Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730064
Moonsang Kang, Yong-Seo Koo, C. An
A s t h e o p t i c a l band gap decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . The p h o t o c o n d u c t i v i t y was about 1 0 ' 5 1 0 4(Cicm) ' when t h e o p t i c a l band gap was below 1.75eV. The d a r k c o n d u c t i v i t y v a l u e s were i n t h e r a n g e o f 10"l-lO"o(Rcm) l. I n F i g . 2 , t h e r a t i o o f t h e i n f r a r e d a b s o r p t i o n c o e f f i c i e n t azogo t o a2000 and p h o t o c o n d u c t i v i t i e s a r e shown. The a b s o r p t i o n c o e f f i c i e n t a t 2090cm'' i s S i H 2 bond ing mode and 2000cm i s S i H b o n d i n g mode. A s t h e C C Z O ~ O / ~ Z O O O decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . When t h e r a t i o o f t h e d i h y d r i d e t o t h e monohydr ide was below 1 . 5 . h i g h p h o t o c o n d u c t i v i t y was o b t a i n e d . Monohydr ide i n a S i : H f i l m s becomes a more dominant bond ing mode w i t h i n c r e a s i n g p h o t o c o n d u c t i v i t y . We o b t a i n e d h i g h p h o t o c o n d u c t i v i t y a t l ower FWHM as shown i n F i g . 3 . The hydrogen c o n t e n t can be determined f rom t h e wagging mode(Fig.4) a t 640cm" because t h e wagging mode a b s o r p t i o n i s p r o p o r t i o n a l t o t h e t o t a l hydrogen c o n t e n t independent o f t h e bond ing c o n f i g u r a t i o n . The h i g h p h o t o c o n d u c t i v i t y about 10 '5-10 '4(Rcm) ' ' was o b t a i n e d when t h e hydrogen c o n t e n t was 1 8 2 4 a t . t . 3 H2/SiHq dependent data / Temperature depent data Photo A Power dependent data CI r 7 Pressure dependent data I 1E-4 ~ L
{"title":"A Study On The Deposition Of a-Si:H Films For High Photoconductivity","authors":"Moonsang Kang, Yong-Seo Koo, C. An","doi":"10.1109/IMNC.1998.730064","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730064","url":null,"abstract":"A s t h e o p t i c a l band gap decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . The p h o t o c o n d u c t i v i t y was about 1 0 ' 5 1 0 4(Cicm) ' when t h e o p t i c a l band gap was below 1.75eV. The d a r k c o n d u c t i v i t y v a l u e s were i n t h e r a n g e o f 10\"l-lO\"o(Rcm) l. I n F i g . 2 , t h e r a t i o o f t h e i n f r a r e d a b s o r p t i o n c o e f f i c i e n t azogo t o a2000 and p h o t o c o n d u c t i v i t i e s a r e shown. The a b s o r p t i o n c o e f f i c i e n t a t 2090cm'' i s S i H 2 bond ing mode and 2000cm i s S i H b o n d i n g mode. A s t h e C C Z O ~ O / ~ Z O O O decreased, p h o t o c o n d u c t i v i t y i n c r e a s e d . When t h e r a t i o o f t h e d i h y d r i d e t o t h e monohydr ide was below 1 . 5 . h i g h p h o t o c o n d u c t i v i t y was o b t a i n e d . Monohydr ide i n a S i : H f i l m s becomes a more dominant bond ing mode w i t h i n c r e a s i n g p h o t o c o n d u c t i v i t y . We o b t a i n e d h i g h p h o t o c o n d u c t i v i t y a t l ower FWHM as shown i n F i g . 3 . The hydrogen c o n t e n t can be determined f rom t h e wagging mode(Fig.4) a t 640cm\" because t h e wagging mode a b s o r p t i o n i s p r o p o r t i o n a l t o t h e t o t a l hydrogen c o n t e n t independent o f t h e bond ing c o n f i g u r a t i o n . The h i g h p h o t o c o n d u c t i v i t y about 10 '5-10 '4(Rcm) ' ' was o b t a i n e d when t h e hydrogen c o n t e n t was 1 8 2 4 a t . t . 3 H2/SiHq dependent data / Temperature depent data Photo A Power dependent data CI r 7 Pressure dependent data I 1E-4 ~ L","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"20 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120910128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730001
K. Song, Don-Hee Lee, Y. Jeon, Chil-Keun Park, H. Noh, Seungyoon Lee, Taeho Lee, Jungsoon Kang, Jinho Ahn
