1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619096
G. Almuneau, F. Genty, L. Chusseau, S. Gaillard, N. Bertru, J. Jacquet
The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (1.3 and 1.55 /spl mu/m). Very high reflectivities of 99.2% at 1.56 /spl mu/m and for the first time 98.8% at 1.3 /spl mu/m have been obtained. We are now investigating this antimonide approach for fabricating monolithic VCSELs. Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation.
{"title":"AlGaAsSb/AlAsSb Bragg mirrors on InP for 1.3 and 1.55 /spl mu/m vertical cavity surface emitting lasers","authors":"G. Almuneau, F. Genty, L. Chusseau, S. Gaillard, N. Bertru, J. Jacquet","doi":"10.1109/LEOSST.1997.619096","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619096","url":null,"abstract":"The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (1.3 and 1.55 /spl mu/m). Very high reflectivities of 99.2% at 1.56 /spl mu/m and for the first time 98.8% at 1.3 /spl mu/m have been obtained. We are now investigating this antimonide approach for fabricating monolithic VCSELs. Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122043204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619093
M. Takahashi, N. Egami, A. Mizutani, A. Matsutani, F. Koyama, K. Iga
We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.
{"title":"Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate","authors":"M. Takahashi, N. Egami, A. Mizutani, A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/LEOSST.1997.619093","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619093","url":null,"abstract":"We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130398726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619221
T.R. Chen
Summary form only given. In this talk, advances in wide temperature DFB lasers will be reviewed. The principles for wide temperature range operation of a DFB laser will be addressed. Important issues such as maintaining singlemode operation across a wide temperature range, temperature sensitivity of threshold current and slope efficiency of a DFB laser, low distortion in a wide temperature range and reliability of wide temperature DFB lasers will be discussed.
{"title":"Wide temperature range operation of DFB lasers at 1.3 /spl mu/m wavelength","authors":"T.R. Chen","doi":"10.1109/LEOSST.1997.619221","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619221","url":null,"abstract":"Summary form only given. In this talk, advances in wide temperature DFB lasers will be reviewed. The principles for wide temperature range operation of a DFB laser will be addressed. Important issues such as maintaining singlemode operation across a wide temperature range, temperature sensitivity of threshold current and slope efficiency of a DFB laser, low distortion in a wide temperature range and reliability of wide temperature DFB lasers will be discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134349421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619094
Wupen Yuen, G.S. Li, C. Chang-Hasnain
The lasing wavelength of a VCSEL is primarily determined by the effective cavity thickness which can be varied by changing the thickness of the /spl lambda/-spacer or the DBR layers. There have been many efforts in making MW-VCSEL arrays, where different methods of varying the effective cavity thickness were explored. Among all these methods, patterned-substrate MBE growth presents a very attractive approach since only a single growth is necessary and wide and accurate wavelength spans can be achieved with in-situ monitoring. In this paper, we review two patterned substrate methods. Both lead to simultaneous achievements of wide /spl lambda/ spacing, high yield and high performance. The comparison between the two methods is discussed.
{"title":"Multiple-wavelength VCSEL arrays on patterned substrates","authors":"Wupen Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/LEOSST.1997.619094","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619094","url":null,"abstract":"The lasing wavelength of a VCSEL is primarily determined by the effective cavity thickness which can be varied by changing the thickness of the /spl lambda/-spacer or the DBR layers. There have been many efforts in making MW-VCSEL arrays, where different methods of varying the effective cavity thickness were explored. Among all these methods, patterned-substrate MBE growth presents a very attractive approach since only a single growth is necessary and wide and accurate wavelength spans can be achieved with in-situ monitoring. In this paper, we review two patterned substrate methods. Both lead to simultaneous achievements of wide /spl lambda/ spacing, high yield and high performance. The comparison between the two methods is discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134299950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619126
C. Lam, E. Yablonovitch
Development in the WDM technologies has made multi-wavelength optical sources and components available. By combining WDM mux-demux and fast electro-optic switches, a fast configurable WDM add-drop filter can be obtained. This enables using WDM with TDM in a way that each TDM time slot is also wavelength multiplexed. Hence introducing a second dimension for switching in addition to the time dimension. This also alleviates the demanding requirement on TDM as the switching throughput increases. The number of channels that can be supported in a WDM/TDM hybrid switching system is the product of the number of time slots and the number of available wavelengths. We have done preliminary analysis on the system throughput. We will present implementation considerations of the above described systems, the give the comparison on the throughput and security sides.
