Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565103
Chinlon Lin, K. Ho, Hongxing Dai
We discuss systems considerations for the use of 1550 nm-based hybrid multiwavelength WDM systems operating at high-speed (2.5 and 10 Gb/s) per channel for high-capacity digital video trunking in which the digital optical channels are operating at different bit rates or carrying different digital signal formats.
{"title":"Hybrid WDM systems for video trunking applications","authors":"Chinlon Lin, K. Ho, Hongxing Dai","doi":"10.1109/LEOS.1996.565103","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565103","url":null,"abstract":"We discuss systems considerations for the use of 1550 nm-based hybrid multiwavelength WDM systems operating at high-speed (2.5 and 10 Gb/s) per channel for high-capacity digital video trunking in which the digital optical channels are operating at different bit rates or carrying different digital signal formats.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122615822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571522
J. Verdiell, M. Ziari, A. Mathur
Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.
{"title":"Semiconductor optical amplifiers","authors":"J. Verdiell, M. Ziari, A. Mathur","doi":"10.1109/LEOS.1996.571522","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571522","url":null,"abstract":"Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123920648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565105
T. Lee, C. Zah, S. Yoo, R. Bhat, C. Caneau
In this talk, we will discuss in detail the multiwavelength DFB laser array technologies, and the all-optical wavelength converter technologies. Two types of DFB laser arrays have been developed for the MONET wavelength add-drop multiplexers (WADM) and wavelength terminal multiplexers (WTM). Laser arrays are to be incorporated in the MONET WADM network and WTM networks. Amongst various proposed wavelength conversion techniques, we have investigated the parametric wavelength converter for difference frequency generation in a nonlinear waveguide. The unique feature of the parametric wavelength converter is that it can convert all wavelength simultaneously as it has been demonstrated recently.
{"title":"Enabling optoelectronic technologies for optical networking","authors":"T. Lee, C. Zah, S. Yoo, R. Bhat, C. Caneau","doi":"10.1109/LEOS.1996.565105","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565105","url":null,"abstract":"In this talk, we will discuss in detail the multiwavelength DFB laser array technologies, and the all-optical wavelength converter technologies. Two types of DFB laser arrays have been developed for the MONET wavelength add-drop multiplexers (WADM) and wavelength terminal multiplexers (WTM). Laser arrays are to be incorporated in the MONET WADM network and WTM networks. Amongst various proposed wavelength conversion techniques, we have investigated the parametric wavelength converter for difference frequency generation in a nonlinear waveguide. The unique feature of the parametric wavelength converter is that it can convert all wavelength simultaneously as it has been demonstrated recently.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130055065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565256
M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, M. Okai
Summary form only given. We have succeeded in continuous wave (CW) operation of a GaInNAs single active layer QW laser diode at room temperature, for the first time. The use of GaInNAs greatly improved the high temperature performance of long-wavelength-range laser diodes. Thus, the applicatability of GaInNAs, which is a novel material for laser diodes used in optical-fiber communications, was demonstrated.
{"title":"Continuous wave operation of GaInNAs laser diode at room temperature","authors":"M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, M. Okai","doi":"10.1109/LEOS.1996.565256","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565256","url":null,"abstract":"Summary form only given. We have succeeded in continuous wave (CW) operation of a GaInNAs single active layer QW laser diode at room temperature, for the first time. The use of GaInNAs greatly improved the high temperature performance of long-wavelength-range laser diodes. Thus, the applicatability of GaInNAs, which is a novel material for laser diodes used in optical-fiber communications, was demonstrated.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116197996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571637
M. Hu, J.Z. Huang, R. Scarmozzino, M. Levy, R. Osgood
In this paper, we report a new approach to a GaAs-AlGaAs TE/TM beam splitter which permits operation in the III-V materials system. Since III-V semiconductors do not show intrinsic material birefringence, our device is based on the birefringence induced by the electro-optical effect. Specifically, the device utilizes the large difference in propagation constants of the first-higher-order TE mode (TE/sub 01/) and the fundamental TM mode (TM/sub 00/) in the mode-sorting Y-branch.
