Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729929
J. Joo
{"title":"Enhancement Of Ionization In Ionized PVD By RF Pulsing And Magnetic Field","authors":"J. Joo","doi":"10.1109/IMNC.1998.729929","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729929","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125731397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729992
H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi
1. htroduction KrF excimer laser lithography will be used to manufacture 0.1 8pm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) d off-axis illumination(OAl), as a result in the line width control and the process rgin of both isolated and dense 0.18pm resist pattern, is reported .
{"title":"Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography","authors":"H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi","doi":"10.1109/IMNC.1998.729992","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729992","url":null,"abstract":"1. htroduction KrF excimer laser lithography will be used to manufacture 0.1 8pm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) d off-axis illumination(OAl), as a result in the line width control and the process rgin of both isolated and dense 0.18pm resist pattern, is reported .","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131905673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729932
H. Kumami, W. Shindo, J. Kakuta, T. Ohmi
We have experimentally shown for the first time that threshold energies of plasma-induced deactivation for phosphorus, boron and antimony in silicon epitaxy by using a low-energy ion bomibardment process [l-41. The deactivation energy of phosphorus, boron and antimony at a growing silicon film surface is -13 eV, -5 eV and -10 eV respectively as shown in Table 1. Since the deactivation energy of boron is extremely small (< 5 eV), ion bombardment energy must be precisely controlled to be lower than 5 eV in order to make the activation ratio of dopants 100 %. The experimental results of plasma-induced deactivation energy of dopants will be crucial value for plasma processing, especially for low temperature processing using ion bombardment processes. Figure 1 schematically shows an rfdc coupled mode bas sputtering system [l] used in silicon epitaxy. The kinetic energies of ions incident on the target and the substrate were independentlly determined by two external dc voltages applied to the sputtering target and the substrate, respecitiiely. Prior to the film deposition, in situ surface cleaning [1,3] under the optimized condition was carried out to remove physically adsorbed molecules onto the wafer surface during the air exposure in a clean room. The deposition rate was controlled to be 10 ndmin in this work. The sputtering target material was phosphorus (2-3x10‘’ cmS), boron ( 6 ~ 1 0 ’ ~ cmS) antimony ( 3 ~ 1 0 ’ ~ cmS) doped silicon. The crystallinity of grown silicon films was evaluated by reflective high energy electron diffraction (RHEED) analysis. The resistivrty of the in situ doped epitaxial silicon film was measured by a four-point probe method. Figure 2 shows the resistivity of a silicon film deposited using the antimony doped silicoin target as a function of the ion bombardment energy. The substrate temperature was kept at 3150’C during the deposition. Normalized ion flux which is defined as the number of bombarding argon ions per each deposited Si atom is the same in all points. In region (I), ion bombardment energy is not enough to enhance silicon film growth. Crystal structure of the grown film is polycrystal or aimorphous. Increase of resistivlty is caused by this degraded crystallinity. This situation is schemalically illustrated in Fig. 3(1). In region (II), antimony impunty was fully activated and perfect single cirystal was achieved. Kikuchi lines were observed in the RHEED photograph. It indicates that the crystallinlty of the as-deposited silicon epitaxial layer is high quality single crystal. This is also illustrated in Fig. 3(11). In region (Ill), antimony impurity was not fully activated in the as-deposited silicon epitaxial layer. However, the RHEED photograph showed Kikuchi lines. This clearly shows that antimony is unstable at growing silicon surface and easily displaced from lattice site by ion bombardment higher than -10 eV. This situation is illustrated in Fig. 3(111). In this article, deactivation energy of dopant at
{"title":"Plasma-Induced Deactivation Of P, B, Sb By Low-Energy (<30 eV) Ion Bombardment During Low-Temperature Silicon Epitaxy","authors":"H. Kumami, W. Shindo, J. Kakuta, T. Ohmi","doi":"10.1109/IMNC.1998.729932","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729932","url":null,"abstract":"We have experimentally shown for the first time that threshold energies of plasma-induced deactivation for phosphorus, boron and antimony in silicon epitaxy by using a low-energy ion bomibardment process [l-41. The deactivation energy of phosphorus, boron and antimony at a growing silicon film surface is -13 eV, -5 eV and -10 eV respectively as shown in Table 1. Since the deactivation energy of boron is extremely small (< 5 eV), ion bombardment energy must be precisely controlled to be lower than 5 eV in order to make the activation ratio of dopants 100 %. The experimental results of plasma-induced deactivation energy of dopants will be crucial value for plasma processing, especially for low temperature processing using ion bombardment processes. Figure 1 schematically shows an rfdc coupled mode bas sputtering system [l] used in silicon epitaxy. The kinetic energies of ions incident on the target and the substrate were independentlly determined by two external dc voltages applied to the sputtering target and the substrate, respecitiiely. Prior to the film