H. Wang, B. Nelson, L. Shaw, R. Kasody, Y. Hwang, W. Jones, D. Brunone, M. Sholly, J. Maguire, T. Best
The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high-electron-mobility-transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The individual circuit designs are outlined. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting a 2-10-GHz IF frequency with a local-oscillator (LO) drive of 10 dBm at 54 GHz.<>
本文介绍了一种采用0.2 μ m InGaAs/GaAs伪晶高电子迁移率晶体管(HEMT)技术的完整单片上变频宏电池的设计和性能。描述了单个组件，包括2-10 ghz中频放大器，v波段上变频混频器和v波段放大器。在设计过程中进行了线性和非线性电路仿真，以预测电路的性能。概述了各个电路的设计。测量结果表明，在v频段注入2-10 GHz中频，并在54 GHz注入10 dBm的本振(LO)驱动器，可获得10 dB的转换增益。
{"title":"A monolithic V-band upconverter, using 0.2 mu m InGaAs/GaAs pseudomorphic HEMT technology","authors":"H. Wang, B. Nelson, L. Shaw, R. Kasody, Y. Hwang, W. Jones, D. Brunone, M. Sholly, J. Maguire, T. Best","doi":"10.1109/MCS.1992.186034","DOIUrl":"https://doi.org/10.1109/MCS.1992.186034","url":null,"abstract":"The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high-electron-mobility-transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The individual circuit designs are outlined. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting a 2-10-GHz IF frequency with a local-oscillator (LO) drive of 10 dBm at 54 GHz.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134400609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<>
{"title":"High performance HEMT MMICs for low cost EHF SATCOM terminals","authors":"J. Lester, W. Jones, P. Huang, D. Garske, P. Chow","doi":"10.1109/MCS.1992.186012","DOIUrl":"https://doi.org/10.1109/MCS.1992.186012","url":null,"abstract":"A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133118132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A power amplifier topology was demonstrated in a microwave monolithic integrated circuit (MMIC) implementation with GaAs MESFETs. This topology overcomes several limitations of the traditional approach of paralleling of power transistor unit cells. In the new topology, unit cells are both parallel and series combined. The benefits include higher input and output impedances, broadband power matched interstage networks, and high voltage biasing at reduced DC current. Measured results on a MMIC and a hybrid power amplifier implemented with this technique are presented.<>
{"title":"A new power amplifier topology with series biasing and power combining of transistors","authors":"M. Shifrin, Y. Ayasli, P. Katzin","doi":"10.1109/MCS.1992.185992","DOIUrl":"https://doi.org/10.1109/MCS.1992.185992","url":null,"abstract":"A power amplifier topology was demonstrated in a microwave monolithic integrated circuit (MMIC) implementation with GaAs MESFETs. This topology overcomes several limitations of the traditional approach of paralleling of power transistor unit cells. In the new topology, unit cells are both parallel and series combined. The benefits include higher input and output impedances, broadband power matched interstage networks, and high voltage biasing at reduced DC current. Measured results on a MMIC and a hybrid power amplifier implemented with this technique are presented.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124904518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A generic Global Positioning System (GPS) receiver architecture is described to highlight the RF/microwave semiconductor components. This generic GPS monolithic microwave integrated circuit (MMIC) contains two downconversion stages and the dividers, buffers, digital phase-frequency detector, and negative resistance cell required to synthesize both local oscillators (LOs) and a transistor-transistor logic (TTL) system clock. The MMIC operates from a 20-MHz external reference and provides overall conversion gain of about 65 dB from a 1575-MHz RF to a 15-MHz second IF. The 1.8*1.8-mm MMIC was implemented on a mixed-signal, silicon bipolar cell array and consumed less than 150 mW from a single 3.3-V supply.<>
描述了一种通用的全球定位系统(GPS)接收器架构，以突出射频/微波半导体组件。这个通用的GPS单片微波集成电路(MMIC)包含两个下变频级和分压器，缓冲器，数字相位频率检测器，以及合成本地振荡器(LOs)和晶体管-晶体管逻辑(TTL)系统时钟所需的负电阻单元。MMIC工作在20 mhz的外部参考电压下，从1575-MHz射频到15-MHz秒中频的总转换增益约为65 dB。1.8*1.8 mm MMIC是在混合信号硅双极电池阵列上实现的，单3.3 v电源消耗小于150mw
