Direct-write methods, such as the Aerosol Jet® technology, have enabled fabrication of flexible multifunctional 3-D devices by printing electronic circuits on thermoplastic and thermoset polymer materials. Conductive traces printed by additive manufacturing typically start in the form of liquid metal nanoparticle inks. To produce functional circuits, the printed metal nanoparticle ink material must be postprocessed to form conductive metal by sintering at elevated temperature. Metal nanoparticles are widely used in conductive inks because they can be sintered at relatively low temperatures compared with the melting temperature of bulk metal. This is desirable for fabricating circuits on low-cost plastic substrates. To minimize thermal damage to the plastics, while effectively sintering the metal nanoparticle inks, we describe a laser sintering process that generates a localized heat-affected zone (HAZ) when scanning over a printed feature. For sintering metal nanoparticles that are reactive to oxygen, an ...
{"title":"Localized Laser Sintering of Metal Nanoparticle Inks Printed with Aerosol Jet® Technology for Flexible Electronics","authors":"M. Renn, M. Schrandt, J. Renn, James Q. Feng","doi":"10.4071/IMAPS.521797","DOIUrl":"https://doi.org/10.4071/IMAPS.521797","url":null,"abstract":"Direct-write methods, such as the Aerosol Jet® technology, have enabled fabrication of flexible multifunctional 3-D devices by printing electronic circuits on thermoplastic and thermoset polymer materials. Conductive traces printed by additive manufacturing typically start in the form of liquid metal nanoparticle inks. To produce functional circuits, the printed metal nanoparticle ink material must be postprocessed to form conductive metal by sintering at elevated temperature. Metal nanoparticles are widely used in conductive inks because they can be sintered at relatively low temperatures compared with the melting temperature of bulk metal. This is desirable for fabricating circuits on low-cost plastic substrates. To minimize thermal damage to the plastics, while effectively sintering the metal nanoparticle inks, we describe a laser sintering process that generates a localized heat-affected zone (HAZ) when scanning over a printed feature. For sintering metal nanoparticles that are reactive to oxygen, an ...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"132-139"},"PeriodicalIF":0.0,"publicationDate":"2017-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48227496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 °C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 °C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of 13 experimental trials. The average porosities of 24.6 to 46.2% and shear strengths of 26.1 to 47.7 MPa are comparable with and/or even better than those reported for sintered joints using wet nanosilver pastes. Their dependences on the sintering temperature, time and pressure are further fitted to equations similar to those describing the kinetics of sintering processes of powder compacts. The equations obtained can be used to not only reveal different mechanisms dominating the densification and bonding strength, but also anticipate the thermal-induced evolutions of microstructures of these rapidly sintered joints during future reliability tests and/or in service.
{"title":"Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film","authors":"J. Dai, Jianfeng Li, P. Agyakwa, C. M. Johnson","doi":"10.4071/IMAPS.521776","DOIUrl":"https://doi.org/10.4071/IMAPS.521776","url":null,"abstract":"Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 °C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 °C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of 13 experimental trials. The average porosities of 24.6 to 46.2% and shear strengths of 26.1 to 47.7 MPa are comparable with and/or even better than those reported for sintered joints using wet nanosilver pastes. Their dependences on the sintering temperature, time and pressure are further fitted to equations similar to those describing the kinetics of sintering processes of powder compacts. The equations obtained can be used to not only reveal different mechanisms dominating the densification and bonding strength, but also anticipate the thermal-induced evolutions of microstructures of these rapidly sintered joints during future reliability tests and/or in service.","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"000207-000212"},"PeriodicalIF":0.0,"publicationDate":"2017-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46669314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-11-03DOI: 10.4071/ISOM-2017-WP32_006
R. Dohle, I. Sacco, T. Rittweg, Thomas Friedrich, Gerold Henning, Jörg Goßler, P. Fischer
Abstract We present a very compact hybrid detection module based on an advanced liquid-cooled LTCC substrate. The double sided hybrid combines 144 photo detectors and 4 specialized flip-chip readout ASICs used for the readout of scintillation crystals with application in time-of-flight (TOF) Positron Emission Tomography (PET) combined with Magnetic Resonance Imaging (MRI). Positron Emission Tomography is mostly known for its use in oncology applications, cardiovascular disease, and imaging of brain functions. If MRI images and PET images are combined, completely new medical diagnostic and treatment prospects are feasible since MRI delivers precise anatomical information. One of the biggest challenges is the development of miniaturized detector modules that are highly functional and MRI compatible. Our SiPM module has an area of 32.8 by 32.0 mm2 and contains 12 × 12 SiPMs in a pitch of 2.5 mm2. The SiPM readout of the 144 channels is performed by four PETA6 ASICs. The LTCC substrate with 2.1 mm thickness h...
