Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352196
Jin-Woo Kim, N. Kotagiri, R. Deaton, S. Tung
Molecular wire construction using DNA-directed self-assembly of multi-walled carbon nanotubes (MWNTs) has been attempted. MWNTs were selected owing to their exceptional electrical and structural properties. DNA, which possesses specific molecular recognition properties, served as the engine for the assembly. Non-crosshybridizing (NCH) sequences were designed to impart specificity and high throughput reaction. Stepwise manufacturing of the wire was accomplished by first functionalizing the NCH 20 base pair single-stranded sequences to the tips of MWNT using amide linkage. The adducts were then utilized to self-assemble 1D nanotube wire through DNA hybridization reactions between two complementary ssDNAs functionalized to the MWNT tips. TEM, epi-fluorescent microscopy and AFM analyses showed successful assemblies of micrometer-scale 1D MWNT-DNA wires, ranging from 2.7-20 mum. The results demonstrate great potentials of the DNA-guided self-assembly process, which would provide an uncomplicated, versatile and inexpensive way to manufacture micrometer-scale molecular wires.
{"title":"DNA-Directed Self-Assembly of Microscopic 1-D Carbon Nanotube Wire","authors":"Jin-Woo Kim, N. Kotagiri, R. Deaton, S. Tung","doi":"10.1109/NEMS.2007.352196","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352196","url":null,"abstract":"Molecular wire construction using DNA-directed self-assembly of multi-walled carbon nanotubes (MWNTs) has been attempted. MWNTs were selected owing to their exceptional electrical and structural properties. DNA, which possesses specific molecular recognition properties, served as the engine for the assembly. Non-crosshybridizing (NCH) sequences were designed to impart specificity and high throughput reaction. Stepwise manufacturing of the wire was accomplished by first functionalizing the NCH 20 base pair single-stranded sequences to the tips of MWNT using amide linkage. The adducts were then utilized to self-assemble 1D nanotube wire through DNA hybridization reactions between two complementary ssDNAs functionalized to the MWNT tips. TEM, epi-fluorescent microscopy and AFM analyses showed successful assemblies of micrometer-scale 1D MWNT-DNA wires, ranging from 2.7-20 mum. The results demonstrate great potentials of the DNA-guided self-assembly process, which would provide an uncomplicated, versatile and inexpensive way to manufacture micrometer-scale molecular wires.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128875841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352248
H. Shodja, L. Pahlevani, E. Hamed
In this paper, we develop a theory to study the nano defects of various geometries within thin films. The considered thin films have faced centered cubic (fcc) structure. The eigenstrain method is combined with the long-range Sutton-Chen (SC) inter-atomic potential function which is appropriate for fcc crystals. The disturbance caused by a defect in a thin film is determined from the equilibrium equation using the discrete Fourier transformation. The disturbed field is also determined using three dimensional (3D) molecular dynamics (MD) simulations in which the constant NVT ensemble is applied to the atomic system. For illustration, the problem of nano disk shape defect in thin film is studied by both the proposed theory and MD simulation. To compare the result of the present theory with that of continuum theory of elasticity, the problem of prismatic dislocation loop in an infinite domain is also considered.
{"title":"Elastic Field of a Nano Disk Shape Defect in an fcc Thin Film","authors":"H. Shodja, L. Pahlevani, E. Hamed","doi":"10.1109/NEMS.2007.352248","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352248","url":null,"abstract":"In this paper, we develop a theory to study the nano defects of various geometries within thin films. The considered thin films have faced centered cubic (fcc) structure. The eigenstrain method is combined with the long-range Sutton-Chen (SC) inter-atomic potential function which is appropriate for fcc crystals. The disturbance caused by a defect in a thin film is determined from the equilibrium equation using the discrete Fourier transformation. The disturbed field is also determined using three dimensional (3D) molecular dynamics (MD) simulations in which the constant NVT ensemble is applied to the atomic system. For illustration, the problem of nano disk shape defect in thin film is studied by both the proposed theory and MD simulation. To compare the result of the present theory with that of continuum theory of elasticity, the problem of prismatic dislocation loop in an infinite domain is also considered.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128834622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352100
N. Kayunkid, A. Keawprajak, A. Jaruwanawat, J. Nukeaw
The electrical and optical properties of organic-inorganic hybrid light emitting diodes (HLED) have been investigated. The HLED is consisted of organic material N,N'-di(naphthalene-l-yl)-N,N'- diphenyl-benzidine (NPB) as a hole transport layer and inorganic material zinc selenide (ZnSe) as an electron transport layer and emitting layer as well. The electrical and optical properties have been characterized by current-voltage measurement and electroluminescence (EL) spectroscopy, respectively. The current of HLED decreases with increasing ZnSe thickness, while the threshold voltage increases. The EL spectrum exhibits two peaks at 457 nm and 500 nm, due to electron-hole recombination from energy gap of ZnSe and recombination from defect states in ZnSe layer, respectively. The emission mechanism is described by electric field in organic and inorganic layers.
