Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)最新文献

英文中文

Evaluation Of Lithographic Performance Of X-Ray Stepper XS-1 x射线步进机XS-1光刻性能评价

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729924

T. Taguchi, S. Mitsui, Y. Tanaka, K. Fujii, S. Sugihara, K. Yamaguchi, Y. Kikuchi, S. Tsuboi, H. Aoyama, N. Nakayama, K. Marumoto, M. Yamabe, K. Suzuki, Y. Gomei, T. Hisatsugu, M. Fukuda, M. Suzuki, T. Haga, S. Itabashi, H. Morita

T. Taguchi, S. Mitsui, Y. Tanaka, K. Fujii, S. Sugihara, K. Yamaguchi, Y. Kikuchi, S. Tsuboi, H. Aoyama, N. Nakayama, K. Marumoto, M. Yamabe, K. Suzdci, Y. Gomei and T. Hisatsugu Association of Super-Advanced Electronics Technologies (ASET) c/o NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01 98, Japan M. Fukuda, M. Suzuki, T. Haga, S . Itabashi and H. Morita NTT System Electronics Laboratories, 31 Morinosato Wakamiya, Atsugi 243-01 98, Japan

T Y三井,田口,S。田中,藤井,S K。Sugihara山口,K。Y。菊池,S Tsuboi), H .青山K, N .中山昭Marumoto Yamabe, K, M。Suzdci Gomei和T, Y。Hisatsugu协会Super-Advanced电子科技(资产)c / o大本营,3 - 1系统电子实验室,Morinosato Wakamiya武器243-01 98,日本福田,M M。铃木Haga, S, T。Itabashi和H. Morita系统电子实验室，31 Morinosato Wakamiya, Atsugi 243-01，日本

引用次数: 0

Simulation Of Electron Trajectory In The Cell-Projection Lithography Optical System 细胞投影光刻光学系统中电子轨迹的模拟

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730010

K. Yamaguchi, M. Kotera

引用次数: 0

Improvement Of Overlay Accuracy In SR Lithography For Gigabit-Scale Dram Fabrication 千兆级Dram制造中SR光刻覆盖精度的提高

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730006

M. Suita, T. Hifumi, H. Sumitani, K. Itoga, H. Ootera, K. Marumoto, W. Wakamiya, T. Matsumoto, T. Yamamoto, R. Edo, S. Ohishi, K. Sentoku

Muneyoshi Suita, Takashi Hifumi, Hiroaki Sumitani, Kenji Itoga, Hiroki Ootera and Kenji Marumoto Advanced Technology R&D Center, Mitsubishi Electric Corp., 8-1 -1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661 -8661, Japan Wataru Wakamiya ULSl Laboratory, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan Matsumoto, Takeshi Yamamoto, Ryo Edo, Satoru Ohishi and Koichi Sentoku Nanotechnology Research Center, Canon Inc., 20-2, Kiyohara Kogyo-Danchi, Utsunomiya, Tochigi, 321 -32, Japan

Muneyoshi Suita, Takashi Hifumi, Hiroaki Sumitani, Kenji Itoga, Hiroki Ootera and Kenji Marumoto Advanced Technology R&D Center, Mitsubishi Electric Corp., 8-1 -1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661 -8661, Japan Wataru Wakamiya ULSl Laboratory, Mitsubishi Electric Corp、4-1, Mizuhara, Itami, Hyogo 664, Japan Matsumoto, Takeshi Yamamoto, Ryo Edo, Satoru Ohishi and Koichi Sentoku Nanotechnology Research Center, Canon Inc.

