Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362979
R. Ritchie, D. Andrews
Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.
{"title":"CF4/O2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies","authors":"R. Ritchie, D. Andrews","doi":"10.1109/IRPS.1981.362979","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362979","url":null,"abstract":"Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114637725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362980
H. Charles, B. Romenesko
The results of an extensive program for the solder reflow attachment and reliability testiny of ceramic chip carriers for use in space satellites, implantable biomedical electronics, and underwater instrumentation are discussed in detail. The program was divided in three major parts; 1) the packaging of integrated circuit chips in ceramic carriers; 2) the selection and qualification of solders, reflow methods and cleaning processes; and 3) the validation of the chip carrier-substrate system for high reliability applications. Military Standard environmental testing of ceramic chip carriers alone and carriers attached to thin film and thick film (multilayer) ceramic substrates, glass, sapphire, and various printed wire circuit boards has been conducted. Test results are presented for various carrier-substrate-solder combinations along with discussions of associated failure modes and fabrication problem areas.
{"title":"The Reflow Attachment and Reliability Testing of Ceramic Chip Carriers","authors":"H. Charles, B. Romenesko","doi":"10.1109/IRPS.1981.362980","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362980","url":null,"abstract":"The results of an extensive program for the solder reflow attachment and reliability testiny of ceramic chip carriers for use in space satellites, implantable biomedical electronics, and underwater instrumentation are discussed in detail. The program was divided in three major parts; 1) the packaging of integrated circuit chips in ceramic carriers; 2) the selection and qualification of solders, reflow methods and cleaning processes; and 3) the validation of the chip carrier-substrate system for high reliability applications. Military Standard environmental testing of ceramic chip carriers alone and carriers attached to thin film and thick film (multilayer) ceramic substrates, glass, sapphire, and various printed wire circuit boards has been conducted. Test results are presented for various carrier-substrate-solder combinations along with discussions of associated failure modes and fabrication problem areas.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130883954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.363000
G. Digiacomo
{"title":"Reaction Kinetics of Al Films with Phosphosilicate Glass (PSG) in Semiconductors","authors":"G. Digiacomo","doi":"10.1109/IRPS.1981.363000","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363000","url":null,"abstract":"","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133753905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362975
P. Bossard, J. Mucha
There has been considerable effort devoted to developing techniques for measuring the moisture content of hermetically sealed integrated circuit packages. Three techniques have generally been used for this purpose: 1) mass spectrometric analysis [1], 2) measurement of a suitably calibrated device characteristic [2], and 3) dew point determinations based on d.c. surface leakage or capacitance [3,4]. In this report, a new method [51 which utilizes derivative infrared spectra for quantitating trace amounts of water vapor, in a manner that eliminates the effects of adsorption or desorption in the test cell on the results of the measurements, is described. The technique is applied to the measurement of the water vapor content of "standard' TO-18 cans and 18 pin side brazed ceramic packages. Because of the sensitivity and selfcalibrating nature of this technique, it can accurately measure water vapor concentrations in the range of 102 to 104 ppm from 50 AQ volumes.
{"title":"Dynamic Measurement of the Water Vapor Content of Integrated Circuit Packages using Derivative Infrared Diode Laser Spectroscopy","authors":"P. Bossard, J. Mucha","doi":"10.1109/IRPS.1981.362975","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362975","url":null,"abstract":"There has been considerable effort devoted to developing techniques for measuring the moisture content of hermetically sealed integrated circuit packages. Three techniques have generally been used for this purpose: 1) mass spectrometric analysis [1], 2) measurement of a suitably calibrated device characteristic [2], and 3) dew point determinations based on d.c. surface leakage or capacitance [3,4]. In this report, a new method [51 which utilizes derivative infrared spectra for quantitating trace amounts of water vapor, in a manner that eliminates the effects of adsorption or desorption in the test cell on the results of the measurements, is described. The technique is applied to the measurement of the water vapor content of \"standard' TO-18 cans and 18 pin side brazed ceramic packages. Because of the sensitivity and selfcalibrating nature of this technique, it can accurately measure water vapor concentrations in the range of 102 to 104 ppm from 50 AQ volumes.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128232238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362994
B. Drotman, Jim Silva
Recent moisture resistance tests of various multilayer top brazed ceramic flat packs have revealed a serious design deficiency. These flat packs which utilize a tungsten interconnect system, in the presence of high humidity, suffer a galvanic corrosion which anodically consumes the tungsten. This may ultimately produce an open circuit. The results indicate that the lead plating system does not adequately seal off the interface area where the tungsten stripe gresses from the inside of the package.
