Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188969
J. Hecla, Dufan Wu, A. Cramer, Tim A. Moulton, A. Gupta, Kai Yang, Wolfgang Krull, Rajiv Gupta
Computed tomography (CT) is the preferred imaging modality for severely injured patients in civilian trauma centers and military medical care. However, most people outside of major hospitals cannot afford or have access to CT systems because of their size, weight, and power-requirements. This research effort aims to enable advanced imaging in far forward locations for acute management of severely injured casualties and during episodes of delayed or protracted evacuation by developing a static, modular, and portable CT scanner that can be deployed across the full spectrum of care.
{"title":"A Modular, Portable and Static Computed Tomography System for Resource-Constrained Environment","authors":"J. Hecla, Dufan Wu, A. Cramer, Tim A. Moulton, A. Gupta, Kai Yang, Wolfgang Krull, Rajiv Gupta","doi":"10.1109/IVNC57695.2023.10188969","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188969","url":null,"abstract":"Computed tomography (CT) is the preferred imaging modality for severely injured patients in civilian trauma centers and military medical care. However, most people outside of major hospitals cannot afford or have access to CT systems because of their size, weight, and power-requirements. This research effort aims to enable advanced imaging in far forward locations for acute management of severely injured casualties and during episodes of delayed or protracted evacuation by developing a static, modular, and portable CT scanner that can be deployed across the full spectrum of care.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124965252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189016
Ketan Bhotkar, Y. Yu, Bishwa Chandra Adhikari, K. Park
The purpose of this study was to evaluate the effect of electrical aging on the cold cathode electron beam (C-beam). This experiment is performed by the vertically aligned carbon nanotube in which it is established that the applied bias for efficient electrical aging and defined the bias voltage as the voltage at which joule heating occurred. A long-term stable field electron emission from carbon nanotube arrays can be achieved through an aging process at high emission current. Additionally, x-ray imaging and dose measurement were used to assess the Focal Spot Size (FSS) of the tungsten cross wire used as a standard resolution testing object (EN 12543–5). We found that the aging had no significant effect on the FSS, but the x-ray dose rate enhanced from 0.45 mGy/sec to 1.1 mGy/sec.
{"title":"Effect of Electrical Aging of Cold Cathode C-Beam on Focal Spot Size and X-Ray Dose","authors":"Ketan Bhotkar, Y. Yu, Bishwa Chandra Adhikari, K. Park","doi":"10.1109/IVNC57695.2023.10189016","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189016","url":null,"abstract":"The purpose of this study was to evaluate the effect of electrical aging on the cold cathode electron beam (C-beam). This experiment is performed by the vertically aligned carbon nanotube in which it is established that the applied bias for efficient electrical aging and defined the bias voltage as the voltage at which joule heating occurred. A long-term stable field electron emission from carbon nanotube arrays can be achieved through an aging process at high emission current. Additionally, x-ray imaging and dose measurement were used to assess the Focal Spot Size (FSS) of the tungsten cross wire used as a standard resolution testing object (EN 12543–5). We found that the aging had no significant effect on the FSS, but the x-ray dose rate enhanced from 0.45 mGy/sec to 1.1 mGy/sec.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122799434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188999
John W Simonaitis, M. Krielaart, Stewart A. Koppell, B. Slayton, Joseph Alongi, W. Putnam, K. Berggren, P. Keathley
In this work, we describe a testbed for studying free-electron photon interactions in a 1 to 20-keV scanning electron microscope. The setup includes an ultrafast emitter, optical modulators for structuring the electron beam, a nanostructured interaction zone, and electron and optical spectrometers with time-tagging electronics to characterize these interactions. Through this work we aim to understand these interactions at electron energies orders-of-magnitude lower than used in most previous work, enabling their more widespread adoption and potentially leading to chip-scale technologies.
{"title":"Electron-Photon Interactions in a Scanning Electron Microscope","authors":"John W Simonaitis, M. Krielaart, Stewart A. Koppell, B. Slayton, Joseph Alongi, W. Putnam, K. Berggren, P. Keathley","doi":"10.1109/IVNC57695.2023.10188999","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188999","url":null,"abstract":"In this work, we describe a testbed for studying free-electron photon interactions in a 1 to 20-keV scanning electron microscope. The setup includes an ultrafast emitter, optical modulators for structuring the electron beam, a nanostructured interaction zone, and electron and optical spectrometers with time-tagging electronics to characterize these interactions. Through this work we aim to understand these interactions at electron energies orders-of-magnitude lower than used in most previous work, enabling their more widespread adoption and potentially leading to chip-scale technologies.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131206547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188885
Adina R. Bechhofer, S. Nirantar, L. Daniel, K. Berggren, P. Keathley
We developed a simple lumped-element circuit model for a resonant vacuum nanoantenna driven by beyond 100 THz optical excitations. The circuit model was implemented in SPICE for fast, easy, and accessible simulation of integrated optical-frequency-nanoantenna circuits. We also designed and simulated an ultrafast memory cell with read and write functions. Our work demonstrates that vacuum nanoantennas can enable logic and memory operations at beyond 100 THz frequencies.