{"title":"Blue Emission Mechanism of NPB/ZnSe Hybrid Structure","authors":"N. Kayunkid, A. Keawprajak, A. Jaruwanawat, J. Nukeaw","doi":"10.1109/NEMS.2007.352100","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352100","url":null,"abstract":"The electrical and optical properties of organic-inorganic hybrid light emitting diodes (HLED) have been investigated. The HLED is consisted of organic material N,N'-di(naphthalene-l-yl)-N,N'- diphenyl-benzidine (NPB) as a hole transport layer and inorganic material zinc selenide (ZnSe) as an electron transport layer and emitting layer as well. The electrical and optical properties have been characterized by current-voltage measurement and electroluminescence (EL) spectroscopy, respectively. The current of HLED decreases with increasing ZnSe thickness, while the threshold voltage increases. The EL spectrum exhibits two peaks at 457 nm and 500 nm, due to electron-hole recombination from energy gap of ZnSe and recombination from defect states in ZnSe layer, respectively. The emission mechanism is described by electric field in organic and inorganic layers.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352256
V. Wiwanitkit
Hemoglobin (Hb) constant spring (CS) disorder is an important hemoglobinopathy with the highest endemicity in Southeast Asia. The role of Hb CS instability in altered red cell morphology relative to the thalassemia-like deficit of alpha globin mRNA has not been entirely resolved and needs additional structural study for clarification. Here, amino acid sequence of human alpha globin was extracted using ExPASY and used for further mutated to Hb CS disorder. The derived sequences, alpha globin chains in both normal and Hb CS disorder, were used for further investigation for secondary structures. Modeling of these proteins for secondary structure was done using the NNPREDICT server. Of interest, the secondary structure of human alpha globin chains of normal and Hb CS disorder are calculated and presented. Based on this information, the main difference between the globin chains of normal and Hb CS disorder is the elongation in the structure. Alpha globin chain of hemoglobin disorder contains more helical residues in elongated part than normal. In addition, the tertiary structure of Hb CS was also modeled using Pepstr server.
{"title":"Prediction of secondary and tertiary structures of hemoglobin Constant Spring","authors":"V. Wiwanitkit","doi":"10.1109/NEMS.2007.352256","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352256","url":null,"abstract":"Hemoglobin (Hb) constant spring (CS) disorder is an important hemoglobinopathy with the highest endemicity in Southeast Asia. The role of Hb CS instability in altered red cell morphology relative to the thalassemia-like deficit of alpha globin mRNA has not been entirely resolved and needs additional structural study for clarification. Here, amino acid sequence of human alpha globin was extracted using ExPASY and used for further mutated to Hb CS disorder. The derived sequences, alpha globin chains in both normal and Hb CS disorder, were used for further investigation for secondary structures. Modeling of these proteins for secondary structure was done using the NNPREDICT server. Of interest, the secondary structure of human alpha globin chains of normal and Hb CS disorder are calculated and presented. Based on this information, the main difference between the globin chains of normal and Hb CS disorder is the elongation in the structure. Alpha globin chain of hemoglobin disorder contains more helical residues in elongated part than normal. In addition, the tertiary structure of Hb CS was also modeled using Pepstr server.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130961732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352225
Yi Zhang, Hang Guo
In this paper, the acoustic wave propagation of single walled carbon nanotube (SWCNT) is investigated with a look into their applications in vacuum sensors at the microscale. First, the carbon nanotube in fixed-free is simulated by a continuum elastic shell modeling to analyze to the wave propagation of single walled carbon nanotubes. The sensing principle of the single-walled carbon nanotube-based vacuum sensor is based on the resonant frequency shift of a carbon nanotube acoustic bridge driven by resonant ultrasound spectroscopy (RUS) when it is subjected to sub-atmosphere force or gas pressure. The results indicate that the quality factor of the SWCNT bridge can be very high. The simulation analysis results show that the modeling approach is appropriated to describe the acoustic wave propagation of SWNT, which may be adopted as a theoretical reference for vacuum sensor design.