引用次数: 0

Novel Fabrication Of Comb Drive Actuator Using RIE Of Polysilicon And [110] Si Anisotropic Bulk Etching In KOH 利用多晶硅的RIE和[110]硅各向异性体刻蚀在KOH中制作梳子驱动驱动器的新方法

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1117/12.324297

Hyung-Taek Lim, Yong-Kweon Kim

A bulk-micromachined interdigitated comb actuator supported by surface-micromachined polysilicon springs is proposed and fabricated for excitation of resonating momentum. The excitation force electrically generated by the interdigitated comb pair with a 420 height of (110) wafer is more effective than that obtained using a comb pair with a few height fabricated by a surface micromachining technique. The geometry of the interdigitated comb finger pair is 420 high, 20 wide, 5 apart from the neighboring interdigitated comb finger, respectively. A (110) oriented 420-thick Si wafer is used to fabricate the interdigitated comb electrode array using the technique of anisotropic bulk etching in KOH aqueous solution. A 5-thick phosphorous-doped LPCVD polysilicon film is used for fabrication of the flexures of the comb actuator using the technique of reactive ion etching. Repetition of the LPCVD Si3N4 film deposition and reactive ion etching process builds a Si3N4 structure, which envelopes and protects the released polysilicon structure from KOH aqueous etchant without an additional mask for passivation patterning. Using a double-sided aligned fabrication technique realizes not only polysilicon flexures formation on both sides of the actuator but also removal of two slant (111) planes in concave corners of the interdigitated comb finger array, which appear during (110) Si orientation-dependent etching and limit the interdigitated comb actuator design.

提出并制作了一种由表面微加工多晶硅弹簧支撑的本体微加工交错梳状驱动器，用于激发共振动量。由高度为420(110)晶圆的交叉梳对产生的电激力比用表面微加工技术制造的高度较小的梳对产生的电激力更有效。指间梳指对的几何高度为420，宽度为20，与相邻指间梳指之间的距离为5。采用KOH水溶液中各向异性体刻蚀技术，利用(110)取向的420厚硅片制备了交错梳状电极阵列。采用反应离子刻蚀技术，采用5厚掺磷LPCVD多晶硅薄膜制备梳状致动器的挠曲。重复LPCVD Si3N4薄膜沉积和反应离子蚀刻过程构建了Si3N4结构，该结构可以包裹并保护释放的多晶硅结构免受KOH水性蚀刻的影响，而无需额外的钝化图案掩膜。采用双面对齐制造技术不仅实现了在致动器两侧形成多晶硅挠曲，而且还消除了在(110)Si取向相关蚀刻过程中出现的两个斜(111)面，限制了互指梳状致动器的设计。

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引用次数: 0

Micromachined Optical Components Integrated With Photodiode 集成光电二极管的微机械光学元件

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730039

M. Sasaki, Y. Arai, H. Takebe, K. Hane

Si micromachining gives new optical component intrgiated with the semiconductor drvit c. The optical component including the photodetector is i d d enabling the beam iritensity rrioriitor without additional elements. For the function of some optical components (e.g.. grating, pinhole), t he mechanical struct lire is impoi tant. Si m i c lomachining technology c dn offm t he accurate mechanical structure. In this study. we have fabricated the I iarisparent posit ion sensot. and the pinhole integrated with the photodiode

硅微加工提供了与半导体驱动器集成的新型光学元件。包括光电探测器在内的光学元件是硅微加工，无需额外元件即可实现光束强度反射。对于某些光学元件的功能(例如…光栅(针孔)，其机械结构寿命是重要的。采用精密机械加工技术，可获得精确的机械结构。在这项研究中。我们制作了隐形位置传感器。针孔与光电二极管集成在一起

引用次数: 0

Characterization Of The Nitrided GaAs Thin Layers After Rapid Thermal Annealing By Using Raman Scattering 快速热退火后氮化GaAs薄层的拉曼散射表征

