Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730064
Moonsang Kang, Yong-Seo Koo, C. An
A s t h e o p t i c a l band gap decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . The p h o t o c o n d u c t i v i t y was about 1 0 ' 5 1 0 4(Cicm) ' when t h e o p t i c a l band gap was below 1.75eV. The d a r k c o n d u c t i v i t y v a l u e s were i n t h e r a n g e o f 10"l-lO"o(Rcm) l. I n F i g . 2 , t h e r a t i o o f t h e i n f r a r e d a b s o r p t i o n c o e f f i c i e n t azogo t o a2000 and p h o t o c o n d u c t i v i t i e s a r e shown. The a b s o r p t i o n c o e f f i c i e n t a t 2090cm'' i s S i H 2 bond ing mode and 2000cm i s S i H b o n d i n g mode. A s t h e C C Z O ~ O / ~ Z O O O decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . When t h e r a t i o o f t h e d i h y d r i d e t o t h e monohydr ide was below 1 . 5 . h i g h p h o t o c o n d u c t i v i t y was o b t a i n e d . Monohydr ide i n a S i : H f i l m s becomes a more dominant bond ing mode w i t h i n c r e a s i n g p h o t o c o n d u c t i v i t y . We o b t a i n e d h i g h p h o t o c o n d u c t i v i t y a t l ower FWHM as shown i n F i g . 3 . The hydrogen c o n t e n t can be determined f rom t h e wagging mode(Fig.4) a t 640cm" because t h e wagging mode a b s o r p t i o n i s p r o p o r t i o n a l t o t h e t o t a l hydrogen c o n t e n t independent o f t h e bond ing c o n f i g u r a t i o n . The h i g h p h o t o c o n d u c t i v i t y about 10 '5-10 '4(Rcm) ' ' was o b t a i n e d when t h e hydrogen c o n t e n t was 1 8 2 4 a t . t . 3 H2/SiHq dependent data / Temperature depent data Photo A Power dependent data CI r 7 Pressure dependent data I 1E-4 ~ L
{"title":"A Study On The Deposition Of a-Si:H Films For High Photoconductivity","authors":"Moonsang Kang, Yong-Seo Koo, C. An","doi":"10.1109/IMNC.1998.730064","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730064","url":null,"abstract":"A s t h e o p t i c a l band gap decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . The p h o t o c o n d u c t i v i t y was about 1 0 ' 5 1 0 4(Cicm) ' when t h e o p t i c a l band gap was below 1.75eV. The d a r k c o n d u c t i v i t y v a l u e s were i n t h e r a n g e o f 10\"l-lO\"o(Rcm) l. I n F i g . 2 , t h e r a t i o o f t h e i n f r a r e d a b s o r p t i o n c o e f f i c i e n t azogo t o a2000 and p h o t o c o n d u c t i v i t i e s a r e shown. The a b s o r p t i o n c o e f f i c i e n t a t 2090cm'' i s S i H 2 bond ing mode and 2000cm i s S i H b o n d i n g mode. A s t h e C C Z O ~ O / ~ Z O O O decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . When t h e r a t i o o f t h e d i h y d r i d e t o t h e monohydr ide was below 1 . 5 . h i g h p h o t o c o n d u c t i v i t y was o b t a i n e d . Monohydr ide i n a S i : H f i l m s becomes a more dominant bond ing mode w i t h i n c r e a s i n g p h o t o c o n d u c t i v i t y . We o b t a i n e d h i g h p h o t o c o n d u c t i v i t y a t l ower FWHM as shown i n F i g . 3 . The hydrogen c o n t e n t can be determined f rom t h e wagging mode(Fig.4) a t 640cm\" because t h e wagging mode a b s o r p t i o n i s p r o p o r t i o n a l t o t h e t o t a l hydrogen c o n t e n t independent o f t h e bond ing c o n f i g u r a t i o n . The h i g h p h o t o c o n d u c t i v i t y about 10 '5-10 '4(Rcm) ' ' was o b t a i n e d when t h e hydrogen c o n t e n t was 1 8 2 4 a t . t . 3 H2/SiHq dependent data / Temperature depent data Photo A Power dependent data CI r 7 Pressure dependent data I 1E-4 ~ L","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"20 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120910128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730001
K. Song, Don-Hee Lee, Y. Jeon, Chil-Keun Park, H. Noh, Seungyoon Lee, Taeho Lee, Jungsoon Kang, Jinho Ahn