{"title":"LTCC Based Highly Integrated SiPM Module With Integrated Liquid Cooling Channels for High Resolution Molecular Imaging","authors":"R. Dohle, I. Sacco, T. Rittweg, Thomas Friedrich, Gerold Henning, Jörg Goßler, P. Fischer","doi":"10.4071/ISOM-2017-WP32_006","DOIUrl":"https://doi.org/10.4071/ISOM-2017-WP32_006","url":null,"abstract":"Abstract We present a very compact hybrid detection module based on an advanced liquid-cooled LTCC substrate. The double sided hybrid combines 144 photo detectors and 4 specialized flip-chip readout ASICs used for the readout of scintillation crystals with application in time-of-flight (TOF) Positron Emission Tomography (PET) combined with Magnetic Resonance Imaging (MRI). Positron Emission Tomography is mostly known for its use in oncology applications, cardiovascular disease, and imaging of brain functions. If MRI images and PET images are combined, completely new medical diagnostic and treatment prospects are feasible since MRI delivers precise anatomical information. One of the biggest challenges is the development of miniaturized detector modules that are highly functional and MRI compatible. Our SiPM module has an area of 32.8 by 32.0 mm2 and contains 12 × 12 SiPMs in a pitch of 2.5 mm2. The SiPM readout of the 144 channels is performed by four PETA6 ASICs. The LTCC substrate with 2.1 mm thickness h...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"2017 1","pages":"000398-000405"},"PeriodicalIF":0.0,"publicationDate":"2017-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45488992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-11-03DOI: 10.4071/ISOM-2017-WA36_162
B. Tehrani, R. Bahr, M. Tentzeris
This article outlines the design, processing, and implementation of inkjet and 3D printing technologies for the development of fully printed, highly integrated millimeter-wave (mm-wave) wireless packages. The materials, tools, and processes of each technology are outlined and justified for their respective purposes. Inkjet-printed 3D interconnects directly interfacing a packaging substrate with an integrated circuit (IC) die are presented using printed dielectric ramps and coplanar waveguide transmission lines exhibiting low loss (.6–.8 dB/mm at 40 GHz). Stereolithography 3D printing is presented for the encapsulation of IC dice, enabling the application-specific integration of on-package structures, including dielectric lenses and frequency selective surface–based wireless filters. Finally, inkjet and 3D printing technology are combined to present sloped mm-wave interconnects through an encapsulant, or through mold vias, achieving a slope of up to 65° and low loss (.5–.6 dB/mm at 60 GHz). The combination of these additive techniques is highlighted for the development of scalable, application-specific wireless packages.
{"title":"Inkjet and 3D Printing Technology for Fundamental Millimeter-Wave Wireless Packaging","authors":"B. Tehrani, R. Bahr, M. Tentzeris","doi":"10.4071/ISOM-2017-WA36_162","DOIUrl":"https://doi.org/10.4071/ISOM-2017-WA36_162","url":null,"abstract":"\u0000 This article outlines the design, processing, and implementation of inkjet and 3D printing technologies for the development of fully printed, highly integrated millimeter-wave (mm-wave) wireless packages. The materials, tools, and processes of each technology are outlined and justified for their respective purposes. Inkjet-printed 3D interconnects directly interfacing a packaging substrate with an integrated circuit (IC) die are presented using printed dielectric ramps and coplanar waveguide transmission lines exhibiting low loss (.6–.8 dB/mm at 40 GHz). Stereolithography 3D printing is presented for the encapsulation of IC dice, enabling the application-specific integration of on-package structures, including dielectric lenses and frequency selective surface–based wireless filters. Finally, inkjet and 3D printing technology are combined to present sloped mm-wave interconnects through an encapsulant, or through mold vias, achieving a slope of up to 65° and low loss (.5–.6 dB/mm at 60 GHz). The combination of these additive techniques is highlighted for the development of scalable, application-specific wireless packages.","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46232863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The number of die and routing layers in multichip modules and fan-out packages has been steadily increasing, which has exasperated the problem of maintaining module planarity for interconnect to a ...
