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2006 International Symposium on Discharges and Electrical Insulation in Vacuum最新文献

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Fault Analysis in DC Electric Railways Feeding System 直流电力铁路馈电系统故障分析
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357345
R. Ikeda, E. Kaneko
Electric railways and mono-rails in Japan are operated by DC feeding systems. HSCB (high speed circuit breakers) are generally used for these electric installations. Recently, HSVCB (high speed vacuum circuit breakers) have been investigated. HSVCB makes current superimposed on fault current so that the current is forced to be zero and interrupts the current. HSVCB has an advantage such as small noise and environmental harmony. Therefore, an electric railway that adopts HSVCB has increased by the advancement of the vacuum technology in recent years. In this paper, we would like to clarity the basic performance of the HSVCB applied to the railway feeding systems
日本的电力铁路和单轨铁路由直流馈电系统运行。HSCB(高速断路器)通常用于这些电气装置。近年来,人们对高速真空断路器(HSVCB)进行了研究。高压断路器使电流叠加在故障电流上,使电流被强制为零并中断电流。hsbcb具有噪声小、环境和谐等优点。因此,近年来随着真空技术的进步,采用高压断路器的电气化铁路越来越多。在本文中,我们想要澄清应用于铁路馈电系统的HSVCB的基本性能
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引用次数: 1
Cathode Spot Movement of Low Pressure Arc Removing Oxide Layer 低压除弧氧化层阴极点运动
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357318
A. Sato, T. Iwao, M. Yumoto
Remarkable characteristic of cathode spot of low pressure arc can remove the oxide layer preferentially. Recently, cathode spot of low pressure arc have been used for cleaning metal oxide surface before the thermal spray or surface modification. However, there are few reports on the cathode spot movement or the oxide removal process. The experiment carried out by using the SS400 cathode work piece and the used cylindrical copper anode. The cathode spot movement taken by the high speed video camera is observed and analyzed by using the plasma image processing (PIP). The surfaces of work piece were covered with thick oxide of 9.67nm. The surface work piece of surface after processing was analyzed by using the laser microscope. The cathode spots movement has the difference as the processing time increases and the oxide layer roughness changes
低压电弧阴极光斑的显著特性可以优先去除氧化层。近年来,低压电弧阴极光斑在热喷涂或表面改性前被用于金属氧化物表面的清洗。然而,关于阴极斑点移动或氧化物去除过程的报道很少。实验采用SS400阴极工件和采用圆柱形铜阳极进行。采用等离子体图像处理技术对高速摄像机拍摄的阴极光斑运动进行了观察和分析。工件表面覆盖了一层厚度为9.67nm的氧化层。采用激光显微镜对表面加工后的表面工件进行了分析。阴极斑点的运动随加工时间的增加和氧化层粗糙度的变化而变化
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引用次数: 1
Use of Droplet Spots Burning for Decreasing of Droplet Fraction in Vacuum Arc Plasma 利用液滴点燃烧降低真空电弧等离子体中的液滴分数
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357310
D. I. Proskurovsky
A method of cleaning of vacuum arc plasma from droplet fraction of cathode erosion by means of arrangement of conditions for igniting and operating of "droplet spots" has been proposed. Such conditions are realized at reflective arc discharge burning. The plasma of this discharge has substantially higher temperature and concentration of particles. The experiments performed have shown that, compared to usual vacuum arc, arc of reflective discharge provides multiple decrease of number of droplets, not evaporated on their way through plasma. The experiment results have been discussed in the term of heat exchange between droplets and surrounding plasma. The proposed method opens up new opportunities for cleaning of vacuum arc plasma from droplets
提出了一种利用“液滴点”点火和操作条件的安排来清洗真空电弧等离子体阴极腐蚀液滴的方法。这种条件在反射电弧放电燃烧时实现。这种放电的等离子体具有高得多的温度和粒子浓度。实验表明,与通常的真空电弧相比,反射放电电弧使液滴数量减少了数倍,而在通过等离子体的过程中没有蒸发。从液滴与周围等离子体的热交换角度对实验结果进行了讨论。提出的方法为从液滴中清洗真空电弧等离子体开辟了新的机会
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引用次数: 1
Influence of Mechanical Finishing on Secondary Electron Emission of Alumina Ceramics 机械加工对氧化铝陶瓷二次电子发射的影响
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357240
Suharyanto, S. Michizono, Y. Saito, Tumiran, Y. Yamano, S. Kobayashi
