Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730042
J. Taniguchi, M. Komuro, H. Hiroshima, I. Miyamoto
{"title":"Fabrication Of Bulk Diamond Field Emitter Tip Using Beam Assisted Etching","authors":"J. Taniguchi, M. Komuro, H. Hiroshima, I. Miyamoto","doi":"10.1109/IMNC.1998.730042","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730042","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"115-116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130589767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730024
M. Hashimoto, T. Koreeda, N. Koshida, M. Komuro, N. Atoda
{"title":"Fabrication Of A Mosfet With Self-aligned Nanogate Electrode Based On Dual-functional MoO3WO3 Bilayer Resist","authors":"M. Hashimoto, T. Koreeda, N. Koshida, M. Komuro, N. Atoda","doi":"10.1109/IMNC.1998.730024","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730024","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123555517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730014
K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani
The self-assembled quantum dots (QDs) are very interesting from technological and physical points of view Even though much effort has been devoted to the study of the QDs, the information obtained in previous reports are still incomplete In this report, we have successfully obtained ultranarrow photoluminescence (PL) lines (560 peV) originating from single lnAs QDs The PL line width increased with increasing temperature The arsenic beam equivalent pressure was 1 4x1U5 Torr Following the growth of an AIo s5Ga0 65As/GaAs/Alo s5GaO 65As quantum well as a reference for the PL measurements on a (100) n+-GaAs substrate at a nominal substrate temperature of 600°C, lnAs QDs (1 8 ML) were grown at 530°C in Stranski-Krastanov growth mode Then, an AIo 35Ga0 65As barrier layer (50 nm) and a GaAs cap layer (20 nm) were grown at 600 ‘ C Finally, lnAs QDs (1 8 ML ) were grown at the same condition as that of the embedded QDs for the AFM observation Figure 1 shows a 500x500 nm2 AFM image of the self-assembled lnAs QDs The typical density, height, and diameter of the QDs were 1x10” cm * , 1 5-3 nm, and 20-40 nm, re sw c t iv e I y ‘Figure 2 shows a microscopic PL at 10 K excited using 514 5 nm line of Ar laser with about 2 pm diameter and detected using a Iiquid-nitrogen-cooled CCD detector The energy resolution of the measurement system was estimated to be 50-60 peV The luminescence with wide energy spectrum between 1 4 and 1 9 eV was observed The many sharp luminescence lines between 1 4 eV and 1 8 eV originate from the single lnAs QDs The peaks at 1 52, 1 63, and 1 83 eV are luminescences from the GaAs substrate, the GaAs QW, and the lnAs wetting layer, respectively In order to study the behavior of the single lnAs QDs, we focused our attention on the skirt of the luminescence at about 1 76 eV, where the density of the QDs was relatively small and each luminescence line of the QDs could be distinguished Figure 3 shows excitation power dependence of the luminescence of a single QD The luminescence line width decreased with decreasing the excitation power from 0 5 to 0 002 mW and saturated at a value of 50-60 peV This result suggests that the volume of the QDs is so small that it is necessary to excite the sample at a very small power of less than 0 01 mW in order to realize a condition of low excitation intensity. The measured minimum PL line width was not limited by the QDs but by the spectral resolution of the CCD detector Excitation power was 0 01 mW The luminescence line labeled by an arrow indicates that the luminescence originates from the same single QD The decrease in peak energy with increasing the temperature probably reflects the temperature dependence of the band gap energy It is notable that the line width increased from 65 peV to 310 peV with increasing the temperature from 10 to 70 K (-7 peVIK) even for the luminescence from a single QD with S-function-like density of electronic state This result contrasts with the reports that the PL line width
