Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189020
Rudolf Haindl, Kerim Köster, John H. Gaida, Maximilian Franz, A. Feist, C. Ropers
We observe photoassisted cold field emission from a W(310) tip induced by tunable-wavelength low-power femtosecond laser excitation with photon energies Ø from 2.5 eV to 3.1 eV. The emission current from the apex of the (310)-oriented single-crystalline emitter is shown to linearly depend on incident laser power, while the effective work function is reduced by the respective photon energy.
{"title":"Linear Femtosecond Tunable-Wavelength Photoassisted Cold Field Emission","authors":"Rudolf Haindl, Kerim Köster, John H. Gaida, Maximilian Franz, A. Feist, C. Ropers","doi":"10.1109/IVNC57695.2023.10189020","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189020","url":null,"abstract":"We observe photoassisted cold field emission from a W(310) tip induced by tunable-wavelength low-power femtosecond laser excitation with photon energies Ø from 2.5 eV to 3.1 eV. The emission current from the apex of the (310)-oriented single-crystalline emitter is shown to linearly depend on incident laser power, while the effective work function is reduced by the respective photon energy.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188964
Rudolf Haindl, A. Feist, Till Domrose, Marcel Moller, S. Yalunin, C. Ropers
We report on the observation of Coulomb-correlated pair, triple, and quadruple free-electron states in a transmission electron microscope generated by femtosecond photoemission from a nanoscale field emitter. The electron number states exhibit energy and momentum correlations of about two electronvolts caused by strong acceleration-enhanced inter-particle energy exchange. State-sorted beam caustics reveal a longitudinal source increase and shift. We demonstrate electric-field control of transverse against energy correlations. In conjunction with apertures in the beam, this facilitates highly non-Poissonian electron beam statistics for microscopy and lithography. The high fidelity of few-electron state generation will open new experimental schemes for free-electron beams.
{"title":"Coulomb-Correlated Few-Electron States in a Transmission Electron Microscope Beam","authors":"Rudolf Haindl, A. Feist, Till Domrose, Marcel Moller, S. Yalunin, C. Ropers","doi":"10.1109/IVNC57695.2023.10188964","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188964","url":null,"abstract":"We report on the observation of Coulomb-correlated pair, triple, and quadruple free-electron states in a transmission electron microscope generated by femtosecond photoemission from a nanoscale field emitter. The electron number states exhibit energy and momentum correlations of about two electronvolts caused by strong acceleration-enhanced inter-particle energy exchange. State-sorted beam caustics reveal a longitudinal source increase and shift. We demonstrate electric-field control of transverse against energy correlations. In conjunction with apertures in the beam, this facilitates highly non-Poissonian electron beam statistics for microscopy and lithography. The high fidelity of few-electron state generation will open new experimental schemes for free-electron beams.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"55 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116612443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188882
J. Snelling, G. Werner, J. Cary
Large nanoscale vacuum channel transistor (NVCT) arrays are implemented in LTspice. An empirical warm-beam Child-Langmuir (CL) model is used to determine space charge limiting effects on transmitted current. The LTspice NVCT model is simulated in a Colpitts oscillator circuit. These results are compared to an LTspice NVCT model based on experimental measurements of a particular physical device [1]. The warm-beam CL model is used to demonstrate rapid exploration of different array and circuit parameters.
{"title":"Simulating Nanoscale Vacuum Channel Transistor Arrays in Ltspice Utilizing an Empirical Warm-Beam Child-Langmuir Model","authors":"J. Snelling, G. Werner, J. Cary","doi":"10.1109/IVNC57695.2023.10188882","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188882","url":null,"abstract":"Large nanoscale vacuum channel transistor (NVCT) arrays are implemented in LTspice. An empirical warm-beam Child-Langmuir (CL) model is used to determine space charge limiting effects on transmitted current. The LTspice NVCT model is simulated in a Colpitts oscillator circuit. These results are compared to an LTspice NVCT model based on experimental measurements of a particular physical device [1]. The warm-beam CL model is used to demonstrate rapid exploration of different array and circuit parameters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"683 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123052054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188879
Mike Chang, G. Sawatzky, A. Nojeh
We report an unexpectedly narrow energy distribution for thermal electron emission from yttrium oxide. Given the wide band gap of the material, electron transport and the observed excellent emission properties are puzzling. We present density functional theory simulations and explain the emission behavior based on the role of oxygen vacancies, which introduce narrow energy levels that may act as spatially localized electron emission sites. This approach may also help in understanding the working mechanism of other oxide cathodes.
