A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<>
{"title":"A Ku band converter IC","authors":"T. Kaneko, T. Miya, S. Yoshida","doi":"10.1109/MCS.1992.186025","DOIUrl":"https://doi.org/10.1109/MCS.1992.186025","url":null,"abstract":"A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126148295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Takagi, Y. Ikeda, K. Seino, G. Toyoshima, A. Inoue, N. Kasai, M. Takada
A UHF-band 1.3-W high-efficiency, four-stage monolithic power amplifier with a novel miniaturized second-harmonic terminating circuit was developed. With the use of a parallel resonant circuit composed of lumped elements for terminating the second harmonic, it achieved a maximum drain efficiency of 63% and a saturated output power of higher than 31 dBm in the UHF band, and it occupied an area of 8.6*5.8 mm.<>
{"title":"A UHF band 1.3 W monolithic amplifier with efficiency of 63%","authors":"T. Takagi, Y. Ikeda, K. Seino, G. Toyoshima, A. Inoue, N. Kasai, M. Takada","doi":"10.1109/MCS.1992.185991","DOIUrl":"https://doi.org/10.1109/MCS.1992.185991","url":null,"abstract":"A UHF-band 1.3-W high-efficiency, four-stage monolithic power amplifier with a novel miniaturized second-harmonic terminating circuit was developed. With the use of a parallel resonant circuit composed of lumped elements for terminating the second harmonic, it achieved a maximum drain efficiency of 63% and a saturated output power of higher than 31 dBm in the UHF band, and it occupied an area of 8.6*5.8 mm.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134309189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Neilson, B. Allen, M. Kintis, M. Hoppe, S. Maas
The authors describe the design and performance of a single-chip upconverter IC consisting of a doubly balanced dual-gate FET mixer, a four-stage local oscillator (LO) amplifier, and a single-stage IF amplifier. Due to a novel mixer topology, the input passband of the converter extended from DC to 5 GHz, the LO frequency range was 8 GHz to 16 GHz, and the IF output frequency range was 8 to 10 GHz. The primary design goals for this upconverter were a high third-order intermodulation intercept point (IP/sub 3/) and good spurious-response rejection. Advanced FET models were used to optimize the circuit's intercept points. The converter exhibited an IP/sub 3/ of 23.5 dBm across most of the band; second-order intercept points (IP/sub 2/) for spurious responses were greater than +40 dBm.<>
{"title":"A broadband upconverter IC","authors":"D. Neilson, B. Allen, M. Kintis, M. Hoppe, S. Maas","doi":"10.1109/MCS.1992.186026","DOIUrl":"https://doi.org/10.1109/MCS.1992.186026","url":null,"abstract":"The authors describe the design and performance of a single-chip upconverter IC consisting of a doubly balanced dual-gate FET mixer, a four-stage local oscillator (LO) amplifier, and a single-stage IF amplifier. Due to a novel mixer topology, the input passband of the converter extended from DC to 5 GHz, the LO frequency range was 8 GHz to 16 GHz, and the IF output frequency range was 8 to 10 GHz. The primary design goals for this upconverter were a high third-order intermodulation intercept point (IP/sub 3/) and good spurious-response rejection. Advanced FET models were used to optimize the circuit's intercept points. The converter exhibited an IP/sub 3/ of 23.5 dBm across most of the band; second-order intercept points (IP/sub 2/) for spurious responses were greater than +40 dBm.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132248964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors summarize very-high-temperature life-test results on monolithic microwave integrated circuit (MMIC) switches and attenuators designed, assembled, and screened by Motorola GEG and manufactured and tested by TriQuint. It was found that individual heating and RF bias resulted in data that indicate that these devices degrade linearly with lognormal failure distributions and compare favorably with historical DC life-testing of MMIC amplifiers. Electrical measurements indicated MESFET gate degradation was occurring, which was confirmed by failure analysis. The failure mechanism was found to be highly accelerated by temperature and is not expected to impede device lifetimes at normal use conditions for thousands of years.<>
{"title":"Lifetesting GaAs MMICs under RF stimulus","authors":"W. Roesch, T. Rubalcava, C. Hanson","doi":"10.1109/MCS.1992.186006","DOIUrl":"https://doi.org/10.1109/MCS.1992.186006","url":null,"abstract":"The authors summarize very-high-temperature life-test results on monolithic microwave integrated circuit (MMIC) switches and attenuators designed, assembled, and screened by Motorola GEG and manufactured and tested by TriQuint. It was found that individual heating and RF bias resulted in data that indicate that these devices degrade linearly with lognormal failure distributions and compare favorably with historical DC life-testing of MMIC amplifiers. Electrical measurements indicated MESFET gate degradation was occurring, which was confirmed by failure analysis. The failure mechanism was found to be highly accelerated by temperature and is not expected to impede device lifetimes at normal use conditions for thousands of years.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128769152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Platzker, J. B. Cole, S. Davis, M. Goldfarb, K. Tabatabaie-Alavi, J. Wendler
The authors have developed an enhancement GaAs monolithic microwave integrated circuit (MMIC) process which is capable of producing very-low-power, highly efficient transmitting/receiving circuits which can be operated from unipolar 3-V batteries. They have demonstrated key circuits such as a surface acoustic wave (SAW) locked oscillator, a variable-gain 180 degrees phase shifter, and a variable-gain power amplifier. The amplifier required a DC current of 4 mA and delivered 4 dBm to 50- Omega loads with greater than 25 dB of gain. The process is capable of producing high-gain devices with low knee voltages of less than 1 V which pinch-off at 0 V. The very low substrate losses and current leaks associated with the process allow design of RF circuits in high-impedance environments.<>
