Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729907
C. Hwang
Summary form only given. The close cooperation between the government, academic institutions, and cooperations raised the competitive power of the Korean semiconductor industry. With such hard efforts, the Korean semiconductor industry has enhanced the introduction of the next generation DRAMs and contributed greatly to the development of semiconductor equipments, materials, and processes. Along with the memory devices, system LSI has become an important sector in the semiconductor industry. The demand for system LSI is increasing continuously but the infra-structure to support those demands is still immature. Thus, memory devices still remain to be the major product in the Korean semiconductor industry.
{"title":"Prospect Of Korean Semiconductor Industry","authors":"C. Hwang","doi":"10.1109/IMNC.1998.729907","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729907","url":null,"abstract":"Summary form only given. The close cooperation between the government, academic institutions, and cooperations raised the competitive power of the Korean semiconductor industry. With such hard efforts, the Korean semiconductor industry has enhanced the introduction of the next generation DRAMs and contributed greatly to the development of semiconductor equipments, materials, and processes. Along with the memory devices, system LSI has become an important sector in the semiconductor industry. The demand for system LSI is increasing continuously but the infra-structure to support those demands is still immature. Thus, memory devices still remain to be the major product in the Korean semiconductor industry.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133183040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730075
A. Moniwa, T. Terasawa
{"title":"Analysis Of High-Acceleration SEM Images","authors":"A. Moniwa, T. Terasawa","doi":"10.1109/IMNC.1998.730075","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730075","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115187196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730017
H. Kim, T. Noda, H. Sakaki
Nanofabrication using focused-ion-beam (FIB) technique has made it possible to fabricate various nano-structures where electrons exhibit low dimensionality and/or the Coulomb blockade effect [l]. However, single-electron effects are normally observed in these structures only at very low temperature, since the room temperatureoperation is possible only in nm-size devices. Here, we investigate effects of implanted impurities on the transport of AlGaAdGaAs FET by measuring its voltage-current characteristics after FIB implantation with high dose (>10'5cm-2) Ga ions. As the dose increases, the Ga ions are expected to form gallium nanocrystals in the vicinity of projected raqge (Rp) which trap electrons between the channel and the control gate. This process is interesting as .a new phenomenon in nano-structures and may be important as a method to form new single electronmemory devices at room temperature. In this work, we show that a novel memory function can be achieved by using the charge-transfer process between FIB-induced Ga-nanocrystals and a nearby channel. Samples used for transport properties are prepared on a modulation-doped GaAs/AlGaAs single heterostructure grown by molecular beam epitaxy (MBE) on a (001) oriented GaAs substrate. The implantation is performed at room temperature using the lOOkV focused Ga ion beam and 2 ~ 1 0 ' ~ c m ~ dose density. Figure l(a) shows a schematic view of the device structure used in the experiment. It has a channel whose nominal width (W) and length (L) are both 1 ,U m. lOOkV Ga+ ions focused to a spot size of 0.2 , U m are implanted (black lines in Fig. l(b)). The effective channel confined by FIB induced depletion layers is less than 0.2 ,U m. We investigate the drain current Id and the device capacitance C as a function of gate voltage Vg. The reproducible hysteresis is measured on the current (Id)-voltage (Vg) experiments when the control gate voltage is swept back and forth with respect to the source (Fig.2). No hysteresis has been observed in other Ga beam induced FETs fabricated in the same process with a low dose density. There is a possibility that heavy dose of Ga ions has led to the formationof Ga-nanocrystals near the channel (Fig. 1 (c)).Therefore, it is likely that the hysteresis is caused by the charge transfer between Ga-nanocrystals and the effective channel. Note that Ga nanocrystals are formed on the channel due to the unfocused ions and/or lateral spreading of scattered ions. Ga nanocrystals produced as an three-dimensionally confined quantum dot embedded in a capacitor, separated from effectivechannel by a shottky barrier and from the other by a non-doped AlGaAs spacer layer. In this memory device the potentialchange elc associated with the transfer of a single electron is a non-negligible quantity This transistor, in which channel region is locally constricted by highdose Ga-FIB implantation, may, therefore, operate as a kind of single-electron memory device at room temperature with c