{"title":"Oxide Electron Emitters: Thermionic Emission from Yttrium Oxide","authors":"Mike Chang, G. Sawatzky, A. Nojeh","doi":"10.1109/IVNC57695.2023.10188879","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188879","url":null,"abstract":"We report an unexpectedly narrow energy distribution for thermal electron emission from yttrium oxide. Given the wide band gap of the material, electron transport and the observed excellent emission properties are puzzling. We present density functional theory simulations and explain the emission behavior based on the role of oxygen vacancies, which introduce narrow energy levels that may act as spatially localized electron emission sites. This approach may also help in understanding the working mechanism of other oxide cathodes.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127616058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189013
N. Lubinsky, L. Velásquez-García
We report the design, fabrication, and characterization of novel, self-contained reflectron mass filters for compact mass spectrometry applications. A reflectron filters ions by mass-to-charge ratio via measuring the time-of-flight (TOF) of ions as they are reflected by the internal electromagnetic fields of the device, governed by the geometric constraints imposed. The devices are monolithically 3D-printed in glass-ceramic via vat photopolymerization. Experimental characterization of a fabricated prototype demonstrates the design can attain a mass resolution of about 41 Da for argon.
{"title":"3-D Printed, Compact, Time-of-Flight Reflectron Mass Filters","authors":"N. Lubinsky, L. Velásquez-García","doi":"10.1109/IVNC57695.2023.10189013","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189013","url":null,"abstract":"We report the design, fabrication, and characterization of novel, self-contained reflectron mass filters for compact mass spectrometry applications. A reflectron filters ions by mass-to-charge ratio via measuring the time-of-flight (TOF) of ions as they are reflected by the internal electromagnetic fields of the device, governed by the geometric constraints imposed. The devices are monolithically 3D-printed in glass-ceramic via vat photopolymerization. Experimental characterization of a fabricated prototype demonstrates the design can attain a mass resolution of about 41 Da for argon.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124466014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188962
Alex Kachkine, C. Owens, A. Hart, L. Velásquez-García
We report the first non-planar electron sources for electron projection lithography (EPL). Fabricated by 3D printing, the devices deliver confocal emission, achieving focusing and demagnification without needing electrostatic lenses. Emission is produced by a concave dish base with an array of carbon nanotube (CNT)-coated emitters aligned to the apertures of a concave extractor electrode; both are fabricated by vat photopolymerization 3D printing and modified by subsequent coatings. Our prototype device exhibits a startup voltage of 500 V, a peak emission current of 300 μA/cm2, and a field enhancement factor of 7.8×104 cm-1. Phosphor screen imaging of the devices in operation demonstrates that the emission is spatially uniform. This revolutionary paradigm enables compact design at industrially required emission specifications of next-generation lithography systems.
{"title":"3D-Printed, Non-Planar Electron Sources For Next-Generation Electron Projection Lithography","authors":"Alex Kachkine, C. Owens, A. Hart, L. Velásquez-García","doi":"10.1109/IVNC57695.2023.10188962","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188962","url":null,"abstract":"We report the first non-planar electron sources for electron projection lithography (EPL). Fabricated by 3D printing, the devices deliver confocal emission, achieving focusing and demagnification without needing electrostatic lenses. Emission is produced by a concave dish base with an array of carbon nanotube (CNT)-coated emitters aligned to the apertures of a concave extractor electrode; both are fabricated by vat photopolymerization 3D printing and modified by subsequent coatings. Our prototype device exhibits a startup voltage of 500 V, a peak emission current of 300 μA/cm2, and a field enhancement factor of 7.8×104 cm-1. Phosphor screen imaging of the devices in operation demonstrates that the emission is spatially uniform. This revolutionary paradigm enables compact design at industrially required emission specifications of next-generation lithography systems.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116506131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188951
Hanna Lee, Jinho Choi, A. Gupta, Jaekyu Jang, K. Yoon, J. Ryu
This study presents the design and characterization of a carbon nanotube (CNT)-based X-ray source. The physical and chemical properties of the directly synthesized CNT were thoroughly examined, and their field emission characteristics were confirmed. Furthermore, the functionality of the fabricated source was validated by acquiring the emitted dose using the digital drive mode at 160 kV. The results indicate that the developed CNT-based X-ray source holds significant promise for potential applications in the field of cell therapy.
