Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.351972
J. Chaichanawong, K. Sato, H. Abe, K. Murata, T. Fukui, T. Charinpanitkul, W. Tanthapanichakoon, M. Naito
La0.8Sr0.3MnO3(LSM)/Y2O3 stabilized ZrO2(YSZ) composite powders were mechanically prepared. By changing the mechanical device or processing time, three composite powders with different size distributions were obtained. Then the powders were formed into cathodes of solid oxide fuel cells (SOFCs). The microstructures of the cathodes were carefully characterized by scanning electron microscope (SEM). Losses by internal resistance (IR) and by polarization between the electrolyte and cathode were measured with the current interruption technique. The cathode fabricated by using the powder with the narrowest particle size distribution showed fine grains, uniform porous structure and good contact with the electrolyte layer, thereby resulting in low IR and polarization losses. In contrast, the cathode fabricated from the powder with the broadest particle size distribution contained a large mass of coarse particles and had less uniform structure in the grains and pores, thereby resulting in relatively high IR and polarization losses.
{"title":"Microstructural Control of LSM/YSZ Composite Cathode for Lower Temperature Operation of SOFC","authors":"J. Chaichanawong, K. Sato, H. Abe, K. Murata, T. Fukui, T. Charinpanitkul, W. Tanthapanichakoon, M. Naito","doi":"10.1109/NEMS.2007.351972","DOIUrl":"https://doi.org/10.1109/NEMS.2007.351972","url":null,"abstract":"La0.8Sr0.3MnO3(LSM)/Y2O3 stabilized ZrO2(YSZ) composite powders were mechanically prepared. By changing the mechanical device or processing time, three composite powders with different size distributions were obtained. Then the powders were formed into cathodes of solid oxide fuel cells (SOFCs). The microstructures of the cathodes were carefully characterized by scanning electron microscope (SEM). Losses by internal resistance (IR) and by polarization between the electrolyte and cathode were measured with the current interruption technique. The cathode fabricated by using the powder with the narrowest particle size distribution showed fine grains, uniform porous structure and good contact with the electrolyte layer, thereby resulting in low IR and polarization losses. In contrast, the cathode fabricated from the powder with the broadest particle size distribution contained a large mass of coarse particles and had less uniform structure in the grains and pores, thereby resulting in relatively high IR and polarization losses.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127804657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352065
Y. Lee, Ming-Hung Chung, Jun-Yi Ruan, F. Hsiao
This paper presents a comprehensive theoretical modeling for the laser assisted direct imprinting (LADI) process, which utilizes a quartz mold, pulsed laser heating, and contact pressure for direct nano-patterning and nanostructure fabrication on silicon substrates. The purpose of this work is to reveal the underlying mechanism behind LADI and to quantitatively characterize important imprinting parameters which dominate a successful LADI process. The theoretical modeling consists of three elements, the time-history of silicon melting when subjected to pulsed laser heating, the elastodynamic movement of mold's surface under resistance pressure, and the squeezing out of the molten silicon layer under the pressure from the walls. We have accurately determined the governing equations for each physical problem and derive the interaction relationship between them. A numerical scheme is developed to modeling the whole LADI process. The role of each important factor such as laser fluence, contact pressure, viscosity of molten substance and mold's feature size can be understood and visualized through this model and their influences on the final imprinting depth are also quantitatively determined.
{"title":"A Theoretical Model for Laser Assisted Direct Imprinting (LADI)","authors":"Y. Lee, Ming-Hung Chung, Jun-Yi Ruan, F. Hsiao","doi":"10.1109/NEMS.2007.352065","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352065","url":null,"abstract":"This paper presents a comprehensive theoretical modeling for the laser assisted direct imprinting (LADI) process, which utilizes a quartz mold, pulsed laser heating, and contact pressure for direct nano-patterning and nanostructure fabrication on silicon substrates. The purpose of this work is to reveal the underlying mechanism behind LADI and to quantitatively characterize important imprinting parameters which dominate a successful LADI process. The theoretical modeling consists of three elements, the time-history of silicon melting when subjected to pulsed laser heating, the elastodynamic movement of mold's surface under resistance pressure, and the squeezing out of the molten silicon layer under the pressure from the walls. We have accurately determined the governing equations for each physical problem and derive the interaction relationship between them. A numerical scheme is developed to modeling the whole LADI process. The role of each important factor such as laser fluence, contact pressure, viscosity of molten substance and mold's feature size can be understood and visualized through this model and their influences on the final imprinting depth are also quantitatively determined.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127839537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352231
G. Rao, S. Ananda kumar, K. Rao, B. Parvatheeswara Rao, A. Gupta, O. Caltun, I. Dumitru, Cheolgi Kim
The development of new magnetoelastic materials, suitable for use in magnetic stress sensors, has a high scientific and technological interest due to growing number of possible applications in automotive industry. In this study, a series of silicon-doped cobalt ferrite samples with compositions of CoSixFe2-xO4 were prepared by substituting silicon for iron. The samples were made using standard powder ceramic technique. The spinel structure and the presence of residual phases were checked by XRD analysis. To determine the influence of the substitution on the strength of the magnetic exchange interactions, Curie temperature (Tc) measurements were made. A dramatic decrease of Tc with the substitution of Si for Fe was observed. By adjusting the silicon content and the sintering process the material properties could be optimized for industrial application.
