Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730096
Sung-Hak Cho, H. Kumagai, K. Midorikawa, M. Obara
The solid-density plasma formation and induced modification have recently been a major concern since the advent of a high-intensity femtosecond laser.' The solid-density plasma formation is attributed to contributions from both self-focusing from the intensity-dependent refractive index and self-defocusing resulting from ionization.2 Recently, laser-induced bulk modification in transparent materials has been found to yield new tools for ultra-precise three-dimensional micromachining of small, complex-shaped components of transparent dielectrics and polymers for optoelectronic, micro optic, and fiber technological application^.^ This has also provided useful microstructuring technology for application of waveguide and memory in transparent material because refractive index change of induced modification is increasing. Although experiments for bulk modification in solids using high-powr femtosecond laser pulses have been reported: the process of laser-induced modification in a transparent material for number of input pulses have not been clarified yet in detail. In this paper, for the first time to our knowledge, the experimental observation of laser induced bulk modification process in a multimode optical fiber excited by a high intensity (above lo'* W/cm') femtosecond Ti:sapphire laser. In our experiment, a multimode optical fiber was used, which enabled one to easily in situ study the process of laser-induced modification for various number of laser pulses. The schematic diagram of the experimental setup for laser-induced modification in an optical fiber is shown in Fig. 1. A multimode optical fiber (step index) with 200/220 pm corekladding diameters (Newport F-MCC-T) was used. The core of the optical fiber is composed of pure silica. Moreover, the optical fiber is a high-temperature one in order to increase the fiber damage threshold when powerful laser pumping is employed. Ti:sapphire oscillator amplifier laser system (h,=790 nm) with 110 fs pulse duration, 1 W average output power, and 1 kHz repetition rate was used as a pumping source. The number of laser pulse was controlled by electric shutter. The 5-mm-diameter beam was focused through a focusing lens ( f = 60 mm ) and injected into the optical fiber which was located further away than the breakdown point. The average input intensity of the laser beam at the optical fiber location was controlled using neutral-density filters that were inserted between the laser and the focal lens. The length of optical fiber was 10 cm. When the input intensity exceeded 1 . 5 ~ 1 0 ' ~ W/cm2, self-channeled plasma formation was observed with a length of 8 10 mm from the input end of optical fiber. The side views of the plasma formation were observed in situ using a microscope and recorded using a CCD camera. (Fig. 2) When self-channeled plasma formation occurred at the input intensity of 1 . 5 ~ 1 012W/cm', the process of laser-induced modification was obsevered using a microscope by controlling the number
{"title":"Bulk Modification In An Optical Fiber Using a High-Intensity Femtosecond Laser","authors":"Sung-Hak Cho, H. Kumagai, K. Midorikawa, M. Obara","doi":"10.1109/IMNC.1998.730096","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730096","url":null,"abstract":"The solid-density plasma formation and induced modification have recently been a major concern since the advent of a high-intensity femtosecond laser.' The solid-density plasma formation is attributed to contributions from both self-focusing from the intensity-dependent refractive index and self-defocusing resulting from ionization.2 Recently, laser-induced bulk modification in transparent materials has been found to yield new tools for ultra-precise three-dimensional micromachining of small, complex-shaped components of transparent dielectrics and polymers for optoelectronic, micro optic, and fiber technological application^.^ This has also provided useful microstructuring technology for application of waveguide and memory in transparent material because refractive index change of induced modification is increasing. Although experiments for bulk modification in solids using high-powr femtosecond laser pulses have been reported: the process of laser-induced modification in a transparent material for number of input pulses have not been clarified yet in detail. In this paper, for the first time to our knowledge, the experimental observation of laser induced bulk modification process in a multimode optical fiber excited by a high intensity (above lo'* W/cm') femtosecond Ti:sapphire laser. In our experiment, a multimode optical fiber was used, which enabled one to easily in situ study the process of laser-induced modification for various number of laser pulses. The schematic diagram of the experimental setup for laser-induced modification in an optical fiber is shown in Fig. 1. A multimode optical fiber (step index) with 200/220 pm corekladding diameters (Newport F-MCC-T) was used. The core of the optical fiber is composed of pure silica. Moreover, the optical fiber is a high-temperature one in order to increase the fiber damage threshold when powerful laser pumping is employed. Ti:sapphire oscillator amplifier laser system (h,=790 nm) with 110 fs pulse duration, 1 W average output power, and 1 kHz repetition rate was used as a pumping source. The number of laser pulse was controlled by electric shutter. The 5-mm-diameter beam was focused through a focusing lens ( f = 60 mm ) and injected into the optical fiber which was located further away than the breakdown point. The average input intensity of the laser beam at the optical fiber location was controlled using neutral-density filters that were inserted between the laser and the focal lens. The length of optical fiber was 10 cm. When the input intensity exceeded 1 . 