{"title":"3.3 V GPS receiver MMIC implemented on a mixed-signal, silicon bipolar array","authors":"K. Negus, R. Koupal, D. Millicker, C. Snapp","doi":"10.1109/MCS.1992.186037","DOIUrl":"https://doi.org/10.1109/MCS.1992.186037","url":null,"abstract":"A generic Global Positioning System (GPS) receiver architecture is described to highlight the RF/microwave semiconductor components. This generic GPS monolithic microwave integrated circuit (MMIC) contains two downconversion stages and the dividers, buffers, digital phase-frequency detector, and negative resistance cell required to synthesize both local oscillators (LOs) and a transistor-transistor logic (TTL) system clock. The MMIC operates from a 20-MHz external reference and provides overall conversion gain of about 65 dB from a 1575-MHz RF to a 15-MHz second IF. The 1.8*1.8-mm MMIC was implemented on a mixed-signal, silicon bipolar cell array and consumed less than 150 mW from a single 3.3-V supply.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126997050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Dieudonné, R. Rittmeyer, B. Adelseck, A. Colquhoun
A fully monolithic GaAs-94 GHz downconverter consisting of a single balanced diode mixer and a two-stage IF amplifier has been fabricated in a MESFET technology on a single chip. A conversion gain of 14.5 dB combined with a double-sideband noise figure of 6.5 dB has been achieved at 94 GHz. The reported results have been obtained in a one-pass design and show the validity of the design method, using technology based Schottky diode equivalent circuit and harmonic balanced analysis, and they also prove the maturity of the technology for millimeter-wave applications.<>
{"title":"A 94 GHz monolithic downconverter in a MESFET technology","authors":"J. Dieudonné, R. Rittmeyer, B. Adelseck, A. Colquhoun","doi":"10.1109/MCS.1992.186000","DOIUrl":"https://doi.org/10.1109/MCS.1992.186000","url":null,"abstract":"A fully monolithic GaAs-94 GHz downconverter consisting of a single balanced diode mixer and a two-stage IF amplifier has been fabricated in a MESFET technology on a single chip. A conversion gain of 14.5 dB combined with a double-sideband noise figure of 6.5 dB has been achieved at 94 GHz. The reported results have been obtained in a one-pass design and show the validity of the design method, using technology based Schottky diode equivalent circuit and harmonic balanced analysis, and they also prove the maturity of the technology for millimeter-wave applications.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129291618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Schlechtweg, W. Reinert, P. Tasker, R. Bosch, J. Braunstein, A. Hulsmann, K. Kohler
Low-noise V-band two-stage amplifiers were fabricated using pseudomorphic MODFETs. They exhibited 10.5-dB gain and a 5.2-dB noise figure at 58.5 GHz, in very close agreement with results predicted in advance. The CAE models for the transistors and the passive coplanar waveguide (CPW) components were extracted from on-wafer S-parameter measurements up to 60 GHz and noise parameter measurements up to 18 GHz. For noise modeling of the MODFETs up to millimeter-wave frequencies, a novel approach based on the temperature-noise model reported by M.W. Pospiezalski (1989) was used. Very good agreement between simulated and measured monolithic microwave integrated circuit (MMIC) gain and noise performances was achieved up to the V-band by using these models.<>
{"title":"Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models","authors":"M. Schlechtweg, W. Reinert, P. Tasker, R. Bosch, J. Braunstein, A. Hulsmann, K. Kohler","doi":"10.1109/MCS.1992.185989","DOIUrl":"https://doi.org/10.1109/MCS.1992.185989","url":null,"abstract":"Low-noise V-band two-stage amplifiers were fabricated using pseudomorphic MODFETs. They exhibited 10.5-dB gain and a 5.2-dB noise figure at 58.5 GHz, in very close agreement with results predicted in advance. The CAE models for the transistors and the passive coplanar waveguide (CPW) components were extracted from on-wafer S-parameter measurements up to 60 GHz and noise parameter measurements up to 18 GHz. For noise modeling of the MODFETs up to millimeter-wave frequencies, a novel approach based on the temperature-noise model reported by M.W. Pospiezalski (1989) was used. Very good agreement between simulated and measured monolithic microwave integrated circuit (MMIC) gain and noise performances was achieved up to the V-band by using these models.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124494091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<>