{"title":"Multichip Module Planarity Requirements Derived From Solder Surface Tension Models","authors":"T. Marinis, J. W. Soucy","doi":"10.4071/IMAPS.526636","DOIUrl":"https://doi.org/10.4071/IMAPS.526636","url":null,"abstract":"The number of die and routing layers in multichip modules and fan-out packages has been steadily increasing, which has exasperated the problem of maintaining module planarity for interconnect to a ...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"2017 1","pages":"000727-000736"},"PeriodicalIF":0.0,"publicationDate":"2017-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48371049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-11-03DOI: 10.4071/ISOM-2017-POSTER5_154
Clara Dionet, G. Perosevic, Jeffrey Javier, Sammie Fernandez, T. Hurdle, M. Moradi, Andrew Neely, Kevin Ma, M. Albarghouti
Abstract In this work, the root cause of the increase in dark current occurring over time at high temperature in hermetic packages, such as those used in optoelectronic devices, was investigated. It was observed that hermetic Receiver Optical Subassembly (ROSA) devices show continuously increasing dark current when stressed and monitored at 85°C over an extended period of time, reaching, in some cases, values greater than 500nA. However, this increase in leakage current was recoverable once the package seal is broken, and this behavior was found to be very repeatable. Photodetectors from two different suppliers were tested and found to have dark current which is dependent on the fabrication process, as the photodetector (PD) from supplier 1 (PD1) showed three times higher leakage than the photodetector from supplier 2 (PD2). The main difference between the two photodetectors is that the polyimide layer in PD1 in significantly greater than in PD2. It was also observed that 48 hour pre-seal baking at 120°C ...
{"title":"Dark Current Leakage in Optoelectronic Hermetic Packages","authors":"Clara Dionet, G. Perosevic, Jeffrey Javier, Sammie Fernandez, T. Hurdle, M. Moradi, Andrew Neely, Kevin Ma, M. Albarghouti","doi":"10.4071/ISOM-2017-POSTER5_154","DOIUrl":"https://doi.org/10.4071/ISOM-2017-POSTER5_154","url":null,"abstract":"Abstract In this work, the root cause of the increase in dark current occurring over time at high temperature in hermetic packages, such as those used in optoelectronic devices, was investigated. It was observed that hermetic Receiver Optical Subassembly (ROSA) devices show continuously increasing dark current when stressed and monitored at 85°C over an extended period of time, reaching, in some cases, values greater than 500nA. However, this increase in leakage current was recoverable once the package seal is broken, and this behavior was found to be very repeatable. Photodetectors from two different suppliers were tested and found to have dark current which is dependent on the fabrication process, as the photodetector (PD) from supplier 1 (PD1) showed three times higher leakage than the photodetector from supplier 2 (PD2). The main difference between the two photodetectors is that the polyimide layer in PD1 in significantly greater than in PD2. It was also observed that 48 hour pre-seal baking at 120°C ...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"2017 1","pages":"000669-000674"},"PeriodicalIF":0.0,"publicationDate":"2017-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48597966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Khanna, P. McCluskey, A. Bar-Cohen, Bao Yang, M. Ohadi
Abstract Traditional power electronics for military and fast computing applications are bulky and heavy. The “mechanical design” of electronic structure and “materials” of construction of the components have limitations in performance under very high temperature conditions. The major concern here is “thermal management.” To be more specific, this refers to removal of high-concentration hotspot heat flux >5 kW/cm2, background heat flux >1 kW/cm2, and “miniaturization” of device within a substrate thickness of <100 μm. We report on the novel applications of contact-based thermoelectric cooling (TEC) to successful implementations of high-conductivity materials - diamond substrate grown on gallium nitride (GaN)/AlGaN transistors to keep the hotspot temperature rise of device below 5 K. The requirement for smarter and faster functionality along with a compact design is considered here. These efforts have focused on the removal of higher levels of heat flux, heat transfer across interface of junction and substr...
