1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619204
R. Fork, V. Riasati
Summary form only given. We examine an array of coupled modelocked semiconductor lasers combining close packing density with very specifically controlled linear and nonlinear behavior. The application provides an optical analog of agile phased array microwave radar. A particular concern is pulse forming and true time delay for any array of short optical pulses. In essence this requires phase-locking the entire set of modes of an array of physically distinct microlaser oscillators into a quasi-stable state and then rapidly reconfiguring that phase-locking along a well controlled trajectory to a different, and also quasi-stable, state.
{"title":"Application of semiconductor lasers to agile optical phased arrays","authors":"R. Fork, V. Riasati","doi":"10.1109/LEOSST.1997.619204","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619204","url":null,"abstract":"Summary form only given. We examine an array of coupled modelocked semiconductor lasers combining close packing density with very specifically controlled linear and nonlinear behavior. The application provides an optical analog of agile phased array microwave radar. A particular concern is pulse forming and true time delay for any array of short optical pulses. In essence this requires phase-locking the entire set of modes of an array of physically distinct microlaser oscillators into a quasi-stable state and then rapidly reconfiguring that phase-locking along a well controlled trajectory to a different, and also quasi-stable, state.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128161354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619240
D. Emerson, J. Smart, J. Shealy, H. Kong, J. Edmond
Flow modulation epitaxy (FME) has been employed previously to synthesize III-V arsenides and phosphides. However, the ability of FME to extend growth to lower temperatures than those required for conventional organometallic vapor phase epitaxy (OMVPE) has only recently been explored for the synthesis of nitride based semiconductors. Because, in part, of the importance of low temperature growth to the synthesis of indium-containing group III-nitrides, this growth technique should be explored further. In this paper we report on the FME of group III-nitride compounds on sapphire and silicon carbide substrates.
{"title":"Optimized conditions for flow modulation epitaxy of GaN","authors":"D. Emerson, J. Smart, J. Shealy, H. Kong, J. Edmond","doi":"10.1109/LEOSST.1997.619240","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619240","url":null,"abstract":"Flow modulation epitaxy (FME) has been employed previously to synthesize III-V arsenides and phosphides. However, the ability of FME to extend growth to lower temperatures than those required for conventional organometallic vapor phase epitaxy (OMVPE) has only recently been explored for the synthesis of nitride based semiconductors. Because, in part, of the importance of low temperature growth to the synthesis of indium-containing group III-nitrides, this growth technique should be explored further. In this paper we report on the FME of group III-nitride compounds on sapphire and silicon carbide substrates.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619118
K. Sato
The optical path concept was proposed to resolve problems in transport node technologies such as ATM switching. It offers quantum leaps in both transmission capacity and cross-connect throughput simultaneously by exploiting WDM transmission and the wavelength routing capabilities of paths. The transmission capacity expansion due to WDM and the commensurate increase in cross-connect throughput possible with wavelength routing enable flexible and cost-effective broadband networking.
{"title":"Multimedia communication and its impact on photonic networking","authors":"K. Sato","doi":"10.1109/LEOSST.1997.619118","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619118","url":null,"abstract":"The optical path concept was proposed to resolve problems in transport node technologies such as ATM switching. It offers quantum leaps in both transmission capacity and cross-connect throughput simultaneously by exploiting WDM transmission and the wavelength routing capabilities of paths. The transmission capacity expansion due to WDM and the commensurate increase in cross-connect throughput possible with wavelength routing enable flexible and cost-effective broadband networking.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126854741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619246
A. Abare, S. Keller, M. Mack, L. Coldren, S. Denbaars
InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
{"title":"Barrier and well width study of InGaN/GaN multiple quantum wells","authors":"A. Abare, S. Keller, M. Mack, L. Coldren, S. Denbaars","doi":"10.1109/LEOSST.1997.619246","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619246","url":null,"abstract":"InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124870830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619263
V. Elyukhin, E. Avrutin, J. Marsh, E. L. Portnoi
We present a calculation of spinodal decomposition temperatures for a variety of nitride compounds taking into account both the coherency stress and an arbitrary degree of ordering and show that, for a given composition, superstructures tend to have lower decomposition temperatures than random alloys and may therefore be advantageous.
{"title":"Calculation of spinodal decomposition temperature in cubic ternary nitride materials including coherency stress and spontaneous ordering","authors":"V. Elyukhin, E. Avrutin, J. Marsh, E. L. Portnoi","doi":"10.1109/LEOSST.1997.619263","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619263","url":null,"abstract":"We present a calculation of spinodal decomposition temperatures for a variety of nitride compounds taking into account both the coherency stress and an arbitrary degree of ordering and show that, for a given composition, superstructures tend to have lower decomposition temperatures than random alloys and may therefore be advantageous.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619137
P. Demeester, L. Vandendriessche, B. Van Caenegem, W. van Parys
WDM transport networks are moving fast from the laboratory and field trial environment to deployment in operational networks. One of the key issues is the management of these transparent networks and the impact on the required component functionalities. This paper will address these issues in more detail.
