Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189003
Georg Hentsch, M. Tajmar
Electron sources are crucial for space technologies, protecting spacecraft electronics from ambient plasma and charged particles. This paper presents the development of compact field emission cathodes as alternatives to bulky hollow cathodes. A novel Radial Electron Emitter (REE) configuration is proposed, offering simplicity, scalability, and improved field enhancement. Experimental results show significantly lower turn-on fields in the radial array compared to planar designs. Increasing the emission area is suggested to enhance stability and overcome potential instabilities. The study highlights the significance of expanding the emission area for improved performance and demonstrates the potential of the REE for space applications.
{"title":"Development of CNT Cathodes for Space Applications","authors":"Georg Hentsch, M. Tajmar","doi":"10.1109/IVNC57695.2023.10189003","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189003","url":null,"abstract":"Electron sources are crucial for space technologies, protecting spacecraft electronics from ambient plasma and charged particles. This paper presents the development of compact field emission cathodes as alternatives to bulky hollow cathodes. A novel Radial Electron Emitter (REE) configuration is proposed, offering simplicity, scalability, and improved field enhancement. Experimental results show significantly lower turn-on fields in the radial array compared to planar designs. Increasing the emission area is suggested to enhance stability and overcome potential instabilities. The study highlights the significance of expanding the emission area for improved performance and demonstrates the potential of the REE for space applications.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123575335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188979
C. P. de Castro, T. A. de Assis, R. Rivelino, F. B. Mota, C. D. de Castilho, R. Forbes
We have demonstrated evidence that: (a) a constant characteristic induced field enhancement factor (FEF) can be determined from ab initio density functional theory (DFT) calculations on carbon nanotubes; and (b) this FEF adequately describes the real tunneling barrier. We have confirmed this finding in capped (6,6) armchair, (10,0) zigzag and (10,5) single walled carbon nanotubes (SWCNTs). In all these cases, we have verified that the characteristic local induced field enhancement factor (LIFEF) does not significantly depend on the macroscopic applied field. This establishes the LIFEF as a field-independent characterization parameter for nano-emitters.
{"title":"Evidence for a Field-Independent Enhancement Factor in the Real Tunneling Potential Barrier of Nanotube Emitters","authors":"C. P. de Castro, T. A. de Assis, R. Rivelino, F. B. Mota, C. D. de Castilho, R. Forbes","doi":"10.1109/IVNC57695.2023.10188979","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188979","url":null,"abstract":"We have demonstrated evidence that: (a) a constant characteristic induced field enhancement factor (FEF) can be determined from ab initio density functional theory (DFT) calculations on carbon nanotubes; and (b) this FEF adequately describes the real tunneling barrier. We have confirmed this finding in capped (6,6) armchair, (10,0) zigzag and (10,5) single walled carbon nanotubes (SWCNTs). In all these cases, we have verified that the characteristic local induced field enhancement factor (LIFEF) does not significantly depend on the macroscopic applied field. This establishes the LIFEF as a field-independent characterization parameter for nano-emitters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125220814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188975
Jinho Choi, Hanna Lee, Junho Yu, A. Gupta, Mrinal Bhusal Sharma, Jaekyu Jang, Jaeik Jung, Won Jung Lee, S. Yeo, M. Kong, J. Ryu
This study reports the synthesis of carbon nanotubes (CNTs) using induction heating technology as a rapid, clean, and inexpensive method. CNTs were synthesized on a metal alloy substrate. The CNTs growth were purposed to optimize by controlling work pressure, growth temperature, and growth time in the high vacuum chamber with induction heater. The CNTs were characterized by scanning electron microscope (SEM) for surface analysis and field emission properties were measured. Compared to traditional thermal chemical vapor deposition (CVD) synthesis methods with graphite heater, induction heating technology offers a more efficient and practical alternative for producing CNTs with potential applications in various fields.