o f Sic as a membrane is aimed to meet stoichiometric composition. Non composition degrades fi lm quality lower elastic modulus, degradation of st3bility, poor optical transmittance, and vulnerability to radiation damage (4). stoichiometric Sic film is achieved with SiH,/CH, ratio of 0.4 a t 500W power, 600°C deposition temperature and this is verified by comparison of profile with Sic single crystal's (Fig. 1). So development of Sic membrane
Sic作为膜的目的是满足化学计量组成。无组分导致薄膜质量下降，弹性模量降低，稳定性下降，光学透射率差，易受辐射损伤(4)。在SiH，/CH，比值为0.4 a / 500W功率，600℃沉积温度下获得化学计量Sic薄膜，并通过与Sic单晶的剖面对比(图1)验证了这一点
{"title":"High-Transmittance SiC Membrane Prepared By ECR Plasma CVD In Combination With Rapid Thermal Annealing","authors":"K. Song, Don-Hee Lee, Y. Jeon, Chil-Keun Park, H. Noh, Seungyoon Lee, Taeho Lee, Jungsoon Kang, Jinho Ahn","doi":"10.1109/IMNC.1998.730001","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730001","url":null,"abstract":"o f Sic as a membrane is aimed to meet stoichiometric composition. Non composition degrades fi lm quality lower elastic modulus, degradation of st3bility, poor optical transmittance, and vulnerability to radiation damage (4). stoichiometric Sic film is achieved with SiH,/CH, ratio of 0.4 a t 500W power, 600°C deposition temperature and this is verified by comparison of profile with Sic single crystal's (Fig. 1). So development of Sic membrane","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116192300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730089
T. Ogino, Y. Homma, H. Hibino, Y. Kunii, H. Omi
Nonlithographic methods of nanofabrication and nanopatterning will be needed for integration of future devices that will be based on new concepts such as quantum effects and single electron charging effects. In nonlithographic techniques, nanostructures are fabricated by self-organization processes. In order to apply these techniques to integrated devices, a template is needed for the nanostructure formation. Because crystal growth and chemical reactions are often initiated at atomic steps, they are the basic surface structure that can be used for a template. One example is quantum-dots grown at the steps during the Stranski-Krastanow growth mode. If the atomic step arrangement on the initial surface can be artificially designed, a quantum dot network can be organized in an orderly manner. Therefore, step arrangement control is one of the key technologies in non lit hog rap hic patterning. Step arrangement on S i ( l l 1 ) surfaces in equilibrium state is determined by the misorientation direction of the substrate and its angle: various types of step arrangement can be obtained.',') For application to integrated devices, the steps must be controlled on a wafer scale. For this purpose, we have developed step rearrangement techniques in which the step motion is controlled by etched patterns fabricated by the conventional lithography and e t~h ing .~ .~) This technique can provide us with atomic-step networks for the templates of self-organized nanostructures. The step motions to be controlled in order to fabricate step networks are divided into two categories: step retreat due to detachment of adatoms at the step edges and step advance due to the attachment. When Si surfaces are heated, the adatoms on the terraces evaporate and the shortage of the adatoms is compensated by the detachment of Si atoms at the step edges, resulting in the step retreat. When Si atoms are deposited on the surface, excess adatoms are preferentially incorporated at step edges unless the diffusion length is too short. During this process, step arrangement is modulated to form a specific att tern.^) In this talk, we will show local and wafer-scale step networks formed by step motion controls on patterned and non-patterned Si(l11) surfaces. Although an ultrahigh vacuum is often used to study the fundamental behaviors of the steps, furnace annealing is more suitable when conventional Si technology is used. We will show step networks fabricated by furnace annealing as well as by heating in ultrahigh vacuum.
