The author reports on a GaAs monolithic microwave integrated circuit (MMIC) for a six-chip successive detection logarithmic amplifier (SDLA) which operates over the frequency band of 2 to 7 GHz with a logging error within +or-1.25 dB over a 54-dB dynamic range. This is very close to the theoretical value of +or-1.1 dB for a 9-dB stage gain. The results represent the best published figures and lowest chip count per stage for both hybrid MIC and MMIC realizations of an SDLA above 2 GHz. A summary of the measured performance of the module at 31 degrees C is given.<>
{"title":"A GaAs MMIC for a 2-7 GHz successive detection logarithmic amplifier","authors":"L. Chua","doi":"10.1109/MCS.1992.186021","DOIUrl":"https://doi.org/10.1109/MCS.1992.186021","url":null,"abstract":"The author reports on a GaAs monolithic microwave integrated circuit (MMIC) for a six-chip successive detection logarithmic amplifier (SDLA) which operates over the frequency band of 2 to 7 GHz with a logging error within +or-1.25 dB over a 54-dB dynamic range. This is very close to the theoretical value of +or-1.1 dB for a 9-dB stage gain. The results represent the best published figures and lowest chip count per stage for both hybrid MIC and MMIC realizations of an SDLA above 2 GHz. A summary of the measured performance of the module at 31 degrees C is given.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132997916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A six-stage successive detection logarithmic amplifier is described in which each stage is a GaAs monolithic microwave integrated circuit (MMIC) incorporating RF amplification, detection, and a novel video summation technique, using standard 0.5- mu m process field effect transistors (FETs) and Schottky diodes. The circuit had a dynamic range of 80 dB at 3.8 GHz with linearity of +or-1 dB and power dissipation of 4.0 W. RF and video processing have been incorporated on a single die. Pulse performance and other parameters are summarized.<>
{"title":"A GaAs MMIC based successive detection logarithmic amplifier","authors":"D.J. Nelly, D. Parsons","doi":"10.1109/MCS.1992.186022","DOIUrl":"https://doi.org/10.1109/MCS.1992.186022","url":null,"abstract":"A six-stage successive detection logarithmic amplifier is described in which each stage is a GaAs monolithic microwave integrated circuit (MMIC) incorporating RF amplification, detection, and a novel video summation technique, using standard 0.5- mu m process field effect transistors (FETs) and Schottky diodes. The circuit had a dynamic range of 80 dB at 3.8 GHz with linearity of +or-1 dB and power dissipation of 4.0 W. RF and video processing have been incorporated on a single die. Pulse performance and other parameters are summarized.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123875163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Tieman, A. P. de Hek, F.L.M. van den Bogaart, W.M.A. van Hoek
The design, fabrication, performance, and production results of a GaAs monolithic phase shifter, based on a vector modulator principle, are described. The device exhibited a typical root-mean-square (RMS) phase error of about 3 degrees and an RMS amplitude error of less than 0.30 dB across the frequency band of 7.0-10.5 GHz and over a linear controllable gain range of 15 dB. Typical insertion gain was 0 dB, input return losses were better than 15 dB and output return losses were better than 10 dB. The device is intended for application in a wideband active phased-array antenna. The analog control of the device allows the correction of the systematic phase errors and amplitude errors. Tests have demonstrated that through phase correction the RMS phase error was reduced to less than 0.7 degrees while the RMS amplitude error was still less than 0.30 dB.<>
{"title":"A single chip X-band phase shifter with 6 bit uncorrected phase resolution and more than 8 bit corrected phase resolution","authors":"T. Tieman, A. P. de Hek, F.L.M. van den Bogaart, W.M.A. van Hoek","doi":"10.1109/MCS.1992.186019","DOIUrl":"https://doi.org/10.1109/MCS.1992.186019","url":null,"abstract":"The design, fabrication, performance, and production results of a GaAs monolithic phase shifter, based on a vector modulator principle, are described. The device exhibited a typical root-mean-square (RMS) phase error of about 3 degrees and an RMS amplitude error of less than 0.30 dB across the frequency band of 7.0-10.5 GHz and over a linear controllable gain range of 15 dB. Typical insertion gain was 0 dB, input return losses were better than 15 dB and output return losses were better than 10 dB. The device is intended for application in a wideband active phased-array antenna. The analog control of the device allows the correction of the systematic phase errors and amplitude errors. Tests have demonstrated that through phase correction the RMS phase error was reduced to less than 0.7 degrees while the RMS amplitude error was still less than 0.30 dB.