Secondary electron emission (SEE) coefficients of alumina ceramics with three different surface finishes have been measured using a scanning electron microscope with a single-pulse electron beam (100 pA, 1 ms). SEE coefficients of those aluminas with annealing process became lower after mechanical grinding operations even though its average roughness was almost same as those of as-sintered ones. SEE coefficients of mirror-finished samples were the smallest among the samples. Changes of SEE coefficient with incident angle of primary electrons for smooth and rough surfaces are also discussed
采用单脉冲电子束(100 pA, 1 ms)扫描电子显微镜测量了三种不同表面处理的氧化铝陶瓷的二次电子发射(SEE)系数。机械磨削处理后,退火氧化铝的平均粗糙度与烧结氧化铝基本相同,但其SEE系数有所降低。镜面加工样品的SEE系数最小。讨论了光滑表面和粗糙表面的SEE系数随一次电子入射角的变化
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引用次数: 2
Maximum interrupting Capacity of CuCr Contacts under the effect of uniform axial magnetic field (AMF) 均匀轴向磁场作用下CuCr触点的最大中断容量
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357301
A. Chaly, I. N. Poluyanova, V. Poluyanov
Maximum interrupting capacity of the butt CuCr 70/30 contacts at external uniform AMF has been experimentally investigated for AMF induction range 0-1.2 T. It has been found that dependency of maximum interrupting current density versus AMF induction has a tendency to saturate when the latter achieves the level of the first characteristic point B1 on Volt-Tesla characteristic. Radial energy losses have been evaluated on the basis of measured anode mass losses. 1D thermal model has been used for evaluation maximum interrupting current density. At the same time radial energy losses have been taken into consideration. Calculated results demonstrate good agreement with the experimental data if critical temperature equal to ~2000 K is considered. This value of critical temperature is supported by several experiments described in literature
在0-1.2 t的电流感应范围内,对口CuCr 70/30触点在外部均匀电流感应下的最大中断能力进行了实验研究。结果发现,当电流感应达到伏特斯拉特性的第一个特征点B1时,最大中断电流密度与电流感应的关系趋于饱和。根据测量的阳极质量损失计算了径向能量损失。采用一维热模型对最大断流密度进行了评价。同时考虑了径向能量损失。当临界温度为~2000 K时,计算结果与实验数据吻合较好。这一临界温度值得到了文献中几个实验的支持
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引用次数: 2
Effect of chromium oxide coating on surface flashover characteristics of ceramic in vacuum 氧化铬涂层对真空陶瓷表面闪络特性的影响
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357251
T. Shioiri, N. Asari, S. Saito, H. Nakamuta, M. Homma, K. Suzuki
Experiments were conducted to determine the conditioning effects of a chromium oxide coating on a ceramic surface. Chromium oxide is known to have a small secondary electron emission coefficient. With a chromium oxide coating, conditioning effects were completed early and flash over voltage increased. While luminescence was observed on a bare ceramic surface under a high applied voltage, none was observed on the sample coated with chromium oxide. One cause of increasing flashover voltage due to coated chromium oxide is depression of the secondary electron avalanche. Another is considered to be depressed surface charge due to decreasing surface resistance
通过实验确定了氧化铬涂层在陶瓷表面的调理效果。众所周知,氧化铬的二次电子发射系数很小。氧化铬涂层后,调理效果提前完成,闪蒸过电压升高。在高施加电压下,在裸露的陶瓷表面上观察到发光,而在涂有氧化铬的样品上没有观察到发光。镀覆氧化铬导致闪络电压升高的原因之一是抑制了二次电子雪崩。另一种被认为是由于表面电阻降低而导致的表面电荷降低
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引用次数: 8
Effect of Thin Aluminum Layer on Fabricating Silicon Micro Cone Structures 薄铝层对制备硅微锥结构的影响
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357428
H. Yoshimura, H. Kanakusa, K. Nakazawa, A. Hatta
A unique technique of the fabricating sub micron sized silicon (Si) cones structure has been found. (Yoshimura, 2002) The technique consists of two processes: 1) depositing fine metal particles or layer, 2) etching in microwave plasma with negatively bias. A size distribution of unevenness on the surface of deposited aluminum (Al) layer was observed from samples after several minutes etching. A similar distribution of the cone shaped products were observed from 60 minutes etched samples also. The change of shape of the unevenness and cone shaped products under varied etching time was observed by using FE-SEM. The EDX spectrum of Al vs. Si was observed. In this paper, the relationship of distribution between the unevenness on Al layer and size of the cone products will be presented
