Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729947
S. Magoshi, H. Niiyama, S. Sato, Y. Kato, Y. Watanabe, T. Shibata, M. Ito, A. Ando, T. Nakasugi, K. Sugihara, K. Okumura
1. Jnwoduction The electron(e)-beam / deep ultraviolet (DUV) “intra-level” mix-and-match (ILM&M) strategy proposed by several groups [ 1,2,3] is an attractive concept to increase the throughput of the ebeam direct write (EBDW), while keeping its superior resolution. Nevertheless, in order that the LM&M may play important role in production of leading edge devices in the near future, the throughput and the overlay accuracy must be improved drastically. We propose an improved ILM&M as a production viable lithography featuring a D W biased exposure and a scanning DUV stepper without h igh rde r components of the image field distortion. The proposed ILM&M has been successfully applied to development and early production of leading edge devices in our laboratory.
{"title":"Improved Electron-Beam / DUV Intra-Level Mix-and-Match As A Production Viable Lithography With 100-nm Resolution","authors":"S. Magoshi, H. Niiyama, S. Sato, Y. Kato, Y. Watanabe, T. Shibata, M. Ito, A. Ando, T. Nakasugi, K. Sugihara, K. Okumura","doi":"10.1109/IMNC.1998.729947","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729947","url":null,"abstract":"1. Jnwoduction The electron(e)-beam / deep ultraviolet (DUV) “intra-level” mix-and-match (ILM&M) strategy proposed by several groups [ 1,2,3] is an attractive concept to increase the throughput of the ebeam direct write (EBDW), while keeping its superior resolution. Nevertheless, in order that the LM&M may play important role in production of leading edge devices in the near future, the throughput and the overlay accuracy must be improved drastically. We propose an improved ILM&M as a production viable lithography featuring a D W biased exposure and a scanning DUV stepper without h igh rde r components of the image field distortion. The proposed ILM&M has been successfully applied to development and early production of leading edge devices in our laboratory.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131705312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730042
J. Taniguchi, M. Komuro, H. Hiroshima, I. Miyamoto
{"title":"Fabrication Of Bulk Diamond Field Emitter Tip Using Beam Assisted Etching","authors":"J. Taniguchi, M. Komuro, H. Hiroshima, I. Miyamoto","doi":"10.1109/IMNC.1998.730042","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730042","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"115-116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130589767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730032
K. Higa, T. Asano
{"title":"Fabrication Of Micro-Cantilever With A Silicon Probe Prepared By Anodization","authors":"K. Higa, T. Asano","doi":"10.1109/IMNC.1998.730032","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730032","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133006336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730014
K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani
The self-assembled quantum dots (QDs) are very interesting from technological and physical points of view Even though much effort has been devoted to the study of the QDs, the information obtained in previous reports are still incomplete In this report, we have successfully obtained ultranarrow photoluminescence (PL) lines (560 peV) originating from single lnAs QDs The PL line width increased with increasing temperature The arsenic beam equivalent pressure was 1 4x1U5 Torr Following the growth of an AIo s5Ga0 65As/GaAs/Alo s5GaO 65As quantum well as a reference for the PL measurements on a (100) n+-GaAs substrate at a nominal substrate temperature of 600°C, lnAs QDs (1 8 ML) were grown at 530°C in Stranski-Krastanov growth mode Then, an AIo 35Ga0 65As barrier layer (50 nm) and a GaAs cap layer (20 nm) were grown at 600 ‘ C Finally, lnAs QDs (1 8 ML ) were grown at the same condition as that of the embedded QDs for the AFM observation Figure 1 shows a 500x500 nm2 AFM image of the self-assembled lnAs QDs The typical density, height, and diameter of the QDs were 1x10” cm * , 1 5-3 nm, and 20-40 nm, re sw c t iv e I y ‘Figure 2 shows a microscopic PL at 10 K excited using 514 5 nm line of Ar laser with about 2 pm diameter and detected using a Iiquid-nitrogen-cooled CCD detector The energy resolution of the measurement system was estimated to be 50-60 peV The luminescence with wide energy spectrum between 1 4 and 1 9 eV was observed The many sharp luminescence lines between 1 4 eV and 1 8 eV originate from the single lnAs QDs The peaks at 1 52, 1 63, and 1 83 eV are luminescences from the GaAs substrate, the GaAs QW, and the lnAs wetting layer, respectively In order to study the behavior of the single lnAs QDs, we focused our attention on the skirt of the luminescence at about 1 76 eV, where the density of the QDs was relatively small and each luminescence line of the QDs could be distinguished Figure 3 shows excitation power dependence of the luminescence of a