{"title":"Impact of WDM network management on optical component functionalities","authors":"P. Demeester, L. Vandendriessche, B. Van Caenegem, W. van Parys","doi":"10.1109/LEOSST.1997.619137","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619137","url":null,"abstract":"WDM transport networks are moving fast from the laboratory and field trial environment to deployment in operational networks. One of the key issues is the management of these transparent networks and the impact on the required component functionalities. This paper will address these issues in more detail.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122131543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619084
M. Crawford, K. Choquette, H. Hou, R. Hickman, K. Geib, B. E. Hammons
In this talk, we will present results on recent improvements in the performance of AlGaInP visible VCSEL structures brought about by new heterostructure designs; in particular high temperature performance.
{"title":"Visible VCSELs: recent advances and applications","authors":"M. Crawford, K. Choquette, H. Hou, R. Hickman, K. Geib, B. E. Hammons","doi":"10.1109/LEOSST.1997.619084","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619084","url":null,"abstract":"In this talk, we will present results on recent improvements in the performance of AlGaInP visible VCSEL structures brought about by new heterostructure designs; in particular high temperature performance.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123764897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619217
P. Gallion, F. Jérémie
Semi-classical theory of semiconductor laser noise considers the spontaneous emission fluctuations as the major noise source. We propose a classical corpuscular theory in which a laser beam is considered as a flow of classical particles without mutual interaction. The intrinsic field fluctuations are described as the shot noise associated with the photon production or absorption. The noise linked to mirror losses is taken into account in the form of partition noise. It can be represented by a partition Langevin noise force linked to laser facet reflections.
{"title":"Classical corpuscular optical theory of squeezed states of light","authors":"P. Gallion, F. Jérémie","doi":"10.1109/LEOSST.1997.619217","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619217","url":null,"abstract":"Semi-classical theory of semiconductor laser noise considers the spontaneous emission fluctuations as the major noise source. We propose a classical corpuscular theory in which a laser beam is considered as a flow of classical particles without mutual interaction. The intrinsic field fluctuations are described as the shot noise associated with the photon production or absorption. The noise linked to mirror losses is taken into account in the form of partition noise. It can be represented by a partition Langevin noise force linked to laser facet reflections.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131761732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619238
J. T. Kobayashi, N. Kobayashi, P. Dapkus, X. Zhang, D. Rich
Summary form only given. In this talk, we will discuss dependance of this growth mode on various reactor parameters including reactant flows, carrier gas, rotation speed and separation between the showerhead and substrate. These parameters all effect the hydrodynamics and chemical reaction pathways of this unique reactor design. We will discuss how the growth conditions affect the formation of the three dimensional islands and now the variation in the density and the size or the islands at the initial stages of overlayer growth affect the coalescence of the islands and the surface morphology and electrical, structural and optical quality of the GaN overlayer.
{"title":"Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor","authors":"J. T. Kobayashi, N. Kobayashi, P. Dapkus, X. Zhang, D. Rich","doi":"10.1109/LEOSST.1997.619238","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619238","url":null,"abstract":"Summary form only given. In this talk, we will discuss dependance of this growth mode on various reactor parameters including reactant flows, carrier gas, rotation speed and separation between the showerhead and substrate. These parameters all effect the hydrodynamics and chemical reaction pathways of this unique reactor design. We will discuss how the growth conditions affect the formation of the three dimensional islands and now the variation in the density and the size or the islands at the initial stages of overlayer growth affect the coalescence of the islands and the surface morphology and electrical, structural and optical quality of the GaN overlayer.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121306349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619121
L.M. Wang, J.H. Chen, M. Shih, F. Choa, P. Wisk, W. Tsang, C. Burrus
In conclusion, a new detection scheme using integrated heterodyne transceiver with counter-mixing operation was experimentally investigated. A received power sensitivity of-32 dBm at 100 Mb/s was obtained. A simple theoretical model to optimize the receiver sensitivity was developed. Different full-duplex operation schemes were discussed. The counter-mixing mode heterodyne receivers could be a good candidate for broadband coherent access networks.
{"title":"Counter-mixing mode integrated heterodyne transceivers","authors":"L.M. Wang, J.H. Chen, M. Shih, F. Choa, P. Wisk, W. Tsang, C. Burrus","doi":"10.1109/LEOSST.1997.619121","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619121","url":null,"abstract":"In conclusion, a new detection scheme using integrated heterodyne transceiver with counter-mixing operation was experimentally investigated. A received power sensitivity of-32 dBm at 100 Mb/s was obtained. A simple theoretical model to optimize the receiver sensitivity was developed. Different full-duplex operation schemes were discussed. The counter-mixing mode heterodyne receivers could be a good candidate for broadband coherent access networks.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131015490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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