5 ~ 1 0 ' ~ W/cm2, self-channeled plasma formation was observed with a length of 8 10 mm from the input end of optical fiber. The side views of the plasma formation were observed in situ using a microscope and recorded using a CCD camera. (Fig. 2) When self-channeled plasma formation occurred at the input intensity of 1 . 5 ~ 1 012W/cm', the process of laser-induced modification was obsevered using a microscope by controlling the number","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130967579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Oogi, T. Ishimura, T. Kamikubo, M. Shimizu, Y. Hattori, T. Iijima, H. Anze, T. Abe, T. Tojo, T. Takigawa
In order to realize a real-time proximity effect correction system, a high-speed, highly accurate hardware system for convolution calculation has been developed. The representative figure method is used in the system. Pipeline architecture and parallel processing architecture are also used. The calculation speed of the system is 500 s for a writing region of 10 ×10 cm. The optimum correction dose has been evaluated using the output data of the convolution system. The error in the correction dose caused by our system is found to be 0.5% at most. These results suggest that a real-time proximity effect correction system can be realized, which can be used for making reticles of Gbit-class dynamic ramdom access memories (DRAMs).
{"title":"High-Speed Convolution System For Real-Time Proximity Effect Correction","authors":"S. Oogi, T. Ishimura, T. Kamikubo, M. Shimizu, Y. Hattori, T. Iijima, H. Anze, T. Abe, T. Tojo, T. Takigawa","doi":"10.1143/JJAP.37.6779","DOIUrl":"https://doi.org/10.1143/JJAP.37.6779","url":null,"abstract":"In order to realize a real-time proximity effect correction system, a high-speed, highly accurate hardware system for convolution calculation has been developed. The representative figure method is used in the system. Pipeline architecture and parallel processing architecture are also used. The calculation speed of the system is 500 s for a writing region of 10 ×10 cm. The optimum correction dose has been evaluated using the output data of the convolution system. The error in the correction dose caused by our system is found to be 0.5% at most. These results suggest that a real-time proximity effect correction system can be realized, which can be used for making reticles of Gbit-class dynamic ramdom access memories (DRAMs).","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116327856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730081
Y. Mitsuoka, K. Nakajima, N. Chiba, H. Muramatsu, T. Ataka
The interest in extremely small solid-state devices and high-density data storage has increased rapidly. To realize such applications, new techniques for fabricating nanometer-scale structures are important, because the conventional optical lithography has an insufficient resolution limited by the wavelength of the light and the numerical aperture of the lenses. In addition to electron beam lithography, scanning probe techniques such as scanning tunneling microscopy (STM)’) and atomic force microscopy (AFM)’) have been investigated to perform surface modifications in a simple way. Near-field optical lithography has a potential to fabricate nanometer-scale patterns more rapidly than the techniques based on STM or AFM. Scanning near-field optical microscopy (SNOM) is a useful method to investigate the possibility of near-field optical lithography for nanometer-scale fabrication. The schematic diagram of our SNOM3) system for the fabrication is shown in Fig. 1. An optical fiber probe has an aperture with a subwavelength at the apex. The optical fiber probe is bent and vibrated vertically to control the distance between the sample and the probe tip. The light source is an Ar ion laser (A = 488 nm) or a He-Cd laser (A = 442 nm). Commercial photoresist, which is sensitive to g line (A = 436 nm), is coated on a Si wafer by a spin-coater. The photoresist film is exposed by the light emitted by the aperture of the optical fiber probe. Changing the incident light intensity or the scanning speed controls the exposure conditions. The exposed photoresist film is developed and observed by AFM. Figure 2 shows the AFM image of the positive photoresist film. The groove width in the photoresit film is about 100 nm. It is nearly equal to the aperture size of the optical fiber probe. In Fig. 3, an aluminum line pattern with the width of 100 nm on a Si wafer was fabricated by the lift-off technique. We have demonstrated that subwavelength patterns can be fabricated using SNOM. These results show the possibility of near-field optical lithography for fabricating nanometer-scale structures.