{"title":"Acoustic Analysis of Single-Walled Carbon Nanotube-based Vacuum Sensor","authors":"Yi Zhang, Hang Guo","doi":"10.1109/NEMS.2007.352225","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352225","url":null,"abstract":"In this paper, the acoustic wave propagation of single walled carbon nanotube (SWCNT) is investigated with a look into their applications in vacuum sensors at the microscale. First, the carbon nanotube in fixed-free is simulated by a continuum elastic shell modeling to analyze to the wave propagation of single walled carbon nanotubes. The sensing principle of the single-walled carbon nanotube-based vacuum sensor is based on the resonant frequency shift of a carbon nanotube acoustic bridge driven by resonant ultrasound spectroscopy (RUS) when it is subjected to sub-atmosphere force or gas pressure. The results indicate that the quality factor of the SWCNT bridge can be very high. The simulation analysis results show that the modeling approach is appropriated to describe the acoustic wave propagation of SWNT, which may be adopted as a theoretical reference for vacuum sensor design.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125487993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352001
C. Chung, T.S. Chen, C. Peng, B.H. Wu
In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the micro structure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like micro structure, which is also affected by the nitrogen flow ratio i.e. FN2%= FN2/( FN2+FAr) times 100% during sputtering. Amorphous-like Ta-Si-N films obtained at small FN2% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN2% of 20- 30%. The variation of Ta-Si-N micro structure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN2% while the nanohardness first increases to a maximum of 15.19 GPa from FN2% of 2% to 3%, then decreases with increasing FN2%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.
{"title":"Fabrication and Characterization of Nanostructured Ta-Si-N Films","authors":"C. Chung, T.S. Chen, C. Peng, B.H. Wu","doi":"10.1109/NEMS.2007.352001","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352001","url":null,"abstract":"In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the micro structure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like micro structure, which is also affected by the nitrogen flow ratio i.e. FN2%= FN2/( FN2+FAr) times 100% during sputtering. Amorphous-like Ta-Si-N films obtained at small FN2% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN2% of 20- 30%. The variation of Ta-Si-N micro structure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN2% while the nanohardness first increases to a maximum of 15.19 GPa from FN2% of 2% to 3%, then decreases with increasing FN2%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117091243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352247
Tiantian Zhang, L. Jia
A three-dimensional compressible model of microchannel was established. Flow and heat transfer characteristics of nitrogen flows in microchannels (hydraulic diameter is 100 mum) with designed roughness in form of obstructions placed along channels walls have been investigated numerically through a finite element CFD code consideration of the effect of compressibility and viscosity heating. The model was verified through comparing with experiment data. Then the effects of the Reynolds number, obstruction height, obstruction pitch, obstruction geometry and width to height Ratio of obstruction on the flow and heat transfer characteristics were investigated.
{"title":"Numerical Simulation of Roughness Effect on Gaseous Flow and Heat Transfer in Microchannels","authors":"Tiantian Zhang, L. Jia","doi":"10.1109/NEMS.2007.352247","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352247","url":null,"abstract":"A three-dimensional compressible model of microchannel was established. Flow and heat transfer characteristics of nitrogen flows in microchannels (hydraulic diameter is 100 mum) with designed roughness in form of obstructions placed along channels walls have been investigated numerically through a finite element CFD code consideration of the effect of compressibility and viscosity heating. The model was verified through comparing with experiment data. Then the effects of the Reynolds number, obstruction height, obstruction pitch, obstruction geometry and width to height Ratio of obstruction on the flow and heat transfer characteristics were investigated.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117061767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352039
Zumin Wang, Z. Ren, Jinghong Han, C. Bian, S. Xia
A monolithic pH sensor system has been studied and developed, based on standard CMOS technology. The micro system includes an on-chip integration of differential ISFET/REFET sensing devices, metal constructed pseudo reference electrode (PRE) and their relative signal processing circuits. We mainly present the development of PPy(polypyrrole) membrane by the way of electrochemical polymerization, which was grown on the gate of ISFET, as pH sensitive material. With a series of experiments, a high sensitivity of 56mV/pH was achieved within the pH range from 1 to 12. In the end, we discussed the influence of reagents and polymerization parameters on the pH sensor system.