{"title":"Electronically tunable Mach-Zehnder polarization splitter","authors":"M. Hu, J.Z. Huang, R. Scarmozzino, M. Levy, R. Osgood","doi":"10.1109/LEOS.1996.571637","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571637","url":null,"abstract":"In this paper, we report a new approach to a GaAs-AlGaAs TE/TM beam splitter which permits operation in the III-V materials system. Since III-V semiconductors do not show intrinsic material birefringence, our device is based on the birefringence induced by the electro-optical effect. Specifically, the device utilizes the large difference in propagation constants of the first-higher-order TE mode (TE/sub 01/) and the fundamental TM mode (TM/sub 00/) in the mode-sorting Y-branch.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116210304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565110
A. Richter, C. Lienau, J. Tomm, T. Elsaesser
Optical near-field spectroscopy and related methods display a rapid development as powerful new analytical tools for the investigation of optoelectronic devices such as, e.g., semiconductor lasers. Photocurrent spectroscopy, belonging to the traditional methods of semiconductor physics, gained an entirely new range of application by employing an optical near-field microscope as the optical excitation source. Thus near-field optical beam induced current (NOBIC) spectroscopy has been developed. It combines the spatial resolution of less than some 100 nm of electron beam based techniques such as electron beam induced current (EBIC) with the advantages of providing selective excitation of the laser structure if a tunable wavelength excitation source is used and being completely non-destructive. Here, a NOBIC study of different GaAs-AlGaAs high power diode laser array structures such as double quantum well (DQW) graded index separate confinement heterostructures as well as step index AlGaAs structures is presented.
{"title":"Optical near-field photocurrent spectroscopy as a new tool for analyzing optoelectronic devices","authors":"A. Richter, C. Lienau, J. Tomm, T. Elsaesser","doi":"10.1109/LEOS.1996.565110","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565110","url":null,"abstract":"Optical near-field spectroscopy and related methods display a rapid development as powerful new analytical tools for the investigation of optoelectronic devices such as, e.g., semiconductor lasers. Photocurrent spectroscopy, belonging to the traditional methods of semiconductor physics, gained an entirely new range of application by employing an optical near-field microscope as the optical excitation source. Thus near-field optical beam induced current (NOBIC) spectroscopy has been developed. It combines the spatial resolution of less than some 100 nm of electron beam based techniques such as electron beam induced current (EBIC) with the advantages of providing selective excitation of the laser structure if a tunable wavelength excitation source is used and being completely non-destructive. Here, a NOBIC study of different GaAs-AlGaAs high power diode laser array structures such as double quantum well (DQW) graded index separate confinement heterostructures as well as step index AlGaAs structures is presented.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122429583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571795
G. Castañón, O. Tonguz, A. Bononi
BER performance of multi-hop transparent optical networks in uniform traffic under hot-potato, single-buffer deflection routing schemes is presented. Device-induced crosstalk and ASE noise, limit the characteristics of the network, such as propagation distance, sustainable traffic, and bit-rate.
{"title":"Impact of crosstalk on the performance of multi-wavelength optical cross-connected networks using deflection routing","authors":"G. Castañón, O. Tonguz, A. Bononi","doi":"10.1109/LEOS.1996.571795","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571795","url":null,"abstract":"BER performance of multi-hop transparent optical networks in uniform traffic under hot-potato, single-buffer deflection routing schemes is presented. Device-induced crosstalk and ASE noise, limit the characteristics of the network, such as propagation distance, sustainable traffic, and bit-rate.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121104493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571951
A. Smirl, E. Towe
The author discusses their progress in investigating the influences of crystallographic orientation and of strain on the nonlinear and electro-optical properties of III-V semiconductor compounds, and they present examples of how these orientation-dependent properties can be used to design novel optical devices.