{"title":"The Effects of Moisture on Multilayered Ceramic Top Brazed Flat Packs","authors":"B. Drotman, Jim Silva","doi":"10.1109/IRPS.1981.362994","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362994","url":null,"abstract":"Recent moisture resistance tests of various multilayer top brazed ceramic flat packs have revealed a serious design deficiency. These flat packs which utilize a tungsten interconnect system, in the presence of high humidity, suffer a galvanic corrosion which anodically consumes the tungsten. This may ultimately produce an open circuit. The results indicate that the lead plating system does not adequately seal off the interface area where the tungsten stripe gresses from the inside of the package.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122633492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-10-01DOI: 10.1109/IRPS.1981.363004
P. Ghate
A search for reliability improvement of Al film interconnections has led to the introduction of Al-Alloy films such as Al+Cu, Al+Si, Al+Cu+Si and so on. This paper describes thie results of an in-depth study of Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) film interconnections and Silicon/Al-Alloy film contacts as they impact reliability of integrated circuits. Resistivity, microstructure and composition of Al-Alloy films vacuum deposited from an induction heated source (In-Source) and dc magnetron sputter deposition techniques have been investigated and it is concluded that both film deposition techniques are equally capable of producing these Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) films of comparable physical properties. Chemical Analysis, X-Ray Fluorescence, Electron Microprobe, Scanning and Transmission Electron Microscopy and Ion Microprobe have been employed for Al-Alloy film characterization. Availability of automated dc magnetron sputter deposition equipment was a primary factor in the selection of magnetron sputter deposited Al-Alloy films for electromigration testing. Electromigration life tests on Al, Al+Cu and Al+Cu+Si film conductors (0.8 ¿m thick, 6 ¿m wide and 380, ¿m long) have been carried out at a current density of 1 × 106/ A/cm2 in the 150°C to 215°C ambience. Also, shallow junction devices with depths on the order of 0.
{"title":"Electromigration Testing of Al-Alloy Films","authors":"P. Ghate","doi":"10.1109/IRPS.1981.363004","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363004","url":null,"abstract":"A search for reliability improvement of Al film interconnections has led to the introduction of Al-Alloy films such as Al+Cu, Al+Si, Al+Cu+Si and so on. This paper describes thie results of an in-depth study of Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) film interconnections and Silicon/Al-Alloy film contacts as they impact reliability of integrated circuits. Resistivity, microstructure and composition of Al-Alloy films vacuum deposited from an induction heated source (In-Source) and dc magnetron sputter deposition techniques have been investigated and it is concluded that both film deposition techniques are equally capable of producing these Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) films of comparable physical properties. Chemical Analysis, X-Ray Fluorescence, Electron Microprobe, Scanning and Transmission Electron Microscopy and Ion Microprobe have been employed for Al-Alloy film characterization. Availability of automated dc magnetron sputter deposition equipment was a primary factor in the selection of magnetron sputter deposited Al-Alloy films for electromigration testing. Electromigration life tests on Al, Al+Cu and Al+Cu+Si film conductors (0.8 ¿m thick, 6 ¿m wide and 380, ¿m long) have been carried out at a current density of 1 × 106/ A/cm2 in the 150°C to 215°C ambience. Also, shallow junction devices with depths on the order of 0.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116663242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IRPS.1981.362989
J. F. D. Porto, D. Loescher, H. Olson, P. Plunkett
Packaged LSI and hybrid devices used in high reliability military and space applications must pass a rigorous series of screens defined by Method 5004 of Mil Standard 883B. One of these screens is the Particle Impact Noise Detection (PIND) test. This test uses a very sensitive acoustic transducer to listen for particles within the package while the package is vibrated and shocked. We have used SEM, EDAX, and optical microscopy to analyze the particles from PIND failures. From these analyses we have identified the primary sources of PIND failures and have developed procedures that yield a low reject rate at PIND test. The device used in this investigation was a 1 K RAM die eutectically attached to a 24-pin leadless hermetic package (LHP). The package is solder sealed in a belt furnace with a gold-tin eutectic preform and a gold-plated cover. We have recovered the particles from PIND test failures by placing lead tape over a punched hole in the gold plated Kovar lid. The package is then vibrated until the particles pass through the hole and are attached to the adhesive on the tape. From the analyses we have identified many sources of particles that cause PIND test failures; the main source being the gold-tin solder preform used in the sealing process. We have investigated the effect of sealing materials, furnace temperature, furnace ambient, and package orientation on the number of gold-tin solder spheres.
{"title":"SEM/EDAX Analysis of PIND Test Failures","authors":"J. F. D. Porto, D. Loescher, H. Olson, P. Plunkett","doi":"10.1109/IRPS.1981.362989","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362989","url":null,"abstract":"Packaged LSI and hybrid devices used in high reliability military and space applications must pass a rigorous series of screens defined by Method 5004 of Mil Standard 883B. One of these screens is the Particle Impact Noise Detection (PIND) test. This test uses a very sensitive acoustic transducer to listen for particles within the package while the package is vibrated and shocked. We have used SEM, EDAX, and optical microscopy to analyze the particles from PIND failures. From these analyses we have identified the primary sources of PIND failures and have developed procedures that yield a low reject rate at PIND test. The device used in this investigation was a 1 K RAM die eutectically attached to a 24-pin leadless hermetic package (LHP). The package is solder sealed in a belt furnace with a gold-tin eutectic preform and a gold-plated cover. We have recovered the particles from PIND test failures by placing lead tape over a punched hole in the gold plated Kovar lid. The package is then vibrated until the particles pass through the hole and are attached to the adhesive on the tape. From the analyses we have identified many sources of particles that cause PIND test failures; the main source being the gold-tin solder preform used in the sealing process. We have investigated the effect of sealing materials, furnace temperature, furnace ambient, and package orientation on the number of gold-tin solder spheres.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126082050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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