deposition, in situ surface cleaning [1,3] under the optimized condition was carried out to remove physically adsorbed molecules onto the wafer surface during the air exposure in a clean room. The deposition rate was controlled to be 10 ndmin in this work. The sputtering target material was phosphorus (2-3x10‘’ cmS), boron ( 6 ~ 1 0 ’ ~ cmS) antimony ( 3 ~ 1 0 ’ ~ cmS) doped silicon. The crystallinity of grown silicon films was evaluated by reflective high energy electron diffraction (RHEED) analysis. The resistivrty of the in situ doped epitaxial silicon film was measured by a four-point probe method. Figure 2 shows the resistivity of a silicon film deposited using the antimony doped silicoin target as a function of the ion bombardment energy. The substrate temperature was kept at 3150’C during the deposition. Normalized ion flux which is defined as the number of bombarding argon ions per each deposited Si atom is the same in all points. In region (I), ion bombardment energy is not enough to enhance silicon film growth. Crystal structure of the grown film is polycrystal or aimorphous. Increase of resistivlty is caused by this degraded crystallinity. This situation is schemalically illustrated in Fig. 3(1). In region (II), antimony impunty was fully activated and perfect single cirystal was achieved. Kikuchi lines were observed in the RHEED photograph. It indicates that the crystallinlty of the as-deposited silicon epitaxial layer is high quality single crystal. This is also illustrated in Fig. 3(11). In region (Ill), antimony impurity was not fully activated in the as-deposited silicon epitaxial layer. However, the RHEED photograph showed Kikuchi lines. This clearly shows that antimony is unstable at growing silicon surface and easily displaced from lattice site by ion bombardment higher than -10 eV. This situation is illustrated in Fig. 3(111). In this article, deactivation energy of dopant at","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134642095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729980
H. Masuda
{"title":"Fabrication Of Ordered Nonohole Arrays Using Anodizing Of AL","authors":"H. Masuda","doi":"10.1109/IMNC.1998.729980","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729980","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122063912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730031
Seokyu Kim, Y. Yee, H. Kim, K. Chun
{"title":"A CMOS Compatible Capacitive Silicon Accelerometer With Polysilicon Rib-Style Flexures","authors":"Seokyu Kim, Y. Yee, H. Kim, K. Chun","doi":"10.1109/IMNC.1998.730031","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730031","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129493539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730095
T. Wada, H. Fujimoto, Y. Tomita
{"title":"Electron-Beam Doping In Damageless Regions Of Semiconductors By The Kick-Out Mechanism (Intersticialcy Mechanism)","authors":"T. Wada, H. Fujimoto, Y. Tomita","doi":"10.1109/IMNC.1998.730095","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730095","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123216754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730045
H.B. Kim, K. Chae, C. Whang, J. Yeong, M. Oh, S. Im, J. Song
The study of semiconductor nanocrystals embeded in Si02 is becoming an expanding field of interest because of their potential as optoelectronic emission devices directly coupled with Si integrated circuits. These nanocrystals emit luminescence that usually doesn't appear in the bulk materials. For fabrication technique of these nanocrystals, ion implantation is a good candidate in that it produces a controlled depth distribution of desired species and is extensively used in semiconductor technology. In this work, we present possible luminescence origins observed from Ge implanted Si02 layers. The Si02 layer with a thickness of 300 nm was grown by wet oxidation of Si(100). Ge negative ions were implanted into Si02 layer at room temperature(RT) with an energy of 100 keV. The employed dose of Geion was 5 X 10l6 ions/cm2. After implantation, the samples were annealed in nitrogen ambient for 2 hour at various temperatures. X-ray photoelectron spectroscopy(XPS) measurements were performed using a standard A1 K a (1486.7 eV) excitation source in an electron spectrometer ESCA 5700(PHI Ldt.) at a residual gas pressure of 2 X lo-'' torr. The photoemitted electrons were detected by hemispherical analyzer with a pass energy of 23.5 eV. Photoluminescence spectra were obtained at RT in a conventional way. An Ar-ion laser (457.9 nm) was used as an excitation source and the luminescence was detected by a cooled photomultiplier tube employing the photon counting technique. Figure 1 shows the PL spectra of an as-implanted sample and samples annealed for 2 hours at 900, 1000, and 1100 "C . After annealing at 900 "C in nitrogen ambient for 2 hours, the PL peak around 2.0 eV observed from as implanted sample disappeares. It implies that the luminescence from the as-implanted sample is related to some radiative defects formed by Ge implantation. However, after annealing at temperature higher than 900 C , the luminescence with the same peak position as that of the as-implanted sample shows up again, and its intensity increases with temperature. Hence, the PL from the annealed sample should be regarded as a luminescence emitted from the Ge nanocrystal. Similar results of luminescence from Ge nanocrystals were reported by others.[ 1,2] In order to confirm the origin of PL, we carried out XPS analysis for both asimplanted sample and the other samples annealed at 1 100 "C . In the case of the asimplanted sample, Ge-0 bond appears dominant, but the annealed sample shows mainly Ge-Ge bond with small amount of Ge-0 bond near the projected range of iplanted Ge.
