Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188880
Aleksandra M. Buchta, A. Kassner, Julia Voß, Tobias Leopold, Julian Petring, L. Diekmann, F. Dencker, M. Wurz
This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.
{"title":"Novel Glass-Silicon Emitter Chip for Field Emission Applications","authors":"Aleksandra M. Buchta, A. Kassner, Julia Voß, Tobias Leopold, Julian Petring, L. Diekmann, F. Dencker, M. Wurz","doi":"10.1109/IVNC57695.2023.10188880","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188880","url":null,"abstract":"This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125839648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188967
B. Slayton, Ryan S. Kim, W. Putnam
We study charged-particle guiding structures based on periodic arrangements of microfabricated electrostatic lenses. Specifically, we analyze such electrostatic guiding structures via a transfer matrix approach, and we uncover the stability criteria and the beam transport properties of these guides. Furthermore, we present a planar guide design that is amenable to modern microfabrication, and we demonstrate, via simulation, that this guide is capable of confining energetic, keV-scale electron beams over extended lengths.
{"title":"Micron-Scale Electrostatic Charged-Particle Guides: Analysis and Simulation","authors":"B. Slayton, Ryan S. Kim, W. Putnam","doi":"10.1109/IVNC57695.2023.10188967","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188967","url":null,"abstract":"We study charged-particle guiding structures based on periodic arrangements of microfabricated electrostatic lenses. Specifically, we analyze such electrostatic guiding structures via a transfer matrix approach, and we uncover the stability criteria and the beam transport properties of these guides. Furthermore, we present a planar guide design that is amenable to modern microfabrication, and we demonstrate, via simulation, that this guide is capable of confining energetic, keV-scale electron beams over extended lengths.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132313588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189014
A. Ayari, P. Vincent, S. Perisanu, P. Poncharal, S. Purcell
Even though the Fowler-Nordheim theory is almost 100 years old, the characterization of field emitters is not always very reliable. A common belief in the community is that the estimated values of the work function, emission area and field enhancement factor are probably correct within a few percent or below as the uncertainty in these values is rarely mentioned. We will show that even for a high-quality linear Fowler-Nordheim plot the inaccuracy in the extracted parameters is more of the order of 50 %.
{"title":"How Accurate is a Field Emission Experiment?","authors":"A. Ayari, P. Vincent, S. Perisanu, P. Poncharal, S. Purcell","doi":"10.1109/IVNC57695.2023.10189014","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189014","url":null,"abstract":"Even though the Fowler-Nordheim theory is almost 100 years old, the characterization of field emitters is not always very reliable. A common belief in the community is that the estimated values of the work function, emission area and field enhancement factor are probably correct within a few percent or below as the uncertainty in these values is rarely mentioned. We will show that even for a high-quality linear Fowler-Nordheim plot the inaccuracy in the extracted parameters is more of the order of 50 %.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128947273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188998
Yang Zhou, P. Zhang
In this work, we analyze the quantum pathways interference in two-color photoemission under DC bias using exact analytical solutions of the one-dimensional (1D) time-dependent Schrodinger equation (TDSE). The effects of DC bias and laser fields on the modulation of photoemission are systematically investigated. Increasing DC bias shifts the dominant emission from multiphoton photoemission to photo-assisted field emission and then direct tunneling, which leads to different dominant pathways and interferences. Our study provides insights into two-color photoemission dynamics under DC bias.
