1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619230
M. Krainak, R. Afzal, M. Stephen, G. Browder, J. Haden, N. Carlson
We present tests of 100 W/bar quasi-CW laser diode arrays conducted, at SDL Inc. (at various deratings with constant junction temperature) and NASA Goddard, to assist in designing lasers for use in space.
{"title":"Performance tests of quasi-CW laser diode pump arrays conducted or sponsored by NASA Goddard Space Flight Center","authors":"M. Krainak, R. Afzal, M. Stephen, G. Browder, J. Haden, N. Carlson","doi":"10.1109/LEOSST.1997.619230","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619230","url":null,"abstract":"We present tests of 100 W/bar quasi-CW laser diode arrays conducted, at SDL Inc. (at various deratings with constant junction temperature) and NASA Goddard, to assist in designing lasers for use in space.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114642075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619108
M. J. Noble, J. Lott, J. Loehr, P. Sotirelis
This new finite element method model is expected to be valuable for the design of microcavity devices. It can be used to optimize optical mode control by examining changes of size, shape, number, and location of native oxide layers. It may also be combined with semiconductor gain calculations to determine the higher-order mode suppression level for various microcavity surface emitting laser designs. Finally, it may be used to analyze VCSEL lasing and spontaneous emission near-field structure. This information is of considerable importance in the design of optical interconnect and communication systems.
{"title":"Analysis of three dimensionally confined microcavity surface emitting lasers using vector finite elements","authors":"M. J. Noble, J. Lott, J. Loehr, P. Sotirelis","doi":"10.1109/LEOSST.1997.619108","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619108","url":null,"abstract":"This new finite element method model is expected to be valuable for the design of microcavity devices. It can be used to optimize optical mode control by examining changes of size, shape, number, and location of native oxide layers. It may also be combined with semiconductor gain calculations to determine the higher-order mode suppression level for various microcavity surface emitting laser designs. Finally, it may be used to analyze VCSEL lasing and spontaneous emission near-field structure. This information is of considerable importance in the design of optical interconnect and communication systems.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619250
E. Hellman
It is often asserted that the principal obstacle to the epitaxial growth of high quality gallium nitride is the lack of a lattice matched substrate. Although this view is overly simplistic and underly factual, it conveys the correct impression that the most commonly used substrate, sapphire, has many shortcomings. Are there substrates to improve on sapphire? We have studied the growth of gallium nitride on a variety of materials, including ZnO, LiGaO/sub 2/, LiAlO/sub 2/, ScMgAlO/sub 4/, Si, garnets and spinels. By growing on a variety of materials, we can assess the relative importance of lattice match, thermal expansion match, chemical stability and compatibility, polarity, and even cost of a substrate on the ensuing growth.
{"title":"Exotic and mundane substrates for gallium nitride heteroepitaxy","authors":"E. Hellman","doi":"10.1109/LEOSST.1997.619250","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619250","url":null,"abstract":"It is often asserted that the principal obstacle to the epitaxial growth of high quality gallium nitride is the lack of a lattice matched substrate. Although this view is overly simplistic and underly factual, it conveys the correct impression that the most commonly used substrate, sapphire, has many shortcomings. Are there substrates to improve on sapphire? We have studied the growth of gallium nitride on a variety of materials, including ZnO, LiGaO/sub 2/, LiAlO/sub 2/, ScMgAlO/sub 4/, Si, garnets and spinels. By growing on a variety of materials, we can assess the relative importance of lattice match, thermal expansion match, chemical stability and compatibility, polarity, and even cost of a substrate on the ensuing growth.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132176402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619080
E. Hegblom, B. Thibeault, L. Coldren
We have fabricated /spl lambda/=980 nm vertical cavity lasers with a tapered oxide profile which is produced by placing a 10.5 nm layer of AlAs within the first p-mirror layer which is a 230 nm (3/4 /spl lambda/) thick Al/sub 0.9/Ga/sub 0.1/As layer. We have plotted the scattering loss (as determined from the differential efficiency of tapered and abrupt apertured devices) vs. the radius of the opening in the oxide. Simulations of 980 nm AlAs/GaAs VCLs with quarter-wave thick apertures tapered over more than /spl sim/3 /spl mu/m show they have no excess loss. Although for a given mode size, scattering losses from such a "long" tapered aperture are much lower than for an abrupt aperture, the apertures close off before the mode size can shrink below a l/e/sup 2/ radius of /spl sim/1.5 /spl mu/m. Tapering quarter-wave thick apertures over a shorter distance (/spl sim/1 /spl mu/m) not only lowers scattering losses at the small aperture sizes, but also confines the mode to the smallest sizes. Ultimately, the smallest size mode confined by a single aperture (obtained by using a parabolic (ideal lens) profile) is limited by the angular stop-band of the DBR mirror. For 980 nm VCLs with AlAs/GaAs mirrors the smallest mode size has a l/e/sup 2/ radius of /spl sim/0.6 /spl mu/m. To reduce this size further one would need to turn to dielectric mirrors or use multiple apertures which are thin so as not to introduce additional losses.