嵌入二氧化硅的半导体纳米晶体由于其作为光电发射器件与硅集成电路直接耦合的潜力而成为一个不断扩大的研究领域。这些纳米晶体发出的光通常不会出现在大块材料中。对于这些纳米晶体的制备技术，离子注入是一个很好的选择，因为它可以产生所需物质的深度分布，并广泛应用于半导体技术。在这项工作中，我们提出了从锗注入的二氧化硅层中观察到的可能的发光来源。采用湿式氧化法制备了厚度为300 nm的sio2层。在室温(RT)下，以100 keV的能量将Ge负离子注入到sio2层中。Geion的使用剂量为5 × 106离子/cm2。注入后，在不同温度的氮气环境中退火2小时。X射线光电子能谱(XPS)测量使用ESCA 5700(PHI Ldt.)电子能谱仪的标准A1 K a (1486.7 eV)激发源，残余气体压力为2 × 10 " torr。用半球形分析仪检测光电子，通过能量为23.5 eV。用常规方法在RT下获得光致发光光谱。采用457.9 nm氩离子激光器作为激发源，利用光子计数技术在冷却的光电倍增管上检测发光。图1显示了注入样品和样品在900、1000和1100”C下退火2小时的PL光谱。在氮气环境中900℃退火2小时后，从注入样品中观察到的2.0 eV左右的PL峰消失。这说明注入样品的发光与注入锗后形成的辐射缺陷有关。而在900℃以上退火后，再次出现与注入样品相同峰位的发光，且发光强度随温度升高而增加。因此，从退火样品的PL应被视为从锗纳米晶体发出的发光。其他人也报道了类似的发光结果。[1,2]为了确认PL的来源，我们对植入样品和在1100℃退火的其他样品进行了XPS分析。未注入样品以Ge-0键为主，退火样品以Ge-0键为主，在注入Ge投影范围附近有少量Ge-0键。
{"title":"The origin of photoluminescence In Ge - implanted SiO/sub 2/ layer","authors":"H.B. Kim, K. Chae, C. Whang, J. Yeong, M. Oh, S. Im, J. Song","doi":"10.1109/IMNC.1998.730045","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730045","url":null,"abstract":"The study of semiconductor nanocrystals embeded in Si02 is becoming an expanding field of interest because of their potential as optoelectronic emission devices directly coupled with Si integrated circuits. These nanocrystals emit luminescence that usually doesn't appear in the bulk materials. For fabrication technique of these nanocrystals, ion implantation is a good candidate in that it produces a controlled depth distribution of desired species and is extensively used in semiconductor technology. In this work, we present possible luminescence origins observed from Ge implanted Si02 layers. The Si02 layer with a thickness of 300 nm was grown by wet oxidation of Si(100). Ge negative ions were implanted into Si02 layer at room temperature(RT) with an energy of 100 keV. The employed dose of Geion was 5 X 10l6 ions/cm2. After implantation, the samples were annealed in nitrogen ambient for 2 hour at various temperatures. X-ray photoelectron spectroscopy(XPS) measurements were performed using a standard A1 K a (1486.7 eV) excitation source in an electron spectrometer ESCA 5700(PHI Ldt.) at a residual gas pressure of 2 X lo-'' torr. The photoemitted electrons were detected by hemispherical analyzer with a pass energy of 23.5 eV. Photoluminescence spectra were obtained at RT in a conventional way. An Ar-ion laser (457.9 nm) was used as an excitation source and the luminescence was detected by a cooled photomultiplier tube employing the photon counting technique. Figure 1 shows the PL spectra of an as-implanted sample and samples annealed for 2 hours at 900, 1000, and 1100 \"C . After annealing at 900 \"C in nitrogen ambient for 2 hours, the PL peak around 2.0 eV observed from as implanted sample disappeares. It implies that the luminescence from the as-implanted sample is related to some radiative defects formed by Ge implantation. However, after annealing at temperature higher than 900 C , the luminescence with the same peak position as that of the as-implanted sample shows up again, and its intensity increases with temperature. Hence, the PL from the annealed sample should be regarded as a luminescence emitted from the Ge nanocrystal. Similar results of luminescence from Ge nanocrystals were reported by others.[ 1,2] In order to confirm the origin of PL, we carried out XPS analysis for both asimplanted sample and the other samples annealed at 1 100 \"C . In the case of the asimplanted sample, Ge-0 bond appears dominant, but the annealed sample shows mainly Ge-Ge bond with small amount of Ge-0 bond near the projected range of iplanted Ge.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127199755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729910
K. Rieder, G. Meyer, L. Bartels
One possible future way to create new materials and devices consists in the atom by atom assembling of functional structures on solid substrates. The instrument with which manipulations on atomic scale became possible is the scanning tunneling microscope [ I , 21. The two basic modes of the transport of atoms or molecules to form proper patterns consist of picking up the particles with the tip and releasing them back to the surface at the desired places (vertical manipulation) or to move them along the surface maintaining contact to the substrate (lateral manipulation). For a secure control of both transfer modes the basic physical steps, involved in both manipulation modes have to be known.
