Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<>
{"title":"Circuit techniques for efficient linearised GaAs MMIC's","authors":"D. Haigh","doi":"10.1109/MCS.1992.186030","DOIUrl":"https://doi.org/10.1109/MCS.1992.186030","url":null,"abstract":"Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127638124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Monolithic, two-stage X-band power amplifiers were designed and fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Output power levels of up to 12.5 W continuous wave (CW) were demonstrated at 9.2 GHz from single-chip HBT amplifiers measuring 3.8 mm*4.7 mm in size. Two amplifier designs were fabricated using optimized 300- mu m common-emitter unit cells. Device and circuit design aspects of this work are presented along with measured data on the performance of the power amplifiers. The high CW output power level at X-band frequencies highlights the advantages of HBT technology for microwave solid-state power applications.<>
{"title":"12 W monolithic X-band HBT power amplifier","authors":"M. Khatibzadeh, B. Bayraktaroglu, T. Kim","doi":"10.1109/MCS.1992.185994","DOIUrl":"https://doi.org/10.1109/MCS.1992.185994","url":null,"abstract":"Monolithic, two-stage X-band power amplifiers were designed and fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Output power levels of up to 12.5 W continuous wave (CW) were demonstrated at 9.2 GHz from single-chip HBT amplifiers measuring 3.8 mm*4.7 mm in size. Two amplifier designs were fabricated using optimized 300- mu m common-emitter unit cells. Device and circuit design aspects of this work are presented along with measured data on the performance of the power amplifiers. The high CW output power level at X-band frequencies highlights the advantages of HBT technology for microwave solid-state power applications.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114295317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Majidi-Ahy, C. Nishimoto, J. Russell, W. Ou, S. Bandy, G. Zdasiuk
The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over the 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz and fixed local oscillator (LO) frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500*1000 mu m.<>
{"title":"23-40 GHz InP HEMT MMIC distributed mixer","authors":"R. Majidi-Ahy, C. Nishimoto, J. Russell, W. Ou, S. Bandy, G. Zdasiuk","doi":"10.1109/MCS.1992.186035","DOIUrl":"https://doi.org/10.1109/MCS.1992.186035","url":null,"abstract":"The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over the 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz and fixed local oscillator (LO) frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500*1000 mu m.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134504356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>
{"title":"High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band","authors":"H. Tserng, P. Saunier, Y. Kao","doi":"10.1109/MCS.1992.185995","DOIUrl":"https://doi.org/10.1109/MCS.1992.185995","url":null,"abstract":"The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131201876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Raicu, B. Kraemer, D. Day, J. R. Basset, J. Wei, C. Hua, Y. Chung, C. Chang
The authors present a two-stage power amplifying monolithic microwave integrated circuit (MMIC) capable of delivering 3 W at X-band with high efficiency. They describe the utilization of the MMIC designed in applications differing both in frequency range and in bias conditions. This MMIC was designed for operation with external matching circuits on separate ceramic substrates. By customizing these circuits, the same MMIC can cover an entire array of different applications. The versatility of this approach was demonstrated by the implementation of this MMIC in four power modules specified for different bandwidths, power levels, and bias voltages. The small chip size and the tunability allowed by the external circuits resulted in increased manufacturing yields and made possible significant cost reductions.<>
{"title":"Versatility and manufacturability considerations for a new 3-watt X-band power MMIC","authors":"D. Raicu, B. Kraemer, D. Day, J. R. Basset, J. Wei, C. Hua, Y. Chung, C. Chang","doi":"10.1109/MCS.1992.186039","DOIUrl":"https://doi.org/10.1109/MCS.1992.186039","url":null,"abstract":"The authors present a two-stage power amplifying monolithic microwave integrated circuit (MMIC) capable of delivering 3 W at X-band with high efficiency. They describe the utilization of the MMIC designed in applications differing both in frequency range and in bias conditions. This MMIC was designed for operation with external matching circuits on separate ceramic substrates. By customizing these circuits, the same MMIC can cover an entire array of different applications. The versatility of this approach was demonstrated by the implementation of this MMIC in four power modules specified for different bandwidths, power levels, and bias voltages. The small chip size and the tunability allowed by the external circuits resulted in increased manufacturing yields and made possible significant cost reductions.