Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571594
D. Campi, C. Coriasso, L. Faustini, C. Cacciatore, C. Rigo, A. Stano
This contribution focuses on optically-controlled switching devices that have the potential of operating at rates greater than 40 Gb/s, that is beyond the limits of electronics components. These devices would be useful for ultrafast serial processing: applications include routing and time-domain demultiplexing in telecommunications transmission networks as well as local area networks, providing key functions where the system bottleneck is set by the bandwidth of a few critical components. All-optical time-domain switching and routing is a natural complement to wavelength switching in offering massive transport capability: therefore, it would be advisable that optically-controlled technologies be compatible with wavelength switching implementations. The discussion here is restricted to nonlinear, guided-wave, passive devices based on semiconductors, and, specifically, on semiconductor quantum wells (SQWs).
{"title":"All-optical waveguide devices based on multiple quantum wells","authors":"D. Campi, C. Coriasso, L. Faustini, C. Cacciatore, C. Rigo, A. Stano","doi":"10.1109/LEOS.1996.571594","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571594","url":null,"abstract":"This contribution focuses on optically-controlled switching devices that have the potential of operating at rates greater than 40 Gb/s, that is beyond the limits of electronics components. These devices would be useful for ultrafast serial processing: applications include routing and time-domain demultiplexing in telecommunications transmission networks as well as local area networks, providing key functions where the system bottleneck is set by the bandwidth of a few critical components. All-optical time-domain switching and routing is a natural complement to wavelength switching in offering massive transport capability: therefore, it would be advisable that optically-controlled technologies be compatible with wavelength switching implementations. The discussion here is restricted to nonlinear, guided-wave, passive devices based on semiconductors, and, specifically, on semiconductor quantum wells (SQWs).","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131867449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571540
A. Janssen
Performance and cost demands on future optoelectronic components are likely to continue in the foreseeable future as fibre networks are increasingly deployed. To meet these demands, new materials and manufacturing methods need to evolve from components which are designed to be fully hermetic to meet the system reliability requirements or which require precision manual optical alignment as part of the manufacturing process. The advent of WDM systems and optical switching will also require packaging of multi-fibre (ribboned) components.
{"title":"Packaging technologies for optoelectronics in the new millennium","authors":"A. Janssen","doi":"10.1109/LEOS.1996.571540","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571540","url":null,"abstract":"Performance and cost demands on future optoelectronic components are likely to continue in the foreseeable future as fibre networks are increasingly deployed. To meet these demands, new materials and manufacturing methods need to evolve from components which are designed to be fully hermetic to meet the system reliability requirements or which require precision manual optical alignment as part of the manufacturing process. The advent of WDM systems and optical switching will also require packaging of multi-fibre (ribboned) components.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132237369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571692
S. Chatterji, M. Fleury, M. Muendel, W. Hodge, P. Hagelstein
We have sought ways to improve the coupling of the pump laser energy to a low density plasma suitable for collisional XUV lasing. At very high intensity, laser light can be coupled directly to a low density gas through multiphoton ionization. At the intensities of our pump, the radiation must be absorbed by inverse bremsstrahlung, which is inefficient at low density. To improve the overall efficiency, an optic was designed which integrates an axicon and a reflective tube such that unabsorbed pump radiation is repeatedly refocused on axis, permitting the creation of extended line foci in gases. Experimentally it was found that 6 cm sparks could be created in 200-760 torr argon with very high pump absorption, particularly on a second, delayed pulse. To investigate the coupling of pump laser energy into the plasma column, and subsequent plasma development, a computational model has been developed. Initial plasma formation occurs as a result of multiphoton ionization. Subsequent heating of the plasma occurs by inverse bremsstrahlung absorption, while higher stages of ionization are obtained through collisional ionization. A one-dimensional three-fluid hydrodynamic model, which incorporates collisions between charged particles and neutral atoms, is used to predict plasma expansion into the surrounding gas, while the coupling of absorbed energy to the plasma front is modeled by flux-limited electron thermal conduction.