{"title":"Memory Effect Involving Fib-Induced Ga-Nanocrystals In GaAs/AIGaAs Heterojunction FETs","authors":"H. Kim, T. Noda, H. Sakaki","doi":"10.1109/IMNC.1998.730017","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730017","url":null,"abstract":"Nanofabrication using focused-ion-beam (FIB) technique has made it possible to fabricate various nano-structures where electrons exhibit low dimensionality and/or the Coulomb blockade effect [l]. However, single-electron effects are normally observed in these structures only at very low temperature, since the room temperatureoperation is possible only in nm-size devices. Here, we investigate effects of implanted impurities on the transport of AlGaAdGaAs FET by measuring its voltage-current characteristics after FIB implantation with high dose (>10'5cm-2) Ga ions. As the dose increases, the Ga ions are expected to form gallium nanocrystals in the vicinity of projected raqge (Rp) which trap electrons between the channel and the control gate. This process is interesting as .a new phenomenon in nano-structures and may be important as a method to form new single electronmemory devices at room temperature. In this work, we show that a novel memory function can be achieved by using the charge-transfer process between FIB-induced Ga-nanocrystals and a nearby channel. Samples used for transport properties are prepared on a modulation-doped GaAs/AlGaAs single heterostructure grown by molecular beam epitaxy (MBE) on a (001) oriented GaAs substrate. The implantation is performed at room temperature using the lOOkV focused Ga ion beam and 2 ~ 1 0 ' ~ c m ~ dose density. Figure l(a) shows a schematic view of the device structure used in the experiment. It has a channel whose nominal width (W) and length (L) are both 1 ,U m. lOOkV Ga+ ions focused to a spot size of 0.2 , U m are implanted (black lines in Fig. l(b)). The effective channel confined by FIB induced depletion layers is less than 0.2 ,U m. We investigate the drain current Id and the device capacitance C as a function of gate voltage Vg. The reproducible hysteresis is measured on the current (Id)-voltage (Vg) experiments when the control gate voltage is swept back and forth with respect to the source (Fig.2). No hysteresis has been observed in other Ga beam induced FETs fabricated in the same process with a low dose density. There is a possibility that heavy dose of Ga ions has led to the formationof Ga-nanocrystals near the channel (Fig. 1 (c)).Therefore, it is likely that the hysteresis is caused by the charge transfer between Ga-nanocrystals and the effective channel. Note that Ga nanocrystals are formed on the channel due to the unfocused ions and/or lateral spreading of scattered ions. Ga nanocrystals produced as an three-dimensionally confined quantum dot embedded in a capacitor, separated from effectivechannel by a shottky barrier and from the other by a non-doped AlGaAs spacer layer. In this memory device the potentialchange elc associated with the transfer of a single electron is a non-negligible quantity This transistor, in which channel region is locally constricted by highdose Ga-FIB implantation, may, therefore, operate as a kind of single-electron memory device at room temperature with c","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124598249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730066
Sootae Lee, J. Park, Min Kim, Sun Rae Kim, Tae Soo, U. Chung, G. Kang
High-density plasma (HDP) CVD has been of great interests in past several years since it produces higheir density films with good water blocking and gap-filling capability. In HDPCVD, deposition and sputter etching occur simultaneously by applying a substrate bias [I]. In addition, the compressive stress of HDPCVD oxide is expected to compensate the tensile stress of metal film. Our recent work, however, shows that the deposition of HDPCVD oxide on metalpatterned wafer increased the absolute bow value of the wafer. In this paper, an abnormal stress behavior of HDPCVD oxide on metal pattern is presented with the experimental results. Metal patterning on the wafers with AI-O.S%Cu films of 600014 or 1400014, was splited by photomasks with different metal pattern density of 47%, 71% and 88%. The magnitude of wafer bow after the deposition of HDPCVD oxide was measured as a function of oxide thickness. The stress behavior of the HDPCVD oxide on poly-Si pattern was also investigated. HDPCVD oxide was deposited alt AMT CENTURA, and the magnitude of wafer bow was meausred by FIX 2900. It is found that the magnitude of wafer bow, increased by the deposition of AI-O.S%Cu metal film, becomes smaller when the metal film of the wafer is patterned, and the final value of wafer bow after the patterning is proportional to the pattern density. Therefore, the magnitude of wafer bow after patterning is expressed as follow [2].