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730048

E. Koh, Young Ju Park, E. Kim, S. Choh

By using Raman spectroscopy, we examine defects generated from the nitridation of a GaAs surface performed by a nitrogen electron cyclotron resonance (ECR) plasma at various temperatures and its changed properties after the isochronal (15sec) rapid thermal annealing (RTA) at 750°C, 850°C and 950°C. The unpolarized Raman spectra taken from the nitrided samples show that the bandwidths and the peak frequencies for LO phonon band were broader and downshifted due to result from the increased nitridation temperature, respectively, but the spectra obtained after RTA are inclined to recover to the bandwidth and the peak frequencies of the un-nitrided sample. And the height ratio of TO/LO is also decreased. We estimate the correlation length for each sample from the relationship between the Raman shift of LO phonon and the broadening as a function of correlation length, and show that the point defects can be annealed out by annealing processes. I . INTRODUCTION Nitridation technique has been used for the formation of a thin nitrided buffer layer on which high quality nitrided films can be formed, particularly, for the growth of a GaN layer. The Raman studies in relation to semiconductors have mainly concentrated on the bulk materials, the epitaxial layers, and the surface damaged by ion implantation which generates large strains. However, studies on thin nitrided layers have rarely been reported because the surface modification of the nitridation causes much smaller strains compared to that of the ion implantation. In this work, we investigate defects generated from the nitridation process and especially its changed properties after RTA by using Raman scattering. 11 . EXPERIMENTAL The samples used in this work were n-type (001) GaAs. Nitridation was performed at various temperatures by ECR plasma power of 1OOW. Each nitrided sample was applied isochronal (1 Ssec) rapid thermal annealing (RTA) at 750 "C, 850°C and 950 "C. Raman spectra were measured from an oblique forward scattering geometry (0~160") in order to obtain more information from the near surface region. III. RESULTS AND DISCUSSION Only the LO phonon band for GaAs is allowed by the Raman selection rule, but the LO and the TO phonons are allowed for the un-nitrided sample as shown in Fig. 1. Thus the un-nitrided sample consists with somewhat random crystallographic orientation and its measured Raman spectrum is regarded as a reference to the other samples. Figure 1 shows the unpolarized Raman spectra taken from the un-nitrided GaAs, the nitrided GaAs at 550°C, and GaAs nitrided at 550°C after RTA at 95OoC, respectively. For the LO phonon band of the nitrided samples, the bandwidths are broader and the peak frequency is downshifted as un-nitrided sample, but in the case of the annealed samples the bandwidth and the peak frequency are narrower and upshifted as the nitrided samples, respectively. And the height ratio of TO/LO is decreased, especially at the sample after RTA. Fig. 2 summarizes the

利用拉曼光谱研究了氮电子回旋共振(ECR)等离子体在不同温度下氮化GaAs表面产生的缺陷，以及在750°C、850°C和950°C等时(15秒)快速热退火(RTA)后其性能的变化。从氮化样品的非极化拉曼光谱中可以看出，由于氮化温度的升高，LO声子带的带宽和峰值频率分别变宽和下降，但RTA后的光谱倾向于恢复到未氮化样品的带宽和峰值频率。TO/LO的高度比也有所降低。根据LO声子的拉曼位移与展宽随相关长度的关系估计了每个样品的相关长度，并表明点缺陷可以通过退火过程退火。我。氮化技术已被用于形成薄的氮化缓冲层，其上可以形成高质量的氮化膜，特别是用于氮化镓层的生长。与半导体相关的拉曼研究主要集中在块体材料、外延层和离子注入引起的大应变损伤表面。然而，对薄氮化层的研究很少报道，因为与离子注入相比，氮化表面修饰引起的应变要小得多。本文利用拉曼散射技术研究了氮化过程中产生的缺陷，特别是氮化过程中氮化反应后氮化反应性能的变化。11。实验本工作使用的样品为n型(001)砷化镓。采用ECR等离子体功率为10w，在不同温度下进行氮化。每个氮化样品分别在750℃、850℃和950℃下进行等时(1 Ssec)快速热退火(RTA)，从倾斜前向散射几何(0~160”)测量拉曼光谱，以便从近表面区域获得更多信息。3如图1所示，拉曼选择规则只允许GaAs的LO声子带，而非氮化样品则允许LO声子带和TO声子带。因此，未氮化样品的晶体取向具有一定的随机性，其测量的拉曼光谱可作为其他样品的参考。图1分别为未氮化GaAs、550℃时的氮化GaAs和550℃时的氮化GaAs经过95OoC RTA后的非极化拉曼光谱。对于氮化样品的LO声子带，未氮化样品的带宽更宽，峰值频率下降，而退火样品的带宽和峰值频率分别与氮化样品的带宽和峰值频率更窄和上移。并且在RTA后的样品中，TO/LO的高度比减小。图2总结了所有测量样本的带宽和频率的结果。根据LO声子的拉曼位移与展宽的关系，估计了每个样品的相关长度。我们从这些结果中得知，点缺陷如VAS或VAS - asg;主要在210 - 550℃以上的高温下生成。在RTA技术的引导下，表面附近无序的薄层在退火过程中趋于有序。我们研究了等时(15秒)快速热退火(RTA)后氮化GaAs薄层的性能。我们知道，随着氮化温度的升高，氮化量增加，主要在550℃以上高温下产生的点缺陷如V、、、或VAS-As、、等通过RTA技术退火消除，表面附近的无序薄层通过退火显示出有序状态的趋势。图1所示。550°C时氮化GaAs的非极化拉曼光谱在950°C RTA前后的室温下测量。图2所示。950℃退火样品的(ahhe)带宽和(b) LO声子峰值频率随ni1:化温度的变化关系。非rta(实线)3 8 3 7 E 2 3 5 I 3 6 I '