{"title":"Doped Cobalt Ferrites for Stress Sensor Applications","authors":"G. Rao, S. Ananda kumar, K. Rao, B. Parvatheeswara Rao, A. Gupta, O. Caltun, I. Dumitru, Cheolgi Kim","doi":"10.1109/NEMS.2007.352231","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352231","url":null,"abstract":"The development of new magnetoelastic materials, suitable for use in magnetic stress sensors, has a high scientific and technological interest due to growing number of possible applications in automotive industry. In this study, a series of silicon-doped cobalt ferrite samples with compositions of CoSixFe2-xO4 were prepared by substituting silicon for iron. The samples were made using standard powder ceramic technique. The spinel structure and the presence of residual phases were checked by XRD analysis. To determine the influence of the substitution on the strength of the magnetic exchange interactions, Curie temperature (Tc) measurements were made. A dramatic decrease of Tc with the substitution of Si for Fe was observed. By adjusting the silicon content and the sintering process the material properties could be optimized for industrial application.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133763281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352002
W. Ko
The application of "Implant Micro/Nano systems" in life sciences and Medical Engineering may have diagnostic monitoring, therapeutic treatment, and two way control functions. This paper will summarize the implant system research and applications since the early period (1960-1980). Selected examples will be used to explain the implant system concepts and demonstrative results of implant telemetry systems. With the advances of Micro/Nano technologies in MEMS/NEMS, the bright outlook and direction of advances in future implant systems will be suggested. The special requirements, design considerations and the bottleneck problems of implant systems, as well as possible solutions to these problems will be discussed. Suggestions are made on research topics required in theory, technology, device design and system applications to realize the potential contributions of implant system to life sciences and medical care.
{"title":"Special Invited Lecture: Implant Micro/Nano Systems for Bio-Medical Applications","authors":"W. Ko","doi":"10.1109/NEMS.2007.352002","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352002","url":null,"abstract":"The application of \"Implant Micro/Nano systems\" in life sciences and Medical Engineering may have diagnostic monitoring, therapeutic treatment, and two way control functions. This paper will summarize the implant system research and applications since the early period (1960-1980). Selected examples will be used to explain the implant system concepts and demonstrative results of implant telemetry systems. With the advances of Micro/Nano technologies in MEMS/NEMS, the bright outlook and direction of advances in future implant systems will be suggested. The special requirements, design considerations and the bottleneck problems of implant systems, as well as possible solutions to these problems will be discussed. Suggestions are made on research topics required in theory, technology, device design and system applications to realize the potential contributions of implant system to life sciences and medical care.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133812342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.351973
Kyu-Jin Kim, Byoung-Ho Kang, Do-Eok Kim, W. Kang, Jae-Ho Kim, D. Kwon, Jung-Hee Lee, Shin-Won Kang
The authors had manufactured the Au nanorod by electrochemical deposition (ECD) method. ECD method has many advantages that it can make the nanorod using the various materials having the dipole and it can make the hetero structure of nanorod. The nanorods have a good round shape with 7 mum height and 200 nm thick. To measure the characteristics of the nanorod, measurement electrode pattern is fabricated on the oxide layer. Electrode pattern was suggested to catch many nanorods randomly and materials of the pattern were used by the gold and titanium considering the work function of the nanorods. Basically, I-V characteristic of the Au was measured in the state of ohmic contact. The resistance of the Au nanorod was about 280 Omega and I-V curve was not measured over the 0.54 V. Confirming the optical microscope, Au nanorod was broken by the specific factor such as heating or excessive current.