{"title":"A model for plasma formation in a reflective axicon and tube for a proposed Ne-like argon laser at 46.9 nm","authors":"S. Chatterji, M. Fleury, M. Muendel, W. Hodge, P. Hagelstein","doi":"10.1109/LEOS.1996.571692","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571692","url":null,"abstract":"We have sought ways to improve the coupling of the pump laser energy to a low density plasma suitable for collisional XUV lasing. At very high intensity, laser light can be coupled directly to a low density gas through multiphoton ionization. At the intensities of our pump, the radiation must be absorbed by inverse bremsstrahlung, which is inefficient at low density. To improve the overall efficiency, an optic was designed which integrates an axicon and a reflective tube such that unabsorbed pump radiation is repeatedly refocused on axis, permitting the creation of extended line foci in gases. Experimentally it was found that 6 cm sparks could be created in 200-760 torr argon with very high pump absorption, particularly on a second, delayed pulse. To investigate the coupling of pump laser energy into the plasma column, and subsequent plasma development, a computational model has been developed. Initial plasma formation occurs as a result of multiphoton ionization. Subsequent heating of the plasma occurs by inverse bremsstrahlung absorption, while higher stages of ionization are obtained through collisional ionization. A one-dimensional three-fluid hydrodynamic model, which incorporates collisions between charged particles and neutral atoms, is used to predict plasma expansion into the surrounding gas, while the coupling of absorbed energy to the plasma front is modeled by flux-limited electron thermal conduction.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124708937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571914
S. Yoo
Wafer-bonding is an effective method of realizing a domain altered waveguide for nonlinear optical applications. Wavelength conversion by quasi-phase-matched difference frequency generation (DFG) in a wafer-bonded AlGaAs waveguide has been demonstrated. The wide conversion bandwidth (/spl sim/90 nm), polarization diversified operation, and polarization independent conversion efficiency indicate its potential for WDM network applications. Spectral inversion and linear conversion properties also imply its capability to accommodate all signal formats and protocols including analog and frequency modulation. A significant improvement in the conversion efficiency is expected from reduction of scattering losses by improved OMCVD growth and fabrication processes.
{"title":"Nonlinear optical devices for WDM system applications realized by wafer-bonding","authors":"S. Yoo","doi":"10.1109/LEOS.1996.571914","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571914","url":null,"abstract":"Wafer-bonding is an effective method of realizing a domain altered waveguide for nonlinear optical applications. Wavelength conversion by quasi-phase-matched difference frequency generation (DFG) in a wafer-bonded AlGaAs waveguide has been demonstrated. The wide conversion bandwidth (/spl sim/90 nm), polarization diversified operation, and polarization independent conversion efficiency indicate its potential for WDM network applications. Spectral inversion and linear conversion properties also imply its capability to accommodate all signal formats and protocols including analog and frequency modulation. A significant improvement in the conversion efficiency is expected from reduction of scattering losses by improved OMCVD growth and fabrication processes.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134477708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565282
J. Joseph, F. Aranda, D. Rao, J. Akkara, M. Nakashima
We have successfully demonstrated a real-time, self-adaptive optical image processing system using the photoinduced dichroic characteristics of a bacteriorhodopsin film. The advantages of the system are simplicity in operation with no alignment required at the Fourier plane to perform the processing, no vibration isolation systems are required and even a coherent source is not a requirement to perform the experiment.
{"title":"An optical processing system using photoanisotropy in a bacteriorhodopsin film","authors":"J. Joseph, F. Aranda, D. Rao, J. Akkara, M. Nakashima","doi":"10.1109/LEOS.1996.565282","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565282","url":null,"abstract":"We have successfully demonstrated a real-time, self-adaptive optical image processing system using the photoinduced dichroic characteristics of a bacteriorhodopsin film. The advantages of the system are simplicity in operation with no alignment required at the Fourier plane to perform the processing, no vibration isolation systems are required and even a coherent source is not a requirement to perform the experiment.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"21 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132236682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571573
S. Lindgren, H. Åhlfeldt, B. Kerzar, O. Kjebon
In summary, flip-chip provides a mounting scheme with excellent electrical and thermal properties for high-speed laser diodes. In addition, it is compatible with passive alignment to fibres, thus making it attractive for low-cost packaging of transmitter modules.