{"title":"Efficient Synthesis of High-Quality Carbon Nanotubes Using Induction Heating Technology","authors":"Jinho Choi, Hanna Lee, Junho Yu, A. Gupta, Mrinal Bhusal Sharma, Jaekyu Jang, Jaeik Jung, Won Jung Lee, S. Yeo, M. Kong, J. Ryu","doi":"10.1109/IVNC57695.2023.10188975","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188975","url":null,"abstract":"This study reports the synthesis of carbon nanotubes (CNTs) using induction heating technology as a rapid, clean, and inexpensive method. CNTs were synthesized on a metal alloy substrate. The CNTs growth were purposed to optimize by controlling work pressure, growth temperature, and growth time in the high vacuum chamber with induction heater. The CNTs were characterized by scanning electron microscope (SEM) for surface analysis and field emission properties were measured. Compared to traditional thermal chemical vapor deposition (CVD) synthesis methods with graphite heater, induction heating technology offers a more efficient and practical alternative for producing CNTs with potential applications in various fields.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126134703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188992
F. F. Dall’Agnol, T. A. de Assis, S. Filippov
We promote a Catalog of Isolated Field Emitters (CIFE) containing a few parameters, from which it is possible to readily extract the IxE curves from a given type of isolated emitter [Hemisphere on cylindrical post (HCP), Hemi-Ellipsoid on plane (HEP), Hemisphere on cone (HSoC), etc].
{"title":"Minimal Parameters to Predict the Theoretical Emission Current vs. Field Curves","authors":"F. F. Dall’Agnol, T. A. de Assis, S. Filippov","doi":"10.1109/IVNC57695.2023.10188992","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188992","url":null,"abstract":"We promote a Catalog of Isolated Field Emitters (CIFE) containing a few parameters, from which it is possible to readily extract the IxE curves from a given type of isolated emitter [Hemisphere on cylindrical post (HCP), Hemi-Ellipsoid on plane (HEP), Hemisphere on cone (HSoC), etc].","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129943406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188954
A. T. Priyoti, Ragib Ahsan, Hyun Uk Chae, J. S. Vazquez, Subrata Das, R. Kapadia
The application of negative electron affinity (NEA) photocathodes as high-frequency and high external quantum efficiency electron emission sources has gained attention due to their potential benefits in various fields, including but not limited to electronics, materials science, and microscopy. NEA photocathodes have been achieved by depositing a Cs/O surface layer on GaAs or other semiconductors [1], [2]. These devices have limited stability and require ultra-high vacuum, cluster tools for deposition and short lifetimes. To overcome these limitations, this work proposes the use of a silicon-insulator-graphene structure, Hot Electron Laser Assisted Cathode (HELAC), which is electronically tunable, air-stable, and can mimic a NEA surface under certain bias conditions. The devices explored here have exhibited an emission current of $sim 20mu mathrm{A}$ under red light illumination, corresponding to a current density of 3.2 A/m2 and an external quantum efficiency (EQE) of 0.2%. In this paper, we have described the semiconductor device physics of this device and identified approaches to improve the photocathode performance.
负电子亲和(NEA)光电阴极作为高频、高外量子效率的电子发射源，由于其在包括但不限于电子学、材料科学和显微镜等各个领域的潜在效益而受到关注。NEA光电阴极是通过在GaAs或其他半导体上沉积Cs/O表面层来实现的[1]，[2]。这些设备的稳定性有限，需要超高真空、簇状沉积工具，使用寿命短。为了克服这些限制，这项工作提出使用硅-绝缘体-石墨烯结构，热电子激光辅助阴极(HELAC)，它是电子可调谐的，空气稳定的，并且可以在某些偏置条件下模拟NEA表面。该器件在红光照射下的发射电流为$sim 20mu mathrm{A}$，对应于电流密度为3.2 a /m2，外部量子效率(EQE)为0.2%. In this paper, we have described the semiconductor device physics of this device and identified approaches to improve the photocathode performance.