{"title":"Circuit Model for Nanoscale Optical Frequency Electronics","authors":"Adina R. Bechhofer, S. Nirantar, L. Daniel, K. Berggren, P. Keathley","doi":"10.1109/IVNC57695.2023.10188885","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188885","url":null,"abstract":"We developed a simple lumped-element circuit model for a resonant vacuum nanoantenna driven by beyond 100 THz optical excitations. The circuit model was implemented in SPICE for fast, easy, and accessible simulation of integrated optical-frequency-nanoantenna circuits. We also designed and simulated an ultrafast memory cell with read and write functions. Our work demonstrates that vacuum nanoantennas can enable logic and memory operations at beyond 100 THz frequencies.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134362967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188971
R. Asadi, T. Zheng, G. Rughoobur, R. Bhattacharya, J. Browning, A. Akinwande, B. Gnade
The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10−10 Torr before 10–7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.
{"title":"Effect of O2 Exposure on Silicon Field Emitter Arrays Style","authors":"R. Asadi, T. Zheng, G. Rughoobur, R. Bhattacharya, J. Browning, A. Akinwande, B. Gnade","doi":"10.1109/IVNC57695.2023.10188971","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188971","url":null,"abstract":"The impact of Oxygen (O<inf>2</inf>) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10<sup>−10</sup> Torr before 10–<sup>7</sup> Torr partial pressure of O<inf>2</inf> was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O<inf>2</inf> exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"310 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115910765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188980
P. Vincent, F. Panciera, I. Florea, Costel Sorin Cojocaru, S. Perisanu, A. Ayari, J. Chaste, P. Legagneux, S. Purcell
Here we present the effect of electric fields on the synthesis of carbon nanotubes (CNTs) and the FE performances of these CNTs. Novel growths and FE measurements were observed in real-time in an environmental transmission electron microscope (ETEM). Individual nanotubes are easily resolved as they appear as extremely straight lines growing parallel to the electric field lines. They are predominantly Single Wall CNTs (SWNT). Growth could be stopped to perform in-situ FE experiments without venting thus allowing the complete evolution of the CNTs to be monitored. This allows important progress in understanding the different destruction mechanisms responsible for the limitations of CNT cathodes.
{"title":"In-Situ Direct Observation of Carbon Nanotube Synthesis Under Electric Field and Their Field Emission Performance","authors":"P. Vincent, F. Panciera, I. Florea, Costel Sorin Cojocaru, S. Perisanu, A. Ayari, J. Chaste, P. Legagneux, S. Purcell","doi":"10.1109/IVNC57695.2023.10188980","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188980","url":null,"abstract":"Here we present the effect of electric fields on the synthesis of carbon nanotubes (CNTs) and the FE performances of these CNTs. Novel growths and FE measurements were observed in real-time in an environmental transmission electron microscope (ETEM). Individual nanotubes are easily resolved as they appear as extremely straight lines growing parallel to the electric field lines. They are predominantly Single Wall CNTs (SWNT). Growth could be stopped to perform in-situ FE experiments without venting thus allowing the complete evolution of the CNTs to be monitored. This allows important progress in understanding the different destruction mechanisms responsible for the limitations of CNT cathodes.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122995332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188949
D. Burda, Mohammad M. Allaham, M. Horáček, A. Knápek
We report a fabrication method of multilayer coating of single tip field emitters. Tungsten field emitters coated with a multilayer of refractory oxides such as Al2O3, HfO2, which act as an additional potential barrier in the metal-vacuum system. Introducing additional barriers to the emitter's metal vacuum interface system can alter its emission characteristics. Thin oxide barriers were prepared using a recipe that involved the use of low-temperature atomic layer deposition. The parameters of the grown layers were studied by local electron atom probe tomography, field ion microscopy, and scanning transmission microscopy.
{"title":"Study of Dielectric Nanolayers and Multilayer Coated Emitters","authors":"D. Burda, Mohammad M. Allaham, M. Horáček, A. Knápek","doi":"10.1109/IVNC57695.2023.10188949","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188949","url":null,"abstract":"We report a fabrication method of multilayer coating of single tip field emitters. Tungsten field emitters coated with a multilayer of refractory oxides such as Al2O3, HfO2, which act as an additional potential barrier in the metal-vacuum system. Introducing additional barriers to the emitter's metal vacuum interface system can alter its emission characteristics. Thin oxide barriers were prepared using a recipe that involved the use of low-temperature atomic layer deposition. The parameters of the grown layers were studied by local electron atom probe tomography, field ion microscopy, and scanning transmission microscopy.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114955829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189010
D. K. Bowen, James D. Cameron, Conrad J Dirckx, Paul Edwards, M. Fohler, Isabel Gomes, A. Mavalankar, S. Phillips, Kate L. Renforth, Steven P. Richards, V. Soloviev, S. Sottini, Alexis Tello Valero, Nivedita Yumnam, S. G. Wells
A stationary array of X-ray emitters based on electron field emission from silicon tips has been used to create an orthopaedic medical imaging device for digital tomosynthesis. Recent progress in the development of field emitters, in terms of uniformity and power output, by refining the fabrication process has resulted in an X-ray source performing at comparable X-ray dose level and image quality as standard 2D radiology, but with the addition of depth resolution, usually only available in large, immobile devices such as CT scanners. Depth information increases diagnostic capability, which is otherwise hampered by the overlapping bony structures in conventional 2D images. The orthopaedic medical imaging device has recently received US FDA 510(K) clearance.
