1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619112
T. Oh, D. Huffaker, M. MacDaniel, D. Deppe
In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.
{"title":"Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding","authors":"T. Oh, D. Huffaker, M. MacDaniel, D. Deppe","doi":"10.1109/LEOSST.1997.619112","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619112","url":null,"abstract":"In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126766356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619132
L. Gillner, C. P. Larsen, M. Gustavsson
It was shown that optical cross-connect node architectures, which suppress all first order crosstalk contributions, were necessary in order to give crosstalk requirements on multiplexers and space switches that are realistic to fulfil given current state of the art devices. Regarding accumulation of interferometric crosstalk and noise, large all-optical networks (>10 nodes in diameter with 32 inputs/outputs per node and 32 wavelengths per fibre) should be feasible, given component crosstalk of about -30 dB.
{"title":"Influence of crosstalk on the scalability of optical multi-wavelength switching networks","authors":"L. Gillner, C. P. Larsen, M. Gustavsson","doi":"10.1109/LEOSST.1997.619132","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619132","url":null,"abstract":"It was shown that optical cross-connect node architectures, which suppress all first order crosstalk contributions, were necessary in order to give crosstalk requirements on multiplexers and space switches that are realistic to fulfil given current state of the art devices. Regarding accumulation of interferometric crosstalk and noise, large all-optical networks (>10 nodes in diameter with 32 inputs/outputs per node and 32 wavelengths per fibre) should be feasible, given component crosstalk of about -30 dB.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132958127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619093
M. Takahashi, N. Egami, A. Mizutani, A. Matsutani, F. Koyama, K. Iga
We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.
{"title":"Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate","authors":"M. Takahashi, N. Egami, A. Mizutani, A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/LEOSST.1997.619093","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619093","url":null,"abstract":"We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130398726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619094
Wupen Yuen, G.S. Li, C. Chang-Hasnain
The lasing wavelength of a VCSEL is primarily determined by the effective cavity thickness which can be varied by changing the thickness of the /spl lambda/-spacer or the DBR layers. There have been many efforts in making MW-VCSEL arrays, where different methods of varying the effective cavity thickness were explored. Among all these methods, patterned-substrate MBE growth presents a very attractive approach since only a single growth is necessary and wide and accurate wavelength spans can be achieved with in-situ monitoring. In this paper, we review two patterned substrate methods. Both lead to simultaneous achievements of wide /spl lambda/ spacing, high yield and high performance. The comparison between the two methods is discussed.
{"title":"Multiple-wavelength VCSEL arrays on patterned substrates","authors":"Wupen Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/LEOSST.1997.619094","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619094","url":null,"abstract":"The lasing wavelength of a VCSEL is primarily determined by the effective cavity thickness which can be varied by changing the thickness of the /spl lambda/-spacer or the DBR layers. There have been many efforts in making MW-VCSEL arrays, where different methods of varying the effective cavity thickness were explored. Among all these methods, patterned-substrate MBE growth presents a very attractive approach since only a single growth is necessary and wide and accurate wavelength spans can be achieved with in-situ monitoring. In this paper, we review two patterned substrate methods. Both lead to simultaneous achievements of wide /spl lambda/ spacing, high yield and high performance. The comparison between the two methods is discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134299950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619221
T.R. Chen
Summary form only given. In this talk, advances in wide temperature DFB lasers will be reviewed. The principles for wide temperature range operation of a DFB laser will be addressed. Important issues such as maintaining singlemode operation across a wide temperature range, temperature sensitivity of threshold current and slope efficiency of a DFB laser, low distortion in a wide temperature range and reliability of wide temperature DFB lasers will be discussed.
{"title":"Wide temperature range operation of DFB lasers at 1.3 /spl mu/m wavelength","authors":"T.R. Chen","doi":"10.1109/LEOSST.1997.619221","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619221","url":null,"abstract":"Summary form only given. In this talk, advances in wide temperature DFB lasers will be reviewed. The principles for wide temperature range operation of a DFB laser will be addressed. Important issues such as maintaining singlemode operation across a wide temperature range, temperature sensitivity of threshold current and slope efficiency of a DFB laser, low distortion in a wide temperature range and reliability of wide temperature DFB lasers will be discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134349421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619087
K. Goto
We have already developed a lensless optical floppy disk system. In this paper an ultra high density optical memory disk system of T bits/inch/sup 2/ with G bits/s data transfer rate is newly proposed using near field optics, of which tracks are electric controlled. The optical heads in this system use 100/spl times/100 microcavity VCSEL arrays. One track width on the disk is 20 nm which is fine controlled by an electrical method using a 150/spl times/150 photo-diode array and the whole head is controlled by a conventional optical and electric-mechanical method in seeking tracks.