single QD The luminescence line width decreased with decreasing the excitation power from 0 5 to 0 002 mW and saturated at a value of 50-60 peV This result suggests that the volume of the QDs is so small that it is necessary to excite the sample at a very small power of less than 0 01 mW in order to realize a condition of low excitation intensity. The measured minimum PL line width was not limited by the QDs but by the spectral resolution of the CCD detector Excitation power was 0 01 mW The luminescence line labeled by an arrow indicates that the luminescence originates from the same single QD The decrease in peak energy with increasing the temperature probably reflects the temperature dependence of the band gap energy It is notable that the line width increased from 65 peV to 310 peV with increasing the temperature from 10 to 70 K (-7 peVIK) even for the luminescence from a single QD with S-function-like density of electronic state This result contrasts with the reports that the PL line width
{"title":"Ultranarrow Luminescence Lines From Single InAs Quantum Dots Grown On A GaAs Substrate","authors":"K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani","doi":"10.1109/IMNC.1998.730014","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730014","url":null,"abstract":"The self-assembled quantum dots (QDs) are very interesting from technological and physical points of view Even though much effort has been devoted to the study of the QDs, the information obtained in previous reports are still incomplete In this report, we have successfully obtained ultranarrow photoluminescence (PL) lines (560 peV) originating from single lnAs QDs The PL line width increased with increasing temperature The arsenic beam equivalent pressure was 1 4x1U5 Torr Following the growth of an AIo s5Ga0 65As/GaAs/Alo s5GaO 65As quantum well as a reference for the PL measurements on a (100) n+-GaAs substrate at a nominal substrate temperature of 600°C, lnAs QDs (1 8 ML) were grown at 530°C in Stranski-Krastanov growth mode Then, an AIo 35Ga0 65As barrier layer (50 nm) and a GaAs cap layer (20 nm) were grown at 600 ‘ C Finally, lnAs QDs (1 8 ML ) were grown at the same condition as that of the embedded QDs for the AFM observation Figure 1 shows a 500x500 nm2 AFM image of the self-assembled lnAs QDs The typical density, height, and diameter of the QDs were 1x10” cm * , 1 5-3 nm, and 20-40 nm, re sw c t iv e I y ‘Figure 2 shows a microscopic PL at 10 K excited using 514 5 nm line of Ar laser with about 2 pm diameter and detected using a Iiquid-nitrogen-cooled CCD detector The energy resolution of the measurement system was estimated to be 50-60 peV The luminescence with wide energy spectrum between 1 4 and 1 9 eV was observed The many sharp luminescence lines between 1 4 eV and 1 8 eV originate from the single lnAs QDs The peaks at 1 52, 1 63, and 1 83 eV are luminescences from the GaAs substrate, the GaAs QW, and the lnAs wetting layer, respectively In order to study the behavior of the single lnAs QDs, we focused our attention on the skirt of the luminescence at about 1 76 eV, where the density of the QDs was relatively small and each luminescence line of the QDs could be distinguished Figure 3 shows excitation power dependence of the luminescence of a single QD The luminescence line width decreased with decreasing the excitation power from 0 5 to 0 002 mW and saturated at a value of 50-60 peV This result suggests that the volume of the QDs is so small that it is necessary to excite the sample at a very small power of less than 0 01 mW in order to realize a condition of low excitation intensity. The measured minimum PL line width was not limited by the QDs but by the spectral resolution of the CCD detector Excitation power was 0 01 mW The luminescence line labeled by an arrow indicates that the luminescence originates from the same single QD The decrease in peak energy with increasing the temperature probably reflects the temperature dependence of the band gap energy It is notable that the line width increased from 65 peV to 310 peV with increasing the temperature from 10 to 70 K (-7 peVIK) even for the luminescence from a single QD with S-function-like density of electronic state This result contrasts with the reports that the PL line width ","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132261456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729985
Eun-Chul Park, Jun‐Bo Yoon, E. Yoon
ts an integrated LC resonator structure fabricated by using bulk micromachining and anodic Igies. In this resonator structure, pressure change is monitored by a capacitive pressure sensor le change of resonance frequency. The resonance frequency shift is detected by inductive n external transmission coil; therefore, pressure can be wirelessly monitored from passive LC s been reported that intraocular pressure can be measured by passive LC resonator structure the previous structures are bulky and manually assembled in hybrid package. This is the first integrated LC resonator sensor which is hermetically sealed in a micromachined structure.
