Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5385942
A. Challis, T. Ghosh, A. Tokeley, K. Rushbrook, I. Poston, A. Jacob
Increasing demands of system integrators and designers, on efficiency and increased capability, have lead to a requirement for higher RF power levels and greater operational bandwidth. This paper describes the design, theoretical modeling and experimental data collated through the development of two multi-octave mini travelling wave tubes (TWTs) during the last 12 months.
{"title":"Evolution of multi-octave helix traveling wave tubes","authors":"A. Challis, T. Ghosh, A. Tokeley, K. Rushbrook, I. Poston, A. Jacob","doi":"10.1109/COMCAS.2009.5385942","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5385942","url":null,"abstract":"Increasing demands of system integrators and designers, on efficiency and increased capability, have lead to a requirement for higher RF power levels and greater operational bandwidth. This paper describes the design, theoretical modeling and experimental data collated through the development of two multi-octave mini travelling wave tubes (TWTs) during the last 12 months.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130659432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5385997
Yaoming Sun, C. Scheytt
This paper presents a voltage controlled phase shifter in a 0.25 um SiGe BiCMOS technology for 60 GHz applications. Vector combination technique is adopted in phase shifter core. Continuous 360 degree phase tuning from 40 GHz to 70 GHz has been measured. The insertion gain of the complete test circuits is 4.6 dB and that of the phase shifter core is 7.6 dB. The phase shifter is best suited for 60 GHz phased array systems. To the authors' knowledge, this is the first phase shifter of this type for 60 GHz applications.
{"title":"A 360 degree phase shifter for 60 GHz application in SiGe BiCMOS technology","authors":"Yaoming Sun, C. Scheytt","doi":"10.1109/COMCAS.2009.5385997","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5385997","url":null,"abstract":"This paper presents a voltage controlled phase shifter in a 0.25 um SiGe BiCMOS technology for 60 GHz applications. Vector combination technique is adopted in phase shifter core. Continuous 360 degree phase tuning from 40 GHz to 70 GHz has been measured. The insertion gain of the complete test circuits is 4.6 dB and that of the phase shifter core is 7.6 dB. The phase shifter is best suited for 60 GHz phased array systems. To the authors' knowledge, this is the first phase shifter of this type for 60 GHz applications.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132117925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5385991
T. Schafer, F. Kirsch, M. Vossiek
In this paper a low-frequency local positioning system at 13.56 MHz is presented. The system is aiming at short range indoor localization problems, where a measurement through a crowd of people is required. Indoor navigation or information systems e.g. in museums, public buildings or fairs are possible applications. With a wavelength of approx. 22 m the system operates in the near field. Ranging is accomplished by measuring the phase shift between a transmitted CW base station signal and a response generated in the transponder with the use of the novel switched injection locked oscillator concept. First measurement results prove that the proposed concept allows for robust indoor ranging with an accuracy in the decimeter-range.
{"title":"A 13.56 MHz localization system utilizing a switched injection locked transponder","authors":"T. Schafer, F. Kirsch, M. Vossiek","doi":"10.1109/COMCAS.2009.5385991","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5385991","url":null,"abstract":"In this paper a low-frequency local positioning system at 13.56 MHz is presented. The system is aiming at short range indoor localization problems, where a measurement through a crowd of people is required. Indoor navigation or information systems e.g. in museums, public buildings or fairs are possible applications. With a wavelength of approx. 22 m the system operates in the near field. Ranging is accomplished by measuring the phase shift between a transmitted CW base station signal and a response generated in the transponder with the use of the novel switched injection locked oscillator concept. First measurement results prove that the proposed concept allows for robust indoor ranging with an accuracy in the decimeter-range.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132165505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5385974
F. Grassi
This paper deals with circuit and electromagnetic modeling of injection probes for Bulk Current Injection in the SPICE and CST Microwave Studio environments. Different modeling strategies are used to accurately model frequency-dependent phenomena associated with the probe ferrite core. To this end, the proposed procedure resorts to a preliminary measurement of the probe input impedance, and to Debye and Lorentian models for representing the intrinsic and effective complex permeability spectra required for electromagnetic and circuit modeling, respectively.