{"title":"Ultranarrow Luminescence Lines From Single InAs Quantum Dots Grown On A GaAs Substrate","authors":"K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani","doi":"10.1109/IMNC.1998.730014","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730014","url":null,"abstract":"The self-assembled quantum dots (QDs) are very interesting from technological and physical points of view Even though much effort has been devoted to the study of the QDs, the information obtained in previous reports are still incomplete In this report, we have successfully obtained ultranarrow photoluminescence (PL) lines (560 peV) originating from single lnAs QDs The PL line width increased with increasing temperature The arsenic beam equivalent pressure was 1 4x1U5 Torr Following the growth of an AIo s5Ga0 65As/GaAs/Alo s5GaO 65As quantum well as a reference for the PL measurements on a (100) n+-GaAs substrate at a nominal substrate temperature of 600°C, lnAs QDs (1 8 ML) were grown at 530°C in Stranski-Krastanov growth mode Then, an AIo 35Ga0 65As barrier layer (50 nm) and a GaAs cap layer (20 nm) were grown at 600 ‘ C Finally, lnAs QDs (1 8 ML ) were grown at the same condition as that of the embedded QDs for the AFM observation Figure 1 shows a 500x500 nm2 AFM image of the self-assembled lnAs QDs The typical density, height, and diameter of the QDs were 1x10” cm * , 1 5-3 nm, and 20-40 nm, re sw c t iv e I y ‘Figure 2 shows a microscopic PL at 10 K excited using 514 5 nm line of Ar laser with about 2 pm diameter and detected using a Iiquid-nitrogen-cooled CCD detector The energy resolution of the measurement system was estimated to be 50-60 peV The luminescence with wide energy spectrum between 1 4 and 1 9 eV was observed The many sharp luminescence lines between 1 4 eV and 1 8 eV originate from the single lnAs QDs The peaks at 1 52, 1 63, and 1 83 eV are luminescences from the GaAs substrate, the GaAs QW, and the lnAs wetting layer, respectively In order to study the behavior of the single lnAs QDs, we focused our attention on the skirt of the luminescence at about 1 76 eV, where the density of the QDs was relatively small and each luminescence line of the QDs could be distinguished Figure 3 shows excitation power dependence of the luminescence of a single QD The luminescence line width decreased with decreasing the excitation power from 0 5 to 0 002 mW and saturated at a value of 50-60 peV This result suggests that the volume of the QDs is so small that it is necessary to excite the sample at a very small power of less than 0 01 mW in order to realize a condition of low excitation intensity. The measured minimum PL line width was not limited by the QDs but by the spectral resolution of the CCD detector Excitation power was 0 01 mW The luminescence line labeled by an arrow indicates that the luminescence originates from the same single QD The decrease in peak energy with increasing the temperature probably reflects the temperature dependence of the band gap energy It is notable that the line width increased from 65 peV to 310 peV with increasing the temperature from 10 to 70 K (-7 peVIK) even for the luminescence from a single QD with S-function-like density of electronic state This result contrasts with the reports that the PL line width ","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132261456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730032
K. Higa, T. Asano
{"title":"Fabrication Of Micro-Cantilever With A Silicon Probe Prepared By Anodization","authors":"K. Higa, T. Asano","doi":"10.1109/IMNC.1998.730032","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730032","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133006336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729947
S. Magoshi, H. Niiyama, S. Sato, Y. Kato, Y. Watanabe, T. Shibata, M. Ito, A. Ando, T. Nakasugi, K. Sugihara, K. Okumura
1. Jnwoduction The electron(e)-beam / deep ultraviolet (DUV) “intra-level” mix-and-match (ILM&M) strategy proposed by several groups [ 1,2,3] is an attractive concept to increase the throughput of the ebeam direct write (EBDW), while keeping its superior resolution. Nevertheless, in order that the LM&M may play important role in production of leading edge devices in the near future, the throughput and the overlay accuracy must be improved drastically. We propose an improved ILM&M as a production viable lithography featuring a D W biased exposure and a scanning DUV stepper without h igh rde r components of the image field distortion. The proposed ILM&M has been successfully applied to development and early production of leading edge devices in our laboratory.