{"title":"A Hermetically-Sealed LC Resonator For Remote Pressure Monitoring","authors":"Eun-Chul Park, Jun‐Bo Yoon, E. Yoon","doi":"10.1109/IMNC.1998.729985","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729985","url":null,"abstract":"ts an integrated LC resonator structure fabricated by using bulk micromachining and anodic Igies. In this resonator structure, pressure change is monitored by a capacitive pressure sensor le change of resonance frequency. The resonance frequency shift is detected by inductive n external transmission coil; therefore, pressure can be wirelessly monitored from passive LC s been reported that intraocular pressure can be measured by passive LC resonator structure the previous structures are bulky and manually assembled in hybrid package. This is the first integrated LC resonator sensor which is hermetically sealed in a micromachined structure.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126641120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729962
Y. Oh
{"title":"Development Of Silicon Based Inertial Sensor In SAIT","authors":"Y. Oh","doi":"10.1109/IMNC.1998.729962","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729962","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114255826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730099
Geunsook Park, Sangyeon Han, Hyungcheol Shin
11. Device Fabrication The ultra-thin SO1 film was formed by thermal oxidation of SIMOX wafers. The thickness of the recessed top-silicon layer was about 41nm. The edge region was formed by reactive ion etching, Then, the gate oxide was thermally grown to a thickness of about 14nm. Poly-silicon sidewall was formed by LPCVD and RIE etchback (Fig. 2). The thickness of the remained poly-silicon at the sidewall was determined by RIE etchback time. The poly-silicon remained at the side wall was patterned by E-beam lithography to form a nano-dot (Fig. 3). The poly-silicon dot acts as the floating gate for the storage of electrons. Interpoly oxide was deposited to a thickness of about 50nm. And then poly-silicon was deposited, and control gate was pattemed optically. As shown in Figure I@), oxide on top of the channel was very thick, whereas the gate oxide on the edge was thin. So, the inversion layer is formed only at the side edge. Both devices with dot and without dot were fabricated.
{"title":"A Nano-Structure Memory With SOI Edge Channel And A Nano Dot","authors":"Geunsook Park, Sangyeon Han, Hyungcheol Shin","doi":"10.1109/IMNC.1998.730099","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730099","url":null,"abstract":"11. Device Fabrication The ultra-thin SO1 film was formed by thermal oxidation of SIMOX wafers. The thickness of the recessed top-silicon layer was about 41nm. The edge region was formed by reactive ion etching, Then, the gate oxide was thermally grown to a thickness of about 14nm. Poly-silicon sidewall was formed by LPCVD and RIE etchback (Fig. 2). The thickness of the remained poly-silicon at the sidewall was determined by RIE etchback time. The poly-silicon remained at the side wall was patterned by E-beam lithography to form a nano-dot (Fig. 3). The poly-silicon dot acts as the floating gate for the storage of electrons. Interpoly oxide was deposited to a thickness of about 50nm. And then poly-silicon was deposited, and control gate was pattemed optically. As shown in Figure I@), oxide on top of the channel was very thick, whereas the gate oxide on the edge was thin. So, the inversion layer is formed only at the side edge. Both devices with dot and without dot were fabricated.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115252995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729911
E. Aydil, D. Marra
Plasma etching of silicon dioxide using fluorocarbon gas containing discharges is an important process in integrated circuit manufacturing. Except for subtle differences, many gas mixtures that contain fluorocarbon gases such as CnFzn+2 (n>O) and CHF3 exhibit similar etching behavior.lT2 During etching with these gases, a thin steady state layer that contains fluorocarbon moieties forms on the ~urface."~ Even in presence of such a layer, thin films of silicon, silicon dioxide and silicon nitride can be etched with rates as large as several thousands of Ang~tromdmin.~.~ However, under conditions that favor fluorocarbon polymerization, such as low energy ion bombardment, a continuous layer of a fluorocarbon film can deposit on the surface and inhibit the etching of the underlying film.'-7 It has been suggested and widely adopted that the etch inhibition results when the thin steady-state fluorocarbon layer that forms during etching becomes too thick to allow the etchant and the etching products to diffuse through this layer.3'436,7 The nature of these steady-state and etch-inhibiting overlayers has been the subject of many studies and vigorous debate over the last two decades. The conditions that favor etch inhibition on various films have been discovered by trial and error. For example, it is well known that the addition of HZ to the etching gas tends to promote the formation of an etch inhibiting film whereas an increase in ion bombardment and ion flux to the surface decreases the tendency of these layers to grow. The formation of the etch inhibiting layer can also depend on the film being etched. For example, in the presence of ion bombardment, the etch-inhibiting layer forms easier on Si than on silicon dioxide and this fact has been exploited to etch silicon dioxide selectively over Si.*