{"title":"The effects of strain and crystallographic orientation on nonlinearities in quantum well devices","authors":"A. Smirl, E. Towe","doi":"10.1109/LEOS.1996.571951","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571951","url":null,"abstract":"The author discusses their progress in investigating the influences of crystallographic orientation and of strain on the nonlinear and electro-optical properties of III-V semiconductor compounds, and they present examples of how these orientation-dependent properties can be used to design novel optical devices.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116512758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571878
C.A. Udelson, R. B. Hooker
Current particle measurement devices for use in applications such as clean-room air monitoring systems utilize a He-Ne laser as the pump source for an external resonant measurement cavity. Strides toward future development of particle measurement instrumentation aim to reduce cost and device size, thus making laser diodes a favorable choice. Laser diodes, however, exhibit several characteristic properties which must be addressed in order to achieve stable operation. We have devised and tested a simple cost efficient technique to ensure accurate particle measurement without the cost or bulk associated with laser stability instrumentation. We have investigated the power stability of a laser diode pumped external resonant cavity optical setup. We propose that the described system can be used for particle measurement applications by using the detected cavity output power as a trigger signal for a second detector, used to measure scattered light from particles pumped through the laser beam.
{"title":"Design and characterization of a laser diode pumped external cavity for particle measurement applications","authors":"C.A. Udelson, R. B. Hooker","doi":"10.1109/LEOS.1996.571878","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571878","url":null,"abstract":"Current particle measurement devices for use in applications such as clean-room air monitoring systems utilize a He-Ne laser as the pump source for an external resonant measurement cavity. Strides toward future development of particle measurement instrumentation aim to reduce cost and device size, thus making laser diodes a favorable choice. Laser diodes, however, exhibit several characteristic properties which must be addressed in order to achieve stable operation. We have devised and tested a simple cost efficient technique to ensure accurate particle measurement without the cost or bulk associated with laser stability instrumentation. We have investigated the power stability of a laser diode pumped external resonant cavity optical setup. We propose that the described system can be used for particle measurement applications by using the detected cavity output power as a trigger signal for a second detector, used to measure scattered light from particles pumped through the laser beam.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127134721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571649
P. Helm, M. Dagenais, M. Krainak, R. Leavitt
High-sensitivity, high-speed optical receivers are important components for both high-bit rate and microwave modulated optical systems. Optically preamplified receivers circumvent the gain-bandwidth limitation of APD receivers and have demonstrated improved receiver sensitivity in optical fiber systems at data rates up to 10 Gbit/s. In order to obtain maximum sensitivity, an optically preamplified receiver must be optical amplifier noise limited rather than thermal noise limited. Operation in this regime is more difficult to achieve at higher frequencies, however, due to reduced detector quantum efficiency and higher electronic receiver noise. We demonstrate an optically preamplified receiver comprised of a semiconductor optical amplifier (SOA) and 25 GHz Schottky InGaAs photodiode operating at the SOA noise limit. Because of the broadband, low-responsivity of this photodiode, these results apply over its entire spectral range (400-1600 nm), subject to SOA availability, as well as to operation at frequencies up to 120 GHz.
{"title":"High-sensitivity semiconductor optically preamplified 25 GHz receiver","authors":"P. Helm, M. Dagenais, M. Krainak, R. Leavitt","doi":"10.1109/LEOS.1996.571649","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571649","url":null,"abstract":"High-sensitivity, high-speed optical receivers are important components for both high-bit rate and microwave modulated optical systems. Optically preamplified receivers circumvent the gain-bandwidth limitation of APD receivers and have demonstrated improved receiver sensitivity in optical fiber systems at data rates up to 10 Gbit/s. In order to obtain maximum sensitivity, an optically preamplified receiver must be optical amplifier noise limited rather than thermal noise limited. Operation in this regime is more difficult to achieve at higher frequencies, however, due to reduced detector quantum efficiency and higher electronic receiver noise. We demonstrate an optically preamplified receiver comprised of a semiconductor optical amplifier (SOA) and 25 GHz Schottky InGaAs photodiode operating at the SOA noise limit. Because of the broadband, low-responsivity of this photodiode, these results apply over its entire spectral range (400-1600 nm), subject to SOA availability, as well as to operation at frequencies up to 120 GHz.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125823407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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