{"title":"Advanced Radiation Source Based on Field Emission Electron Gun with Carbon Nanotubes","authors":"Hanna Lee, Jinho Choi, A. Gupta, Jaekyu Jang, K. Yoon, J. Ryu","doi":"10.1109/IVNC57695.2023.10188951","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188951","url":null,"abstract":"This study presents the design and characterization of a carbon nanotube (CNT)-based X-ray source. The physical and chemical properties of the directly synthesized CNT were thoroughly examined, and their field emission characteristics were confirmed. Furthermore, the functionality of the fabricated source was validated by acquiring the emitted dose using the digital drive mode at 160 kV. The results indicate that the developed CNT-based X-ray source holds significant promise for potential applications in the field of cell therapy.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121970141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188984
T. Kusunoki, N. Arai
We investigated the emission characteristics of a hafnium carbide: HfC(100) single crystal tip at various temperatures toward finding a candidate of next-generation emitters for scanning electron microscopes (SEMs). The emission mode changed from cold field emission (CFE) to thermal field emission (TFE) and finally to Schottky emission (SE). The energy width of the emitted electrons was 0.2 eV in CFE, which became larger in TFE and then small again in SE. The emission current noise was small except for high temperature TFE, and the emission had high stability in electron gun of the SEMs. The high monochromaticity and stable electron emission are suitable for high-resolution SEMs.
{"title":"Electron Emission from HFC(100) Tip at Various Temperatures","authors":"T. Kusunoki, N. Arai","doi":"10.1109/IVNC57695.2023.10188984","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188984","url":null,"abstract":"We investigated the emission characteristics of a hafnium carbide: HfC(100) single crystal tip at various temperatures toward finding a candidate of next-generation emitters for scanning electron microscopes (SEMs). The emission mode changed from cold field emission (CFE) to thermal field emission (TFE) and finally to Schottky emission (SE). The energy width of the emitted electrons was 0.2 eV in CFE, which became larger in TFE and then small again in SE. The emission current noise was small except for high temperature TFE, and the emission had high stability in electron gun of the SEMs. The high monochromaticity and stable electron emission are suitable for high-resolution SEMs.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115132932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188997
P. Szyszka, Jakub Jendryka, Jan Sobków, Michał Zychla, M. Białas, P. Knapkiewicz, J. Dziuban, T. Grzebyk
This paper presents a novel approach to the development of a MEMS-based Quadrupole Mass Spectrometer. The instrument consists of a 3D-printed, compact chip-like package containing MEMS components required to perform the gas analysis. Obtained mass range between 1 and 150 u and a resolution of 45, makes it ideal for a range of applications which does not require high-end performance. Our work demonstrates that MEMS technology in conjunction with novel 3Dp fabrication techniques offers a feasible route to developing compact mass spectrometers, providing an opportunity for researchers to create portable, yet potent instruments for a range of applications, opening new possibilities for on-site, real-time analysis in many different fields.
{"title":"Mems Quadrupole Mass Spectrometer","authors":"P. Szyszka, Jakub Jendryka, Jan Sobków, Michał Zychla, M. Białas, P. Knapkiewicz, J. Dziuban, T. Grzebyk","doi":"10.1109/IVNC57695.2023.10188997","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188997","url":null,"abstract":"This paper presents a novel approach to the development of a MEMS-based Quadrupole Mass Spectrometer. The instrument consists of a 3D-printed, compact chip-like package containing MEMS components required to perform the gas analysis. Obtained mass range between 1 and 150 u and a resolution of 45, makes it ideal for a range of applications which does not require high-end performance. Our work demonstrates that MEMS technology in conjunction with novel 3Dp fabrication techniques offers a feasible route to developing compact mass spectrometers, providing an opportunity for researchers to create portable, yet potent instruments for a range of applications, opening new possibilities for on-site, real-time analysis in many different fields.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121189811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188957
A. Schels, F. Herdl, M. Hausladen, Dominik Wohlfartsstätter, M. Bachmann, S. Edler, F. Düsberg, A. Pahlke, P. Buchner, R. Schreiner, W. Hansch
Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.
{"title":"Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays","authors":"A. Schels, F. Herdl, M. Hausladen, Dominik Wohlfartsstätter, M. Bachmann, S. Edler, F. Düsberg, A. Pahlke, P. Buchner, R. Schreiner, W. Hansch","doi":"10.1109/IVNC57695.2023.10188957","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188957","url":null,"abstract":"Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114651888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：