{"title":"Atomic-Step-Networks For Nanopatterning On Si Surfaces","authors":"T. Ogino, Y. Homma, H. Hibino, Y. Kunii, H. Omi","doi":"10.1109/IMNC.1998.730089","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730089","url":null,"abstract":"Nonlithographic methods of nanofabrication and nanopatterning will be needed for integration of future devices that will be based on new concepts such as quantum effects and single electron charging effects. In nonlithographic techniques, nanostructures are fabricated by self-organization processes. In order to apply these techniques to integrated devices, a template is needed for the nanostructure formation. Because crystal growth and chemical reactions are often initiated at atomic steps, they are the basic surface structure that can be used for a template. One example is quantum-dots grown at the steps during the Stranski-Krastanow growth mode. If the atomic step arrangement on the initial surface can be artificially designed, a quantum dot network can be organized in an orderly manner. Therefore, step arrangement control is one of the key technologies in non lit hog rap hic patterning. Step arrangement on S i ( l l 1 ) surfaces in equilibrium state is determined by the misorientation direction of the substrate and its angle: various types of step arrangement can be obtained.',') For application to integrated devices, the steps must be controlled on a wafer scale. For this purpose, we have developed step rearrangement techniques in which the step motion is controlled by etched patterns fabricated by the conventional lithography and e t~h ing .~ .~) This technique can provide us with atomic-step networks for the templates of self-organized nanostructures. The step motions to be controlled in order to fabricate step networks are divided into two categories: step retreat due to detachment of adatoms at the step edges and step advance due to the attachment. When Si surfaces are heated, the adatoms on the terraces evaporate and the shortage of the adatoms is compensated by the detachment of Si atoms at the step edges, resulting in the step retreat. When Si atoms are deposited on the surface, excess adatoms are preferentially incorporated at step edges unless the diffusion length is too short. During this process, step arrangement is modulated to form a specific att tern.^) In this talk, we will show local and wafer-scale step networks formed by step motion controls on patterned and non-patterned Si(l11) surfaces. Although an ultrahigh vacuum is often used to study the fundamental behaviors of the steps, furnace annealing is more suitable when conventional Si technology is used. We will show step networks fabricated by furnace annealing as well as by heating in ultrahigh vacuum.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121821639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729978
S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita
A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.
{"title":"Simple Method For Resist CD Prediction","authors":"S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita","doi":"10.1109/IMNC.1998.729978","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729978","url":null,"abstract":"A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133463509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730078
K. Asano, K. Takahashi, T. Nagata, M. Sato, Y. Nara
{"title":"Stitching-Error-Free Overlay Metrology For EB Lithography Using \"One-Shot\" Inspection Target Mark","authors":"K. Asano, K. Takahashi, T. Nagata, M. Sato, Y. Nara","doi":"10.1109/IMNC.1998.730078","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730078","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"71 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730025
Jinchul Kim, Haiwon Lee, Yongwoo Shin, Sunwoo Park
{"title":"Nanometer-scale Lithography Of The Ultrathin Films With Atomic Force Microscopy","authors":"Jinchul Kim, Haiwon Lee, Yongwoo Shin, Sunwoo Park","doi":"10.1109/IMNC.1998.730025","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730025","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114543421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730060
J. W. Bae, G. Yeom, S. Lee, K. Song, J.I. Park, K. Park
I . lntroductilon Transparent conductive oxide(TC0) films have been widely employed as an optical transparent electrode in display devices and photovoltaic cells.[l,2] The development trends for TCO can be summarized into high conductivity, high transmittance, and chemical stability. From a view point of these requirements, TO(Sn02) has many possibilities. TO is an electrical conductor that has high conductivity with good transparency in the visible spectral range and excellent reflectivity in the infrared range. Also TO has the highest chemical stability. It is well known that the high conductivity of Sn02 is caused by both intrinsic defect(oxygen vacancy) and dopant(F, Sb, etc). [3,4,5] Therefore the unique method to obtain high quality transparent conductor is to cause electron degeneracy by introducing non-stoichiometry and appropriate dopants. Tin oxide has been produced by a number of techniques such as spray pyrolysis, DC(or rf)-sputtering, chemical vapor deposition(CVD), etc.[6,7,8,9] Among these techniques, organometallic CVD technique offers several advantages such as good control of film properties and relatively high growth rate on the order of 1 10 nmlsec.(lO] Tetramethyltin(TMT; (CH&Sn) is one of the volatile organotin sources and has good stability in air and moisture. [ I I ] In this study, the effects of deposition temperature and oxygen vacancies on the conductivity and optical properties of the films using oxygen containing ozone instead of pure oxygen have been investigated.
