1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619166
A. D. Cohen, R. Mears
We report equalisation of eight 3-4 nm-spaced WDM channels amplified by a non-gain-flattened EDFA. The 9.5 dB spectral gain range is reduced to 0.75 dB. Flattening of the filter passband has been experimentally demonstrated The dynamic holographic technology is based on a 128/spl times/128 pixellated FLC SLM (ferroelectric liquid crystal spatial light modulator) displaying 1-D binary-phase holograms, in combination with a fixed binary-phase grating.
{"title":"Dynamic holographic eight-channel spectral equaliser for WDM","authors":"A. D. Cohen, R. Mears","doi":"10.1109/LEOSST.1997.619166","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619166","url":null,"abstract":"We report equalisation of eight 3-4 nm-spaced WDM channels amplified by a non-gain-flattened EDFA. The 9.5 dB spectral gain range is reduced to 0.75 dB. Flattening of the filter passband has been experimentally demonstrated The dynamic holographic technology is based on a 128/spl times/128 pixellated FLC SLM (ferroelectric liquid crystal spatial light modulator) displaying 1-D binary-phase holograms, in combination with a fixed binary-phase grating.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133663187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619105
K. Ebeling, M. Grabherr, R. Jager, R. Michalzik
Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.
{"title":"Diode cascade quantum well VCSEL","authors":"K. Ebeling, M. Grabherr, R. Jager, R. Michalzik","doi":"10.1109/LEOSST.1997.619105","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619105","url":null,"abstract":"Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132633304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619088
J. Wasserbauer, J. Scott, S. Swirhun, D. Lewis, P. Kazlas
High speed, dense arrays of vertical cavity lasers (VCLs) and detectors are at the core of many optically-interconnected computers and optical processors. In both applications, desired VCL properties include low threshold current and voltage, high single-mode power, high contrast and excellent array uniformity; desired detector characteristics include high speed and responsivity. In this paper, we present a general purpose optical interconnect device for optical computing applications. The device is comprised of a monolithically integrated vertical-cavity laser (VCL) and PIN photodiode array.
{"title":"Integrated VCL/PIN arrays for optical computing applications","authors":"J. Wasserbauer, J. Scott, S. Swirhun, D. Lewis, P. Kazlas","doi":"10.1109/LEOSST.1997.619088","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619088","url":null,"abstract":"High speed, dense arrays of vertical cavity lasers (VCLs) and detectors are at the core of many optically-interconnected computers and optical processors. In both applications, desired VCL properties include low threshold current and voltage, high single-mode power, high contrast and excellent array uniformity; desired detector characteristics include high speed and responsivity. In this paper, we present a general purpose optical interconnect device for optical computing applications. The device is comprised of a monolithically integrated vertical-cavity laser (VCL) and PIN photodiode array.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114866451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619206
V. Velichansky, A. Yarovitsky, L. Hollberg, M. Gorodetsky, V. Ilchenko
The applications of diode lasers (DL) have recently become much wider because methods for linewidth narrowing have been developed. One of the most effective methods relies on the optical feedback. Two modifications providing the same degree of narrowing are known: 1) an increase of the cavity Q-factor by increasing the cavity length without a significant change of the number of passes (strong coupling to an external cavity); 2) weak coupling to an external high-Q multipass cavity. We report on using a fused silica microsphere with the diameter of 370 um as an external high-Q cavity.
{"title":"A diode laser with an external high-Q microcavity","authors":"V. Velichansky, A. Yarovitsky, L. Hollberg, M. Gorodetsky, V. Ilchenko","doi":"10.1109/LEOSST.1997.619206","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619206","url":null,"abstract":"The applications of diode lasers (DL) have recently become much wider because methods for linewidth narrowing have been developed. One of the most effective methods relies on the optical feedback. Two modifications providing the same degree of narrowing are known: 1) an increase of the cavity Q-factor by increasing the cavity length without a significant change of the number of passes (strong coupling to an external cavity); 2) weak coupling to an external high-Q multipass cavity. We report on using a fused silica microsphere with the diameter of 370 um as an external high-Q cavity.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"315 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133532864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619229
L. Mawst
Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and "wallplug" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.
{"title":"High-performance Al-free diode lasers","authors":"L. Mawst","doi":"10.1109/LEOSST.1997.619229","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619229","url":null,"abstract":"Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and \"wallplug\" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116601476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619200
T. Hidaka, S. Matuura, M. Tani, K. Sakai
Summary form only given. Generation of cw THz electromagnetic waves by photomixing of two lights from independent two lasers had attracted a great deal of attention. However, each laser in the system should be stabilized separately, and a perfect spatial mode matching was required for efficient THz generation. Optical-alignment procedure is troublesome in practical uses. We report here a novel cw THz wave generation system using a two-longitudinal-mode laser diode (LD) in place of those complex or expensive light sources so far used. The two-longitudinal-mode LD used here radiated two coherent lights with their separation about 0.9THz, simultaneously from a single stripe.