{"title":"Thin Thermally Efficient ICECool Defense Semiconductor Power Amplifiers","authors":"S. Khanna, P. McCluskey, A. Bar-Cohen, Bao Yang, M. Ohadi","doi":"10.4071/IMAPS.456518","DOIUrl":"https://doi.org/10.4071/IMAPS.456518","url":null,"abstract":"Abstract Traditional power electronics for military and fast computing applications are bulky and heavy. The “mechanical design” of electronic structure and “materials” of construction of the components have limitations in performance under very high temperature conditions. The major concern here is “thermal management.” To be more specific, this refers to removal of high-concentration hotspot heat flux >5 kW/cm2, background heat flux >1 kW/cm2, and “miniaturization” of device within a substrate thickness of <100 μm. We report on the novel applications of contact-based thermoelectric cooling (TEC) to successful implementations of high-conductivity materials - diamond substrate grown on gallium nitride (GaN)/AlGaN transistors to keep the hotspot temperature rise of device below 5 K. The requirement for smarter and faster functionality along with a compact design is considered here. These efforts have focused on the removal of higher levels of heat flux, heat transfer across interface of junction and substr...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"77-93"},"PeriodicalIF":0.0,"publicationDate":"2017-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45484211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract In Memoriam—In memory of Dr. Zbigniew Magonski, a talented electronic engineer and inventor, was born in Glubczyce, Poland in 1950 and passed away in Cracow, Poland in 2017. He received M.Sc. degree in Solid State Technology from the Technical University of Wroclaw, Poland in 1973, and PhD degree from the AGH University of Science and Technology, Cracow, Poland in 2000. For 15 years, he was with the R&D Center for Hybrid Microelectronics, Cracow Poland. At that time, his interest was focused on hybrid A/D, D/A converters also on DC HV power converters. Later, for 28 years, he was with the Department of Electronics, AGH University of Science and Technology, Cracow, Poland. His research interests covered ceramic microfluidic systems, hydrocarbon combustors, and high-temperature solid oxide fuel cells. In 1994–1995, he was with Summit Technology, Massachusetts, involved in a project relating to HV supplying of excimer lasers. He was a member of IMAPS US Chapter, the author of 13 patents and almost 5...
{"title":"Combustion Heat Meter","authors":"Z. Magoński","doi":"10.4071/IMAPS.0531","DOIUrl":"https://doi.org/10.4071/IMAPS.0531","url":null,"abstract":"Abstract In Memoriam—In memory of Dr. Zbigniew Magonski, a talented electronic engineer and inventor, was born in Glubczyce, Poland in 1950 and passed away in Cracow, Poland in 2017. He received M.Sc. degree in Solid State Technology from the Technical University of Wroclaw, Poland in 1973, and PhD degree from the AGH University of Science and Technology, Cracow, Poland in 2000. For 15 years, he was with the R&D Center for Hybrid Microelectronics, Cracow Poland. At that time, his interest was focused on hybrid A/D, D/A converters also on DC HV power converters. Later, for 28 years, he was with the Department of Electronics, AGH University of Science and Technology, Cracow, Poland. His research interests covered ceramic microfluidic systems, hydrocarbon combustors, and high-temperature solid oxide fuel cells. In 1994–1995, he was with Summit Technology, Massachusetts, involved in a project relating to HV supplying of excimer lasers. He was a member of IMAPS US Chapter, the author of 13 patents and almost 5...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"100-107"},"PeriodicalIF":0.0,"publicationDate":"2017-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47436217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract The fundamental ability to drive automatically to independent locations and deposit controlled masses of electronics packaging adhesives makes dispensing an attractive solution in the electronics assembly. The existence of modern technology such as smartphones, wearable devices (watches, glasses, etc.), and tablets have led to tightly spaced, and high-density component packaging which further causes complex designs in the Printed Circuit Board (PCB) assembly. Advancements in dispensing technology because of these growing challenges in assembly has led to use of jetting systems in this new arena. The process of jetting, unlike traditional dispensing, has the ability to deposit controlled masses of packaging adhesives (also known as packaging fluids) at tightly spaced locations with high accuracy and high speed and at much higher deposition heights from the substrate. In this article, a voice-coil-driven jetting system is studied to assess the capability of jetting micrograms of electronics packagi...
