely used construction derived from the Kubo formula. Non-negligible differences are observed between the ab-initio and continuous methods at frequencies larger than a few tens of THz, i.e., at times shorter that 0.1ps, where the conical approximation reaches its limits of validity. The main conclusion of the study is that a novel conductivity concept is introduced, which represents a fundamental improvement with respect to some commonly used methods in electromagnetic simulations, working at THz frequencies. These tools may open the way to properly analyze graphene related materials, hethero-structures and interfaces.).","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129742445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355173
A. De Luca, G. Longobardi, F. Udrea
In this paper we present a novel SOI CMOS multidirectional thermoelectric flow sensor. For the first time to the best knowledge of the authors, the sensor is shown to be able to cope with harsh environment conditions, such as 150 °C ambient temperature and humidity up to 75%.
{"title":"SOI multidirectional thermoelectric flow sensor for harsh environment applications","authors":"A. De Luca, G. Longobardi, F. Udrea","doi":"10.1109/SMICND.2015.7355173","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355173","url":null,"abstract":"In this paper we present a novel SOI CMOS multidirectional thermoelectric flow sensor. For the first time to the best knowledge of the authors, the sensor is shown to be able to cope with harsh environment conditions, such as 150 °C ambient temperature and humidity up to 75%.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122643251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355169
N. Cioateră, E. Voinea, C. Radu, C. Spînu
Sm2Ti2O7 and Sm2Ti1.8Ce0.2O7 samples have been synthesized using a modified Pechini method. The evolution of structure and morphology under highly reducing atmosphere was evidenced using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy. Ceria seems to facilitate the reduction of titania, leading to the formation of orthorombic SmTiO3.
采用改进的Pechini法制备了Sm2Ti2O7和sm2ti1.8 ce0.2 2o7样品。利用x射线衍射(XRD)、拉曼光谱(Raman spectroscopy)和扫描电镜(scanning electron microscopy)对高还原气氛下结构和形貌的演变进行了表征。铈似乎促进了二氧化钛的还原，导致正构SmTiO3的形成。
{"title":"Influence of cerium dopant on pyrochlore structure evolution under highly reducing atmosphere","authors":"N. Cioateră, E. Voinea, C. Radu, C. Spînu","doi":"10.1109/SMICND.2015.7355169","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355169","url":null,"abstract":"Sm<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> and Sm<sub>2</sub>Ti<sub>1.8</sub>Ce<sub>0.2</sub>O<sub>7</sub> samples have been synthesized using a modified Pechini method. The evolution of structure and morphology under highly reducing atmosphere was evidenced using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy. Ceria seems to facilitate the reduction of titania, leading to the formation of orthorombic SmTiO<sub>3</sub>.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133970635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355203
V. Dragoi, J. Burggraf, F. Kurz, B. Rebhan
Wafer bonding is an attractive technology enabling manufacturing of complex wafer-level 3D architectures. The continuous demand for device size shrinking and performance improvement pushed for the development of new manufacturing technologies. This work reviews the main challenging raised for the wafer bonding processes and presents new developments in the aligned wafer bonding processes.
{"title":"3D integration by wafer-level aligned wafer bonding","authors":"V. Dragoi, J. Burggraf, F. Kurz, B. Rebhan","doi":"10.1109/SMICND.2015.7355203","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355203","url":null,"abstract":"Wafer bonding is an attractive technology enabling manufacturing of complex wafer-level 3D architectures. The continuous demand for device size shrinking and performance improvement pushed for the development of new manufacturing technologies. This work reviews the main challenging raised for the wafer bonding processes and presents new developments in the aligned wafer bonding processes.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115462405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355175
M. Paun, C. Falco, F. Udrea
A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.
{"title":"SOI CMOS humidity sensor based on MWCNTs/MMA composite films. On the necessary verification of fabrication stages","authors":"M. Paun, C. Falco, F. Udrea","doi":"10.1109/SMICND.2015.7355175","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355175","url":null,"abstract":"A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128007276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355204
N. Patache, L. Goras
A class of linear continuous in time and discrete in space homogeneous Cellular Neural Network (CNN) type analog parallel architecture and a 16 cells 1D CMOS implementation are discussed. The effect of charge injection is analyzed and experimental results for a low pass and stop band configuration are presented and compared to simulations.
{"title":"On the dynamics of a 1D Cellular Neural Network","authors":"N. Patache, L. Goras","doi":"10.1109/SMICND.2015.7355204","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355204","url":null,"abstract":"A class of linear continuous in time and discrete in space homogeneous Cellular Neural Network (CNN) type analog parallel architecture and a 16 cells 1D CMOS implementation are discussed. The effect of charge injection is analyzed and experimental results for a low pass and stop band configuration are presented and compared to simulations.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134223546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-01DOI: 10.1109/SMICND.2015.7355237
Nicusor Bortun, Matei Nicolae Stan, G. Brezeanu
This paper presents a chopper amplifier for precision current sensing, capable of handling common mode input voltages outside the supply rails. For high common mode rejection ratio (CMRR) and DC gain, the amplifier employs a three-stage topology with nested-Miller frequency compensation. By using the chopping technique, a referred to input offset voltage of ±90μV is obtained. To reduce the output ripples caused by the chopping technique the amplifier employs a notch filter. A CMRR of 123dB has been obtained, considering a supply voltage of 5V, for a common mode input voltage range from 4V to 80V. The stability of the operational amplifier (OA) is ensured for a minimum closed loop gain of 20V/V.
{"title":"High precision bidirectional chopper amplifier with extended common mode input voltage range","authors":"Nicusor Bortun, Matei Nicolae Stan, G. Brezeanu","doi":"10.1109/SMICND.2015.7355237","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355237","url":null,"abstract":"This paper presents a chopper amplifier for precision current sensing, capable of handling common mode input voltages outside the supply rails. For high common mode rejection ratio (CMRR) and DC gain, the amplifier employs a three-stage topology with nested-Miller frequency compensation. By using the chopping technique, a referred to input offset voltage of ±90μV is obtained. To reduce the output ripples caused by the chopping technique the amplifier employs a notch filter. A CMRR of 123dB has been obtained, considering a supply voltage of 5V, for a common mode input voltage range from 4V to 80V. The stability of the operational amplifier (OA) is ensured for a minimum closed loop gain of 20V/V.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129383747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A circuit topology for a fixed frequency oscillator based on Composite-/Right-/Left-Handed distributed amplifier is proposed. For this topology, it is demonstrated that each transistor contributes equally to the output power. The oscillation condition is introduced, too. The oscillator has been designed and fabricated for a frequency of oscillation equal to 2.8GHz. The experimental and simulated results are in good agreement.
{"title":"Distributed oscillator based on Composite Right-/Left-Handed unit cells","authors":"S. Simion, G. Bartolucci","doi":"10.1063/1.4930580","DOIUrl":"https://doi.org/10.1063/1.4930580","url":null,"abstract":"A circuit topology for a fixed frequency oscillator based on Composite-/Right-/Left-Handed distributed amplifier is proposed. For this topology, it is demonstrated that each transistor contributes equally to the output power. The oscillation condition is introduced, too. The oscillator has been designed and fabricated for a frequency of oscillation equal to 2.8GHz. The experimental and simulated results are in good agreement.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114346271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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