{"title":"Improved Electron-Beam / DUV Intra-Level Mix-and-Match As A Production Viable Lithography With 100-nm Resolution","authors":"S. Magoshi, H. Niiyama, S. Sato, Y. Kato, Y. Watanabe, T. Shibata, M. Ito, A. Ando, T. Nakasugi, K. Sugihara, K. Okumura","doi":"10.1109/IMNC.1998.729947","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729947","url":null,"abstract":"1. Jnwoduction The electron(e)-beam / deep ultraviolet (DUV) “intra-level” mix-and-match (ILM&M) strategy proposed by several groups [ 1,2,3] is an attractive concept to increase the throughput of the ebeam direct write (EBDW), while keeping its superior resolution. Nevertheless, in order that the LM&M may play important role in production of leading edge devices in the near future, the throughput and the overlay accuracy must be improved drastically. We propose an improved ILM&M as a production viable lithography featuring a D W biased exposure and a scanning DUV stepper without h igh rde r components of the image field distortion. The proposed ILM&M has been successfully applied to development and early production of leading edge devices in our laboratory.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131705312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730043
D. Moon, Y. Ha, Hyun Kong Kim, Sehoon Kim
IJnderstanding the radiation damage cluc to low energy ion boiiibxdnient has IXY~I i o i i c ' ( 1 1 Generally. it has been i-egardcd lor :I lorig I imc . the major issues in sputtering and etching that the energetic keV ion bombardment dcsti-oys the su~face crystalline tixtcture 111) 1 ( I anioiyhization. However, most of the radiation damage studies have been basecl on I A J Energy Electron Dilfraction (LEED). €Iowever. the LEED results are not sensitive. to ih( non-periodic local atomic structure, because the coherent lengths of the electrons lx i i ' i i l l(4 ( ( I the surface are -1 to 10nni. It has been shown that niedlum energq ion scalterinK spectroscopy (i?lEIS 1 is a powerid tool foiinvesligating atomic stiiictiu-e and comwisi l ion profiles with a couple of atomic layer depth resolution. Since the channeling and blocl~ii rg effects are mainly detei-nined by the neighboring atoms, the stiiicti1ral infomiations (~ l ) t~ i i i ivd from MEIS are local in the nature in contrast to the periodic long range ordered st i -uc~l i i i~c €rom LEED. the radiation damage formed by low enei-gk ion beam sput tei-ing. Therefore, MEIS has unique features to probe local s~-~ichual changc tlut. to
对低能离子辐射损伤的认识一般有IXY~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~I ~(1)。它一直是我最喜欢的东西。在溅射和蚀刻中，高能离子轰击会破坏表面晶状织构的主要问题。然而，大多数的辐射损伤研究都是基于能量电子衍射(LEED)。€Iowever。LEED的结果不敏感。到ih(非周期性局部原子结构)，因为电子的相干长度lx i i i i i l l(4) i表面为-1至10nni。研究表明，铌能量离子散射ink光谱(i?lEIS - 1是一个强大的工具，用于研究原子的科学和化学离子剖面，具有几个原子层深度分辨率。自引导和blocl ~二世rg效果主要由邻近的原子,detei-nined的stiiicti1ral infomiations (~ l) t ~我我我从MEIS试管是当地的自然与周期性的远程命令圣我加州大学~ l我我~ c€罗LEED。低能量gk离子束溅射形成的辐射损伤。因此，MEIS具有独特的特征来探测局部的s~- - -文化变化。来
{"title":"Totally Different Sputter Damage Profiles Of Metal And Si Single Crystal Smrfaccs Investigated By Medium Energy Ion Scattering Spectroscopy","authors":"D. Moon, Y. Ha, Hyun Kong Kim, Sehoon Kim","doi":"10.1109/IMNC.1998.730043","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730043","url":null,"abstract":"IJnderstanding the radiation damage cluc to low energy ion boiiibxdnient has IXY~I i o i i c ' ( 1 1 Generally. it has been i-egardcd lor :I lorig I imc . the major issues in sputtering and etching that the energetic keV ion bombardment dcsti-oys the su~face crystalline tixtcture 111) 1 ( I anioiyhization. However, most of the radiation damage studies have been basecl on I A J Energy Electron Dilfraction (LEED). €Iowever. the LEED results are not sensitive. to ih( non-periodic local atomic structure, because the coherent lengths of the electrons lx i i ' i i l l(4 ( ( I the surface are -1 to 10nni. It has been shown that niedlum energq ion scalterinK spectroscopy (i?lEIS 1 is a powerid tool foiinvesligating atomic stiiictiu-e and comwisi l ion profiles with a couple of atomic layer depth resolution. Since the channeling and blocl~ii rg effects are mainly detei-nined by the neighboring atoms, the stiiicti1ral infomiations (~ l ) t~ i i i ivd from MEIS are local in the nature in contrast to the periodic long range ordered st i -uc~l i i i~c €rom LEED. the radiation damage formed by low enei-gk ion beam sput tei-ing. Therefore, MEIS has unique features to probe local s~-~ichual changc tlut. to","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123311899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Oogi, T. Ishimura, T. Kamikubo, M. Shimizu, Y. Hattori, T. Iijima, H. Anze, T. Abe, T. Tojo, T. Takigawa
In order to realize a real-time proximity effect correction system, a high-speed, highly accurate hardware system for convolution calculation has been developed. The representative figure method is used in the system. Pipeline architecture and parallel processing architecture are also used. The calculation speed of the system is 500 s for a writing region of 10 ×10 cm. The optimum correction dose has been evaluated using the output data of the convolution system. The error in the correction dose caused by our system is found to be 0.5% at most. These results suggest that a real-time proximity effect correction system can be realized, which can be used for making reticles of Gbit-class dynamic ramdom access memories (DRAMs).