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引用次数: 0

A Study On The High Temperture Platinum Etching 高温铂蚀刻技术的研究

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730053

Hyoun-woo Kim, B. Ju, B. Nam, W. Yoo, C. Kang, J. Moon, Moonyong Lee

1. Introductlon It is necessary to use the platinum as a bottom electrode material of the BST capacitor in highly integratad deveces, however, the Pt etching of the fine patterns is difficult due to the inherent non-reactivity of platinum. It Is revealed that the Pt etch slope of 80' was attained by OJ CI, chemistry b y elevating the substrate temperature up to 160°C. This resutlt is thought to be due to the reactlon of 0 species with TI layer and analyzed by TEM, XPS and AES.

1. 在高集成度器件中，有必要使用铂作为BST电容器的底电极材料，但是由于铂固有的非反应性，对精细图案的Pt蚀刻是困难的。结果表明，通过将衬底温度提高到160℃，OJ - CI化学方法可获得80′的Pt蚀刻斜率。通过TEM, XPS和AES分析，认为该结果是由于0种与TI层的反应所致。

引用次数: 0

Self-Organization Of A Two-Dimensional Array Of Gold Nano-Dots Encapsulated By Alkanethiol 烷硫醇包封金纳米点二维阵列的自组织研究

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1143/JJAP.37.7198

S. Huang, H. Sakaue, S. Shingubara, T. Takahagi

We have studied a fabrication strategy for self-organization of a two-dimensional array of alkanethiol-encapsulated gold nanodots. The fabrication process has two steps: (1) preparation of alkanethiol-encapsulated gold particles from gold colloidal particles; (2) self-organization of an ordered close-packed array of gold nanodots encapsulated by alkanethiol on a substrate. By this method, we succeeded in fabricating a wide range of ordered close-packed monolayers of gold nanodots. The simplicity, flexibility, and practicality of this method makes it a prospective procedure for developing future nanoelectronic devices.