{"title":"Nanofabrication Using Scanning Near-Field Optical Microscopy","authors":"Y. Mitsuoka, K. Nakajima, N. Chiba, H. Muramatsu, T. Ataka","doi":"10.1109/IMNC.1998.730081","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730081","url":null,"abstract":"The interest in extremely small solid-state devices and high-density data storage has increased rapidly. To realize such applications, new techniques for fabricating nanometer-scale structures are important, because the conventional optical lithography has an insufficient resolution limited by the wavelength of the light and the numerical aperture of the lenses. In addition to electron beam lithography, scanning probe techniques such as scanning tunneling microscopy (STM)’) and atomic force microscopy (AFM)’) have been investigated to perform surface modifications in a simple way. Near-field optical lithography has a potential to fabricate nanometer-scale patterns more rapidly than the techniques based on STM or AFM. Scanning near-field optical microscopy (SNOM) is a useful method to investigate the possibility of near-field optical lithography for nanometer-scale fabrication. The schematic diagram of our SNOM3) system for the fabrication is shown in Fig. 1. An optical fiber probe has an aperture with a subwavelength at the apex. The optical fiber probe is bent and vibrated vertically to control the distance between the sample and the probe tip. The light source is an Ar ion laser (A = 488 nm) or a He-Cd laser (A = 442 nm). Commercial photoresist, which is sensitive to g line (A = 436 nm), is coated on a Si wafer by a spin-coater. The photoresist film is exposed by the light emitted by the aperture of the optical fiber probe. Changing the incident light intensity or the scanning speed controls the exposure conditions. The exposed photoresist film is developed and observed by AFM. Figure 2 shows the AFM image of the positive photoresist film. The groove width in the photoresit film is about 100 nm. It is nearly equal to the aperture size of the optical fiber probe. In Fig. 3, an aluminum line pattern with the width of 100 nm on a Si wafer was fabricated by the lift-off technique. We have demonstrated that subwavelength patterns can be fabricated using SNOM. These results show the possibility of near-field optical lithography for fabricating nanometer-scale structures.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122184583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730043
D. Moon, Y. Ha, Hyun Kong Kim, Sehoon Kim
IJnderstanding the radiation damage cluc to low energy ion boiiibxdnient has IXY~I i o i i c ' ( 1 1 Generally. it has been i-egardcd lor :I lorig I imc . the major issues in sputtering and etching that the energetic keV ion bombardment dcsti-oys the su~face crystalline tixtcture 111) 1 ( I anioiyhization. However, most of the radiation damage studies have been basecl on I A J Energy Electron Dilfraction (LEED). €Iowever. the LEED results are not sensitive. to ih( non-periodic local atomic structure, because the coherent lengths of the electrons lx i i ' i i l l(4 ( ( I the surface are -1 to 10nni. It has been shown that niedlum energq ion scalterinK spectroscopy (i?lEIS 1 is a powerid tool foiinvesligating atomic stiiictiu-e and comwisi l ion profiles with a couple of atomic layer depth resolution. Since the channeling and blocl~ii rg effects are mainly detei-nined by the neighboring atoms, the stiiicti1ral infomiations (~ l ) t~ i i i ivd from MEIS are local in the nature in contrast to the periodic long range ordered st i -uc~l i i i~c €rom LEED. the radiation damage formed by low enei-gk ion beam sput tei-ing. Therefore, MEIS has unique features to probe local s~-~ichual changc tlut. to