{"title":"High-Speed Convolution System For Real-Time Proximity Effect Correction","authors":"S. Oogi, T. Ishimura, T. Kamikubo, M. Shimizu, Y. Hattori, T. Iijima, H. Anze, T. Abe, T. Tojo, T. Takigawa","doi":"10.1143/JJAP.37.6779","DOIUrl":"https://doi.org/10.1143/JJAP.37.6779","url":null,"abstract":"In order to realize a real-time proximity effect correction system, a high-speed, highly accurate hardware system for convolution calculation has been developed. The representative figure method is used in the system. Pipeline architecture and parallel processing architecture are also used. The calculation speed of the system is 500 s for a writing region of 10 ×10 cm. The optimum correction dose has been evaluated using the output data of the convolution system. The error in the correction dose caused by our system is found to be 0.5% at most. These results suggest that a real-time proximity effect correction system can be realized, which can be used for making reticles of Gbit-class dynamic ramdom access memories (DRAMs).","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116327856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729965
Keeho Kim, S. Madhavan, J. Lilygren
1. Motivation Lithography for below 0.25 um generation strongly demands OPC(Optica1 Proximity Correction) technics to achieve the better pattem fidelity that normally improves overlay margin, CD tolerance, Device characteristics such as leakage current margin and etc. The first step to design mask layout having OPC should be simulation. Normally, the main tasks of this simulation step are of making decision the best type and dimension of OPC. However, sometimes real pattern results on wafer level exposed by the mask that is designed with based on simulation, are different from designer’s expectation. This phenomenon is explicitly getting worse and worse due to the increasing of mask error when going to 4 x reticle and aggressive OPC patterns for below 0.25 um generation device. In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.
{"title":"OPC Methodology To Overcome Mask Error Effect On Below 0.25 um Lithography Generation","authors":"Keeho Kim, S. Madhavan, J. Lilygren","doi":"10.1109/IMNC.1998.729965","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729965","url":null,"abstract":"1. Motivation Lithography for below 0.25 um generation strongly demands OPC(Optica1 Proximity Correction) technics to achieve the better pattem fidelity that normally improves overlay margin, CD tolerance, Device characteristics such as leakage current margin and etc. The first step to design mask layout having OPC should be simulation. Normally, the main tasks of this simulation step are of making decision the best type and dimension of OPC. However, sometimes real pattern results on wafer level exposed by the mask that is designed with based on simulation, are different from designer’s expectation. This phenomenon is explicitly getting worse and worse due to the increasing of mask error when going to 4 x reticle and aggressive OPC patterns for below 0.25 um generation device. In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"633 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116479082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730033
M. Jung, D. Kim, S.S. Choi, O.J. Kang, Y. Suh, Y. Kuk
There have been great interests in developing micromachined cantilever stylus, scanning probe based chemical sensor, including thermal probe Sensor and nano-resolution mass and molecule detectors. The microfabricated cantilevers offer various possibilities as chemical sensors such as nanocalorimeters on high resolution mass detectors based on resonance frequency shift. The microcantilever coated with a thin metal layer was recently reported as a high sensitive thermal Sensor when heat was generated by reaction of hydrogen and oxygen on the cantilever in vacuum. Nanoscale mass measurement was reported in particulate mass deposited on microcantilevers using resonance frequency shifl techniques. Bing et al. also proposed a micro cantilever sensor with MHz resonance frequency and a mass resolution of IO-'* g. More recently, vapor adsorption on the micro cantilever surface was also found to create a shift of resonance frequency and angular bending of the bimetallic cantilevefll,2,3,4,5]. In this work, we fabricated a Si3N4 cantilever using micromachining techniques. Initially a Si,N, layer was deposited using low pressure chemical vapor deposition techniques. The cantilever was defined and patterned by photolithography on the front side and etched into the silicon. Finally, the backside etching was performed until both etch fronts meet and the cantilever becomes released. -100nm AJ and 20nm Pt thin film layers were deposited on the backside of the fabricated S13N, cantilever using electron beam evaporator. The temperature change and heat flow across the fabricated bimetallic lever would create angular bending of the bimetallic cantilever. The heat was supplied through a stainless steel block attached to a cantilever-supporting beam. The block was wrapped with a nichrome wire in order to supply heat to the lever. The thenal couple was also attached to the stainless steel block. The hysteris curve of the lever upon heating and cooling was measured without a chemical substance. The chemical substance, tetra decand CH3(CH2),,0H, was used and its theoretical temperature for phase change from solid phase to liquid phase is known to be -31 3K. Very tiny amounts of tetra decanol were placed on top of the bimetallic lever and its thermal response was examined during an endothermic chemical reaction using optical deflection method. The abrupt change of the angular bending of the bimetallic lever due to endothermic chemical reactions was observed at -315K. This introductory experiment presents bimetallic cantilevers as excellent candidates for chemical Sensor (sensitive in mass resolution) in an atmospheric environment. Depending upon chemical reaction, whether it is exothermic or endothermic, specific micro-scale or nano-scale cantilever sensors can be tailored to the specific chemical reaction of the interest.