o f Sic as a membrane is aimed to meet stoichiometric composition. Non composition degrades fi lm quality lower elastic modulus, degradation of st3bility, poor optical transmittance, and vulnerability to radiation damage (4). stoichiometric Sic film is achieved with SiH,/CH, ratio of 0.4 a t 500W power, 600°C deposition temperature and this is verified by comparison of profile with Sic single crystal's (Fig. 1). So development of Sic membrane
Sic作为膜的目的是满足化学计量组成。无组分导致薄膜质量下降，弹性模量降低，稳定性下降，光学透射率差，易受辐射损伤(4)。在SiH，/CH，比值为0.4 a / 500W功率，600℃沉积温度下获得化学计量Sic薄膜，并通过与Sic单晶的剖面对比(图1)验证了这一点
{"title":"High-Transmittance SiC Membrane Prepared By ECR Plasma CVD In Combination With Rapid Thermal Annealing","authors":"K. Song, Don-Hee Lee, Y. Jeon, Chil-Keun Park, H. Noh, Seungyoon Lee, Taeho Lee, Jungsoon Kang, Jinho Ahn","doi":"10.1109/IMNC.1998.730001","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730001","url":null,"abstract":"o f Sic as a membrane is aimed to meet stoichiometric composition. Non composition degrades fi lm quality lower elastic modulus, degradation of st3bility, poor optical transmittance, and vulnerability to radiation damage (4). stoichiometric Sic film is achieved with SiH,/CH, ratio of 0.4 a t 500W power, 600°C deposition temperature and this is verified by comparison of profile with Sic single crystal's (Fig. 1). So development of Sic membrane","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116192300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730089
T. Ogino, Y. Homma, H. Hibino, Y. Kunii, H. Omi
Nonlithographic methods of nanofabrication and nanopatterning will be needed for integration of future devices that will be based on new concepts such as quantum effects and single electron charging effects. In nonlithographic techniques, nanostructures are fabricated by self-organization processes. In order to apply these techniques to integrated devices, a template is needed for the nanostructure formation. Because crystal growth and chemical reactions are often initiated at atomic steps, they are the basic surface structure that can be used for a template. One example is quantum-dots grown at the steps during the Stranski-Krastanow growth mode. If the atomic step arrangement on the initial surface can be artificially designed, a quantum dot network can be organized in an orderly manner. Therefore, step arrangement control is one of the key technologies in non lit hog rap hic patterning. Step arrangement on S i ( l l 1 ) surfaces in equilibrium state is determined by the misorientation direction of the substrate and its angle: various types of step arrangement can be obtained.',') For application to integrated devices, the steps must be controlled on a wafer scale. For this purpose, we have developed step rearrangement techniques in which the step motion is controlled by etched patterns fabricated by the conventional lithography and e t~h ing .~ .~) This technique can provide us with atomic-step networks for the templates of self-organized nanostructures. The step motions to be controlled in order to fabricate step networks are divided into two categories: step retreat due to detachment of adatoms at the step edges and step advance due to the attachment. When Si surfaces are heated, the adatoms on the terraces evaporate and the shortage of the adatoms is compensated by the detachment of Si atoms at the step edges, resulting in the step retreat. When Si atoms are deposited on the surface, excess adatoms are preferentially incorporated at step edges unless the diffusion length is too short. During this process, step arrangement is modulated to form a specific att tern.^) In this talk, we will show local and wafer-scale step networks formed by step motion controls on patterned and non-patterned Si(l11) surfaces. Although an ultrahigh vacuum is often used to study the fundamental behaviors of the steps, furnace annealing is more suitable when conventional Si technology is used. We will show step networks fabricated by furnace annealing as well as by heating in ultrahigh vacuum.
