Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962907
C. Weißenborn, F. J. Sànchez
At present, data access technology for engineers and technicians is less dynamic and more static, and it can be difficult to obtain readily available information for just in time maintenance and communication, or to use technical schematics, photos and videos to capture expert knowledge in a mobile environment. A mobile tool was needed to provide best known method (BKM) information at the exact time of need without having to spend extra time searching for or locating the information. The Technical Electronic Knowledge Personal Assistant Capsule (TekPAC) interface for the Pocket PC is a device that: provides access to readily available electronic information; allows the user to perform tasks at locations with all schematics, photos, videos and BKMs readily available; integrates key interventions to raise performance of target audience; and provides an input and output module for knowledge capture.
目前，工程师和技术人员的数据访问技术较少动态，更多的是静态的，并且很难获得随时可用的信息，以便及时维护和通信，或者在移动环境中使用技术原理图，照片和视频来捕获专家知识。需要一种移动工具，以便在需要的确切时间提供最知名的方法(BKM)信息，而不必花费额外的时间搜索或定位信息。用于Pocket PC的Technical Electronic Knowledge Personal Assistant Capsule (TekPAC)接口是一种设备，可提供对随时可用的电子信息的访问;允许用户在所有的原理图，照片，视频和bkm随时可用的地点执行任务;整合关键干预措施以提高目标受众的绩效;并提供了知识获取的输入输出模块。
{"title":"TekPAC (Technical Electronic Knowledge Personal Assistant Capsule)","authors":"C. Weißenborn, F. J. Sànchez","doi":"10.1109/ISSM.2001.962907","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962907","url":null,"abstract":"At present, data access technology for engineers and technicians is less dynamic and more static, and it can be difficult to obtain readily available information for just in time maintenance and communication, or to use technical schematics, photos and videos to capture expert knowledge in a mobile environment. A mobile tool was needed to provide best known method (BKM) information at the exact time of need without having to spend extra time searching for or locating the information. The Technical Electronic Knowledge Personal Assistant Capsule (TekPAC) interface for the Pocket PC is a device that: provides access to readily available electronic information; allows the user to perform tasks at locations with all schematics, photos, videos and BKMs readily available; integrates key interventions to raise performance of target audience; and provides an input and output module for knowledge capture.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130515081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962958
K. Cho, Gyu-Chul Kim, Kee-Moon Chun
When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design.
{"title":"A plausible model and solutions for an HSQ-related volume shrinkage of aluminum landing pad","authors":"K. Cho, Gyu-Chul Kim, Kee-Moon Chun","doi":"10.1109/ISSM.2001.962958","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962958","url":null,"abstract":"When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126600096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962920
K. Mori, A. Ono, J. Iwasaki
This paper presents new control method to manage inter-line material movements in a real fab, and shows that the control method is very effective for material management of multi-production lines through simulation results and actual results applied to real fab.
{"title":"Dynamical control method of AMHS for multi-production lines","authors":"K. Mori, A. Ono, J. Iwasaki","doi":"10.1109/ISSM.2001.962920","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962920","url":null,"abstract":"This paper presents new control method to manage inter-line material movements in a real fab, and shows that the control method is very effective for material management of multi-production lines through simulation results and actual results applied to real fab.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114073753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.963012
A. Ogata, Y. Iwata, I. Yasuharu, Y. Kikuchi
End point detector waveform analysis and machine-to-machine difference analysis are expected to realize shortening process development time of new products for the metal etching process. The high reliability of collecting data such as maintenance is expected to improve equipment performance. We developed a process monitoring system (PMS) which has been installed in our /spl phi/ 200 wafer fab. PMS is a remote equipment diagnostics system. PMS collects EPD waveform data, maintenance data and so on. EPD waveform analysis such as wafer-to-wafer, lot-to-lot and machine-to-machine supports shortening process development time. PMS also improves overall equipment efficiency (OEE) and reduces waiting time for the instruction from process staff.