{"title":"Fabrication Of Bimetallic Cantilevers For Chemical Sensors","authors":"M. Jung, D. Kim, S.S. Choi, O.J. Kang, Y. Suh, Y. Kuk","doi":"10.1109/IMNC.1998.730033","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730033","url":null,"abstract":"There have been great interests in developing micromachined cantilever stylus, scanning probe based chemical sensor, including thermal probe Sensor and nano-resolution mass and molecule detectors. The microfabricated cantilevers offer various possibilities as chemical sensors such as nanocalorimeters on high resolution mass detectors based on resonance frequency shift. The microcantilever coated with a thin metal layer was recently reported as a high sensitive thermal Sensor when heat was generated by reaction of hydrogen and oxygen on the cantilever in vacuum. Nanoscale mass measurement was reported in particulate mass deposited on microcantilevers using resonance frequency shifl techniques. Bing et al. also proposed a micro cantilever sensor with MHz resonance frequency and a mass resolution of IO-'* g. More recently, vapor adsorption on the micro cantilever surface was also found to create a shift of resonance frequency and angular bending of the bimetallic cantilevefll,2,3,4,5]. In this work, we fabricated a Si3N4 cantilever using micromachining techniques. Initially a Si,N, layer was deposited using low pressure chemical vapor deposition techniques. The cantilever was defined and patterned by photolithography on the front side and etched into the silicon. Finally, the backside etching was performed until both etch fronts meet and the cantilever becomes released. -100nm AJ and 20nm Pt thin film layers were deposited on the backside of the fabricated S13N, cantilever using electron beam evaporator. The temperature change and heat flow across the fabricated bimetallic lever would create angular bending of the bimetallic cantilever. The heat was supplied through a stainless steel block attached to a cantilever-supporting beam. The block was wrapped with a nichrome wire in order to supply heat to the lever. The thenal couple was also attached to the stainless steel block. The hysteris curve of the lever upon heating and cooling was measured without a chemical substance. The chemical substance, tetra decand CH3(CH2),,0H, was used and its theoretical temperature for phase change from solid phase to liquid phase is known to be -31 3K. Very tiny amounts of tetra decanol were placed on top of the bimetallic lever and its thermal response was examined during an endothermic chemical reaction using optical deflection method. The abrupt change of the angular bending of the bimetallic lever due to endothermic chemical reactions was observed at -315K. This introductory experiment presents bimetallic cantilevers as excellent candidates for chemical Sensor (sensitive in mass resolution) in an atmospheric environment. Depending upon chemical reaction, whether it is exothermic or endothermic, specific micro-scale or nano-scale cantilever sensors can be tailored to the specific chemical reaction of the interest.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123916343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729997
E. Toyota
design o f acoustic delay lines (ADL) is proposed t o protect beam lines especially and a wide aperture. Protection against a sudden rupture o f a beryllium window 3 concern in the design of beam lines. Because safety o f vacuum systems o f beam synchrotron radiation lithography relies on the strength o f a thin beryllium foil being atmospheric pressure. As exposure fields are being expanded with demands in industry year by year, the aperture size of ADLs has been increasing. Such aperture degrades the performance of the ADL seriously, because leakage gas from flows upstream dominantly through the openings o f the ADL. While the shorter beam as usual, the shorter ADLs degrade the perFormance as well. novel design o f the beam line by Sumitomo Heavy Industries (SHI), an oscillating the beam from the light source vertically on the exposure plane.[l] A Beryllium extracts the beam from vacuum area t o atmospheric area, is attached t o the end of As shown in Figure 1, The ADL consists of a pair o f double tube and forms the end line. The window is connected t o the outer tube of the ADL via a bellows tube flexibly. also connected t o the inner tube of the ADL firmly. The inner tube that has enough enveloping the beam flux oscillates with the motion of the scanning mirror by synchronized driving mechanism. The ADL has an enough length stretching from the upstream. A series o f partition walls, which consist of stationary and floating baffle
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