发现了一种独特的制造亚微米尺寸硅锥结构的技术。(Yoshimura, 2002)该技术包括两个过程:1)沉积细金属颗粒或层,2)在负偏压的微波等离子体中蚀刻。经过几分钟的刻蚀后,样品的沉积铝层表面出现了不均匀的尺寸分布。从60分钟蚀刻的样品中也观察到类似的锥形产品分布。利用FE-SEM观察了不同刻蚀时间下不均匀和锥形产物的形状变化。观察了Al与Si的EDX光谱。本文给出了铝层不均匀度的分布与锥体产品尺寸之间的关系
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引用次数: 0
Clump Hypothesis and Mechanisms of Breakdown Initiation in Centimeter Vacuum Gaps 厘米级真空间隙中击穿起始的团块假说和机制
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357224
V. A. Nevrovsky
This paper discusses ways of free macroparticle generation in real conditions of vacuum electric devices and physical processes occurring at the particle interaction with an electrode. As a result, a model of vacuum breakdown initiation was suggested, including release of loosely bonded particles by electric field, their acceleration to an opposite electrode, impacts onto the electrode and formation of potentially electron emitting centers. Some published observations and data on breakdowns in centimeter gaps with long delays (tens of microseconds) indirectly indicate short-term existence of emission centers immediately prior breakdown, and thus they support the model. Mechanism of the emission center formation by plastic deformation of material in the impact zone in presence of electric field is discussed. A final stage of breakdown initiation involves emission current interaction with the anode, leading to the anode thermal instability
本文讨论了在真空电器件实际条件下自由大粒子的产生方式和粒子与电极相互作用时发生的物理过程。本文提出了真空击穿起始模型,包括松散结合粒子在电场作用下的释放、它们向相反电极的加速、对电极的冲击以及潜在电子发射中心的形成。一些已发表的观测和数据表明,在长时间延迟(几十微秒)的厘米间隙中击穿,间接表明在击穿之前立即存在短期的发射中心,因此它们支持该模型。讨论了电场作用下冲击区材料塑性变形形成发射中心的机理。击穿起始的最后阶段涉及发射电流与阳极的相互作用,导致阳极热不稳定
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引用次数: 3
Charge and velocity distribution of ions emitted from two simultaneously operating and serially connected vacuum arcs 两个同时工作并串联的真空电弧所发射离子的电荷和速度分布
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357324
G. Shafir, S. Goldsmith, E. Cheifetz
Ion velocity distribution (IVD) and ion charge state distribution (ICSD) of silver ions in a plasma beam emitted by two compact, serially connected, and simultaneously operating vacuum arcs was measured using a dynamic time of flight diagnostics. The anode and cathode of each arc were made of two strips of silver layers pasted on an alumina wafer and separated by a narrow 100 mum gap. The two arcs were laterally separated by 0.015 m and located on the same horizontal plane, emitting two plasma plums, which merged into a single one few cm away from the arcs. Each arc was ignited by high voltage breakdown on the alumina surface gap by 3mus 100 A current. The IVD of the merged plasma beam was analyzed 0.7 m away from the arcs, and compared with that of the ions emitted by a single arc. When only a single arc was active, the plasma beam consisted of more than 90 % of Ag ions with average velocity = (0.7-0.8)times104m/s and charge state z=1. About 10% of the beam ion population consisted of oxygen and carbon. When the two arcs operated simultaneously, the form of the IVD was significantly different, containing a second peak with velocity of =(1.15-1.25)times104m/s, significantly higher than that observed with a single arc. However, the integrated ion charge in the merged beam was lower by 30% from the sum of the ion charge obtained from the plasma of each arc. It was found that the observed phenomena were correlated with a formation of conducting channel between the cathode of the first serially connected arc and the anode of the second arc, occurring when the plasma plums expanding from the two arcs merged. When a physical barrier was inserted between the two arcs to prevent a contact between the two expanding plums, the observed plasma shunting did not occur, although the two beams merged in space beyond the barrier, as before. The effect on the IVD due to arc transfer from the first cathode to the second arc anode is currently being investigated.