{"title":"Flip-chip bonding of high-speed laser diodes","authors":"S. Lindgren, H. Åhlfeldt, B. Kerzar, O. Kjebon","doi":"10.1109/LEOS.1996.571573","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571573","url":null,"abstract":"In summary, flip-chip provides a mounting scheme with excellent electrical and thermal properties for high-speed laser diodes. In addition, it is compatible with passive alignment to fibres, thus making it attractive for low-cost packaging of transmitter modules.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131875621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565091
R. Alferness
Summary form only given. Optical fiber transmission systems, that historically have enjoyed phenomenal growth, are currently being revolutionized by optical amplifier and wavelength-division-multiplexing technology that enable optical networks. The evolution of optical networks promises to expand the reach and functionality of photonics while meeting society's insatiable desire for reliable, cost-effective higher capacity communication.
{"title":"The evolution of photonic networks","authors":"R. Alferness","doi":"10.1109/LEOS.1996.565091","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565091","url":null,"abstract":"Summary form only given. Optical fiber transmission systems, that historically have enjoyed phenomenal growth, are currently being revolutionized by optical amplifier and wavelength-division-multiplexing technology that enable optical networks. The evolution of optical networks promises to expand the reach and functionality of photonics while meeting society's insatiable desire for reliable, cost-effective higher capacity communication.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132975503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565207
P. Tayebati, C. Hantzis, R. Sacks
Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.
{"title":"Monolithic p-i-n GaAlAs photorefractive devices","authors":"P. Tayebati, C. Hantzis, R. Sacks","doi":"10.1109/LEOS.1996.565207","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565207","url":null,"abstract":"Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132771796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565093
J. Parrish
Summary form only given. Medical practice is being rapidly redefined by market forces on one side and new technologies on the other. The shift from inpatient to outpatient surgery is a good example of this. Advances in procedural medicine will be built upon the core technologies of high speed computing, robotics, systems engineering, lasers, optics, imaging and biomedical engineering. These technologies cut across traditional disciplines and have the possibilities of making medical care better, safer and less expensive.
{"title":"Lasers and electro-optics in the health care of the future","authors":"J. Parrish","doi":"10.1109/LEOS.1996.565093","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565093","url":null,"abstract":"Summary form only given. Medical practice is being rapidly redefined by market forces on one side and new technologies on the other. The shift from inpatient to outpatient surgery is a good example of this. Advances in procedural medicine will be built upon the core technologies of high speed computing, robotics, systems engineering, lasers, optics, imaging and biomedical engineering. These technologies cut across traditional disciplines and have the possibilities of making medical care better, safer and less expensive.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133649134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565110
A. Richter, C. Lienau, J. Tomm, T. Elsaesser
Optical near-field spectroscopy and related methods display a rapid development as powerful new analytical tools for the investigation of optoelectronic devices such as, e.g., semiconductor lasers. Photocurrent spectroscopy, belonging to the traditional methods of semiconductor physics, gained an entirely new range of application by employing an optical near-field microscope as the optical excitation source. Thus near-field optical beam induced current (NOBIC) spectroscopy has been developed. It combines the spatial resolution of less than some 100 nm of electron beam based techniques such as electron beam induced current (EBIC) with the advantages of providing selective excitation of the laser structure if a tunable wavelength excitation source is used and being completely non-destructive. Here, a NOBIC study of different GaAs-AlGaAs high power diode laser array structures such as double quantum well (DQW) graded index separate confinement heterostructures as well as step index AlGaAs structures is presented.
{"title":"Optical near-field photocurrent spectroscopy as a new tool for analyzing optoelectronic devices","authors":"A. Richter, C. Lienau, J. Tomm, T. Elsaesser","doi":"10.1109/LEOS.1996.565110","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565110","url":null,"abstract":"Optical near-field spectroscopy and related methods display a rapid development as powerful new analytical tools for the investigation of optoelectronic devices such as, e.g., semiconductor lasers. Photocurrent spectroscopy, belonging to the traditional methods of semiconductor physics, gained an entirely new range of application by employing an optical near-field microscope as the optical excitation source. Thus near-field optical beam induced current (NOBIC) spectroscopy has been developed. It combines the spatial resolution of less than some 100 nm of electron beam based techniques such as electron beam induced current (EBIC) with the advantages of providing selective excitation of the laser structure if a tunable wavelength excitation source is used and being completely non-destructive. Here, a NOBIC study of different GaAs-AlGaAs high power diode laser array structures such as double quantum well (DQW) graded index separate confinement heterostructures as well as step index AlGaAs structures is presented.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122429583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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