对低能离子辐射损伤的认识一般有IXY~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~(1)。它一直是我最喜欢的东西。在溅射和蚀刻中，高能离子轰击会破坏表面晶状织构的主要问题。然而，大多数的辐射损伤研究都是基于能量电子衍射(LEED)。€Iowever。LEED的结果不敏感。到ih(非周期性局部原子结构)，因为电子的相干长度lx i i i i i l l(4) i表面为-1至10nni。研究表明，铌能量离子散射ink光谱(i?lEIS - 1是一个强大的工具，用于研究原子的科学和化学离子剖面，具有几个原子层深度分辨率。自引导和blocl ~二世rg效果主要由邻近的原子,detei-nined的stiiicti1ral infomiations (~ l) t ~我我我从MEIS试管是当地的自然与周期性的远程命令圣我加州大学~ l我我~ c€罗LEED。低能量gk离子束溅射形成的辐射损伤。因此，MEIS具有独特的特征来探测局部的s~- - -文化变化。来
{"title":"Totally Different Sputter Damage Profiles Of Metal And Si Single Crystal Smrfaccs Investigated By Medium Energy Ion Scattering Spectroscopy","authors":"D. Moon, Y. Ha, Hyun Kong Kim, Sehoon Kim","doi":"10.1109/IMNC.1998.730043","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730043","url":null,"abstract":"IJnderstanding the radiation damage cluc to low energy ion boiiibxdnient has IXY~I i o i i c ' ( 1 1 Generally. it has been i-egardcd lor :I lorig I imc . the major issues in sputtering and etching that the energetic keV ion bombardment dcsti-oys the su~face crystalline tixtcture 111) 1 ( I anioiyhization. However, most of the radiation damage studies have been basecl on I A J Energy Electron Dilfraction (LEED). €Iowever. the LEED results are not sensitive. to ih( non-periodic local atomic structure, because the coherent lengths of the electrons lx i i ' i i l l(4 ( ( I the surface are -1 to 10nni. It has been shown that niedlum energq ion scalterinK spectroscopy (i?lEIS 1 is a powerid tool foiinvesligating atomic stiiictiu-e and comwisi l ion profiles with a couple of atomic layer depth resolution. Since the channeling and blocl~ii rg effects are mainly detei-nined by the neighboring atoms, the stiiicti1ral infomiations (~ l ) t~ i i i ivd from MEIS are local in the nature in contrast to the periodic long range ordered st i -uc~l i i i~c €rom LEED. the radiation damage formed by low enei-gk ion beam sput tei-ing. Therefore, MEIS has unique features to probe local s~-~ichual changc tlut. to","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123311899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729989
O. Toublan, D. Boutin, P. Schiavone
{"title":"Determination Of The CD Dispersion And Proximity Bias Across The Lens Field By Electrical Linewidth Measurements","authors":"O. Toublan, D. Boutin, P. Schiavone","doi":"10.1109/IMNC.1998.729989","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729989","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128917161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730065
J. Park, Y.H. Lee, J. Bae, G. Yeom, J. Song
{"title":"MoSi(N) As A Diffusion Barrier Between Cu And Si","authors":"J. Park, Y.H. Lee, J. Bae, G. Yeom, J. Song","doi":"10.1109/IMNC.1998.730065","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730065","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128172115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729965
Keeho Kim, S. Madhavan, J. Lilygren
1. Motivation Lithography for below 0.25 um generation strongly demands OPC(Optica1 Proximity Correction) technics to achieve the better pattem fidelity that normally improves overlay margin, CD tolerance, Device characteristics such as leakage current margin and etc. The first step to design mask layout having OPC should be simulation. Normally, the main tasks of this simulation step are of making decision the best type and dimension of OPC. However, sometimes real pattern results on wafer level exposed by the mask that is designed with based on simulation, are different from designer’s expectation. This phenomenon is explicitly getting worse and worse due to the increasing of mask error when going to 4 x reticle and aggressive OPC patterns for below 0.25 um generation device. In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.