{"title":"I-V Characteristic of the Au Nanorod According to the Contact Materials","authors":"Kyu-Jin Kim, Byoung-Ho Kang, Do-Eok Kim, W. Kang, Jae-Ho Kim, D. Kwon, Jung-Hee Lee, Shin-Won Kang","doi":"10.1109/NEMS.2007.351973","DOIUrl":"https://doi.org/10.1109/NEMS.2007.351973","url":null,"abstract":"The authors had manufactured the Au nanorod by electrochemical deposition (ECD) method. ECD method has many advantages that it can make the nanorod using the various materials having the dipole and it can make the hetero structure of nanorod. The nanorods have a good round shape with 7 mum height and 200 nm thick. To measure the characteristics of the nanorod, measurement electrode pattern is fabricated on the oxide layer. Electrode pattern was suggested to catch many nanorods randomly and materials of the pattern were used by the gold and titanium considering the work function of the nanorods. Basically, I-V characteristic of the Au was measured in the state of ohmic contact. The resistance of the Au nanorod was about 280 Omega and I-V curve was not measured over the 0.54 V. Confirming the optical microscope, Au nanorod was broken by the specific factor such as heating or excessive current.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115665492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352090
Shih-wei Lin, G. Chang, Che-Hsin Lin
This paper presents a novel method for multi-wavelength fluorescence detection for high-throughput analysis of bio-samples in a micro-CE chip. In general, fluorescent dye can be excited with light sources in a specific wavelengths then the excited fluorescence emits light with longer wavelengths such that a special filter set on a fluorescence microscope is required for this application. Instead of using conventional laser induced fluorescence scheme, this study adopts a diascopic illumination light source for fluorescence excitation and an UV-VIS-NIR spectrometer for emission signals detection. Multiple fluorescence dyes can be excited and detected simultaneously in a single CE channel with this approach. In addition, the proposed system is simple and low-cost since no sophisticated optical filter sets and laser sources are required for the detection purpose. Experimental result shows that the proposed system is feasible for parallel detecting a mixed fluorescence sample in a single run. Fluorescence dyes including Atto 610, Rhodamine B and FITC are successfully detected and identified simultaneously. The LOD (limit of detection) for detecting FITC fluorescence of the proposed system can be as low as 10-5 M(SNR=5.56) which is applicable for to general bio-analytical applications.
{"title":"Multi-Wavelength Fluorescence Detection for a High-Throughput CE System under a Spectrum Equipped Diascopic Microscope Configuration","authors":"Shih-wei Lin, G. Chang, Che-Hsin Lin","doi":"10.1109/NEMS.2007.352090","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352090","url":null,"abstract":"This paper presents a novel method for multi-wavelength fluorescence detection for high-throughput analysis of bio-samples in a micro-CE chip. In general, fluorescent dye can be excited with light sources in a specific wavelengths then the excited fluorescence emits light with longer wavelengths such that a special filter set on a fluorescence microscope is required for this application. Instead of using conventional laser induced fluorescence scheme, this study adopts a diascopic illumination light source for fluorescence excitation and an UV-VIS-NIR spectrometer for emission signals detection. Multiple fluorescence dyes can be excited and detected simultaneously in a single CE channel with this approach. In addition, the proposed system is simple and low-cost since no sophisticated optical filter sets and laser sources are required for the detection purpose. Experimental result shows that the proposed system is feasible for parallel detecting a mixed fluorescence sample in a single run. Fluorescence dyes including Atto 610, Rhodamine B and FITC are successfully detected and identified simultaneously. The LOD (limit of detection) for detecting FITC fluorescence of the proposed system can be as low as 10-5 M(SNR=5.56) which is applicable for to general bio-analytical applications.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115710698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352003
Gang Chen
Thermoelectric effects enable direct energy conversion between heat and electricity. Various size effects can be explored to increase the thermoelectric performance of nanostructures compared to bulk. Boundary scattering reduces the phonon thermal conductivity, and quantum confinement and interface energy filtering can improve the electronic power factor. Theoretical and experimental results are described for thin films, nanowires, and nanocomposites.