{"title":"Effects of DC Bias on Quantum Pathways Interference in Two-Color Laser Induced Photoemission","authors":"Yang Zhou, P. Zhang","doi":"10.1109/IVNC57695.2023.10188998","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188998","url":null,"abstract":"In this work, we analyze the quantum pathways interference in two-color photoemission under DC bias using exact analytical solutions of the one-dimensional (1D) time-dependent Schrodinger equation (TDSE). The effects of DC bias and laser fields on the modulation of photoemission are systematically investigated. Increasing DC bias shifts the dominant emission from multiphoton photoemission to photo-assisted field emission and then direct tunneling, which leads to different dominant pathways and interferences. Our study provides insights into two-color photoemission dynamics under DC bias.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114537167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189011
Sergey Filippov, R. Forbes, E. O. Popov, A. G. Kolosko, F. F. Dall’Agnol
The general background to this research is set out in [1], [2]. It is based on the idea that an experimentally measured value of the so-called “AHFP exponent” kmight be used to choose between alternative theories of field electron emission (FE), in the first instance between 1928/29 Fowler-Nordheim (FN) FE theory and 1956 Murphy-Good (MG) FE theory. Amongst several factors that influence predicted theoretical ranges for x-values are the shape and local work function of a point-like or post-like field emitter. Our earlier work [1] explored a limited range of these parameters, but the overall conclusion was that the only x-value (1.63) considered adequately reliable did not yield a decisive result. As discussed in detail in this presentation, we have now explored a wider range of these parameters, but the outcome is still not a decisive result. Implications are discussed in a separate presentation [2].
{"title":"Further Studies on Using the AHFP Exponent to Choose Between Alternative Field Emission Theories","authors":"Sergey Filippov, R. Forbes, E. O. Popov, A. G. Kolosko, F. F. Dall’Agnol","doi":"10.1109/IVNC57695.2023.10189011","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189011","url":null,"abstract":"The general background to this research is set out in [1], [2]. It is based on the idea that an experimentally measured value of the so-called “AHFP exponent” kmight be used to choose between alternative theories of field electron emission (FE), in the first instance between 1928/29 Fowler-Nordheim (FN) FE theory and 1956 Murphy-Good (MG) FE theory. Amongst several factors that influence predicted theoretical ranges for x-values are the shape and local work function of a point-like or post-like field emitter. Our earlier work [1] explored a limited range of these parameters, but the overall conclusion was that the only x-value (1.63) considered adequately reliable did not yield a decisive result. As discussed in detail in this presentation, we have now explored a wider range of these parameters, but the outcome is still not a decisive result. Implications are discussed in a separate presentation [2].","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124649601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189008
Shuai Tang, Jie Tang, E. Okunishi, J. Uzuhashi, T. Ohkubo, M. Takeguchi, Lupin Qin
A LaB6 nanoneedle field-emission point electron source has been developed and installed in a spherical aberration- corrected transmission electron microscope (Cs-corrected TEM) for performance evaluations. A sub-Angstrom (0.96 Å) spatial resolution and small energy spread (0.38 eV) has been obtained. In addition, the LaB6 nanoneedle can work stably for more than 100 hours continuously with a fluctuation smaller than 1%, which showed more than ten times in improvement than the contemporary W(310) field- emitter and also showed the best stability in electron emission. This new electron source is expected to be applicable for other electron beam technologies, including cryo-EM, ultrafast-EM, electron beam lithography.
{"title":"A LAB6 Nanoneedle Field-Emission Electron Source for Stable Imaging with Atomic Resolution in a Transmission Electron Microscope","authors":"Shuai Tang, Jie Tang, E. Okunishi, J. Uzuhashi, T. Ohkubo, M. Takeguchi, Lupin Qin","doi":"10.1109/IVNC57695.2023.10189008","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189008","url":null,"abstract":"A LaB6 nanoneedle field-emission point electron source has been developed and installed in a spherical aberration- corrected transmission electron microscope (Cs-corrected TEM) for performance evaluations. A sub-Angstrom (0.96 Å) spatial resolution and small energy spread (0.38 eV) has been obtained. In addition, the LaB6 nanoneedle can work stably for more than 100 hours continuously with a fluctuation smaller than 1%, which showed more than ten times in improvement than the contemporary W(310) field- emitter and also showed the best stability in electron emission. This new electron source is expected to be applicable for other electron beam technologies, including cryo-EM, ultrafast-EM, electron beam lithography.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130327131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188994
Ranajoy Bhattacharyar, Pao-Chuan Shih, Tomás Palacios, J. Browning
Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.
