Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189001
M. Hausladen, P. Buchner, A. Schels, S. Edler, M. Bachmann, R. Schreiner
A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm2, With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation.
{"title":"An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology","authors":"M. Hausladen, P. Buchner, A. Schels, S. Edler, M. Bachmann, R. Schreiner","doi":"10.1109/IVNC57695.2023.10189001","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189001","url":null,"abstract":"A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm2, With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134414276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189012
Sergey Filippov, A. G. Kolosko, E. O. Popov
A universal formula that describes the functional dependence of the emission area on the applied voltage, taking into account the shape of the emitter tip is proposed. The advantage of using the new semi-logarithmic coordinates ${}^{primeprime}mathrm{k}$ -power plot” for the current-voltage characteristic (IVC) processing is shown. The processing of local IVCs obtained by the method of post-processing of the emission patterns of a large-area nanocomposite emitter has been processed. The diagram “apex radius / effective height” for local emission sites has been obtained. A shift in the effective height of individual emission centers with a reduced current load, which is associated with an increase in their work function, has been found.
{"title":"Advantages of K-Power Plot for Experimental IVC Processing","authors":"Sergey Filippov, A. G. Kolosko, E. O. Popov","doi":"10.1109/IVNC57695.2023.10189012","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189012","url":null,"abstract":"A universal formula that describes the functional dependence of the emission area on the applied voltage, taking into account the shape of the emitter tip is proposed. The advantage of using the new semi-logarithmic coordinates ${}^{primeprime}mathrm{k}$ -power plot” for the current-voltage characteristic (IVC) processing is shown. The processing of local IVCs obtained by the method of post-processing of the emission patterns of a large-area nanocomposite emitter has been processed. The diagram “apex radius / effective height” for local emission sites has been obtained. A shift in the effective height of individual emission centers with a reduced current load, which is associated with an increase in their work function, has been found.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134212618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188948
M. Krysztof, M. Białas, T. Grzebyk
The article presents imaging results performed using a MEMS electron microscope setup. Three different electron detectors were developed and tested. The detectors integrated with a scanning octupole system were placed inside the JEOL JSM IT-100 SEM sample chamber. Using the SEM electron beam, the test images were obtained, confirming the usefulness of all three detectors. Moreover, a comparison between images obtained using the JEOL microscope and MEMS EM setup is presented.
{"title":"Imaging Using Mems Electron Microscope","authors":"M. Krysztof, M. Białas, T. Grzebyk","doi":"10.1109/IVNC57695.2023.10188948","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188948","url":null,"abstract":"The article presents imaging results performed using a MEMS electron microscope setup. Three different electron detectors were developed and tested. The detectors integrated with a scanning octupole system were placed inside the JEOL JSM IT-100 SEM sample chamber. Using the SEM electron beam, the test images were obtained, confirming the usefulness of all three detectors. Moreover, a comparison between images obtained using the JEOL microscope and MEMS EM setup is presented.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131962434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188978
M. Chowdhury, Jeff F. Young, G. Sawatzky, A. Nojeh
We have developed a thermal radiation (blackbody emission) hyperspectroscopy apparatus with a spectral range of ~ 1–7 µm and a spatial resolution of ~10 µm, with the sample held in an ultra-high vacuum chamber. This system enables the detailed analysis of thermal photon emission from nanomaterials/structures and temperature mapping up to thermionic electron emission temperatures under high thermal gradients and with high spectral fidelity. It is thus a useful characterization tool for studying the role of low-dimensional physics in thermal transport and emission and related phenomena such as heat localization in nanotubes.
{"title":"Broadband Infrared Hyperspectroscopy with High Spatial Resolution for the Study of Nanoscale Thermal Emitters in Vacuum","authors":"M. Chowdhury, Jeff F. Young, G. Sawatzky, A. Nojeh","doi":"10.1109/IVNC57695.2023.10188978","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188978","url":null,"abstract":"We have developed a thermal radiation (blackbody emission) hyperspectroscopy apparatus with a spectral range of ~ 1–7 µm and a spatial resolution of ~10 µm, with the sample held in an ultra-high vacuum chamber. This system enables the detailed analysis of thermal photon emission from nanomaterials/structures and temperature mapping up to thermionic electron emission temperatures under high thermal gradients and with high spectral fidelity. It is thus a useful characterization tool for studying the role of low-dimensional physics in thermal transport and emission and related phenomena such as heat localization in nanotubes.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"2390 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127477931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189007
Sergey Filippov, F. F. Dall’Agnol, T. A. de Assis, A. G. Kolosko, E. O. Popov
Electrostatic depolarization in clusters of emitters causes the emission to concentrate on the outer corners. However, ellipsoidal profiling of the heights can significantly homogenize the emitted current on the emitters. Here, we present three-dimensional analyses to improve the applicability of our previous two-dimensional clusters.