{"title":"Extremely low power transmitter/receiver GaAs MMIC circuits at L band","authors":"A. Platzker, J. B. Cole, S. Davis, M. Goldfarb, K. Tabatabaie-Alavi, J. Wendler","doi":"10.1109/MCS.1992.186008","DOIUrl":"https://doi.org/10.1109/MCS.1992.186008","url":null,"abstract":"The authors have developed an enhancement GaAs monolithic microwave integrated circuit (MMIC) process which is capable of producing very-low-power, highly efficient transmitting/receiving circuits which can be operated from unipolar 3-V batteries. They have demonstrated key circuits such as a surface acoustic wave (SAW) locked oscillator, a variable-gain 180 degrees phase shifter, and a variable-gain power amplifier. The amplifier required a DC current of 4 mA and delivered 4 dBm to 50- Omega loads with greater than 25 dB of gain. The process is capable of producing high-gain devices with low knee voltages of less than 1 V which pinch-off at 0 V. The very low substrate losses and current leaks associated with the process allow design of RF circuits in high-impedance environments.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116870600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<>
{"title":"Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions","authors":"K. Cioffi, Rockwell","doi":"10.1109/MCS.1992.185984","DOIUrl":"https://doi.org/10.1109/MCS.1992.185984","url":null,"abstract":"Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116998562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Jouanneau-Douard, H. Brouzes, S. Bionaz, D. Levy
The design, realization, and performance of an ultrawideband 180 degrees monolithic microwave integrated circuit (MMIC) combiner are presented. The circuit design was based on a simple original principle combining common-source and common-drain transistors to achieve wideband phase shifting and output matching. Realization of the MMIC has shown very good agreement between simulated and measured performance. In the 1-18-GHz bandwidth, amplitude balance between the two paths was better than 0.5 dB, while phase difference stayed at 180 degrees with a maximum error of 10 degrees at 18 GHz.<>
{"title":"A 1 to 18 GHz out of phase combiner","authors":"M. Jouanneau-Douard, H. Brouzes, S. Bionaz, D. Levy","doi":"10.1109/MCS.1992.186004","DOIUrl":"https://doi.org/10.1109/MCS.1992.186004","url":null,"abstract":"The design, realization, and performance of an ultrawideband 180 degrees monolithic microwave integrated circuit (MMIC) combiner are presented. The circuit design was based on a simple original principle combining common-source and common-drain transistors to achieve wideband phase shifting and output matching. Realization of the MMIC has shown very good agreement between simulated and measured performance. In the 1-18-GHz bandwidth, amplitude balance between the two paths was better than 0.5 dB, while phase difference stayed at 180 degrees with a maximum error of 10 degrees at 18 GHz.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133159611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<>
{"title":"A double balanced 3-18 GHz resistive HEMT monolithic mixer","authors":"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak","doi":"10.1109/MCS.1992.186027","DOIUrl":"https://doi.org/10.1109/MCS.1992.186027","url":null,"abstract":"A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130942990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Darwish, A. Ezzeddine, H.-L.A. Hung, F. Phelleps
A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilized a pair of limiting diodes to keep the metal-semiconductor field-effect transistor (MESFET) operating a linear region. An X-band monolithic microwave integrated circuit (MMIC) oscillator was designed, fabricated, and tested to demonstrate the concept. A reduction of 15 dB in phase noise at 5 kHz from the carrier was measured.<>
{"title":"A new phase noise reduction technique for MMIC oscillators","authors":"A. Darwish, A. Ezzeddine, H.-L.A. Hung, F. Phelleps","doi":"10.1109/MCS.1992.186028","DOIUrl":"https://doi.org/10.1109/MCS.1992.186028","url":null,"abstract":"A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilized a pair of limiting diodes to keep the metal-semiconductor field-effect transistor (MESFET) operating a linear region. An X-band monolithic microwave integrated circuit (MMIC) oscillator was designed, fabricated, and tested to demonstrate the concept. A reduction of 15 dB in phase noise at 5 kHz from the carrier was measured.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
GaAs application-specific IC (ASIC) design is considered as applicable to the full integration of the 5-GHz front-end of MLS (microwave landing system) equipment. All the different functions, such as amplifiers, switches, oscillators, and mixers, have been integrated, as well as digital functions needed for fractional divider frequency synthesis. The front-end was implemented as five GaAs chips on a 2 square inch hybrid. All the designed ASICs fully complied with specifications and allowed the equipment to run in a military environment. The results in terms of spectral purity were very satisfactory.<>
{"title":"GaAs ICs for 5 GHz microwave landing system front-end","authors":"J.L. De Gouy, P. Boutigny, P. Jean, A. Grancher","doi":"10.1109/MCS.1992.186033","DOIUrl":"https://doi.org/10.1109/MCS.1992.186033","url":null,"abstract":"GaAs application-specific IC (ASIC) design is considered as applicable to the full integration of the 5-GHz front-end of MLS (microwave landing system) equipment. All the different functions, such as amplifiers, switches, oscillators, and mixers, have been integrated, as well as digital functions needed for fractional divider frequency synthesis. The front-end was implemented as five GaAs chips on a 2 square inch hybrid. All the designed ASICs fully complied with specifications and allowed the equipment to run in a military environment. The results in terms of spectral purity were very satisfactory.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124910189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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