{"title":"Terabit switching and security enhancement in a WDM/TDM hybrid system","authors":"C. Lam, E. Yablonovitch","doi":"10.1109/LEOSST.1997.619126","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619126","url":null,"abstract":"Development in the WDM technologies has made multi-wavelength optical sources and components available. By combining WDM mux-demux and fast electro-optic switches, a fast configurable WDM add-drop filter can be obtained. This enables using WDM with TDM in a way that each TDM time slot is also wavelength multiplexed. Hence introducing a second dimension for switching in addition to the time dimension. This also alleviates the demanding requirement on TDM as the switching throughput increases. The number of channels that can be supported in a WDM/TDM hybrid switching system is the product of the number of time slots and the number of available wavelengths. We have done preliminary analysis on the system throughput. We will present implementation considerations of the above described systems, the give the comparison on the throughput and security sides.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130700241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619132
L. Gillner, C. P. Larsen, M. Gustavsson
It was shown that optical cross-connect node architectures, which suppress all first order crosstalk contributions, were necessary in order to give crosstalk requirements on multiplexers and space switches that are realistic to fulfil given current state of the art devices. Regarding accumulation of interferometric crosstalk and noise, large all-optical networks (>10 nodes in diameter with 32 inputs/outputs per node and 32 wavelengths per fibre) should be feasible, given component crosstalk of about -30 dB.
{"title":"Influence of crosstalk on the scalability of optical multi-wavelength switching networks","authors":"L. Gillner, C. P. Larsen, M. Gustavsson","doi":"10.1109/LEOSST.1997.619132","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619132","url":null,"abstract":"It was shown that optical cross-connect node architectures, which suppress all first order crosstalk contributions, were necessary in order to give crosstalk requirements on multiplexers and space switches that are realistic to fulfil given current state of the art devices. Regarding accumulation of interferometric crosstalk and noise, large all-optical networks (>10 nodes in diameter with 32 inputs/outputs per node and 32 wavelengths per fibre) should be feasible, given component crosstalk of about -30 dB.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132958127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619089
R. Pu, E. Hayes, C. Wilmsen, K. Choquette, K. Geib, H. Hou
An opto-electronic integrated circuit (OEIC) smart pixel is a structure composed of optical inputs and/or outputs interconnected to electronic processing circuitry. The optical I/O allows the data to be read in 2-D page oriented formats. This circumvents the bottlenecks in the electrical interconnections and improves speed by reducing the capacitance and inductance of the wirebonds. Recently, we have reported the successful hybrid integration of VCSELs to a foundry fabricated OEIC by flip-chip bump-bonding a back-emitting VCSEL array. In this paper we present the results of improved integration processing and VCSEL design that will increase yields and mechanical and electrical robustness. In addition, a new approach to bonding VCSELs directly to the smart pixels is presented.
{"title":"Hybrid integration of VCSELs to foundry fabricated smart pixels","authors":"R. Pu, E. Hayes, C. Wilmsen, K. Choquette, K. Geib, H. Hou","doi":"10.1109/LEOSST.1997.619089","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619089","url":null,"abstract":"An opto-electronic integrated circuit (OEIC) smart pixel is a structure composed of optical inputs and/or outputs interconnected to electronic processing circuitry. The optical I/O allows the data to be read in 2-D page oriented formats. This circumvents the bottlenecks in the electrical interconnections and improves speed by reducing the capacitance and inductance of the wirebonds. Recently, we have reported the successful hybrid integration of VCSELs to a foundry fabricated OEIC by flip-chip bump-bonding a back-emitting VCSEL array. In this paper we present the results of improved integration processing and VCSEL design that will increase yields and mechanical and electrical robustness. In addition, a new approach to bonding VCSELs directly to the smart pixels is presented.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128918815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619168
J.H. Chen, Y. Chai, J.Y. Fan, F. Choa, T. Tanbun-ek, R. Logan, W. Tsang, C. Burrus
To manage a WDM network, the signal at each wavelength channel must be constantly monitored, and the power of each channel should be individually controlled to provide a reliable, user friendly system. Although terminal devices (such as detectors) can monitor, an optical in-line device that can perform both the monitoring and controlling function would be optimal. In this paper, we present the experimental results of using an integrated tunable active filter as just such a useful device.