{"title":"Uniform Distribution of Individual Current in Cluster of Emitters","authors":"Sergey Filippov, F. F. Dall’Agnol, T. A. de Assis, A. G. Kolosko, E. O. Popov","doi":"10.1109/IVNC57695.2023.10189007","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189007","url":null,"abstract":"Electrostatic depolarization in clusters of emitters causes the emission to concentrate on the outer corners. However, ellipsoidal profiling of the heights can significantly homogenize the emitted current on the emitters. Here, we present three-dimensional analyses to improve the applicability of our previous two-dimensional clusters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121042902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188982
K. Jensen, J. Riga, A. Shabaev, M. Osofsky, J. Prestigiacomo, J. Petillo
The transmission coefficient for a 6-function barrier is a convenient model for many technologically important applications relying on photoemission, simulations of wave packets, or modeling the narrow barrier of a normal- superconducting point contact. We examine an extension of the model to treat instead a function sequence (a rectangular barrier that approaches the behavior of a function in the limit of vanishing width). It is shown how the eigenstates of the sequence converge on the function barrier eigenstates, but more importantly, how the even and odd parity states depart from the 6-function limiting case. The exact eigenstates enable the time evolution of exponentially attenuated tunneling to be exactly evaluated, in contrast to numerical methods. The application is the inclusion of tunneling time effects in simulations of time-varying electron emission.
{"title":"A Delta Barrier in a Well and its Generalization for Emission Studies","authors":"K. Jensen, J. Riga, A. Shabaev, M. Osofsky, J. Prestigiacomo, J. Petillo","doi":"10.1109/IVNC57695.2023.10188982","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188982","url":null,"abstract":"The transmission coefficient for a 6-function barrier is a convenient model for many technologically important applications relying on photoemission, simulations of wave packets, or modeling the narrow barrier of a normal- superconducting point contact. We examine an extension of the model to treat instead a function sequence (a rectangular barrier that approaches the behavior of a function in the limit of vanishing width). It is shown how the eigenstates of the sequence converge on the function barrier eigenstates, but more importantly, how the even and odd parity states depart from the 6-function limiting case. The exact eigenstates enable the time evolution of exponentially attenuated tunneling to be exactly evaluated, in contrast to numerical methods. The application is the inclusion of tunneling time effects in simulations of time-varying electron emission.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125925560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189005
Salvador Barranco Cárceles, A. Kyritsakis, Veronika Zadin, A. Mavalankar, I. Underwood
We have developed the first simulation tool to calculate field emission and its thermal effects from semiconducting surfaces. Our simulation tool returns the total emitted current from the emitter, the emitter's temperature, and the band structure at any point of the emitter for any arbitrary geometry.
{"title":"Simulation of Semiconducting Field Emitters and its Thermal Effects","authors":"Salvador Barranco Cárceles, A. Kyritsakis, Veronika Zadin, A. Mavalankar, I. Underwood","doi":"10.1109/IVNC57695.2023.10189005","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189005","url":null,"abstract":"We have developed the first simulation tool to calculate field emission and its thermal effects from semiconducting surfaces. Our simulation tool returns the total emitted current from the emitter, the emitter's temperature, and the band structure at any point of the emitter for any arbitrary geometry.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126633972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-23DOI: 10.1109/IVNC57695.2023.10188958
R. Forbes, Sergey Filippov, A. G. Kolosko, E. O. Popov
This presentation is part of a long-term project to put field electron emission (FE) onto a better scientific basis, by seeking reliable quantitative agreement between theory and experiment, especially as regards emission-current values. The main paper aims are: (1) to respond to remarks made in recent papers [1], [2]; (2) to restate the thinking behind our 2022 methodology [3] for choosing between different FE models using experiments; (3) to assess progress; and (4) to make further suggestions about improved approaches.
{"title":"Progress on the Journey to Put Field Electron Emission Onto a Better Scientific Basis","authors":"R. Forbes, Sergey Filippov, A. G. Kolosko, E. O. Popov","doi":"10.1109/IVNC57695.2023.10188958","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188958","url":null,"abstract":"This presentation is part of a long-term project to put field electron emission (FE) onto a better scientific basis, by seeking reliable quantitative agreement between theory and experiment, especially as regards emission-current values. The main paper aims are: (1) to respond to remarks made in recent papers [1], [2]; (2) to restate the thinking behind our 2022 methodology [3] for choosing between different FE models using experiments; (3) to assess progress; and (4) to make further suggestions about improved approaches.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115731279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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