1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619102
T. Czogalla, K. Petermann
An analytical expression and experimental results for the turn-on delay probability density function (PDF) of single mode vertical cavity surface emitting lasers (SM-VCSELs) are presented.
{"title":"Turn-on jitter in zero-biased single-mode vertical cavity surface emitting lasers","authors":"T. Czogalla, K. Petermann","doi":"10.1109/LEOSST.1997.619102","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619102","url":null,"abstract":"An analytical expression and experimental results for the turn-on delay probability density function (PDF) of single mode vertical cavity surface emitting lasers (SM-VCSELs) are presented.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114239012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619202
M. Kourogi, K. Imai, B. Widiatmoko, M. Ohtsu
In summary, expansion of the optical frequency comb (OFC) span was realized by applying self-phase modulation, and the resulted span of the OFC was 47THz. The OFC is based on an electro-optical modulator enclosed in a high finesse optical cavity driven by microwaves with a constant frequency, generating more than one thousand equally spaced sidebands on large frequency span as wide as several THz from a cw laser light.
{"title":"Super wide span optical frequency comb generation by nonlinear self-phase-modulation in an optical fiber","authors":"M. Kourogi, K. Imai, B. Widiatmoko, M. Ohtsu","doi":"10.1109/LEOSST.1997.619202","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619202","url":null,"abstract":"In summary, expansion of the optical frequency comb (OFC) span was realized by applying self-phase modulation, and the resulted span of the OFC was 47THz. The OFC is based on an electro-optical modulator enclosed in a high finesse optical cavity driven by microwaves with a constant frequency, generating more than one thousand equally spaced sidebands on large frequency span as wide as several THz from a cw laser light.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126549234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619183
A. Srivastava, Y. Sun
The erbium doped fiber amplifier (EDFA) is a key enabler of WDM transmission systems and wavelength routed optical networks. EDFAs are well suited to compensate the optical loss of network elements and transmission spans. Although the EDFA's are almost ideal in their characteristics, they are not quite perfect. Two effects which are critical in WDM networks and transmission systems are spectral gain non-uniformity and channel cross saturation in EDFAs.
{"title":"Optical amplifiers for optical networks","authors":"A. Srivastava, Y. Sun","doi":"10.1109/LEOSST.1997.619183","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619183","url":null,"abstract":"The erbium doped fiber amplifier (EDFA) is a key enabler of WDM transmission systems and wavelength routed optical networks. EDFAs are well suited to compensate the optical loss of network elements and transmission spans. Although the EDFA's are almost ideal in their characteristics, they are not quite perfect. Two effects which are critical in WDM networks and transmission systems are spectral gain non-uniformity and channel cross saturation in EDFAs.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128081318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619169
E. Koteles
We illustrate the performance of an actual WDM photonic integrated circuit (PIC); a two-wavelength, waveguide demultiplexer, fabricated using QW intermixing. They use the technique of spatially selective quantum well shape modification.
{"title":"Monolithic integration of WDM components using QW shape modification","authors":"E. Koteles","doi":"10.1109/LEOSST.1997.619169","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619169","url":null,"abstract":"We illustrate the performance of an actual WDM photonic integrated circuit (PIC); a two-wavelength, waveguide demultiplexer, fabricated using QW intermixing. They use the technique of spatially selective quantum well shape modification.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122217833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619083
Chao-Kun Lin, J. Geske, A. Bond, Won-Jin Choi, P. Dapkus
Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.
{"title":"850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures","authors":"Chao-Kun Lin, J. Geske, A. Bond, Won-Jin Choi, P. Dapkus","doi":"10.1109/LEOSST.1997.619083","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619083","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131376351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619214
H. Simonsen, J. Henningsen, T. Møgelberg
Near infrared diode lasers are attractive for spectroscopic applications due to their good spectral purity and low amplitude noise. They operate at room temperature with single-mode output power of milliwatts, and are adapted to fibre optic technology. Wavelength tunability is achieved using an extended cavity configuration. We report on a system based on high resolution infrared spectrometry in the 1.5-1.6 /spl mu/m region where several gases have overtone or combination absorption bands. In monitoring applications toxic and flammable gases like CO and H/sub 2/S are of particular interest. CO detection is aimed at detecting fires with special reference to smouldering combustion within the insulating layers of equipment, whereas H/sub 2/S is a major health hazard on oil rigs producing sour oil.
{"title":"Monitoring of molecular species using near-infrared extended cavity diode lasers","authors":"H. Simonsen, J. Henningsen, T. Møgelberg","doi":"10.1109/LEOSST.1997.619214","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619214","url":null,"abstract":"Near infrared diode lasers are attractive for spectroscopic applications due to their good spectral purity and low amplitude noise. They operate at room temperature with single-mode output power of milliwatts, and are adapted to fibre optic technology. Wavelength tunability is achieved using an extended cavity configuration. We report on a system based on high resolution infrared spectrometry in the 1.5-1.6 /spl mu/m region where several gases have overtone or combination absorption bands. In monitoring applications toxic and flammable gases like CO and H/sub 2/S are of particular interest. CO detection is aimed at detecting fires with special reference to smouldering combustion within the insulating layers of equipment, whereas H/sub 2/S is a major health hazard on oil rigs producing sour oil.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131938962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619099
K. Streubel
A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.
{"title":"Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror","authors":"K. Streubel","doi":"10.1109/LEOSST.1997.619099","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619099","url":null,"abstract":"A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132111201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619097
N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel
Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.
{"title":"120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser","authors":"N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel","doi":"10.1109/LEOSST.1997.619097","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619097","url":null,"abstract":"Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134361302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619199
C. Laperle, M. Svilans, M. Poirier, M. Tetu
Microwave beat signals were generated from a novel dual-wavelength DFB laser integrated with an active Y-junction coupler. This compact laser device is highly manufacturable due to its simple design which uses only the standard DFB process.
{"title":"Microwave generation with monolithic dual-wavelength DFB lasers","authors":"C. Laperle, M. Svilans, M. Poirier, M. Tetu","doi":"10.1109/LEOSST.1997.619199","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619199","url":null,"abstract":"Microwave beat signals were generated from a novel dual-wavelength DFB laser integrated with an active Y-junction coupler. This compact laser device is highly manufacturable due to its simple design which uses only the standard DFB process.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131794216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619110
R. Thornton
The laser printer uses a rotating polygon mirror to scan a modulated laser beam across a photoconductive material, writing a latent image as an electrostatic charge pattern. This electrostatic charge pattern attracts toner particles which are then transferred to paper. Semiconductor lasers have been a key enabler in the development of small and low cost desktop laser printers.
{"title":"Vertical cavity lasers for printing","authors":"R. Thornton","doi":"10.1109/LEOSST.1997.619110","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619110","url":null,"abstract":"The laser printer uses a rotating polygon mirror to scan a modulated laser beam across a photoconductive material, writing a latent image as an electrostatic charge pattern. This electrostatic charge pattern attracts toner particles which are then transferred to paper. Semiconductor lasers have been a key enabler in the development of small and low cost desktop laser printers.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114453256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：