{"title":"The Mechanism Of An Abnormal Stress Behavior Of HDPCVD Oxides On Metal-Patterned Wafer","authors":"Sootae Lee, J. Park, Min Kim, Sun Rae Kim, Tae Soo, U. Chung, G. Kang","doi":"10.1109/IMNC.1998.730066","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730066","url":null,"abstract":"High-density plasma (HDP) CVD has been of great interests in past several years since it produces higheir density films with good water blocking and gap-filling capability. In HDPCVD, deposition and sputter etching occur simultaneously by applying a substrate bias [I]. In addition, the compressive stress of HDPCVD oxide is expected to compensate the tensile stress of metal film. Our recent work, however, shows that the deposition of HDPCVD oxide on metalpatterned wafer increased the absolute bow value of the wafer. In this paper, an abnormal stress behavior of HDPCVD oxide on metal pattern is presented with the experimental results. Metal patterning on the wafers with AI-O.S%Cu films of 600014 or 1400014, was splited by photomasks with different metal pattern density of 47%, 71% and 88%. The magnitude of wafer bow after the deposition of HDPCVD oxide was measured as a function of oxide thickness. The stress behavior of the HDPCVD oxide on poly-Si pattern was also investigated. HDPCVD oxide was deposited alt AMT CENTURA, and the magnitude of wafer bow was meausred by FIX 2900. It is found that the magnitude of wafer bow, increased by the deposition of AI-O.S%Cu metal film, becomes smaller when the metal film of the wafer is patterned, and the final value of wafer bow after the patterning is proportional to the pattern density. Therefore, the magnitude of wafer bow after patterning is expressed as follow [2].","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127132548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730092
T. Irisawa, J. Motohisa, M. Akabori, T. Fukui
Atomically control of the incorporation sites of impurity atoms on the semiconductor surfaces is important for the fabrication of ultimate nano-scale devices. One of the approaches for such purpose is to utilize multi-atomic steps, which are naturally formed on vicinal surfaces with fairly regular spacing during metalorganic vapor phase epitaxial growth (MOVPE) [ l ] . Here we report on the 8 doping of Si on MOVPE grown GaAs vicinal surface, and explore the possibility of selective incorporation of Si along atomic steps. The growth was carried out in a low-pressure MOVPE system with triethylgallium (TEGa), triethylaluminium (TEAI), and arsine (ASH,) as source materials and monosilane (SiH,) as a dopant. toward the[-1101 direction (6 step). The layer sequence and the sample structure are schematically shown in Fig.1. Following GaAs and (AIAs),(GaAs), buffer layers, thick GaAs layer was grown at 600°C in order to form multi-atomic steps on the surface. Next, samples were annealed at 600°C for 30min to form uniform multiatomic steps with equal distance. Si 6 doping layer was formed at 600°C by supplying SiH, under arsine atmosphere during growth interruption. The doping times were changed from 10sec to 1000sec. SiH, partial pressure was kept at 1.25 X lO-'atm. Finally, 500nm undoped GaAs layer was grown as a cap layer at 550°C. The main results are listed below. Substrates were vicinal (001) GaAs with misorientation angles, a of 0" to 5.0"
{"title":"Wire-Like Doping Of Si Atoms At Multiatomic Steps On GaAs[001] Vicinal Surfaces By Metalorganic Vapor Phase Epitaxial Growth","authors":"T. Irisawa, J. Motohisa, M. Akabori, T. Fukui","doi":"10.1109/IMNC.1998.730092","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730092","url":null,"abstract":"Atomically control of the incorporation sites of impurity atoms on the semiconductor surfaces is important for the fabrication of ultimate nano-scale devices. One of the approaches for such purpose is to utilize multi-atomic steps, which are naturally formed on vicinal surfaces with fairly regular spacing during metalorganic vapor phase epitaxial growth (MOVPE) [ l ] . Here we report on the 8 doping of Si on MOVPE grown GaAs vicinal surface, and explore the possibility of selective incorporation of Si along atomic steps. The growth was carried out in a low-pressure MOVPE system with triethylgallium (TEGa), triethylaluminium (TEAI), and arsine (ASH,) as source materials and monosilane (SiH,) as a dopant. toward the[-1101 direction (6 step). The layer sequence and the sample structure are schematically shown in Fig.1. Following GaAs and (AIAs),(GaAs), buffer layers, thick GaAs layer was grown at 600°C in order to form multi-atomic steps on the surface. Next, samples were annealed at 600°C for 30min to form uniform multiatomic steps with equal distance. Si 6 doping layer was formed at 600°C by supplying SiH, under arsine atmosphere during growth interruption. The doping times were changed from 10sec to 1000sec. SiH, partial pressure was kept at 1.25 X lO-'atm. Finally, 500nm undoped GaAs layer was grown as a cap layer at 550°C. The main results are listed below. Substrates were vicinal (001) GaAs with misorientation angles, a of 0\" to 5.0\"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127339198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729914