{"title":"WDM channel monitoring and signal power control/equalization using integrated tunable active filters","authors":"J.H. Chen, Y. Chai, J.Y. Fan, F. Choa, T. Tanbun-ek, R. Logan, W. Tsang, C. Burrus","doi":"10.1109/LEOSST.1997.619168","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619168","url":null,"abstract":"To manage a WDM network, the signal at each wavelength channel must be constantly monitored, and the power of each channel should be individually controlled to provide a reliable, user friendly system. Although terminal devices (such as detectors) can monitor, an optical in-line device that can perform both the monitoring and controlling function would be optimal. In this paper, we present the experimental results of using an integrated tunable active filter as just such a useful device.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128722412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619098
Y. Qian, Z. Zhu, Y. Lo, D. Huffaker, D. Deppe, H. Hou, B. E. Hammons, W. Lin, Y.K. Yu
We show schematically the oxygen-implanted VCSELs. The devices consist of an oxygen implanted p-GaAs-AlGaAs (28 pairs) mirror, AlGaInAs-InP strain-compensated multiple quantum well (SC-MQW) cavity layers, and a top ZnSe/MgF (6 pairs) dielectric mirror.
{"title":"High performance 1.3 /spl mu/m vertical-cavity surface-emitting lasers with oxygen-implanted confinement regions and wafer-bonded mirrors","authors":"Y. Qian, Z. Zhu, Y. Lo, D. Huffaker, D. Deppe, H. Hou, B. E. Hammons, W. Lin, Y.K. Yu","doi":"10.1109/LEOSST.1997.619098","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619098","url":null,"abstract":"We show schematically the oxygen-implanted VCSELs. The devices consist of an oxygen implanted p-GaAs-AlGaAs (28 pairs) mirror, AlGaInAs-InP strain-compensated multiple quantum well (SC-MQW) cavity layers, and a top ZnSe/MgF (6 pairs) dielectric mirror.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"259 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122826199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619184
H. Singh, W. Morey
Of the various applications of fiber Bragg gratings, their use as spectral filters is perhaps the most common. While the most important reasons why Bragg gratings are preferred over interference filters are cited as low insertion loss and polarization insensitivity, an often overlooked, but very important feature of Bragg gratings is the control over filter profile. Bragg gratings can easily be designed to have high or low reflectance, narrow or wide bandwidth, and none or any chirp. All these features make Bragg gratings a very attractive filter for DWDM applications such as channel multiplexing/demultiplexing or channel add/drop. While most requirements for DWDM applications such as low PDL, low insertion loss and low PMD are usually met by Bragg gratings, high channel isolation due to narrow bandwidth gratings is still a topic of investigation. The lower limit on the bandwidth is usually imposed by the existence of side lobes found in any grating filter. While it is well known that narrow bandwidth gratings can be achieved simply by apodizing the grating, a simple apodization yields a self induced chirp leading to resonance on the blue side of the filter. Strasser et al. (1996) reported that such effects can be eliminated by raising the average index of the grating such that it is constant along the grating. This phenomenon is illustrated using simulation tools.
{"title":"Apodized fiber gratings for DWDM using variable efficiency phase masks","authors":"H. Singh, W. Morey","doi":"10.1109/LEOSST.1997.619184","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619184","url":null,"abstract":"Of the various applications of fiber Bragg gratings, their use as spectral filters is perhaps the most common. While the most important reasons why Bragg gratings are preferred over interference filters are cited as low insertion loss and polarization insensitivity, an often overlooked, but very important feature of Bragg gratings is the control over filter profile. Bragg gratings can easily be designed to have high or low reflectance, narrow or wide bandwidth, and none or any chirp. All these features make Bragg gratings a very attractive filter for DWDM applications such as channel multiplexing/demultiplexing or channel add/drop. While most requirements for DWDM applications such as low PDL, low insertion loss and low PMD are usually met by Bragg gratings, high channel isolation due to narrow bandwidth gratings is still a topic of investigation. The lower limit on the bandwidth is usually imposed by the existence of side lobes found in any grating filter. While it is well known that narrow bandwidth gratings can be achieved simply by apodizing the grating, a simple apodization yields a self induced chirp leading to resonance on the blue side of the filter. Strasser et al. (1996) reported that such effects can be eliminated by raising the average index of the grating such that it is constant along the grating. This phenomenon is illustrated using simulation tools.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122504391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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