{"title":"Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs","authors":"J. Sanctuary, C. Woodin, J. Manning","doi":"10.1109/MCS.1992.185988","DOIUrl":"https://doi.org/10.1109/MCS.1992.185988","url":null,"abstract":"A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131659670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<>
{"title":"Broad-band electromagnetic radiation damage in GaAs MESFETs","authors":"J. McAdoo, W. M. Bollen, W. Catoe, R. Kaul","doi":"10.1109/MCS.1992.186036","DOIUrl":"https://doi.org/10.1109/MCS.1992.186036","url":null,"abstract":"A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115206433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The design and performance of a monolithic single sideband modulator that uses lumped element technology to achieve a compact circuit are described. The circuit comprises two balanced mixers, a branch line hybrid to input the carrier frequency, and a Wilkinson power combiner for summing the two mixer outputs. For this design, the carrier frequency was 6.9 GHz and the modulating signal was in the range of 0-500 MHz. The lower sideband was 6.4 to 6.9 GHz and the upper sideband was 6.9 to 7.4 GHz. Upper bounds on the performance of the modulator were derived from an assessment of the circuit components based on computer simulations.<>
{"title":"Monolithic, lumped element, single sideband modulator","authors":"S. J. Parisi","doi":"10.1109/MCS.1992.186031","DOIUrl":"https://doi.org/10.1109/MCS.1992.186031","url":null,"abstract":"The design and performance of a monolithic single sideband modulator that uses lumped element technology to achieve a compact circuit are described. The circuit comprises two balanced mixers, a branch line hybrid to input the carrier frequency, and a Wilkinson power combiner for summing the two mixer outputs. For this design, the carrier frequency was 6.9 GHz and the modulating signal was in the range of 0-500 MHz. The lower sideband was 6.4 to 6.9 GHz and the upper sideband was 6.9 to 7.4 GHz. Upper bounds on the performance of the modulator were derived from an assessment of the circuit components based on computer simulations.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129745810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Dietz, S. Moghe, H. Fudem, R. Haubenstricker, R. Becker
An agile tuning voltage-controlled oscillator (VCO) assembly which covers a wide tuning range with a single control voltage has been developed. The VCO assembly achieved a frequency output of 5.9-16.3 GHz using a single silicon varactor over the tuning range of 0-20 V. The VCO assembly was realized by combining specially designed wideband millimeter-wave VCO/doubler, mixer, and dielectric resonator oscillator (DRO) monolithic microwave integrated circuit (MMIC) chips.<>
{"title":"A 5.9-16.3 GHz agile tuning source using wideband millimeter wave MMIC circuits","authors":"G. Dietz, S. Moghe, H. Fudem, R. Haubenstricker, R. Becker","doi":"10.1109/MCS.1992.185998","DOIUrl":"https://doi.org/10.1109/MCS.1992.185998","url":null,"abstract":"An agile tuning voltage-controlled oscillator (VCO) assembly which covers a wide tuning range with a single control voltage has been developed. The VCO assembly achieved a frequency output of 5.9-16.3 GHz using a single silicon varactor over the tuning range of 0-20 V. The VCO assembly was realized by combining specially designed wideband millimeter-wave VCO/doubler, mixer, and dielectric resonator oscillator (DRO) monolithic microwave integrated circuit (MMIC) chips.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123232020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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