{"title":"Application of a Novel Addressable-Array X-Ray Source to Medical Imaging of Extremeties","authors":"D. K. Bowen, James D. Cameron, Conrad J Dirckx, Paul Edwards, M. Fohler, Isabel Gomes, A. Mavalankar, S. Phillips, Kate L. Renforth, Steven P. Richards, V. Soloviev, S. Sottini, Alexis Tello Valero, Nivedita Yumnam, S. G. Wells","doi":"10.1109/IVNC57695.2023.10189010","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189010","url":null,"abstract":"A stationary array of X-ray emitters based on electron field emission from silicon tips has been used to create an orthopaedic medical imaging device for digital tomosynthesis. Recent progress in the development of field emitters, in terms of uniformity and power output, by refining the fabrication process has resulted in an X-ray source performing at comparable X-ray dose level and image quality as standard 2D radiology, but with the addition of depth resolution, usually only available in large, immobile devices such as CT scanners. Depth information increases diagnostic capability, which is otherwise hampered by the overlapping bony structures in conventional 2D images. The orthopaedic medical imaging device has recently received US FDA 510(K) clearance.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122639279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188950
Mikael Rinne, Salvador Barranco Cárceles, Veronika Zadin, A. Mavalankar, I. Underwood, A. Kyritsakis
We present an online calculation tool that aspires to become the standard method of the field emission community for calculating emission characteristics and analyzing current-voltage (I-V) measurements. Our model is applicable to both metal and semiconductor emitters, considering nanometric curvatures and thermal-field emission. Our tool is developed in the form of a web application (https://getelec.org), which can be used to easily calculate the current density, Nottingham heat, electron spectra, and analyze I-V data.
{"title":"An Online Tool for Thermal-Field Emission Calculations from Metal and Semiconducting Emitters","authors":"Mikael Rinne, Salvador Barranco Cárceles, Veronika Zadin, A. Mavalankar, I. Underwood, A. Kyritsakis","doi":"10.1109/IVNC57695.2023.10188950","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188950","url":null,"abstract":"We present an online calculation tool that aspires to become the standard method of the field emission community for calculating emission characteristics and analyzing current-voltage (I-V) measurements. Our model is applicable to both metal and semiconductor emitters, considering nanometric curvatures and thermal-field emission. Our tool is developed in the form of a web application (https://getelec.org), which can be used to easily calculate the current density, Nottingham heat, electron spectra, and analyze I-V data.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"432 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115956426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188993
Lei Luo, Yan Shen, Dong Han, Xiaoyu Qin, Junzhong Liang, Baohong Li, Yu Zhang, S. Deng
Ultrawide bandgap (UWBG) semiconductor luminescence pumped by electron beam (EB) is a feasible strategy to achieve high-performance deep ultraviolet (DUV) source device. In this study, by optimizing the carbon nanotubes (CNTs) nano-cold cathode array in a proposed EB-pumped DUV device, we achieved enhanced cathode electron emission efficiency and then improved the light emitting intensity. The CNTs were designed into different geometric patterns and arrangements, and then were fabricated out by a high energy laser etching method. After transferred onto the cold cathode, the field emission properties of the optimized CNTs array were demonstrated to be improved, thus will further improve the luminescence performance of the DUV light source device when the CNTs act as an excitation source.
{"title":"Study on Optimazation of Carbon Nanotube Nano-Cold Cathode Array for an Electron Beam Pumping Ultraviolet Light Emitting Device","authors":"Lei Luo, Yan Shen, Dong Han, Xiaoyu Qin, Junzhong Liang, Baohong Li, Yu Zhang, S. Deng","doi":"10.1109/IVNC57695.2023.10188993","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188993","url":null,"abstract":"Ultrawide bandgap (UWBG) semiconductor luminescence pumped by electron beam (EB) is a feasible strategy to achieve high-performance deep ultraviolet (DUV) source device. In this study, by optimizing the carbon nanotubes (CNTs) nano-cold cathode array in a proposed EB-pumped DUV device, we achieved enhanced cathode electron emission efficiency and then improved the light emitting intensity. The CNTs were designed into different geometric patterns and arrangements, and then were fabricated out by a high energy laser etching method. After transferred onto the cold cathode, the field emission properties of the optimized CNTs array were demonstrated to be improved, thus will further improve the luminescence performance of the DUV light source device when the CNTs act as an excitation source.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121137890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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