M. Hori, K. Fujita, M. Ito, T. Goto
1 .Introduction In SiOn/Si selective etching plasmas, fluorocarbon gases are usually employed. The fluorocarbon gases, however, cause serious environmental problems, namely global warning. The production of fluorocarbon gases will be prohibited in the near future. Therefore, development of novel processes using alternative feed gases for avoiding the environmental problems. In this study, we have developed a novel process of SiO2/Si selective etching on the basis of a new idea of radical injection, which enabled us not to use any fluorocarbon gases at all and to control radicals precisely. In this new system of radical injection, polytetrafluoroethylene (PTFE) is ablated by a CO2 laser and species generated by the laser ablation are injected into the etching apparatus. This system has not only great advantage of no use of fluorocarbon gases but also the small capacity of gas feed stock, simplicity of gas flow system and safety. The characteristics of CFx(x=l-3) radical densities and the other molecules with plasma and without plasma were measured by infrared diode laser absorption spectroscopy (IRLAS) and mass spectroscopy. Moreover, SiO2/Si etching using ECR plasma with this new radical feed system was performed.
{"title":"Novel Process Of SiO/sub 2//Si Selective Etching Using New Gas System Against Global Warning","authors":"M. Hori, K. Fujita, M. Ito, T. Goto","doi":"10.1109/IMNC.1998.729914","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729914","url":null,"abstract":"1 .Introduction In SiOn/Si selective etching plasmas, fluorocarbon gases are usually employed. The fluorocarbon gases, however, cause serious environmental problems, namely global warning. The production of fluorocarbon gases will be prohibited in the near future. Therefore, development of novel processes using alternative feed gases for avoiding the environmental problems. In this study, we have developed a novel process of SiO2/Si selective etching on the basis of a new idea of radical injection, which enabled us not to use any fluorocarbon gases at all and to control radicals precisely. In this new system of radical injection, polytetrafluoroethylene (PTFE) is ablated by a CO2 laser and species generated by the laser ablation are injected into the etching apparatus. This system has not only great advantage of no use of fluorocarbon gases but also the small capacity of gas feed stock, simplicity of gas flow system and safety. The characteristics of CFx(x=l-3) radical densities and the other molecules with plasma and without plasma were measured by infrared diode laser absorption spectroscopy (IRLAS) and mass spectroscopy. Moreover, SiO2/Si etching using ECR plasma with this new radical feed system was performed.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"193 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730069
S. Koh, W. Choi, Hyung-Jin Jung, G. Bougrov, E. Kralkina, S. Kondranin, V. Pavlov
Development of ion beam technologies such as ion assisted deposition of thin films, surface modification of materials, and especially utilization of these technologies in industry, require the development of the new generation of the ion sources, which can provide large size ion beams of inert and chemically reactive gases with current density in the range 0.05 1.5 mA/cm2 . In order to provide industry by devices with mentioned parameters the new HF linear ion source (HF LIS) with the size of the extracted ion beam 5x30cm2 was developed. HF LIS consists of gas discharge chamber where the ionization of working gas takes place and ion optic system that utilizes the principle of electrostatic acceleration for ion extraction. The ion beam in HF LIS is extracted from plasma of HF discharge ignited and sustained in HF LIS gas discharge chamber. To ignite and sustain a discharge the HF power is supplied from a high-frequency generator via a matching device to the antenna ends positioned on the extemal surface of gas discharge chamber. To avoid HF power losses the walls of a gas-discharge chamber are made of dielectric (glass, quartz, glass ceramic). To increase the efficiency of highfrequency power input in plasma the gas discharge chamber is placed in a static extemal magnetic field which induction value is chosen from the condition of electrostatic volume plasma waves excitation. The magnetic field shape is taken from the best electron confinement condition. Ion extraction and ion beam formation runs by means of an electrostatic ion optic system consisting of the emitting, accelerating and decelerating electrodes. The emitting electrode is a partially ion-transparent wall under positive potential with respect to the ground. The accelerating electrode is also partially transparent for ions and is under negative potential with respect to the ground. The decelerating electrode is grounded. Tests of the new HF LIS showed reliable operation of the ion source while using inert or reactive working gases as well as high uniformity of the extracted ion beam.