{"title":"OPC Methodology To Overcome Mask Error Effect On Below 0.25 um Lithography Generation","authors":"Keeho Kim, S. Madhavan, J. Lilygren","doi":"10.1109/IMNC.1998.729965","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729965","url":null,"abstract":"1. Motivation Lithography for below 0.25 um generation strongly demands OPC(Optica1 Proximity Correction) technics to achieve the better pattem fidelity that normally improves overlay margin, CD tolerance, Device characteristics such as leakage current margin and etc. The first step to design mask layout having OPC should be simulation. Normally, the main tasks of this simulation step are of making decision the best type and dimension of OPC. However, sometimes real pattern results on wafer level exposed by the mask that is designed with based on simulation, are different from designer’s expectation. This phenomenon is explicitly getting worse and worse due to the increasing of mask error when going to 4 x reticle and aggressive OPC patterns for below 0.25 um generation device. In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"633 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116479082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730033
M. Jung, D. Kim, S.S. Choi, O.J. Kang, Y. Suh, Y. Kuk
There have been great interests in developing micromachined cantilever stylus, scanning probe based chemical sensor, including thermal probe Sensor and nano-resolution mass and molecule detectors. The microfabricated cantilevers offer various possibilities as chemical sensors such as nanocalorimeters on high resolution mass detectors based on resonance frequency shift. The microcantilever coated with a thin metal layer was recently reported as a high sensitive thermal Sensor when heat was generated by reaction of hydrogen and oxygen on the cantilever in vacuum. Nanoscale mass measurement was reported in particulate mass deposited on microcantilevers using resonance frequency shifl techniques. Bing et al. also proposed a micro cantilever sensor with MHz resonance frequency and a mass resolution of IO-'* g. More recently, vapor adsorption on the micro cantilever surface was also found to create a shift of resonance frequency and angular bending of the bimetallic cantilevefll,2,3,4,5]. In this work, we fabricated a Si3N4 cantilever using micromachining techniques. Initially a Si,N, layer was deposited using low pressure chemical vapor deposition techniques. The cantilever was defined and patterned by photolithography on the front side and etched into the silicon. Finally, the backside etching was performed until both etch fronts meet and the cantilever becomes released. -100nm AJ and 20nm Pt thin film layers were deposited on the backside of the fabricated S13N, cantilever using electron beam evaporator. The temperature change and heat flow across the fabricated bimetallic lever would create angular bending of the bimetallic cantilever. The heat was supplied through a stainless steel block attached to a cantilever-supporting beam. The block was wrapped with a nichrome wire in order to supply heat to the lever. The thenal couple was also attached to the stainless steel block. The hysteris curve of the lever upon heating and cooling was measured without a chemical substance. The chemical substance, tetra decand CH3(CH2),,0H, was used and its theoretical temperature for phase change from solid phase to liquid phase is known to be -31 3K. Very tiny amounts of tetra decanol were placed on top of the bimetallic lever and its thermal response was examined during an endothermic chemical reaction using optical deflection method. The abrupt change of the angular bending of the bimetallic lever due to endothermic chemical reactions was observed at -315K. This introductory experiment presents bimetallic cantilevers as excellent candidates for chemical Sensor (sensitive in mass resolution) in an atmospheric environment. Depending upon chemical reaction, whether it is exothermic or endothermic, specific micro-scale or nano-scale cantilever sensors can be tailored to the specific chemical reaction of the interest.
{"title":"Fabrication Of Bimetallic Cantilevers For Chemical Sensors","authors":"M. Jung, D. Kim, S.S. Choi, O.J. Kang, Y. Suh, Y. Kuk","doi":"10.1109/IMNC.1998.730033","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730033","url":null,"abstract":"There have been great interests in developing micromachined cantilever stylus, scanning probe based chemical sensor, including thermal probe Sensor and nano-resolution mass and molecule detectors. The microfabricated cantilevers offer various possibilities as chemical sensors such as nanocalorimeters on high resolution mass detectors based on resonance frequency shift. The microcantilever coated with a thin metal layer was recently reported as a high sensitive thermal Sensor when heat was generated by reaction of hydrogen and oxygen on the cantilever in vacuum. Nanoscale mass measurement was reported in particulate mass deposited on microcantilevers using resonance frequency shifl techniques. Bing et al. also proposed a micro cantilever sensor with MHz resonance frequency and a mass resolution of IO-'* g. More recently, vapor adsorption on the micro cantilever surface was also found to create a shift of resonance frequency and angular bending of the bimetallic cantilevefll,2,3,4,5]. In this work, we fabricated a Si3N4 cantilever using micromachining techniques. Initially a Si,N, layer was deposited using low pressure chemical vapor deposition techniques. The cantilever was defined and patterned by photolithography on the front side and etched into the silicon. Finally, the backside etching was performed until both etch fronts meet and the cantilever becomes released. -100nm AJ and 20nm Pt thin film layers were deposited on the backside of the fabricated S13N, cantilever using electron beam evaporator. The temperature change and heat flow across the fabricated bimetallic lever would