{"title":"Tera bytes optical disk with electric tracking control using micro-cavity VCSEL array and PD array","authors":"K. Goto","doi":"10.1109/LEOSST.1997.619087","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619087","url":null,"abstract":"We have already developed a lensless optical floppy disk system. In this paper an ultra high density optical memory disk system of T bits/inch/sup 2/ with G bits/s data transfer rate is newly proposed using near field optics, of which tracks are electric controlled. The optical heads in this system use 100/spl times/100 microcavity VCSEL arrays. One track width on the disk is 20 nm which is fine controlled by an electrical method using a 150/spl times/150 photo-diode array and the whole head is controlled by a conventional optical and electric-mechanical method in seeking tracks.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126627433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619219
P. Kerstetter, G. Casinovi
Optoelectronic systems can be intricate and difficult to analyze. With the necessary integration of new devices as well as with the increase in complexity of optoelectronic systems, analysis and design of such systems has become a lengthy and time-consuming effort. However, the use of efficient computer simulation tools with accurate device models can help alleviate such problems. Currently we are developing an optoelectronic system simulator that makes use of a new quantum-well laser model.
{"title":"A quantum-well laser model for SPICE-like simulators","authors":"P. Kerstetter, G. Casinovi","doi":"10.1109/LEOSST.1997.619219","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619219","url":null,"abstract":"Optoelectronic systems can be intricate and difficult to analyze. With the necessary integration of new devices as well as with the increase in complexity of optoelectronic systems, analysis and design of such systems has become a lengthy and time-consuming effort. However, the use of efficient computer simulation tools with accurate device models can help alleviate such problems. Currently we are developing an optoelectronic system simulator that makes use of a new quantum-well laser model.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125759637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619253
W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. Koch
To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.
{"title":"Theory of gain in InGaN quantum well lasers","authors":"W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. Koch","doi":"10.1109/LEOSST.1997.619253","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619253","url":null,"abstract":"To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"210 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116150023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619154
L. Domash, Yong-Ming Chen, P. Haugsjaa, M. Oren
Just as Bragg gratings are a favored technique for wavelength-selective filtering in optical waveguide systems, switchable Bragg gratings are theoretically an optimum active WDM switching mechanism. To date however, few practical methods for switchable waveguide Bragg gratings are available that combine large dynamic range, index compatibility, good optical quality, and ease of fabrication. Recently, Sutherland and coworkers (1993, 1995, 1997) demonstrated a holographic polymerization process in a polymer-dispersed liquid crystal composite that results in efficient electronically switchable Bragg gratings (ESBG) with low scattering. We report the first waveguide WDM applications.
{"title":"Electronically switchable waveguide Bragg gratings for WDM routing","authors":"L. Domash, Yong-Ming Chen, P. Haugsjaa, M. Oren","doi":"10.1109/LEOSST.1997.619154","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619154","url":null,"abstract":"Just as Bragg gratings are a favored technique for wavelength-selective filtering in optical waveguide systems, switchable Bragg gratings are theoretically an optimum active WDM switching mechanism. To date however, few practical methods for switchable waveguide Bragg gratings are available that combine large dynamic range, index compatibility, good optical quality, and ease of fabrication. Recently, Sutherland and coworkers (1993, 1995, 1997) demonstrated a holographic polymerization process in a polymer-dispersed liquid crystal composite that results in efficient electronically switchable Bragg gratings (ESBG) with low scattering. We report the first waveguide WDM applications.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116694335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619139
C. Dreze
Increased bandwidth and functionality will be offered by WDM networks compared to single wavelength ones, with applications ranging from straightforward capacity enhancement through to switched virtual dark fiber carrying disparate traffic to customers' premises. However, their implementation depends on their capability of offering the users cost effective solutions. This means that WDM equipment must be built small, rugged with low power consumption and high functional density. The network access module (NAM) developed at Nortel as part of the optical networks technology consortium (ONTC) illustrates such integration.
{"title":"Multiwavelength network access technologies","authors":"C. Dreze","doi":"10.1109/LEOSST.1997.619139","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619139","url":null,"abstract":"Increased bandwidth and functionality will be offered by WDM networks compared to single wavelength ones, with applications ranging from straightforward capacity enhancement through to switched virtual dark fiber carrying disparate traffic to customers' premises. However, their implementation depends on their capability of offering the users cost effective solutions. This means that WDM equipment must be built small, rugged with low power consumption and high functional density. The network access module (NAM) developed at Nortel as part of the optical networks technology consortium (ONTC) illustrates such integration.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114460797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：