{"title":"New HF Linear Ion Source For Industrial Applications","authors":"S. Koh, W. Choi, Hyung-Jin Jung, G. Bougrov, E. Kralkina, S. Kondranin, V. Pavlov","doi":"10.1109/IMNC.1998.730069","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730069","url":null,"abstract":"Development of ion beam technologies such as ion assisted deposition of thin films, surface modification of materials, and especially utilization of these technologies in industry, require the development of the new generation of the ion sources, which can provide large size ion beams of inert and chemically reactive gases with current density in the range 0.05 1.5 mA/cm2 . In order to provide industry by devices with mentioned parameters the new HF linear ion source (HF LIS) with the size of the extracted ion beam 5x30cm2 was developed. HF LIS consists of gas discharge chamber where the ionization of working gas takes place and ion optic system that utilizes the principle of electrostatic acceleration for ion extraction. The ion beam in HF LIS is extracted from plasma of HF discharge ignited and sustained in HF LIS gas discharge chamber. To ignite and sustain a discharge the HF power is supplied from a high-frequency generator via a matching device to the antenna ends positioned on the extemal surface of gas discharge chamber. To avoid HF power losses the walls of a gas-discharge chamber are made of dielectric (glass, quartz, glass ceramic). To increase the efficiency of highfrequency power input in plasma the gas discharge chamber is placed in a static extemal magnetic field which induction value is chosen from the condition of electrostatic volume plasma waves excitation. The magnetic field shape is taken from the best electron confinement condition. Ion extraction and ion beam formation runs by means of an electrostatic ion optic system consisting of the emitting, accelerating and decelerating electrodes. The emitting electrode is a partially ion-transparent wall under positive potential with respect to the ground. The accelerating electrode is also partially transparent for ions and is under negative potential with respect to the ground. The decelerating electrode is grounded. Tests of the new HF LIS showed reliable operation of the ion source while using inert or reactive working gases as well as high uniformity of the extracted ion beam.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"07 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127211306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729969
H. Gamo, S. Kanemaru, J. Itoh
{"title":"Fabrication Of A Field Emitter Array Monolithically Integrated With Thin-Film-Transistor On Glass","authors":"H. Gamo, S. Kanemaru, J. Itoh","doi":"10.1109/IMNC.1998.729969","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729969","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121738656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730012
T. Yoon, J. Kwon, S. Min, Ki-Bum Kim
{"title":"Si/sub 0.7/Ge/sub 0.3/ Quantum Dot Formation by Interface Agglomeration","authors":"T. Yoon, J. Kwon, S. Min, Ki-Bum Kim","doi":"10.1109/IMNC.1998.730012","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730012","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122107019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730101
K. Matsunaga, D. Kawamura, S. Mimotogi, T. Azuma, Y. Onishi
{"title":"Resist Development Process For Sub-0.15/spl mu/m Lithography By KrF Imaging","authors":"K. Matsunaga, D. Kawamura, S. Mimotogi, T. Azuma, Y. Onishi","doi":"10.1109/IMNC.1998.730101","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730101","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123103559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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