{"title":"Experimental Analysis of a Voice-Coil-Driven Jetting System for Micrograms Fluid Depositions in Electronics Assembly","authors":"Rajiv L. Iyer, D. Santos","doi":"10.4071/IMAPS.460769","DOIUrl":"https://doi.org/10.4071/IMAPS.460769","url":null,"abstract":"Abstract The fundamental ability to drive automatically to independent locations and deposit controlled masses of electronics packaging adhesives makes dispensing an attractive solution in the electronics assembly. The existence of modern technology such as smartphones, wearable devices (watches, glasses, etc.), and tablets have led to tightly spaced, and high-density component packaging which further causes complex designs in the Printed Circuit Board (PCB) assembly. Advancements in dispensing technology because of these growing challenges in assembly has led to use of jetting systems in this new arena. The process of jetting, unlike traditional dispensing, has the ability to deposit controlled masses of packaging adhesives (also known as packaging fluids) at tightly spaced locations with high accuracy and high speed and at much higher deposition heights from the substrate. In this article, a voice-coil-driven jetting system is studied to assess the capability of jetting micrograms of electronics packagi...","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"108-121"},"PeriodicalIF":0.0,"publicationDate":"2017-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42547392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract There is a strong market need for further miniaturization of microelectronic ceramic-based products; electronic components require an increasingly finer pitch interconnect. Screen-printing resolution is a limiting factor in further miniaturization of classical thick film. Photo imageable thick film technology (PITF) was proposed decades ago as a successor technology to thick film, to achieve finer pitch patterns. However, where classical multilayer thick film provides good routing and interconnect capabilities, but insufficient fine line resolution, PITF does the reverse: no multilayer routing but advanced fine line performance. A combination of PITF for fine pitch mounting with advanced MLTF for efficient routing has been developed, targeting a linewidth of 50 μm line/spaces and below. Test and demo panels were made, using combinations of PITF pastes and conventional screen-print materials. Results, process performance, and limiting factors are discussed.
{"title":"Combining Fine Line Photoimageable with Multi-Step Thick Film for Improved Circuit Density","authors":"R. Tacken, Daniel Mitcan, J. Nab","doi":"10.4071/IMAPS.459344","DOIUrl":"https://doi.org/10.4071/IMAPS.459344","url":null,"abstract":"Abstract There is a strong market need for further miniaturization of microelectronic ceramic-based products; electronic components require an increasingly finer pitch interconnect. Screen-printing resolution is a limiting factor in further miniaturization of classical thick film. Photo imageable thick film technology (PITF) was proposed decades ago as a successor technology to thick film, to achieve finer pitch patterns. However, where classical multilayer thick film provides good routing and interconnect capabilities, but insufficient fine line resolution, PITF does the reverse: no multilayer routing but advanced fine line performance. A combination of PITF for fine pitch mounting with advanced MLTF for efficient routing has been developed, targeting a linewidth of 50 μm line/spaces and below. Test and demo panels were made, using combinations of PITF pastes and conventional screen-print materials. Results, process performance, and limiting factors are discussed.","PeriodicalId":35312,"journal":{"name":"Journal of Microelectronics and Electronic Packaging","volume":"14 1","pages":"94-99"},"PeriodicalIF":0.0,"publicationDate":"2017-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46654568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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