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132163793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A monolithic broadband variable ring oscillator is described. The single GaAs IC performs as a broadband variable ring oscillator and arbitrary integer frequency divider. The oscillator, a ring of inverters with a variable delay feature, covers two octaves in the 0.4-1.6-GHz range. The oscillator tuning range can be increased by extending the basic topology. A provision for external signal injection permits injection locking. Frequency division was achieved with a selectable arbitrary division ratio by tuning the oscillator to near the desired submultiple of the input signal. Spurious-free output with a constant amplitude was maintained independently of the divide ratio.<>
{"title":"A GaAs IC broadband variable ring oscillator and arbitrary integer divider","authors":"A. Teetzel, R. Walker","doi":"10.1109/MCS.1992.186005","DOIUrl":"https://doi.org/10.1109/MCS.1992.186005","url":null,"abstract":"A monolithic broadband variable ring oscillator is described. The single GaAs IC performs as a broadband variable ring oscillator and arbitrary integer frequency divider. The oscillator, a ring of inverters with a variable delay feature, covers two octaves in the 0.4-1.6-GHz range. The oscillator tuning range can be increased by extending the basic topology. A provision for external signal injection permits injection locking. Frequency division was achieved with a selectable arbitrary division ratio by tuning the oscillator to near the desired submultiple of the input signal. Spurious-free output with a constant amplitude was maintained independently of the divide ratio.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121729939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Gamand, P. Suchet, M. Iost, M. Pertus, A. Collet, J. Bellaiche, P. Rolland, N. Haeze
A wideband image rejection mixer and a high real estate efficiency amplifier were designed and fabricated with a 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) process. The mixer, integrated on 0.6 mm/sup 2/, included an in-phase power splitter. It exhibited better than 30 dB of image rejection from 52 to 60 GHz with 14 dB of conversion loss including the power splitter. Combined with two 0.3-mm/sup 2/ IF monolithic amplifiers, the mixer exhibited 8 to 9 dB of conversion gain from 0.5 to 3 GHz. The amplifier, operating around 62-63 GHz, exhibited better than 8 dB/mm/sup 2/ gain density, with an input/output I/O voltage standing-wave ratio (VSWR) of 2.5.<>
{"title":"Monolithic circuits for 60 GHz communication systems using pseudomorphic HEMT process","authors":"P. Gamand, P. Suchet, M. Iost, M. Pertus, A. Collet, J. Bellaiche, P. Rolland, N. Haeze","doi":"10.1109/MCS.1992.185999","DOIUrl":"https://doi.org/10.1109/MCS.1992.185999","url":null,"abstract":"A wideband image rejection mixer and a high real estate efficiency amplifier were designed and fabricated with a 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) process. The mixer, integrated on 0.6 mm/sup 2/, included an in-phase power splitter. It exhibited better than 30 dB of image rejection from 52 to 60 GHz with 14 dB of conversion loss including the power splitter. Combined with two 0.3-mm/sup 2/ IF monolithic amplifiers, the mixer exhibited 8 to 9 dB of conversion gain from 0.5 to 3 GHz. The amplifier, operating around 62-63 GHz, exhibited better than 8 dB/mm/sup 2/ gain density, with an input/output I/O voltage standing-wave ratio (VSWR) of 2.5.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130032210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<>
{"title":"A novel MMIC PHEMT low noise amplifier for GPS applications","authors":"H. Morkner, M. Frank, R. Kishimura","doi":"10.1109/MCS.1992.185985","DOIUrl":"https://doi.org/10.1109/MCS.1992.185985","url":null,"abstract":"A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132190235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<>
{"title":"Highly producible monolithic Q-band MESFET VCO","authors":"S. Martin, Shirley A. Meyer, E. Reese, K. Salzman","doi":"10.1109/MCS.1992.185997","DOIUrl":"https://doi.org/10.1109/MCS.1992.185997","url":null,"abstract":"The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124291265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Johnson, A. Lum, S. Nelson, E. Reese, K. Salzman
A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<>
{"title":"High efficiency broadband power amplifier MMIC","authors":"K. Johnson, A. Lum, S. Nelson, E. Reese, K. Salzman","doi":"10.1109/MCS.1992.185993","DOIUrl":"https://doi.org/10.1109/MCS.1992.185993","url":null,"abstract":"A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131731527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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