create angular bending of the bimetallic cantilever. The heat was supplied through a stainless steel block attached to a cantilever-supporting beam. The block was wrapped with a nichrome wire in order to supply heat to the lever. The thenal couple was also attached to the stainless steel block. The hysteris curve of the lever upon heating and cooling was measured without a chemical substance. The chemical substance, tetra decand CH3(CH2),,0H, was used and its theoretical temperature for phase change from solid phase to liquid phase is known to be -31 3K. Very tiny amounts of tetra decanol were placed on top of the bimetallic lever and its thermal response was examined during an endothermic chemical reaction using optical deflection method. The abrupt change of the angular bending of the bimetallic lever due to endothermic chemical reactions was observed at -315K. This introductory experiment presents bimetallic cantilevers as excellent candidates for chemical Sensor (sensitive in mass resolution) in an atmospheric environment. Depending upon chemical reaction, whether it is exothermic or endothermic, specific micro-scale or nano-scale cantilever sensors can be tailored to the specific chemical reaction of the interest.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123916343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730100
S.K. Jung, B. Choi, S.I. Kim, C.K. Hyun, B. Min, S. Hwang, J. Park, Y. Kim, E. Kim, S. Min
Single electron tunneling and its application to future VLSI systems has been an important subject extensively studied for the last decade [l]. Many types of materials and ideas have been applied to fabricate and implement single electron devices operating at high temperatures. The self-assembled quantum dot (SAQD) system is one of the attractive candidates for single electron devices since high quality Coulomb islands can be obtained in one-step growth processes. Furthermore, the characteristic energy scale of the devices would enhance because the quantum energy is expected to be added to the classical charging energy. on InGaAs SAQD's. lever-arms with nm spacings. staircases at 77 K and higher temperatures. Figure 1 (a) and (b) show an AFM photos of typical SAQD single electron devices fabricated by the lever-arm technique. The InGaAs SAQD's we have used were grown by an MOCVD technique and the typical diameter of the dots is approximately 20 nm [2]. The aluminum lever-arms with spacings from 200 to 40 nm were fabricated by a standard ebeam exposure and a lift-off process. Figure 2 (a) and (b) show the 77 K current-voltage (I V) and its differential conductance - voltage characteristics.(dUdV - V) of lever - arm device with the gap of 40 nm. Several staircases are clearly identified in both the I-V and the dVdV-V. dI/dV-V of the device with the gap of 150 nm. Clear staircases are also seen. These staircases are originated from the single electron tunneling through SAQD's located in the shortest current path between two lever - arms. In conclusion, self-assembled guantum dot single electron devices are made by the lever-arm technique with the minimum gap spacing of 40 nm and clear staircases are observed in the I-V characteristics. The result of more complicated devices with multiple lever-arms will also be presented at the conference.
{"title":"Self-Assembled Quantum Dot Single Electron Devices","authors":"S.K. Jung, B. Choi, S.I. Kim, C.K. Hyun, B. Min, S. Hwang, J. Park, Y. Kim, E. Kim, S. Min","doi":"10.1109/IMNC.1998.730100","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730100","url":null,"abstract":"Single electron tunneling and its application to future VLSI systems has been an important subject extensively studied for the last decade [l]. Many types of materials and ideas have been applied to fabricate and implement single electron devices operating at high temperatures. The self-assembled quantum dot (SAQD) system is one of the attractive candidates for single electron devices since high quality Coulomb islands can be obtained in one-step growth processes. Furthermore, the characteristic energy scale of the devices would enhance because the quantum energy is expected to be added to the classical charging energy. on InGaAs SAQD's. lever-arms with nm spacings. staircases at 77 K and higher temperatures. Figure 1 (a) and (b) show an AFM photos of typical SAQD single electron devices fabricated by the lever-arm technique. The InGaAs SAQD's we have used were grown by an MOCVD technique and the typical diameter of the dots is approximately 20 nm [2]. The aluminum lever-arms with spacings from 200 to 40 nm were fabricated by a standard ebeam exposure and a lift-off process. Figure 2 (a) and (b) show the 77 K current-voltage (I V) and its differential conductance - voltage characteristics.(dUdV - V) of lever - arm device with the gap of 40 nm. Several staircases are clearly identified in both the I-V and the dVdV-V. dI/dV-V of the device with the gap of 150 nm. Clear staircases are also seen. These staircases are originated from the single electron tunneling through SAQD's located in the shortest current path between two lever - arms. In conclusion, self-assembled guantum dot single electron devices are made by the lever-arm technique with the minimum gap spacing of 40 nm and clear staircases are observed in the I-V characteristics. The result of more complicated devices with multiple lever-arms will also be presented at the conference.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115673365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729973
A. Ray-Chaudhuri
{"title":"Progress In The Development Of Extreme Ultraviolet Lithography Exposure Systems","authors":"A. Ray-Chaudhuri","doi":"10.1109/IMNC.1998.729973","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729973","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125736992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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