{"title":"Accurate modeling of ferrite-core effects in probes for Bulk Current Injection","authors":"F. Grassi","doi":"10.1109/COMCAS.2009.5385974","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5385974","url":null,"abstract":"This paper deals with circuit and electromagnetic modeling of injection probes for Bulk Current Injection in the SPICE and CST Microwave Studio environments. Different modeling strategies are used to accurately model frequency-dependent phenomena associated with the probe ferrite core. To this end, the proposed procedure resorts to a preliminary measurement of the probe input impedance, and to Debye and Lorentian models for representing the intrinsic and effective complex permeability spectra required for electromagnetic and circuit modeling, respectively.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132102521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386021
A. Katz, O. Degani, Y. Shacham-Diamand, E. Socher
A beyond 60 GHz cross-coupled NMOS differential LC CMOS VCO is presented in this paper, which is implemented in 45nm standard CMOS technology. Working with a supply voltage of 1.2 V the circuit draws a current of 38mA (72mA including output buffer) and requires a circuit area of 0.037 mm2 including the differential output buffer without pads. The circuit delivers an output power of −9dBm to −11dBm and yields a measured phase noise of −100.02dBc/Hz at 10MHz offset. The VCO offers a frequency tuning range of 0.2GHz, while statistical process variation is manifested in a 4.5GHz VCO central frequency drift for different measured samples (from 68GHz to 72.5GHz).
{"title":"A beyond 60GHz cross-coupled fundamental VCO in 45nm CMOS","authors":"A. Katz, O. Degani, Y. Shacham-Diamand, E. Socher","doi":"10.1109/COMCAS.2009.5386021","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386021","url":null,"abstract":"A beyond 60 GHz cross-coupled NMOS differential LC CMOS VCO is presented in this paper, which is implemented in 45nm standard CMOS technology. Working with a supply voltage of 1.2 V the circuit draws a current of 38mA (72mA including output buffer) and requires a circuit area of 0.037 mm2 including the differential output buffer without pads. The circuit delivers an output power of −9dBm to −11dBm and yields a measured phase noise of −100.02dBc/Hz at 10MHz offset. The VCO offers a frequency tuning range of 0.2GHz, while statistical process variation is manifested in a 4.5GHz VCO central frequency drift for different measured samples (from 68GHz to 72.5GHz).","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132521822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386036
C. Campbell, D. Dumka, M. Kao
Select considerations related to Gallium Nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in Gallium Arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.
{"title":"Design considerations for GaN based MMICs","authors":"C. Campbell, D. Dumka, M. Kao","doi":"10.1109/COMCAS.2009.5386036","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386036","url":null,"abstract":"Select considerations related to Gallium Nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in Gallium Arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130043516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386031
J. Szwarc
The most precise measuring of electrical current is achieved by the Current Sensing Resistor method. The precision and speed of response to changing current depend on thermal stability of the resistor — its low Temperature Coefficient of Resistance and a related to it Power Coefficient of Resistance. The new Foil resistor technology (Z foil) reduced the TCR to below 1 ppm/°C and special construction reduced the thermal distortion leading to a current detector with a Precision of a few parts per million within a Fraction of a Second.
{"title":"Current sensing with a precision of a few parts per million within a fraction of a second","authors":"J. Szwarc","doi":"10.1109/COMCAS.2009.5386031","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386031","url":null,"abstract":"The most precise measuring of electrical current is achieved by the Current Sensing Resistor method. The precision and speed of response to changing current depend on thermal stability of the resistor — its low Temperature Coefficient of Resistance and a related to it Power Coefficient of Resistance. The new Foil resistor technology (Z foil) reduced the TCR to below 1 ppm/°C and special construction reduced the thermal distortion leading to a current detector with a Precision of a few parts per million within a Fraction of a Second.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114222931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386044
I. Vendik, D. Kholodnyak, P. Kapitanova, K. Zemlyakov
Design of microwave devices based on a combination of traditional right-handed transmission line sections with positive dispersion and metamaterial left-handed transmission line sections with negative dispersion is considered. Compared to homogeneous transmission lines, the use of cascaded line sections gives additional degrees of freedom for the design of microwave devices with enlarged functionality and unique performance. Artificial way of right- and left-handed transmission lines realization based on lumped-element equivalent cells helps to minimize the dimensions of microwave devices. For filters, a combination of cascaded right- and left-handed transmission lines can be applied advantageously, to control the position and the widths of the individual pass-bands and the parasitic response of higher harmonics. The design of tunable dual-band filters is discussed and experimental results are presented. The miniature tuneable directional coupler is also under consideration. Artificial right- and left-handed transmission line sections based on lumped-element Π-cells are employed. In order to verify the theoretical prediction, a tuneable lumped-element rat-race ring has been designed and experimentally investigated. Semiconductor varactor diodes have been used as tuneable components.