{"title":"Temperature Effects on Gallium Nitride Field Emitter Arrays","authors":"Ranajoy Bhattacharyar, Pao-Chuan Shih, Tomás Palacios, J. Browning","doi":"10.1109/IVNC57695.2023.10188994","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188994","url":null,"abstract":"Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132933818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188990
Nathaniel Hernandez, M. Cahay, J. O'Mara, Jonathan Ludwick, D. Walker, T. Back, H. Hall
We successfully demonstrate for the first-time field emission (FE) from and to the two-dimensional electron gas (2DEG) formed in AlGaN/GaN heterojunction based lateral nanoscale vacuum emission diodes. In addition, we demonstrate FE with an AlGaN/GaN cathode and metallic anode. Our FE measurements demonstrate that these vacuum diodes with AlGaN/GaN and metallic anodes can deliver emission current in the range of microamps to milliamps, respectively, when biased within a range from 5 to 30 V.
{"title":"Exploring the Field Emission Capabilities of ALGAN/GAN Nanoscale Vacuum Diodes","authors":"Nathaniel Hernandez, M. Cahay, J. O'Mara, Jonathan Ludwick, D. Walker, T. Back, H. Hall","doi":"10.1109/IVNC57695.2023.10188990","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188990","url":null,"abstract":"We successfully demonstrate for the first-time field emission (FE) from and to the two-dimensional electron gas (2DEG) formed in AlGaN/GaN heterojunction based lateral nanoscale vacuum emission diodes. In addition, we demonstrate FE with an AlGaN/GaN cathode and metallic anode. Our FE measurements demonstrate that these vacuum diodes with AlGaN/GaN and metallic anodes can deliver emission current in the range of microamps to milliamps, respectively, when biased within a range from 5 to 30 V.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133489774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188947
Stefanie Haugg, C. Hedrich, Luis-Felipe Mochalski, Isabel González Díaz-Palacio, R. Zierold, R. Blick
A turn-on field reduction of up to 59% was observed for field emission (FE) from carbon nanotube (CNT) forests that were grown on titanium nitride (TiN) coated substrates instead of on pristine ones. The FE properties of the CNTs were enhanced by the TiN films on the substrates-which were generated by plasma-enhanced atomic layer deposition (PEALD)-without a noticeable impact on the emitter morphology. These results are transferred from bulk to nanomembrane substrates revealing improved FE properties, which could potentially be used for future sensor applications.
{"title":"Enhancement of Field Emission Properties of Carbon Nanotube Forests by Direct Growth on Titanium Nitride-Coated Substrates","authors":"Stefanie Haugg, C. Hedrich, Luis-Felipe Mochalski, Isabel González Díaz-Palacio, R. Zierold, R. Blick","doi":"10.1109/IVNC57695.2023.10188947","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188947","url":null,"abstract":"A turn-on field reduction of up to 59% was observed for field emission (FE) from carbon nanotube (CNT) forests that were grown on titanium nitride (TiN) coated substrates instead of on pristine ones. The FE properties of the CNTs were enhanced by the TiN films on the substrates-which were generated by plasma-enhanced atomic layer deposition (PEALD)-without a noticeable impact on the emitter morphology. These results are transferred from bulk to nanomembrane substrates revealing improved FE properties, which could potentially be used for future sensor applications.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116437087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189004
Tomoaki Osumi, Ryosuke Hori, M. Nagao, H. Murata, Y. Gotoh
Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours
{"title":"Electron Emission Characteristics of Field Emitter Arrays Coated with Over-Stoichiometric Hafnium Nitride","authors":"Tomoaki Osumi, Ryosuke Hori, M. Nagao, H. Murata, Y. Gotoh","doi":"10.1109/IVNC57695.2023.10189004","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189004","url":null,"abstract":"Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133048064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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