{"title":"Atomic-Step-Networks For Nanopatterning On Si Surfaces","authors":"T. Ogino, Y. Homma, H. Hibino, Y. Kunii, H. Omi","doi":"10.1109/IMNC.1998.730089","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730089","url":null,"abstract":"Nonlithographic methods of nanofabrication and nanopatterning will be needed for integration of future devices that will be based on new concepts such as quantum effects and single electron charging effects. In nonlithographic techniques, nanostructures are fabricated by self-organization processes. In order to apply these techniques to integrated devices, a template is needed for the nanostructure formation. Because crystal growth and chemical reactions are often initiated at atomic steps, they are the basic surface structure that can be used for a template. One example is quantum-dots grown at the steps during the Stranski-Krastanow growth mode. If the atomic step arrangement on the initial surface can be artificially designed, a quantum dot network can be organized in an orderly manner. Therefore, step arrangement control is one of the key technologies in non lit hog rap hic patterning. Step arrangement on S i ( l l 1 ) surfaces in equilibrium state is determined by the misorientation direction of the substrate and its angle: various types of step arrangement can be obtained.',') For application to integrated devices, the steps must be controlled on a wafer scale. For this purpose, we have developed step rearrangement techniques in which the step motion is controlled by etched patterns fabricated by the conventional lithography and e t~h ing .~ .~) This technique can provide us with atomic-step networks for the templates of self-organized nanostructures. The step motions to be controlled in order to fabricate step networks are divided into two categories: step retreat due to detachment of adatoms at the step edges and step advance due to the attachment. When Si surfaces are heated, the adatoms on the terraces evaporate and the shortage of the adatoms is compensated by the detachment of Si atoms at the step edges, resulting in the step retreat. When Si atoms are deposited on the surface, excess adatoms are preferentially incorporated at step edges unless the diffusion length is too short. During this process, step arrangement is modulated to form a specific att tern.^) In this talk, we will show local and wafer-scale step networks formed by step motion controls on patterned and non-patterned Si(l11) surfaces. Although an ultrahigh vacuum is often used to study the fundamental behaviors of the steps, furnace annealing is more suitable when conventional Si technology is used. We will show step networks fabricated by furnace annealing as well as by heating in ultrahigh vacuum.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121821639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729978
S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita
A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.
{"title":"Simple Method For Resist CD Prediction","authors":"S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita","doi":"10.1109/IMNC.1998.729978","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729978","url":null,"abstract":"A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133463509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730078
K. Asano, K. Takahashi, T. Nagata, M. Sato, Y. Nara
{"title":"Stitching-Error-Free Overlay Metrology For EB Lithography Using \"One-Shot\" Inspection Target Mark","authors":"K. Asano, K. Takahashi, T. Nagata, M. Sato, Y. Nara","doi":"10.1109/IMNC.1998.730078","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730078","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"71 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730097
H. Hasegawa
The so-called nanotechnology has recently made a great progress. Thus, the possibilities of constructing novel quantum electronic devices consisting artificial quantum structures such as quantum wells, wires, dots and single and multiple tunneling barriers, have become realistic. In this talk, the present status and key issues of research on the formation and device applications of compound semiconductor quantum nanostructures are presented and discussed, introducing recent results obtained by the author's group at RCIQE. Use of a UHV-based growth and processing system with suitable non-destructive characterization capabilities is a promising approach for formation of high-density arrays of defect free quantum nanostructures. An MBE based system of such a nature schematically shown in Fig. 1, which is installed at RCIQE, is described and its features are discussed. In spite of the superiority of the Si -based technology in the present and near-future ULSIs, 111-V materials seem to be more promising for high-density integration of quantum nanodevices, because, unlike Si, only 111-V materials allow formation of uniform, high density arrays of position-controlled, defect-free quantum wires and dots by combination of the EB-lithography and the selective MBE or MOVPE epitaxy on patterned or masked substrates. At RCIQE, the authors's group is engaged in formation of high density quantum wires and dots of InGaAs by selective MBE growth on pattered InP substrates. As an example, the preparation sequence and SEM and CL images of a wire-dot coupled structure for fabrication of single electron transistors (SETS) are shown in Fig.2. Status and future prospects of such a technology are discussed. Surface passivation becomes also a critical issue for quantum nanostructures. A unique Si interface control layer based structure, schematically shown in Fig.3, is being investigated at RCIQE for formation of high quality insulator-semiconductor interfaces on 111-V materials. Its formation and characterization using the UHV-based system in Fig. 1 are