{"title":"An Air Stable, Electronically Tunable Negative Electron Affinity Silicon Photocathode","authors":"A. T. Priyoti, Ragib Ahsan, Hyun Uk Chae, J. S. Vazquez, Subrata Das, R. Kapadia","doi":"10.1109/IVNC57695.2023.10188954","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188954","url":null,"abstract":"The application of negative electron affinity (NEA) photocathodes as high-frequency and high external quantum efficiency electron emission sources has gained attention due to their potential benefits in various fields, including but not limited to electronics, materials science, and microscopy. NEA photocathodes have been achieved by depositing a Cs/O surface layer on GaAs or other semiconductors [1], [2]. These devices have limited stability and require ultra-high vacuum, cluster tools for deposition and short lifetimes. To overcome these limitations, this work proposes the use of a silicon-insulator-graphene structure, Hot Electron Laser Assisted Cathode (HELAC), which is electronically tunable, air-stable, and can mimic a NEA surface under certain bias conditions. The devices explored here have exhibited an emission current of $sim 20mu mathrm{A}$ under red light illumination, corresponding to a current density of 3.2 A/m2 and an external quantum efficiency (EQE) of 0.2%. In this paper, we have described the semiconductor device physics of this device and identified approaches to improve the photocathode performance.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130481789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189006
Georg Hentsch, M. Tajmar, V. Weihnacht
Diamond and diamond-like carbon (DLC) have potential as next-generation cathode materials due to their exceptional electron-emitting properties. The Fraunhofer Institute for Material and Beam Technology IWS Dresden has fabricated novel metal-doped DLC layers with remarkable conductivity and a nanostructured surface, which present promising prospects for practical applications. We conducted an extensive investigation of the field emission characteristics of these DLC layers using a spherical anode, and comparatively measured conventional DLC coatings. Field emission measurements show unexpected results, with the best emission properties observed in high-resistance DLC layers. Our findings suggest the possibility of fabricating quite efficient DLC emitters by activating large areas of ta-C layers.
{"title":"Field Emission Properties of Highly Conductive Diamond-Like Carbon Layers","authors":"Georg Hentsch, M. Tajmar, V. Weihnacht","doi":"10.1109/IVNC57695.2023.10189006","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189006","url":null,"abstract":"Diamond and diamond-like carbon (DLC) have potential as next-generation cathode materials due to their exceptional electron-emitting properties. The Fraunhofer Institute for Material and Beam Technology IWS Dresden has fabricated novel metal-doped DLC layers with remarkable conductivity and a nanostructured surface, which present promising prospects for practical applications. We conducted an extensive investigation of the field emission characteristics of these DLC layers using a spherical anode, and comparatively measured conventional DLC coatings. Field emission measurements show unexpected results, with the best emission properties observed in high-resistance DLC layers. Our findings suggest the possibility of fabricating quite efficient DLC emitters by activating large areas of ta-C layers.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126326864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188977
U. Jeong, Ghiyuun Kang, Seungho Lee, Sanghyun Yoon, Jaehyun Ahn, Jaeil Lee, Ilung Kim
Our team has created a Spindt field emitter array X-ray tube that can operate efficiently over a wide range of anode biases, from 30-160kV. This tube uses a cold cathode that is fabricated on a silicon wafer with a 200 nm design rule, allowing for operation at a gate voltage below 35V. The cold cathode demonstrates current-voltage characteristics that are largely unaffected by anode biases. The tube's multi-energy X-ray chromatic scanning capability offers an added benefit of material identification, in addition to its native ability to perform stationary CT scans.
{"title":"Revolutionizing X-Ray Imaging: Spindt Field Emitter Tube with Chromatic Scan Capability Across Wide Voltage Range (30-160KV)","authors":"U. Jeong, Ghiyuun Kang, Seungho Lee, Sanghyun Yoon, Jaehyun Ahn, Jaeil Lee, Ilung Kim","doi":"10.1109/IVNC57695.2023.10188977","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188977","url":null,"abstract":"Our team has created a Spindt field emitter array X-ray tube that can operate efficiently over a wide range of anode biases, from 30-160kV. This tube uses a cold cathode that is fabricated on a silicon wafer with a 200 nm design rule, allowing for operation at a gate voltage below 35V. The cold cathode demonstrates current-voltage characteristics that are largely unaffected by anode biases. The tube's multi-energy X-ray chromatic scanning capability offers an added benefit of material identification, in addition to its native ability to perform stationary CT scans.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115771031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188953
C. Holland, D. Whaley, P. Schwoebel, C. Bellew, C. Spindt
We report ongoing development of a high-current (100 mA), low-emittance (< 0.5 mm-mrad) Spindt-type field emitter cathode for electron beam generation in mm-wave radio frequency (RF) microwave devices. These efforts include device modeling, design, fabrication, and beam profile characterization of a self-focused emitter array. We developed a pepperpot emittance characterization tool to characterize the emittance properties. To date we have demonstrated emission in excess of 80 mA from these cathodes when operating in an unfocused mode. Issues of breakdown between the gate and focus electrode in our early devices have limited measurements on the transverse emittance to < 0.5 mm-mrad at a current of 0.1 mA at 10 keV.