{"title":"Application of a novel two-longitudinal-mode LD as a source for CW THz wave generation by photomixing","authors":"T. Hidaka, S. Matuura, M. Tani, K. Sakai","doi":"10.1109/LEOSST.1997.619200","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619200","url":null,"abstract":"Summary form only given. Generation of cw THz electromagnetic waves by photomixing of two lights from independent two lasers had attracted a great deal of attention. However, each laser in the system should be stabilized separately, and a perfect spatial mode matching was required for efficient THz generation. Optical-alignment procedure is troublesome in practical uses. We report here a novel cw THz wave generation system using a two-longitudinal-mode laser diode (LD) in place of those complex or expensive light sources so far used. The two-longitudinal-mode LD used here radiated two coherent lights with their separation about 0.9THz, simultaneously from a single stripe.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125696664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619210
D. Oh, A. Stanton
Trace gas monitoring with antimonide diode lasers combined with high sensitivity absorption detection techniques is described. Our work in progress targets NO, CO, H/sub 2/O and H/sub 2/CO detection under reduced pressure sampling conditions.
{"title":"Monitoring trace gases with antimonide diode lasers","authors":"D. Oh, A. Stanton","doi":"10.1109/LEOSST.1997.619210","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619210","url":null,"abstract":"Trace gas monitoring with antimonide diode lasers combined with high sensitivity absorption detection techniques is described. Our work in progress targets NO, CO, H/sub 2/O and H/sub 2/CO detection under reduced pressure sampling conditions.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123445101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619241
S.R. Chung, J. Chen, T. Worchesky
Gallium nitride (GaN) is a very promising material for short wavelength optoelectronic devices. Recently, much progress has been made on device fabrication, but little is still known about the growth parameters of GaN. We have studied two of the parameters effecting the growth of high quality GaN. The boundary layer plays an important role in the growth of most III-V materials but no data is currently available upon it's effect on GaN growth. Likewise, very few results are available on the effect of the thermal gradient upon the growth of single crystal GaN.
{"title":"The effects of boundary layer and thermal gradient upon GaN growth","authors":"S.R. Chung, J. Chen, T. Worchesky","doi":"10.1109/LEOSST.1997.619241","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619241","url":null,"abstract":"Gallium nitride (GaN) is a very promising material for short wavelength optoelectronic devices. Recently, much progress has been made on device fabrication, but little is still known about the growth parameters of GaN. We have studied two of the parameters effecting the growth of high quality GaN. The boundary layer plays an important role in the growth of most III-V materials but no data is currently available upon it's effect on GaN growth. Likewise, very few results are available on the effect of the thermal gradient upon the growth of single crystal GaN.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125025471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619218
A. Champagne, Jianyao Chen, R. Maciejko, T. Makino
In gain-coupled (GC) multiple-quantum-well (MQW) distributed feedback (DFB) lasers, phenomena on the submicron scale corresponding to quantum-well active regions with etched Bragg gratings have been shown to affect overall laser performance. In this paper we present results combining submicron bi-dimensional modeling with a fine-scale longitudinal transfer matrix calculation, above threshold. This has the benefit of considering both the detailed bi-dimensional carrier behaviour at the Bragg-wavelength scale and the larger scale DFB effects such as the longitudinal spatial hole burning and the non-uniform current injection along the the laser cavity.
{"title":"Fine-scale analysis of gain-coupled MQW DFB lasers","authors":"A. Champagne, Jianyao Chen, R. Maciejko, T. Makino","doi":"10.1109/LEOSST.1997.619218","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619218","url":null,"abstract":"In gain-coupled (GC) multiple-quantum-well (MQW) distributed feedback (DFB) lasers, phenomena on the submicron scale corresponding to quantum-well active regions with etched Bragg gratings have been shown to affect overall laser performance. In this paper we present results combining submicron bi-dimensional modeling with a fine-scale longitudinal transfer matrix calculation, above threshold. This has the benefit of considering both the detailed bi-dimensional carrier behaviour at the Bragg-wavelength scale and the larger scale DFB effects such as the longitudinal spatial hole burning and the non-uniform current injection along the the laser cavity.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129782334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619175
J.Z. Huang, M. Hu, J. Fujita, R. Scarmozzino, R. Osgood
A metal-coated multimode interference (MMI) device is proposed and analyzed. Simulations show that due to its ideal mode spectrum and resulting enhanced imaging performance, the device has applications to low index contrast polymer waveguides. We demonstrate its feasibility by the design and simulation of a polymer channel waveguide MMI coated with Al. Experimental demonstration and application will be the next step for this design concept.
{"title":"High-performance metal-coated multimode interference (MMI) devices for WDM applications","authors":"J.Z. Huang, M. Hu, J. Fujita, R. Scarmozzino, R. Osgood","doi":"10.1109/LEOSST.1997.619175","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619175","url":null,"abstract":"A metal-coated multimode interference (MMI) device is proposed and analyzed. Simulations show that due to its ideal mode spectrum and resulting enhanced imaging performance, the device has applications to low index contrast polymer waveguides. We demonstrate its feasibility by the design and simulation of a polymer channel waveguide MMI coated with Al. Experimental demonstration and application will be the next step for this design concept.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127660620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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