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127501860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A high-performance 6-18-GHz dual-channel monolithic microwave integrated circuit (MMIC) transmit/receive (T/R) module is presented with significant advances in integration and performance. This advanced module featured critical spacing for two-dimensional arrays, an aluminum silicon carbide housing, multilayer ceramic substrates for RF and control circuitry, a custom hermetic DC multipin connector, new high-performance MMIC low-noise amplifiers and power amplifiers, and specialized multifunction MMIC chips for a reduced parts count. Each of the two channels featured a selectable horizontal and vertical polarization capability. The module was very densely packaged with two complete T/R channels occupying 0.97 in/sup 3/. The module's nominal noise figure was below 8.0 dB over most of the band, the output power was 26 dBm, and both the measured transmit and receive gains were 20 dB.<>
{"title":"Advanced MMIC T/R module for 6 to 18 GHz multifunction arrays","authors":"J. Bugeau, W. Coughlin, M. Priolo, G. St. Onge","doi":"10.1109/MCS.1992.186014","DOIUrl":"https://doi.org/10.1109/MCS.1992.186014","url":null,"abstract":"A high-performance 6-18-GHz dual-channel monolithic microwave integrated circuit (MMIC) transmit/receive (T/R) module is presented with significant advances in integration and performance. This advanced module featured critical spacing for two-dimensional arrays, an aluminum silicon carbide housing, multilayer ceramic substrates for RF and control circuitry, a custom hermetic DC multipin connector, new high-performance MMIC low-noise amplifiers and power amplifiers, and specialized multifunction MMIC chips for a reduced parts count. Each of the two channels featured a selectable horizontal and vertical polarization capability. The module was very densely packaged with two complete T/R channels occupying 0.97 in/sup 3/. The module's nominal noise figure was below 8.0 dB over most of the band, the output power was 26 dBm, and both the measured transmit and receive gains were 20 dB.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114351619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Miyashita, K. Maemura, K. Yamamoto, T. Shimura, M. Nogami, K. Motoshima, T. Kitayama, Y. Mitsui
An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<>
{"title":"An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system","authors":"M. Miyashita, K. Maemura, K. Yamamoto, T. Shimura, M. Nogami, K. Motoshima, T. Kitayama, Y. Mitsui","doi":"10.1109/MCS.1992.186016","DOIUrl":"https://doi.org/10.1109/MCS.1992.186016","url":null,"abstract":"An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129182461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez
The design, implementation, and test results of a simple GaAs MMIC transimpedance amplifier with enhanced performance for high-speed optical communications is described. A cascode configuration, improved in terms of bandwidth and noise, was used. On-wafer and on-carrier measurements showed close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption were obtained. The temperature and bias point sensitivity were negligible. The electrical results were very close to the theoretical limits of the structure.<>
{"title":"An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications","authors":"J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez","doi":"10.1109/MCS.1992.186015","DOIUrl":"https://doi.org/10.1109/MCS.1992.186015","url":null,"abstract":"The design, implementation, and test results of a simple GaAs MMIC transimpedance amplifier with enhanced performance for high-speed optical communications is described. A cascode configuration, improved in terms of bandwidth and noise, was used. On-wafer and on-carrier measurements showed close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption were obtained. The temperature and bias point sensitivity were negligible. The electrical results were very close to the theoretical limits of the structure.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131752115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A fully integrated GaAs monolithic image rejection downconverter for L/S-band operation is presented. All the necessary subcircuits, such as the RF splitter, the local oscillator (LO) phase shifter, two mixers, and its biasing circuits, were included inside a GaAs chip. Only an IF hybrid was needed as an external component. Experimental results verified the good operation of the device, showing more than 20 dB of image rejection, 8-dB gain conversion, 30-dB LO-to-IF isolation, and 20-dB LO-to-RF isolation throughout the operating band. The monolithic microwave integrated circuit (MMIC) contained 18 MESFETs and 40 passive components in a 1.2-mm*3-mm area.<>