{"title":"Towards microcavity vertical cavity lasers: aperture and cavity design for high efficiency and low threshold","authors":"E. Hegblom, B. Thibeault, L. Coldren","doi":"10.1109/LEOSST.1997.619080","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619080","url":null,"abstract":"We have fabricated /spl lambda/=980 nm vertical cavity lasers with a tapered oxide profile which is produced by placing a 10.5 nm layer of AlAs within the first p-mirror layer which is a 230 nm (3/4 /spl lambda/) thick Al/sub 0.9/Ga/sub 0.1/As layer. We have plotted the scattering loss (as determined from the differential efficiency of tapered and abrupt apertured devices) vs. the radius of the opening in the oxide. Simulations of 980 nm AlAs/GaAs VCLs with quarter-wave thick apertures tapered over more than /spl sim/3 /spl mu/m show they have no excess loss. Although for a given mode size, scattering losses from such a \"long\" tapered aperture are much lower than for an abrupt aperture, the apertures close off before the mode size can shrink below a l/e/sup 2/ radius of /spl sim/1.5 /spl mu/m. Tapering quarter-wave thick apertures over a shorter distance (/spl sim/1 /spl mu/m) not only lowers scattering losses at the small aperture sizes, but also confines the mode to the smallest sizes. Ultimately, the smallest size mode confined by a single aperture (obtained by using a parabolic (ideal lens) profile) is limited by the angular stop-band of the DBR mirror. For 980 nm VCLs with AlAs/GaAs mirrors the smallest mode size has a l/e/sup 2/ radius of /spl sim/0.6 /spl mu/m. To reduce this size further one would need to turn to dielectric mirrors or use multiple apertures which are thin so as not to introduce additional losses.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126754733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619225
M. Tsurusawa, M. Usami, Y. Matsushima
We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.
{"title":"Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light","authors":"M. Tsurusawa, M. Usami, Y. Matsushima","doi":"10.1109/LEOSST.1997.619225","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619225","url":null,"abstract":"We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116646491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619141
Kai Liu
In the last few years, wavelength division multiplexing has successfully penetrated the long-haul telephony infrastructure to the degree that some general agreement exists as to the associated component requirements. Although manufacturers still make primarily custom devices, these custom designs resemble each other more than they differ. As a result, manufacturers have been able to make the commitments that allow their technology to develop which, in turn, enable faster maturing of WDM systems. In this, the work on standardization has been quite helpful even though the stated purpose of ensuring interoperability of systems is far from realized. Now, the research community's attention is beginning to turn to new WDM markets, primarily access telephony, but also high-end datacom. The purpose of this paper is to discuss some early ideas on how component requirements might differ for these new markets. Of course, there has been much discussion about the general trends towards a blurring between datacom and telecom as Internet traffic becomes a significant fraction of the telephony load, and as voice/video real-time applications are of increasing interest for Internet and Web applications. However, these trends are likely to result in changes at higher layers than the physical layer so it is impossible to account for them except to note that perhaps WDM offers some flexibility to meet changing resource allocation needs in the future.
{"title":"Are WDM component needs for datacom different than for telecom?","authors":"Kai Liu","doi":"10.1109/LEOSST.1997.619141","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619141","url":null,"abstract":"In the last few years, wavelength division multiplexing has successfully penetrated the long-haul telephony infrastructure to the degree that some general agreement exists as to the associated component requirements. Although manufacturers still make primarily custom devices, these custom designs resemble each other more than they differ. As a result, manufacturers have been able to make the commitments that allow their technology to develop which, in turn, enable faster maturing of WDM systems. In this, the work on standardization has been quite helpful even though the stated purpose of ensuring interoperability of systems is far from realized. Now, the research community's attention is beginning to turn to new WDM markets, primarily access telephony, but also high-end datacom. The purpose of this paper is to discuss some early ideas on how component requirements might differ for these new markets. Of course, there has been much discussion about the general trends towards a blurring between datacom and telecom as Internet traffic becomes a significant fraction of the telephony load, and as voice/video real-time applications are of increasing interest for Internet and Web applications. However, these trends are likely to result in changes at higher layers than the physical layer so it is impossible to account for them except to note that perhaps WDM offers some flexibility to meet changing resource allocation needs in the future.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122413979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619216
C. Henry, R. Kazarinov
In summary, there are two sources of quantum noise: spontaneous currents and vacuum fluctuations. Together, they account for the stability of the atomic ground state, spontaneous emission, shot noise and optical noise in lasers and amplifiers.