利用动态飞行时间诊断技术测量了两个紧凑、串联、同时工作的真空电弧发射的等离子体束中银离子的离子速度分布(IVD)和离子荷态分布(ICSD)。每条电弧的阳极和阴极是由粘贴在氧化铝晶片上的两条银层制成的,中间有一个狭窄的100微米的间隙。这两个弧在横向上相距0.015 m,位于同一水平面上,发射出两个等离子体,在距离弧几厘米处合并成一个等离子体。每个电弧由氧化铝表面间隙上3mus 100 A的高压击穿点燃。在距离电弧0.7 m处分析合并等离子体束的IVD,并与单个电弧发射离子的IVD进行比较。当单弧激活时,等离子体束中银离子占90%以上,平均速度为(0.7 ~ 0.8)次104m/s,电荷态z=1。大约10%的束流离子由氧和碳组成。当两个电弧同时作用时,IVD的形态有明显的不同,包含第二个峰,其速度=(1.15-1.25)乘以104m/s,明显高于单个电弧时的速度。然而,合并光束中的综合离子电荷比从每个电弧的等离子体中获得的离子电荷之和低30%。结果表明,所观察到的现象与在第一个串联电弧的阴极和第二个串联电弧的阳极之间形成导电通道有关,这是在两个串联电弧膨胀的等离子体柱合并时发生的。当在两个电弧之间插入物理屏障以防止两个膨胀的李子之间的接触时,观察到的等离子体分流并没有发生,尽管两束光束像以前一样在屏障之外的空间合并。电弧从第一阴极转移到第二电弧阳极对IVD的影响目前正在研究中。
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引用次数: 0
Electron emission properties of plasma treated silicon ield emission arrays in gaseous ambient 等离子体处理硅场发射阵列在气体环境中的电子发射特性
Pub Date : 2006-09-01 DOI: 10.1109/DEIV.2006.357440
Y. Gotoh, T. Kojima, A. Oowada, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai
The purpose of the present study is to demonstrate the feasibility of plasma treated silicon field emission arrays used as a charge neutralization device in ion implantation system. Silicon field emission arrays (Si-FEAs) were treated in plasma to form carbonized layer. Electron emission properties of the plasma treated Si-FEAs have been measured in various gaseous ambient. The examined gases were hydrogen, oxygen, methane, carbon monoxide and carbon dioxide. Either gas was introduced to the vacuum chamber until the pressure reaches to the partial pressure in the ion implantation system
本研究的目的是证明等离子体处理的硅场发射阵列作为离子注入系统中电荷中和装置的可行性。在等离子体中处理硅场发射阵列(Si-FEAs),形成碳化层。测量了等离子体处理的硅feas在不同气体环境下的电子发射特性。检测的气体包括氢、氧、甲烷、一氧化碳和二氧化碳。任一种气体被引入真空室,直到压力达到离子注入系统中的分压
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引用次数: 1
期刊
2006 International Symposium on Discharges and Electrical Insulation in Vacuum
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