研究了一种自组织链烷硫醇包封金纳米点二维阵列的制备策略。制备工艺分为两个步骤:(1)由金胶体颗粒制备烷硫醇包封金颗粒;(2)在衬底上由烷硫醇包裹的有序密排金纳米点阵列的自组织。通过这种方法，我们成功地制造了各种有序紧密排列的金纳米点单层。该方法的简单、灵活和实用性使其成为开发未来纳米电子器件的一个有前景的方法。

引用次数: 23

Measurement Of Secondary Electron Emission Coefficient From MgO Protecting Layer 氧化镁保护层二次电子发射系数的测量

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730086

E. Choi, H. Oh, Y. Kim, J. Ko, T. Cho, D.I. Kim, G. Cho, S. Kang

引用次数: 0

A New Thermal Characterization Technique For Thermal Actuators Using A Frequency Response Analyzer 一种基于频率响应分析仪的热执行器热特性新技术

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730035

Jae-Youl Lee, Sang-Won Kang

1. Abstract : We have, fabricated microrelays with a thermally driven polycrystalline silicon microbridge actuator and characterized their thermal parameters. An electrical equivalent circuit for microactuator has been modeled in functions of experimental parameters to describe the thermal characteristics. Then thermal conductance and thermal capacitance of microactuator have been derived at once from the model and frequency response analysis results. A radiation source is not needed in this method because signal voltage applied by frequency response analyzer heats microactuator. The method also enables a elimination of error from ambient temperature variation due to independence on ambient temperature. 2. Introduction : Extraction and modeling of thermal parameters is useful to design the speed and power consumption of thermal actuators and thermal sensors. According to reported works [1][2], the measurement of thermal conductance is achieved by dc method and thermal capacitance is measured by ac method using the radiation source. Therefore these are necessary to use both dc method and ac method. Also ac method needs the radiation source. In this work, we have proposed a new thermal characterization technique for thermal actuators using a frequency response analyzer. 3. Results and Discussion : The structure of microrelay is shown in Fig. 1. Microbridges have lengths of 300, 500 and 7 0 0 ~ and widths of 40 and 60m and thickness of 3m. For heavily doped polycrystalline silicon, the temperature characteristics of resistivity obey the linear relationship [3]. Therefore the resistance of polycrystalline silicon microbridge actuator can be assume the equation as Where R, is the resistance of actuator at temperature To, a is the temperature coefficient of resistance, r is the average temperature of actuator, To is the ambient temperature. Fig. 2 shows the simple lumped model for a thermal equivalent circuit of thermal microactuator. The average temperature variation of microactuator can be calculated from the relationship between Jole’s heating generated by signal voltage and the thermal impedance of the thermal equivalent circuit. Since the electrical impedance of microactuator is a function of average temperature variation, the thermal conductance (G,) and thermal capacitance (C,) can be expressed as R ( T ) = R,, {1+ a(T T u ) } (eq. 1)

1. 摘要:制备了热驱动多晶硅微桥致动器微继电器，并对其热参数进行了表征。用实验参数的函数对微执行器等效电路进行了建模，以描述微执行器的热特性。然后根据模型和频响分析结果，同时导出了微执行器的导热系数和热电容。该方法不需要辐射源，因为频率响应分析仪施加的信号电压会加热微执行器。该方法还可以消除由于与环境温度无关而引起的环境温度变化的误差。2. 热参数的提取和建模有助于热致动器和热传感器的速度和功耗设计。据文献报道[1][2]，热导率的测量采用直流法，热电容的测量采用交流法，采用辐射源。因此，有必要同时使用直流法和交流法。交流方法也需要辐射源。在这项工作中，我们提出了一种新的热执行器的热表征技术，使用频率响应分析仪。3.结果与讨论:微继电器结构如图1所示。微桥的长度为300、500和700 ~，宽度为40和60m，厚度为3m。对于重掺杂多晶硅，电阻率的温度特性服从线性关系[3]。因此，多晶硅微桥致动器的电阻可设为式，其中R为致动器在温度为时的电阻，a为电阻的温度系数，R为致动器的平均温度，To为环境温度。图2为热微执行器热等效电路的简单集总模型。根据信号电压产生的焦耳热与热等效电路热阻抗的关系，可以计算微执行器的平均温度变化。由于微执行器的电阻抗是平均温度变化的函数，因此热导(G，)和热容(C，)可以表示为R (T) = R，， {1+ a(T T u)}(式1)。

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