{"title":"GaAs monolithic image rejection down-converter for point-to-multipoint communication systems","authors":"G.L. Bonato, A. Boveda","doi":"10.1109/MCS.1992.186017","DOIUrl":"https://doi.org/10.1109/MCS.1992.186017","url":null,"abstract":"A fully integrated GaAs monolithic image rejection downconverter for L/S-band operation is presented. All the necessary subcircuits, such as the RF splitter, the local oscillator (LO) phase shifter, two mixers, and its biasing circuits, were included inside a GaAs chip. Only an IF hybrid was needed as an external component. Experimental results verified the good operation of the device, showing more than 20 dB of image rejection, 8-dB gain conversion, 30-dB LO-to-IF isolation, and 20-dB LO-to-RF isolation throughout the operating band. The monolithic microwave integrated circuit (MMIC) contained 18 MESFETs and 40 passive components in a 1.2-mm*3-mm area.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127173704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel active unilateral four-port junction operating over 1 to 20 GHz has been demonstrated in monolithic microwave integrated circuit (MMIC) technology, using distributed amplifier techniques. The circuit is capable of covering an extremely wide frequency range. This prototype had insertion losses of approximately 5 dB and excellent port-to-port isolation. One of the key advantages of this active technique, compared to conventional circulators and directional couplers, is that the low-frequency cutoff is limited only by the design of the bias networks.<>
{"title":"Novel monolithic ultra-wideband unilateral 4-port junction using distributed amplification techniques,","authors":"I. Robertson, A. Aghvami","doi":"10.1109/MCS.1992.186032","DOIUrl":"https://doi.org/10.1109/MCS.1992.186032","url":null,"abstract":"A novel active unilateral four-port junction operating over 1 to 20 GHz has been demonstrated in monolithic microwave integrated circuit (MMIC) technology, using distributed amplifier techniques. The circuit is capable of covering an extremely wide frequency range. This prototype had insertion losses of approximately 5 dB and excellent port-to-port isolation. One of the key advantages of this active technique, compared to conventional circulators and directional couplers, is that the low-frequency cutoff is limited only by the design of the bias networks.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121980904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel circuit topology is discussed for the design a 180 degrees phase shifter. The approach exploited the dual nature of the tee and pi configurations of the lowpass and highpass filter topologies. The resulting configuration required fewer elements than conventional switched filter approaches and did not require complementary control voltages. It has been realized by using MESFETs. When the switching elements are in the low-impedance state, the circuit becomes a highpass pi network. In the high-impedance state, the network forms a lowpass tee network. This topology requires only a single control signal halving the complexity of the switch driver. Additionally, the number of phase shifting components is reduced to only two inductors and two capacitors.<>
{"title":"A novel design for a MMIC 180 degree phase shifter","authors":"M. Goldfarb","doi":"10.1109/MCS.1992.186020","DOIUrl":"https://doi.org/10.1109/MCS.1992.186020","url":null,"abstract":"A novel circuit topology is discussed for the design a 180 degrees phase shifter. The approach exploited the dual nature of the tee and pi configurations of the lowpass and highpass filter topologies. The resulting configuration required fewer elements than conventional switched filter approaches and did not require complementary control voltages. It has been realized by using MESFETs. When the switching elements are in the low-impedance state, the circuit becomes a highpass pi network. In the high-impedance state, the network forms a lowpass tee network. This topology requires only a single control signal halving the complexity of the switch driver. Additionally, the number of phase shifting components is reduced to only two inductors and two capacitors.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125955724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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