{"title":"Remote equipment diagnosis for metal etching process","authors":"A. Ogata, Y. Iwata, I. Yasuharu, Y. Kikuchi","doi":"10.1109/ISSM.2001.963012","DOIUrl":"https://doi.org/10.1109/ISSM.2001.963012","url":null,"abstract":"End point detector waveform analysis and machine-to-machine difference analysis are expected to realize shortening process development time of new products for the metal etching process. The high reliability of collecting data such as maintenance is expected to improve equipment performance. We developed a process monitoring system (PMS) which has been installed in our /spl phi/ 200 wafer fab. PMS is a remote equipment diagnostics system. PMS collects EPD waveform data, maintenance data and so on. EPD waveform analysis such as wafer-to-wafer, lot-to-lot and machine-to-machine supports shortening process development time. PMS also improves overall equipment efficiency (OEE) and reduces waiting time for the instruction from process staff.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114335884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962940
M. Aminzadeh, K. Ravi, G. Sery, S. Hu
Historically Intel has used p/p+ epitaxial wafers for all products for more than 15 years. The epitaxial wafers have several key characteristics such as latch up immunity, oxygen free active area, and superior oxide quality compared to polished non-epi wafers. The epi wafers however are large materials cost contributors. Pseudo epi is an alternative to epi wafers with equivalent device performance and material cost savings of 25 to 30%. Pseudo epi or hydrogen anneal is expected to save Intel 6% of total 200 mm Si production costs in 2002 for one chipset process line. This savings is expected to increase to equivalent of 13% of 200 mm Si production cost when expanded to a 0.13 /spl mu/m microprocessor process.
从历史上看，英特尔已经在所有产品中使用p/p+外延晶片超过15年。与抛光的非外延晶片相比，外延晶片具有几个关键特性，如闩锁免疫，无氧活性区域和优越的氧化物质量。然而，外延晶圆是很大的材料成本贡献者。伪外延树脂是外延树脂晶圆的替代品，具有同等的器件性能和材料成本节省25 - 30%。2002年，一条芯片组工艺线的假epi或氢退火预计将为英特尔节省6%的总200mm Si生产成本。当扩展到0.13 /spl mu/m微处理器工艺时，这一节省预计将增加到相当于200 mm Si生产成本的13%。
{"title":"Pseudo Epi, materials cost reduction","authors":"M. Aminzadeh, K. Ravi, G. Sery, S. Hu","doi":"10.1109/ISSM.2001.962940","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962940","url":null,"abstract":"Historically Intel has used p/p+ epitaxial wafers for all products for more than 15 years. The epitaxial wafers have several key characteristics such as latch up immunity, oxygen free active area, and superior oxide quality compared to polished non-epi wafers. The epi wafers however are large materials cost contributors. Pseudo epi is an alternative to epi wafers with equivalent device performance and material cost savings of 25 to 30%. Pseudo epi or hydrogen anneal is expected to save Intel 6% of total 200 mm Si production costs in 2002 for one chipset process line. This savings is expected to increase to equivalent of 13% of 200 mm Si production cost when expanded to a 0.13 /spl mu/m microprocessor process.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962952
V. Bakshi, G. Smith, T. Alzaben, J. Beach, K. Spurlock, R. Berger, Siew Dorris, S. Pearson, D. Holladay, J. Woehl
The semiconductor industry plans to use 193 nm resist for patterning in the 130 to 100 nm node. The suppliers of 193 nm resist continue to introduce improved versions of their present resists and additional resists based on new chemical structures. In the advanced technology development facility (ATDF) of International SEMATECH we have developed benchmarking methodology to provided initial screening data on lithographic and etch performance on a number of 193 nm resists to our member companies. This paper outlines our benchmarking approach and gives initial benchmarking results for the etch performance.