{"title":"Nature Of The Silicon And Silicon Dioxide Surfaces During Plasma Etching With Fluorocarbon Containing Discharges","authors":"E. Aydil, D. Marra","doi":"10.1109/IMNC.1998.729911","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729911","url":null,"abstract":"Plasma etching of silicon dioxide using fluorocarbon gas containing discharges is an important process in integrated circuit manufacturing. Except for subtle differences, many gas mixtures that contain fluorocarbon gases such as CnFzn+2 (n>O) and CHF3 exhibit similar etching behavior.lT2 During etching with these gases, a thin steady state layer that contains fluorocarbon moieties forms on the ~urface.\"~ Even in presence of such a layer, thin films of silicon, silicon dioxide and silicon nitride can be etched with rates as large as several thousands of Ang~tromdmin.~.~ However, under conditions that favor fluorocarbon polymerization, such as low energy ion bombardment, a continuous layer of a fluorocarbon film can deposit on the surface and inhibit the etching of the underlying film.'-7 It has been suggested and widely adopted that the etch inhibition results when the thin steady-state fluorocarbon layer that forms during etching becomes too thick to allow the etchant and the etching products to diffuse through this layer.3'436,7 The nature of these steady-state and etch-inhibiting overlayers has been the subject of many studies and vigorous debate over the last two decades. The conditions that favor etch inhibition on various films have been discovered by trial and error. For example, it is well known that the addition of HZ to the etching gas tends to promote the formation of an etch inhibiting film whereas an increase in ion bombardment and ion flux to the surface decreases the tendency of these layers to grow. The formation of the etch inhibiting layer can also depend on the film being etched. For example, in the presence of ion bombardment, the etch-inhibiting layer forms easier on Si than on silicon dioxide and this fact has been exploited to etch silicon dioxide selectively over Si.*","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125273413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730030
Sangwoong Lee, Sangjun Park, D. Cho
tract :new micromachining technology using (1 1 1)-oriented silicon is developed. The technology utilizes reactive ion etching (RIE) for patterning of microstructures to be released from the substrate, followed h y KOH wet etching of bulk silicon under the patterns to release the microstructures. The advantage of technique is that the microstructures are of single crystalline silicon. Furthermore, unlike bulk ranisotropic etching that can fabricate patterns limited by crystallographic directions, this technique can pattern vertical-walled, arbitrarily-shaped patterns. The pattern depth is limited by RIE, but the recent deep RIE processes can fabricate structures from sub-pn to 500pm depth. This compares favorably with polysilicon micromachining which is generally limited to a thickness of < 10pm. The release of microstructure is accomplished by an aqueous alkaline etch, and the gap between the substrate and microstructure is precisely controlled to almost any distance by RIE. The release etch utilize the high etch selectivity of { I 1 I} planes to (100) and {I IO} planes, and therefore, large plates can be released without additional etch holes, and with smooth structure undersurface and smooth substrate support surfaces . To understand the process, consider the two equilateral triangles bounded by {I 1I} planes of (1 11)oriented silicon as shown in Figure 1. Note that the various {I 1I } planes are tilted at f 19.47' angles from the vertical as indicated. Now consider a pattern opening shown in Figure 2. The pattern is micromachined using RIE processes, and partial nitride passivation performed as shown in Figure 3. If this structure is wet etched in an aqueous alkaline etchant, the pattern is released as in Figure 4. Due to the space limitation, a detailed flow sequence is not shown. Figure 5 shows fabricated single crystalline microbridges. Figure 5 (a) shows a released bridge. The dimensions