{"title":"Multifunctional microwave devices based on metamaterial transmission lines","authors":"I. Vendik, D. Kholodnyak, P. Kapitanova, K. Zemlyakov","doi":"10.1109/COMCAS.2009.5386044","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386044","url":null,"abstract":"Design of microwave devices based on a combination of traditional right-handed transmission line sections with positive dispersion and metamaterial left-handed transmission line sections with negative dispersion is considered. Compared to homogeneous transmission lines, the use of cascaded line sections gives additional degrees of freedom for the design of microwave devices with enlarged functionality and unique performance. Artificial way of right- and left-handed transmission lines realization based on lumped-element equivalent cells helps to minimize the dimensions of microwave devices. For filters, a combination of cascaded right- and left-handed transmission lines can be applied advantageously, to control the position and the widths of the individual pass-bands and the parasitic response of higher harmonics. The design of tunable dual-band filters is discussed and experimental results are presented. The miniature tuneable directional coupler is also under consideration. Artificial right- and left-handed transmission line sections based on lumped-element Π-cells are employed. In order to verify the theoretical prediction, a tuneable lumped-element rat-race ring has been designed and experimentally investigated. Semiconductor varactor diodes have been used as tuneable components.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114333796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386013
Nadav Snir, Noam Bar-Helmer, R. Pasternak, D. Regev
The design of commercially packaged LNA at X band frequencies necessitates the examination of different circuit aspects and poses some significant challenges. The selected package and the resulting parasitic need to be carefully examined as they have a significant impact on the design. While parasitic can easily degrade LNA performance, package's high Q inductance can be leveraged to lower input losses and improve noise performance. In this work, commercial SiGe 0.18 technology was selected for its inherent high gain and low noise. RF grounding approach in this design achieved minimal parasitic effects. Extensive electromagnetic simulations needed to model and simulate circuit layout and package parasitic. Simulated results at room temperature predict LNA Gain of over 19dB, NF lower than 1.3 dB and IIP3 of −6dBm.
{"title":"A packaged X-band low noise amplifier","authors":"Nadav Snir, Noam Bar-Helmer, R. Pasternak, D. Regev","doi":"10.1109/COMCAS.2009.5386013","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386013","url":null,"abstract":"The design of commercially packaged LNA at X band frequencies necessitates the examination of different circuit aspects and poses some significant challenges. The selected package and the resulting parasitic need to be carefully examined as they have a significant impact on the design. While parasitic can easily degrade LNA performance, package's high Q inductance can be leveraged to lower input losses and improve noise performance. In this work, commercial SiGe 0.18 technology was selected for its inherent high gain and low noise. RF grounding approach in this design achieved minimal parasitic effects. Extensive electromagnetic simulations needed to model and simulate circuit layout and package parasitic. Simulated results at room temperature predict LNA Gain of over 19dB, NF lower than 1.3 dB and IIP3 of −6dBm.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"2001 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128280080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/COMCAS.2009.5386054
Steve Dudkiewicz
For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. I V, S-Parameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.
{"title":"Pulsed-bias pulsed-RF harmonic load pull for Gallium Nitride (GaN) and wide band-gap (WBG) devices","authors":"Steve Dudkiewicz","doi":"10.1109/COMCAS.2009.5386054","DOIUrl":"https://doi.org/10.1109/COMCAS.2009.5386054","url":null,"abstract":"For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. I V, S-Parameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122032576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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