{"title":"Benchmarking 193 nm photoresists for etch resistance","authors":"V. Bakshi, G. Smith, T. Alzaben, J. Beach, K. Spurlock, R. Berger, Siew Dorris, S. Pearson, D. Holladay, J. Woehl","doi":"10.1109/ISSM.2001.962952","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962952","url":null,"abstract":"The semiconductor industry plans to use 193 nm resist for patterning in the 130 to 100 nm node. The suppliers of 193 nm resist continue to introduce improved versions of their present resists and additional resists based on new chemical structures. In the advanced technology development facility (ATDF) of International SEMATECH we have developed benchmarking methodology to provided initial screening data on lithographic and etch performance on a number of 193 nm resists to our member companies. This paper outlines our benchmarking approach and gives initial benchmarking results for the etch performance.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128684275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.963016
T. Futatsuki, Y. Tajima, T. Masuda, T. Abe, S. Tanzawa, S. Hiroki
We propose a new capture/recovery technology to reduce emissions of perfluorocompounds (PFCs) from semiconductor industry. The conventional capture/recovery technology has some problems in its repurification step. The cryogenic distillation needs a huge distillation tower and much power for refrigeration. On-site capture/recovery is not viable by the cryogenic distillation, because the system is economically feasible only with a large-scale operation. The continuous gas chromatography technology is a compact alternative to the conventional repurification method. The system is composed of the series of separation columns, vacuum pumps and automatic valves. The mixed PFCs are separated by the difference of the affinity for the column. Only the perfectly separated PFCs are output and the others are injected to the next column. By recycling the PFC mixture, which was not separated by the single column, the continuous gas chromatography outputs the pure PFCs continuously. The system is compact and it can operate with low energy consumption. Moreover, it can separate CF/sub 4/ and NF/sub 3/, which can not be separated by a cryogenic distillation.
{"title":"Low cost and compact solution for recycling PFCs by the continuous gas chromatography","authors":"T. Futatsuki, Y. Tajima, T. Masuda, T. Abe, S. Tanzawa, S. Hiroki","doi":"10.1109/ISSM.2001.963016","DOIUrl":"https://doi.org/10.1109/ISSM.2001.963016","url":null,"abstract":"We propose a new capture/recovery technology to reduce emissions of perfluorocompounds (PFCs) from semiconductor industry. The conventional capture/recovery technology has some problems in its repurification step. The cryogenic distillation needs a huge distillation tower and much power for refrigeration. On-site capture/recovery is not viable by the cryogenic distillation, because the system is economically feasible only with a large-scale operation. The continuous gas chromatography technology is a compact alternative to the conventional repurification method. The system is composed of the series of separation columns, vacuum pumps and automatic valves. The mixed PFCs are separated by the difference of the affinity for the column. Only the perfectly separated PFCs are output and the others are injected to the next column. By recycling the PFC mixture, which was not separated by the single column, the continuous gas chromatography outputs the pure PFCs continuously. The system is compact and it can operate with low energy consumption. Moreover, it can separate CF/sub 4/ and NF/sub 3/, which can not be separated by a cryogenic distillation.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115867702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962953
Tatsuya Koito, K. Hirano, K. Nakabeppu
Developed an effective removal solvent for photoresist and its ashing residue for use in copper wire/low-dielectric interlayer devices that significantly lowers the risk of harming the environment. The inhibition of Cu corrosion is very important in these devices, and benzotriazole (BTA, C/sub 6/H/sub 5/N/sub 3/) is usually used as the corrosion inhibitor. However, BTA creates mutagenicity and biodegrades poorly. We investigated several typical heterocyclic nitrogen compounds such as Cu inhibitor to replace BTA and studied their optimum compositions. We found that uric acid (C/sub 5/N/sub 4/O/sub 3/) was the best corrosion inhibitor for Cu. Moreover, this remover which is composed mainly of amino alcohol, uric acid, and H/sub 2/O can be applied to low-k films by optimizing its H/sub 2/O ratio. It not only effectively removes the ashing residue on Cu/low-k devices, but also effectively reduces the environmental impact because the rinse wastewater containing remover can be completely treated at the fabrication site with ordinary biological processes.