{"title":"The origins of quantum noise in photonics","authors":"C. Henry, R. Kazarinov","doi":"10.1109/LEOSST.1997.619216","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619216","url":null,"abstract":"In summary, there are two sources of quantum noise: spontaneous currents and vacuum fluctuations. Together, they account for the stability of the atomic ground state, spontaneous emission, shot noise and optical noise in lasers and amplifiers.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121257338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619130
A. Grah
At the Communications Research Centre, in collaboration with Nortel and the National Research Council, an eight wavelength Network Access Module (NAM) is currently under development. Such devices can be deployed so as to form an optoelectronic, regenerative, broadband ring backbone network for ATM traffic. This paper reports on the impact of wavelength assignment on the number of add/drop lines required at each NAM when configured in a ring topology. Additionally, system performance in the absence of adequate media access control on the ring is examined.
{"title":"Configuration and performance for a WDM NAM network","authors":"A. Grah","doi":"10.1109/LEOSST.1997.619130","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619130","url":null,"abstract":"At the Communications Research Centre, in collaboration with Nortel and the National Research Council, an eight wavelength Network Access Module (NAM) is currently under development. Such devices can be deployed so as to form an optoelectronic, regenerative, broadband ring backbone network for ATM traffic. This paper reports on the impact of wavelength assignment on the number of add/drop lines required at each NAM when configured in a ring topology. Additionally, system performance in the absence of adequate media access control on the ring is examined.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127770885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619150
C. Weil, D. van Thourhout, I. Moerman, S. Goeman, K. Vandeputte, R. Baets, F. Groen, Y. Zhu
The wavelength add/drop multiplexer (ADM) is one of the key components for dense wavelength division multiplexing (DWDM) systems. To realise this function, a number of schemes have been proposed and tested based on planar waveguide circuits or optical fibers, such as the planar waveguide based grating-folded directional coupler ADM, fiber based ADM's using Mach-Zehnder interferometer structure and photoimprinted Bragg gratings and so on. We proposed a new add/drop scheme based on elliptic beam collimators and Bragg gratings realised in InP. In this paper, we will report the device design, fabrication and the preliminary experimental results.
{"title":"An integrated optical add/drop multiplexer in InP based on elliptic couplers and Bragg grating reflector","authors":"C. Weil, D. van Thourhout, I. Moerman, S. Goeman, K. Vandeputte, R. Baets, F. Groen, Y. Zhu","doi":"10.1109/LEOSST.1997.619150","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619150","url":null,"abstract":"The wavelength add/drop multiplexer (ADM) is one of the key components for dense wavelength division multiplexing (DWDM) systems. To realise this function, a number of schemes have been proposed and tested based on planar waveguide circuits or optical fibers, such as the planar waveguide based grating-folded directional coupler ADM, fiber based ADM's using Mach-Zehnder interferometer structure and photoimprinted Bragg gratings and so on. We proposed a new add/drop scheme based on elliptic beam collimators and Bragg gratings realised in InP. In this paper, we will report the device design, fabrication and the preliminary experimental results.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132548253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619257
R. Karlicek, C. Tran, M. Schurman, T. Salagaj, I. Ferguson
Summary form only given. The use of in situ spectral reflectance for monitoring the growth of GaN is described. By using this method to measure the growth of GaN nucleation layers at several temperatures and reactor pressures, the activation energy for the growth of the GaN nucleation layer versus temperature was determined to be 126 kJ/mole, independent of growth pressure over the range of 55 to 200 torr. During the growth of GaN, the nucleation layer is too thin to be measured using interferometry, but reflectivity measurements during the initial stages of high temperature GaN growth immediately following nucleation layer deposition probe the initial GaN surface morphology. While the final, thick GaN films are specular, the amount of time needed to create a smooth reflective growing surface can range from 100 to 1000 seconds. The required time is inferred from the development of good GaN surface reflectivity with intense interference fringes for the growth of a simple undoped GaN layer.
{"title":"Spectral reflectivity monitoring of GaN growth","authors":"R. Karlicek, C. Tran, M. Schurman, T. Salagaj, I. Ferguson","doi":"10.1109/LEOSST.1997.619257","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619257","url":null,"abstract":"Summary form only given. The use of in situ spectral reflectance for monitoring the growth of GaN is described. By using this method to measure the growth of GaN nucleation layers at several temperatures and reactor pressures, the activation energy for the growth of the GaN nucleation layer versus temperature was determined to be 126 kJ/mole, independent of growth pressure over the range of 55 to 200 torr. During the growth of GaN, the nucleation layer is too thin to be measured using interferometry, but reflectivity measurements during the initial stages of high temperature GaN growth immediately following nucleation layer deposition probe the initial GaN surface morphology. While the final, thick GaN films are specular, the amount of time needed to create a smooth reflective growing surface can range from 100 to 1000 seconds. The required time is inferred from the development of good GaN surface reflectivity with intense interference fringes for the growth of a simple undoped GaN layer.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114535148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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