discussed. As for device applications, one can think of two lunds of electronic devices in the quantum regime, i.e., "quantum wave devices" and "single electron devices", since electrons manifest predominantly either wave-nature or particle-nature depending on their environments. In Japan, a multi-university national project dedicated to single electron devices ("SED" Project) is currently going (Head Investigator: H. Hasegawa, RCIQE, Period: April 1996 March 2000). Latest results of this "SED" project are briefly mentioned in the talk. At RCIQE, we were interested in both of quantum wave devices and single electron devices. To provide stronger electron confinement than that in previous split gate devices, we have proposed and tested two kinds of new Schottky gate structures which provide stronger electron confinement. They are Schottky in-plane gate (IPG) and Schottky wrap gate (WPG) structures, shown in Fig.4(a). Using
{"title":"Formation And Device Applications Of Compound Semiconductor Quantum Nanostructures","authors":"H. Hasegawa","doi":"10.1109/IMNC.1998.730097","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730097","url":null,"abstract":"The so-called nanotechnology has recently made a great progress. Thus, the possibilities of constructing novel quantum electronic devices consisting artificial quantum structures such as quantum wells, wires, dots and single and multiple tunneling barriers, have become realistic. In this talk, the present status and key issues of research on the formation and device applications of compound semiconductor quantum nanostructures are presented and discussed, introducing recent results obtained by the author's group at RCIQE. Use of a UHV-based growth and processing system with suitable non-destructive characterization capabilities is a promising approach for formation of high-density arrays of defect free quantum nanostructures. An MBE based system of such a nature schematically shown in Fig. 1, which is installed at RCIQE, is described and its features are discussed. In spite of the superiority of the Si -based technology in the present and near-future ULSIs, 111-V materials seem to be more promising for high-density integration of quantum nanodevices, because, unlike Si, only 111-V materials allow formation of uniform, high density arrays of position-controlled, defect-free quantum wires and dots by combination of the EB-lithography and the selective MBE or MOVPE epitaxy on patterned or masked substrates. At RCIQE, the authors's group is engaged in formation of high density quantum wires and dots of InGaAs by selective MBE growth on pattered InP substrates. As an example, the preparation sequence and SEM and CL images of a wire-dot coupled structure for fabrication of single electron transistors (SETS) are shown in Fig.2. Status and future prospects of such a technology are discussed. Surface passivation becomes also a critical issue for quantum nanostructures. A unique Si interface control layer based structure, schematically shown in Fig.3, is being investigated at RCIQE for formation of high quality insulator-semiconductor interfaces on 111-V materials. Its formation and characterization using the UHV-based system in Fig. 1 are discussed. As for device applications, one can think of two lunds of electronic devices in the quantum regime, i.e., \"quantum wave devices\" and \"single electron devices\", since electrons manifest predominantly either wave-nature or particle-nature depending on their environments. In Japan, a multi-university national project dedicated to single electron devices (\"SED\" Project) is currently going (Head Investigator: H. Hasegawa, RCIQE, Period: April 1996 March 2000). Latest results of this \"SED\" project are briefly mentioned in the talk. At RCIQE, we were interested in both of quantum wave devices and single electron devices. To provide stronger electron confinement than that in previous split gate devices, we have proposed and tested two kinds of new Schottky gate structures which provide stronger electron confinement. They are Schottky in-plane gate (IPG) and Schottky wrap gate (WPG) structures, shown in Fig.4(a). Using","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117199174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730060
J. W. Bae, G. Yeom, S. Lee, K. Song, J.I. Park, K. Park
I . lntroductilon Transparent conductive oxide(TC0) films have been widely employed as an optical transparent electrode in display devices and photovoltaic cells.[l,2] The development trends for TCO can be summarized into high conductivity, high transmittance, and chemical stability. From a view point of these requirements, TO(Sn02) has many possibilities. TO is an electrical conductor that has high conductivity with good transparency in the visible spectral range and excellent reflectivity in the infrared range. Also TO has the highest chemical stability. It is well known that the high conductivity of Sn02 is caused by both intrinsic defect(oxygen vacancy) and dopant(F, Sb, etc). [3,4,5] Therefore the unique method to obtain high quality transparent conductor is to cause electron degeneracy by introducing non-stoichiometry and appropriate dopants. Tin oxide has been produced by a number of techniques such as spray pyrolysis, DC(or rf)-sputtering, chemical vapor deposition(CVD), etc.[6,7,8,9] Among these techniques, organometallic CVD technique offers several advantages such as good control of film properties and relatively high growth rate on the order of 1 10 nmlsec.(lO] Tetramethyltin(TMT; (CH&Sn) is one of the volatile organotin sources and has good stability in air and moisture. [ I I ] In this study, the effects of deposition temperature and oxygen vacancies on the conductivity and optical properties of the films using oxygen containing ozone instead of pure oxygen have been investigated.