{"title":"An environmentally friendly photoresist and ashing residue remover for Cu/low-k devices","authors":"Tatsuya Koito, K. Hirano, K. Nakabeppu","doi":"10.1109/ISSM.2001.962953","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962953","url":null,"abstract":"Developed an effective removal solvent for photoresist and its ashing residue for use in copper wire/low-dielectric interlayer devices that significantly lowers the risk of harming the environment. The inhibition of Cu corrosion is very important in these devices, and benzotriazole (BTA, C/sub 6/H/sub 5/N/sub 3/) is usually used as the corrosion inhibitor. However, BTA creates mutagenicity and biodegrades poorly. We investigated several typical heterocyclic nitrogen compounds such as Cu inhibitor to replace BTA and studied their optimum compositions. We found that uric acid (C/sub 5/N/sub 4/O/sub 3/) was the best corrosion inhibitor for Cu. Moreover, this remover which is composed mainly of amino alcohol, uric acid, and H/sub 2/O can be applied to low-k films by optimizing its H/sub 2/O ratio. It not only effectively removes the ashing residue on Cu/low-k devices, but also effectively reduces the environmental impact because the rinse wastewater containing remover can be completely treated at the fabrication site with ordinary biological processes.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115720164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.962960
H. Maeda, Y. Imai, T. Koyama, M. K. Mazumder, K. Fukumoto, Y. Mashiko
We have developed a nanoscale fault isolation technique based on conducting atomic force microscopy (AFM). Using this technique, we located the failure points of junction leakage and gate oxide leakage with high accuracy. Furthermore, we obtained the I-V curves by direct probing of 0.2 /spl mu/m contact plugs and verified the junction leakage failure model. This technique is useful for nanoscale fault isolation. It has the additional advantage of being available for samples without interconnects or electrodes, so that it can be applied to physical analysis of the samples after removal of metal layers or in-line inspection during the fabrication process.
{"title":"Nanoscale fault isolation technique by conducting atomic force microscopy","authors":"H. Maeda, Y. Imai, T. Koyama, M. K. Mazumder, K. Fukumoto, Y. Mashiko","doi":"10.1109/ISSM.2001.962960","DOIUrl":"https://doi.org/10.1109/ISSM.2001.962960","url":null,"abstract":"We have developed a nanoscale fault isolation technique based on conducting atomic force microscopy (AFM). Using this technique, we located the failure points of junction leakage and gate oxide leakage with high accuracy. Furthermore, we obtained the I-V curves by direct probing of 0.2 /spl mu/m contact plugs and verified the junction leakage failure model. This technique is useful for nanoscale fault isolation. It has the additional advantage of being available for samples without interconnects or electrodes, so that it can be applied to physical analysis of the samples after removal of metal layers or in-line inspection during the fabrication process.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114776932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-08DOI: 10.1109/ISSM.2001.963022
J. Frickinger, J. Bugler, G. Zielonka, H. Ryssel, M. Hans Dudenhausen, M. Fritzsche, M. Shopbell
With the advent of full minienvironment technology in mass production, FOUP (front opening unified pod) and FOSB (front opening shipping box) become critical points in semiconductor manufacturing. Cleaning of FOUPs and transportation effects seem to have a major influence on the quality of the interior of such minienvironments. Cleanability of FOUPs was investigated in this study. Different components of FOUPs were analyzed individually and different cleaning tools were used for cleaning the FOUPs. A special procedure revealed critical parts in the architecture of the FOUPs and in the performance of the cleaning tools. Preliminary transportation experiments point towards electrostatic effects during shipping of wafers.
{"title":"FOUP cleaning - FOSB transportation: a challenge for manufacturing on 300 mm wafers","authors":"J. Frickinger, J. Bugler, G. Zielonka, H. Ryssel, M. Hans Dudenhausen, M. Fritzsche, M. Shopbell","doi":"10.1109/ISSM.2001.963022","DOIUrl":"https://doi.org/10.1109/ISSM.2001.963022","url":null,"abstract":"With the advent of full minienvironment technology in mass production, FOUP (front opening unified pod) and FOSB (front opening shipping box) become critical points in semiconductor manufacturing. Cleaning of FOUPs and transportation effects seem to have a major influence on the quality of the interior of such minienvironments. Cleanability of FOUPs was investigated in this study. Different components of FOUPs were analyzed individually and different cleaning tools were used for cleaning the FOUPs. A special procedure revealed critical parts in the architecture of the FOUPs and in the performance of the cleaning tools. Preliminary transportation experiments point towards electrostatic effects during shipping of wafers.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127513799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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