{"title":"Special Invited Lecture: Thermoelectric Energy Conversion in Nanostructures","authors":"Gang Chen","doi":"10.1109/NEMS.2007.352003","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352003","url":null,"abstract":"Thermoelectric effects enable direct energy conversion between heat and electricity. Various size effects can be explored to increase the thermoelectric performance of nanostructures compared to bulk. Boundary scattering reduces the phonon thermal conductivity, and quantum confinement and interface energy filtering can improve the electronic power factor. Theoretical and experimental results are described for thin films, nanowires, and nanocomposites.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126193886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.351999
W. Lou, Xiu-Jun Yi, B. Qi
Microchannel device is one of the prominent applications in micro and nano technologies. Basic theory for micro fluid is developing, but pressure loss in inlet and outlet of microchannel is paid little attention. Some researches show that the pressure loss in microchannel is only 10 percent, while that in inlet and outlet is up to 90 percent. So it becomes more important to analyze the pressure loss in inlet and outlet. Computer simulation can be used effectively to forecast the transport properties in micro-scale, and to give some estimates to new devices before they are manufactured. In this paper some kind shape of inlet was modeled and simulated, pressure distribution data in inlet area were acquired. By simulation analysis, we reckon that the pressure loss made by flow resistance is about 13.58 percent, made by flow direction change is about 48.58 percent, and made by cross section change is almost 37.84 percent.
{"title":"The Simulation for Pressure Loss of Microchannel Heat Sinks Inlet","authors":"W. Lou, Xiu-Jun Yi, B. Qi","doi":"10.1109/NEMS.2007.351999","DOIUrl":"https://doi.org/10.1109/NEMS.2007.351999","url":null,"abstract":"Microchannel device is one of the prominent applications in micro and nano technologies. Basic theory for micro fluid is developing, but pressure loss in inlet and outlet of microchannel is paid little attention. Some researches show that the pressure loss in microchannel is only 10 percent, while that in inlet and outlet is up to 90 percent. So it becomes more important to analyze the pressure loss in inlet and outlet. Computer simulation can be used effectively to forecast the transport properties in micro-scale, and to give some estimates to new devices before they are manufactured. In this paper some kind shape of inlet was modeled and simulated, pressure distribution data in inlet area were acquired. By simulation analysis, we reckon that the pressure loss made by flow resistance is about 13.58 percent, made by flow direction change is about 48.58 percent, and made by cross section change is almost 37.84 percent.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128349617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.351992
Gerhard Klimeck
http://nanoHUB.org is a free online simulation facility that enables researchers and educators to access to online simulations for nano-(electronics, electromechanics, bio) applications. Most of our applications are devoted to nanoelectronics right now reaching from semiconductor device models to nanowire simulations. The online simulation facility has been operational for over ten years now and has served traditionally around 1,000 simulation users annually. The simulation tool delivery and the simulation tools have been completely overhauled in the past 18 months and over 4,200 users have run over 138,000 simulations. The introduction of interactive lectures on nanotechnology, in the form of tutorials, research seminars, and classes in the year 2004 has propelled the nanoHUB user base to over 18,700. The simulation tools available on the nanoHUB can address issues in quantum dots, resonant tunneling diodes, carbon nanotubes, PN-junctions, MOS capacitors, MOSFETs, nanowires, ultra-thin-body MOSFETs, and others. This short-course will overview usage scenarios from the perspectives of an undergraduate student, a post-doctoral researcher, and a faculty member, for education, research, and teaching, respectively.
{"title":"NanoHUB.org Tutorial: Education Simulation Tools","authors":"Gerhard Klimeck","doi":"10.1109/NEMS.2007.351992","DOIUrl":"https://doi.org/10.1109/NEMS.2007.351992","url":null,"abstract":"http://nanoHUB.org is a free online simulation facility that enables researchers and educators to access to online simulations for nano-(electronics, electromechanics, bio) applications. Most of our applications are devoted to nanoelectronics right now reaching from semiconductor device models to nanowire simulations. The online simulation facility has been operational for over ten years now and has served traditionally around 1,000 simulation users annually. The simulation tool delivery and the simulation tools have been completely overhauled in the past 18 months and over 4,200 users have run over 138,000 simulations. The introduction of interactive lectures on nanotechnology, in the form of tutorials, research seminars, and classes in the year 2004 has propelled the nanoHUB user base to over 18,700. The simulation tools available on the nanoHUB can address issues in quantum dots, resonant tunneling diodes, carbon nanotubes, PN-junctions, MOS capacitors, MOSFETs, nanowires, ultra-thin-body MOSFETs, and others. This short-course will overview usage scenarios from the perspectives of an undergraduate student, a post-doctoral researcher, and a faculty member, for education, research, and teaching, respectively.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128623168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352082
H. Joyce, Y. Kim, Q. Gao, H. Tan, C. Jagadish
We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth.
{"title":"Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition","authors":"H. Joyce, Y. Kim, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/NEMS.2007.352082","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352082","url":null,"abstract":"We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129818850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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