{"title":"Development of a Self Focused Spindt Cathode for Millimeter-Wave Traveling Wave Tubes","authors":"C. Holland, D. Whaley, P. Schwoebel, C. Bellew, C. Spindt","doi":"10.1109/IVNC57695.2023.10188953","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188953","url":null,"abstract":"We report ongoing development of a high-current (100 mA), low-emittance (< 0.5 mm-mrad) Spindt-type field emitter cathode for electron beam generation in mm-wave radio frequency (RF) microwave devices. These efforts include device modeling, design, fabrication, and beam profile characterization of a self-focused emitter array. We developed a pepperpot emittance characterization tool to characterize the emittance properties. To date we have demonstrated emission in excess of 80 mA from these cathodes when operating in an unfocused mode. Issues of breakdown between the gate and focus electrode in our early devices have limited measurements on the transverse emittance to < 0.5 mm-mrad at a current of 0.1 mA at 10 keV.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132421409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188966
Jinho Choi, Hanna Lee, Junho Yu, A. Gupta, Mrinal Bhusal Sharma, Jaekyu Jang, Jaeik Jung, Won Jung Lee, S. Yeo, Seung Hoon Kim, M. Kong, J. Ryu
This study explores the potential of using a multi-beam system with carbon nanotubes (CNTs) as field emission X-ray sources for next-generation medical and industrial imaging and diagnosis techniques like tomosynthesis. CNTs' ability to withstand high temperatures and digital properties make them ideal for the multi-beam system. Using the multi-beam system with multiple CNT X-ray tubes can achieve faster image acquisition, reduced patient dose, and 3D reconstructed image. Overall, this study demonstrates the need and the advantages of using a multi-beam system with CNT-based X-ray sources for advanced imaging and therapy techniques.
{"title":"Design and Characterization of a Medical Multi-Beam System with Directly Grown CNT Field Emission Emitters","authors":"Jinho Choi, Hanna Lee, Junho Yu, A. Gupta, Mrinal Bhusal Sharma, Jaekyu Jang, Jaeik Jung, Won Jung Lee, S. Yeo, Seung Hoon Kim, M. Kong, J. Ryu","doi":"10.1109/IVNC57695.2023.10188966","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188966","url":null,"abstract":"This study explores the potential of using a multi-beam system with carbon nanotubes (CNTs) as field emission X-ray sources for next-generation medical and industrial imaging and diagnosis techniques like tomosynthesis. CNTs' ability to withstand high temperatures and digital properties make them ideal for the multi-beam system. Using the multi-beam system with multiple CNT X-ray tubes can achieve faster image acquisition, reduced patient dose, and 3D reconstructed image. Overall, this study demonstrates the need and the advantages of using a multi-beam system with CNT-based X-ray sources for advanced imaging and therapy techniques.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125365788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189023
A. Gupta, Jinho Choi, Jong-Wook Lim, Mrinal Sharma Bhusal, Jaeik Jung, S. Yeo, Ahn Jeung Sun, Jehwang Ryu
We present a novel back-front double-gated triode electron gun (E-gun) structure that incorporates a 3D carbon nanotube (CNT) emitter. The E-gun includes three macro-size metal honeycomb meshes, with two serving as gates and one as a cathode, with directly grown CNTs on its surface. By biasing the two double gates simultaneously, a DC current of over 4.28 mA was achieved, almost double compared to the collective current when each gate was biased individually. This increase in current is attributed to the unique design of the E-gun structure, which allows maximum participation of CNTs and is also confirmed by the simulation.
{"title":"A Novel Back-Front Double-Gated Field Emission Electron Gun Using 3D CNT Emitters for X-Ray Source","authors":"A. Gupta, Jinho Choi, Jong-Wook Lim, Mrinal Sharma Bhusal, Jaeik Jung, S. Yeo, Ahn Jeung Sun, Jehwang Ryu","doi":"10.1109/IVNC57695.2023.10189023","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189023","url":null,"abstract":"We present a novel back-front double-gated triode electron gun (E-gun) structure that incorporates a 3D carbon nanotube (CNT) emitter. The E-gun includes three macro-size metal honeycomb meshes, with two serving as gates and one as a cathode, with directly grown CNTs on its surface. By biasing the two double gates simultaneously, a DC current of over 4.28 mA was achieved, almost double compared to the collective current when each gate was biased individually. This increase in current is attributed to the unique design of the E-gun structure, which allows maximum participation of CNTs and is also confirmed by the simulation.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125263207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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