{"title":"Tin Oxide Films Deposited By Ozone Assisted Thermal CVD","authors":"J. W. Bae, G. Yeom, S. Lee, K. Song, J.I. Park, K. Park","doi":"10.1109/IMNC.1998.730060","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730060","url":null,"abstract":"I . lntroductilon Transparent conductive oxide(TC0) films have been widely employed as an optical transparent electrode in display devices and photovoltaic cells.[l,2] The development trends for TCO can be summarized into high conductivity, high transmittance, and chemical stability. From a view point of these requirements, TO(Sn02) has many possibilities. TO is an electrical conductor that has high conductivity with good transparency in the visible spectral range and excellent reflectivity in the infrared range. Also TO has the highest chemical stability. It is well known that the high conductivity of Sn02 is caused by both intrinsic defect(oxygen vacancy) and dopant(F, Sb, etc). [3,4,5] Therefore the unique method to obtain high quality transparent conductor is to cause electron degeneracy by introducing non-stoichiometry and appropriate dopants. Tin oxide has been produced by a number of techniques such as spray pyrolysis, DC(or rf)-sputtering, chemical vapor deposition(CVD), etc.[6,7,8,9] Among these techniques, organometallic CVD technique offers several advantages such as good control of film properties and relatively high growth rate on the order of 1 10 nmlsec.(lO] Tetramethyltin(TMT; (CH&Sn) is one of the volatile organotin sources and has good stability in air and moisture. [ I I ] In this study, the effects of deposition temperature and oxygen vacancies on the conductivity and optical properties of the films using oxygen containing ozone instead of pure oxygen have been investigated.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116669765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730076
M. Kotera, K. Yamaguchi
{"title":"Mechanism Of The Fluoroscopic Measurement Of Sub-Surface Structure Using High Energy Scanning Electron Microscope","authors":"M. Kotera, K. Yamaguchi","doi":"10.1109/IMNC.1998.730076","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730076","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115432043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729964
Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim
We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).
我们开发了一种基于蒙特卡罗的光学接近校正(OPC)程序，该程序可以应用于强色调或半色调相移掩模(PSM)以及二进制掩模。在之前的报告[1]中，我们提出了二进制掩码的智能OPC解决方案。研究表明，通过引入新的目标函数和优化策略，可以获得可制造的OPC掩模。在这项工作中，我们将该算法扩展到PSM。给出了该程序的详细算法和半色调PSM的OPC的几种解决方案。我们的结果的一个例子如图1所示。试验模式为简单的接触孔模式，尺寸为0.4 X 0.4 (AJNA) '。二值掩模的航拍图像如图1 (a)所示。图1 (b)为透射率为9%的半色调PSM的航拍图像。图1 (c)为半色调PSM OPC后的解决方案，显示了航拍图像质量的显著增强。图1 (d)显示了(c)解决方案的抽象，以增强掩模的可制造性。从图中可以看出，与(c)相比，航拍图像的质量略有下降。
{"title":"Monte-Carlo Based Optical Proximity Correction For The Half-Tone Phase Shift Mask","authors":"Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim","doi":"10.1109/IMNC.1998.729964","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729964","url":null,"abstract":"We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124228963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729960
K. Ikeda
Silicon micromachined vacuum encapsulated resonant pressure sensors have been realized and have given several significant solutions for the problems by which the conventional metallic bulk machined resonant sensors have been worried. The problems includes the interference from environmental fluids where resonators are exposed. The interference reduces the quality factor of the resonator and alters the resonant frequency of the resonator. In this paper encapsulated resonant sensors. describes the solutions for the problems by silicon micromachined vacuum Introduction: Accuracy of a resonant sensor is proportional to the quality factor of the resonator. A silicon micromachined vacuum encapsulated resonator has a structure consisted from a micro resonator with in a vacuum micro cavity which isolates the resonator from external fluid. The structure has been realized by using micromachine technology. The technology has made the resonators' application fields extremely spread and has drastically brought manufacturing cost reduction of resonant sensors. The followings give a short review of silicon micromachined vacuum encapsulated resonant pressure sensors. Principle of Resonant Pressure Sensor: A resonant frequency of a bridge of which both ends are f+ed to a surface of a diaphragm is where E; Young's modulus p ; the density I; the moment of inertia A the area of cross section 1; the length of the bridge h; the thickness of the bridge e; strain by applied pressure S; strain sensitivity expressed by Es.(2) n; resonant mode number 12n2 (3' S = n2 (n + 1 / 2)4 From Eq.(l) applied strain (pressure) is proportional to square of the resonant frequency. Generally resonant frequency is obtained by measuring of frequency of self-
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