{"title":"Tin Oxide Films Deposited By Ozone Assisted Thermal CVD","authors":"J. W. Bae, G. Yeom, S. Lee, K. Song, J.I. Park, K. Park","doi":"10.1109/IMNC.1998.730060","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730060","url":null,"abstract":"I . lntroductilon Transparent conductive oxide(TC0) films have been widely employed as an optical transparent electrode in display devices and photovoltaic cells.[l,2] The development trends for TCO can be summarized into high conductivity, high transmittance, and chemical stability. From a view point of these requirements, TO(Sn02) has many possibilities. TO is an electrical conductor that has high conductivity with good transparency in the visible spectral range and excellent reflectivity in the infrared range. Also TO has the highest chemical stability. It is well known that the high conductivity of Sn02 is caused by both intrinsic defect(oxygen vacancy) and dopant(F, Sb, etc). [3,4,5] Therefore the unique method to obtain high quality transparent conductor is to cause electron degeneracy by introducing non-stoichiometry and appropriate dopants. Tin oxide has been produced by a number of techniques such as spray pyrolysis, DC(or rf)-sputtering, chemical vapor deposition(CVD), etc.[6,7,8,9] Among these techniques, organometallic CVD technique offers several advantages such as good control of film properties and relatively high growth rate on the order of 1 10 nmlsec.(lO] Tetramethyltin(TMT; (CH&Sn) is one of the volatile organotin sources and has good stability in air and moisture. [ I I ] In this study, the effects of deposition temperature and oxygen vacancies on the conductivity and optical properties of the films using oxygen containing ozone instead of pure oxygen have been investigated.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116669765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730076
M. Kotera, K. Yamaguchi
{"title":"Mechanism Of The Fluoroscopic Measurement Of Sub-Surface Structure Using High Energy Scanning Electron Microscope","authors":"M. Kotera, K. Yamaguchi","doi":"10.1109/IMNC.1998.730076","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730076","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115432043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729964
Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim
We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).
我们开发了一种基于蒙特卡罗的光学接近校正(OPC)程序，该程序可以应用于强色调或半色调相移掩模(PSM)以及二进制掩模。在之前的报告[1]中，我们提出了二进制掩码的智能OPC解决方案。研究表明，通过引入新的目标函数和优化策略，可以获得可制造的OPC掩模。在这项工作中，我们将该算法扩展到PSM。给出了该程序的详细算法和半色调PSM的OPC的几种解决方案。我们的结果的一个例子如图1所示。试验模式为简单的接触孔模式，尺寸为0.4 X 0.4 (AJNA) '。二值掩模的航拍图像如图1 (a)所示。图1 (b)为透射率为9%的半色调PSM的航拍图像。图1 (c)为半色调PSM OPC后的解决方案，显示了航拍图像质量的显著增强。图1 (d)显示了(c)解决方案的抽象，以增强掩模的可制造性。从图中可以看出，与(c)相比，航拍图像的质量略有下降。
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Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730041
M.B. Lee, K. Tsutsui, M. Ohtsu, N. Atoda
Ln conventional optical memory, the areal recording density is ultimately limited by diffraction of light since the recorded pit size depends on that of the focused laser beam spot. On the other hand, near-field optical memory currently receives a great attention as a means to increase the recording density drastically without limitation by diffraction since the pit is iiormed by a localized light on the apex of probe. The near-field optical memory of recording iknsity as high as 45 Gb/in2 was demonstrated [l], where tapered optical fiber probe with a tsubwavelength aperture on its end was employed. The near-field optical memory employing the fiber-type probe, however, lacks in high ta transmission rate, as is the case with other high-density memory based on scanning probe technique. This is mainly because it is impossible to scan the probe by a piezoelectric actuator at high enough speed while maintaining the tip-medium separation as close as order of ten nanometers. To overcome this problem, we have proposed a novel apertured probe array [2], as illustrated in Fig. 1, fabricated by Si planar process. It has concave pyramidal shaped grooves with nanometric apertures on their bottom ends. By combining the probe array with near-contact flying head technology of hard disk, e.g., we can realize high read-out rate in ultrahigh density near-field optical memory. In this paper, we describe the fabrication of the probe array by using the micromachining technique of Si. Our special concern is how to establish the fabrication method of nanometric-sized apertures with high reproducibility. The probe array was fabricated by lithography and anisotropic wet etching. As a block layer for further etching, we used the buried oxide of a silicon-on-insulator (SOI) wafer. A wafer with SO1 thickness of 9 pm was thermally oxidized to form 1.5 pm-thick S O , film. Large window regions with several square millimeters area were photolithographically defined the back side of the wafer to remove the sustaining bulk Si. The back side was anisotropically etched with a KOH aqueous solution (10wt.%, 80°C) until the etching stopped to expose the buried oxide layer. The thin upper Si layer on the front side was patterned in a 10 pm X 10 pm square array with photolithography, followed by the anisotropic etching. After the formation of the concave pyramidal grooves which are faceted with (111) planes of Si constrained by the oxide mask, the grooves slowly expand in the (111) direction. The etching was stopped at the instant the buried oxide appeared. The whole oxide was stripped away with BHF to form small apertures in the bottom of grooves, and a gold film was sputter-deposited from the front side to block the far-field light transmission. Finally, edge part of the Si bulk was removed by cutting off. Figure 2 shows the typical scanning electron micrographs (SEM) of the fabricated aperture array. The lateral aperture size of the probe array was 200 nm after 50-nm thick gold film
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