are: length 55pm, width 20pm, and thickness 4 p . The gap to the substrate is 2pm. Figure 5 (b) shows a bridge with dimensions: 260pm length, 50pm width, and ,4pm thickness. The SEM shows that 260pm x 50pm is released, but that the bridge is stuck to the substrate because of the stiction caused by wet etching. This problem can be improved by the use of sublimation or super critical drying techniques, or by simply making the gap larger. Also note that because the micromachining technology relies on RIE for shape patterning and crystallography-dependent anisotropic etching, all shapes are sharply defined and all surfaces are clear. Other shapes including comb drives can be easily fabricated using this technique. This paper developed a new micromachining technology using (1 11)-oriented silicon for the first time. The technology combines the advantages of dry RIE processes and crystallography of silicon to fabricate sharply-defined, arbitrarily-shaped, released, single-crystalline silicon microstructures. This technology offers much potential as an alternati
{"title":"A New Micromachining Technology Using","authors":"Sangwoong Lee, Sangjun Park, D. Cho","doi":"10.1109/IMNC.1998.730030","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730030","url":null,"abstract":"tract :new micromachining technology using (1 1 1)-oriented silicon is developed. The technology utilizes reactive ion etching (RIE) for patterning of microstructures to be released from the substrate, followed h y KOH wet etching of bulk silicon under the patterns to release the microstructures. The advantage of technique is that the microstructures are of single crystalline silicon. Furthermore, unlike bulk ranisotropic etching that can fabricate patterns limited by crystallographic directions, this technique can pattern vertical-walled, arbitrarily-shaped patterns. The pattern depth is limited by RIE, but the recent deep RIE processes can fabricate structures from sub-pn to 500pm depth. This compares favorably with polysilicon micromachining which is generally limited to a thickness of < 10pm. The release of microstructure is accomplished by an aqueous alkaline etch, and the gap between the substrate and microstructure is precisely controlled to almost any distance by RIE. The release etch utilize the high etch selectivity of { I 1 I} planes to (100) and {I IO} planes, and therefore, large plates can be released without additional etch holes, and with smooth structure undersurface and smooth substrate support surfaces . To understand the process, consider the two equilateral triangles bounded by {I 1I} planes of (1 11)oriented silicon as shown in Figure 1. Note that the various {I 1I } planes are tilted at f 19.47' angles from the vertical as indicated. Now consider a pattern opening shown in Figure 2. The pattern is micromachined using RIE processes, and partial nitride passivation performed as shown in Figure 3. If this structure is wet etched in an aqueous alkaline etchant, the pattern is released as in Figure 4. Due to the space limitation, a detailed flow sequence is not shown. Figure 5 shows fabricated single crystalline microbridges. Figure 5 (a) shows a released bridge. The dimensions are: length 55pm, width 20pm, and thickness 4 p . The gap to the substrate is 2pm. Figure 5 (b) shows a bridge with dimensions: 260pm length, 50pm width, and ,4pm thickness. The SEM shows that 260pm x 50pm is released, but that the bridge is stuck to the substrate because of the stiction caused by wet etching. This problem can be improved by the use of sublimation or super critical drying techniques, or by simply making the gap larger. Also note that because the micromachining technology relies on RIE for shape patterning and crystallography-dependent anisotropic etching, all shapes are sharply defined and all surfaces are clear. Other shapes including comb drives can be easily fabricated using this technique. This paper developed a new micromachining technology using (1 11)-oriented silicon for the first time. The technology combines the advantages of dry RIE processes and crystallography of silicon to fabricate sharply-defined, arbitrarily-shaped, released, single-crystalline silicon microstructures. This technology offers much potential as an alternati","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125192347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729996
S. Nakao, J. Miyazaki, K. Tsujita, W. Wakamiya
{"title":"Measuring Odd Component Of Aberration Function Utilizing Alternating PSM","authors":"S. Nakao, J. Miyazaki, K. Tsujita, W. Wakamiya","doi":"10.1109/IMNC.1998.729996","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729996","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116648176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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