{"title":"Atom Manipulation With The STM: Nanostructuring And Femtochemistry","authors":"K. Rieder, G. Meyer, L. Bartels","doi":"10.1109/IMNC.1998.729910","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729910","url":null,"abstract":"One possible future way to create new materials and devices consists in the atom by atom assembling of functional structures on solid substrates. The instrument with which manipulations on atomic scale became possible is the scanning tunneling microscope [ I , 21. The two basic modes of the transport of atoms or molecules to form proper patterns consist of picking up the particles with the tip and releasing them back to the surface at the desired places (vertical manipulation) or to move them along the surface maintaining contact to the substrate (lateral manipulation). For a secure control of both transfer modes the basic physical steps, involved in both manipulation modes have to be known.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127757356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729985
Eun-Chul Park, Jun‐Bo Yoon, E. Yoon
ts an integrated LC resonator structure fabricated by using bulk micromachining and anodic Igies. In this resonator structure, pressure change is monitored by a capacitive pressure sensor le change of resonance frequency. The resonance frequency shift is detected by inductive n external transmission coil; therefore, pressure can be wirelessly monitored from passive LC s been reported that intraocular pressure can be measured by passive LC resonator structure the previous structures are bulky and manually assembled in hybrid package. This is the first integrated LC resonator sensor which is hermetically sealed in a micromachined structure.
{"title":"A Hermetically-Sealed LC Resonator For Remote Pressure Monitoring","authors":"Eun-Chul Park, Jun‐Bo Yoon, E. Yoon","doi":"10.1109/IMNC.1998.729985","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729985","url":null,"abstract":"ts an integrated LC resonator structure fabricated by using bulk micromachining and anodic Igies. In this resonator structure, pressure change is monitored by a capacitive pressure sensor le change of resonance frequency. The resonance frequency shift is detected by inductive n external transmission coil; therefore, pressure can be wirelessly monitored from passive LC s been reported that intraocular pressure can be measured by passive LC resonator structure the previous structures are bulky and manually assembled in hybrid package. This is the first integrated LC resonator sensor which is hermetically sealed in a micromachined structure.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126641120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S.K. Jung, B. Choi, S.I. Kim, C.K. Hyun, B. Min, S. Hwang, J. Park, Y. Kim, E. Kim, S. Min
Direct transport measurement results of an InAs self-assembled quantum dot system have been reported. The differential conductance characteristics measured from the metal-semiconductor-metal diodes incorporating InAs self-assembled quantum dots show conductance peaks. The energy spectrum of the dots is obtained from the peak positions.
{"title":"Direct Transport Measurements Through An Ensemble Of Inas Self-Assembled Quantum Dots","authors":"S.K. Jung, B. Choi, S.I. Kim, C.K. Hyun, B. Min, S. Hwang, J. Park, Y. Kim, E. Kim, S. Min","doi":"10.1143/JJAP.37.7169","DOIUrl":"https://doi.org/10.1143/JJAP.37.7169","url":null,"abstract":"Direct transport measurement results of an InAs self-assembled quantum dot system have been reported. The differential conductance characteristics measured from the metal-semiconductor-metal diodes incorporating InAs self-assembled quantum dots show conductance peaks. The energy spectrum of the dots is obtained from the peak positions.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114192643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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