{"title":"Characteristics of the PPy Material as pH Sensitive Membrane","authors":"Zumin Wang, Z. Ren, Jinghong Han, C. Bian, S. Xia","doi":"10.1109/NEMS.2007.352039","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352039","url":null,"abstract":"A monolithic pH sensor system has been studied and developed, based on standard CMOS technology. The micro system includes an on-chip integration of differential ISFET/REFET sensing devices, metal constructed pseudo reference electrode (PRE) and their relative signal processing circuits. We mainly present the development of PPy(polypyrrole) membrane by the way of electrochemical polymerization, which was grown on the gate of ISFET, as pH sensitive material. With a series of experiments, a high sensitivity of 56mV/pH was achieved within the pH range from 1 to 12. In the end, we discussed the influence of reagents and polymerization parameters on the pH sensor system.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126445373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352026
Yuh-Chung Hu, C. Wei, C. Hsiao, D.T.W. Li
This paper presents a high-precision algorithm for extracting the Young's modulus and stress gradient of thin films from the pull-in voltage measurement of a micro curled cantilever beam made of thin film materials. The algorithm considers the important issues including the fringing fields, the electromechanical coupling, and the stress-induced initial curling of the micro structures. The deviation of the extracted Young's modulus and stress gradient from the reality are below 4%. The present algorithm is very applicable to the wafer-lever testing of MEMS devices since the driving and response signals are both electric, the present algorithm could be accomplished using existing semiconductor testing equipments through probing on the bonding pads of devices.
{"title":"Extracting the Young's Modulus and Stress Gradient of Thin Films from the Pull-in Voltage of a Micro Curled Cantilever Beam","authors":"Yuh-Chung Hu, C. Wei, C. Hsiao, D.T.W. Li","doi":"10.1109/NEMS.2007.352026","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352026","url":null,"abstract":"This paper presents a high-precision algorithm for extracting the Young's modulus and stress gradient of thin films from the pull-in voltage measurement of a micro curled cantilever beam made of thin film materials. The algorithm considers the important issues including the fringing fields, the electromechanical coupling, and the stress-induced initial curling of the micro structures. The deviation of the extracted Young's modulus and stress gradient from the reality are below 4%. The present algorithm is very applicable to the wafer-lever testing of MEMS devices since the driving and response signals are both electric, the present algorithm could be accomplished using existing semiconductor testing equipments through probing on the bonding pads of devices.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127062213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-04-23DOI: 10.1109/NEMS.2007.352134
K. Koombua, R. Pidaparti, G. Tepper
A generic drug delivery system based on polymer nanotubes was design. Polymer nanotube bundles were used as drug delivery channels within a device. Because this device is very small and biocompatible, it can be implanted at any specific infectious location. The drug diffusion within the device was analyzed using the finite element method and the diffusion rate was calculated using Fick's law. The results showed the possibility of using this polymer-nanotube device as a drug delivery system that can provide a constant delivery rate and target a specific location.
{"title":"A Drug Delivery System Based on Polymer Nanotubes","authors":"K. Koombua, R. Pidaparti, G. Tepper","doi":"10.1109/NEMS.2007.352134","DOIUrl":"https://doi.org/10.1109/NEMS.2007.352134","url":null,"abstract":"A generic drug delivery system based on polymer nanotubes was design. Polymer nanotube bundles were used as drug delivery channels within a device. Because this device is very small and biocompatible, it can be implanted at any specific infectious location. The drug diffusion within the device was analyzed using the finite element method and the diffusion rate was calculated using Fick's law. The results showed the possibility of using this polymer-nanotube device as a drug delivery system that can provide a constant delivery rate and target a specific location.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127088798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}