Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362996
A. Goel
This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.
{"title":"Procedure for Testing Electrostatic Discharge Susceptibility of MOS Devices","authors":"A. Goel","doi":"10.1109/IRPS.1981.362996","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362996","url":null,"abstract":"This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123178342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362997
A. Berman
Using a long-established feature of time dependent dielectric breakdown (TDDB) it is demonstrated that a ramped voltage breakdown histogram of a sample population can be used to accurately forecast the rate of breakdown failures in the field. It is shown that such a histogram can be interpreted as the field dependence of failure at constant time. The tamp-TDDB relationship involves no fitting parameters and only a single material-related parameter. The temperature dependence of this parameter is established for SiO2 Extensive ramp-life test measurements have verified the relationship experimentally. It is argued that the usual models used to relate laboratory life tests to reliability failures are inherently faulty. The faults stem from the temperature dependence and the distributions of failure times, both of which must be assumed in order to extrapolate accelerated life tests to use conditions. On the other hand the actual distribution is measured in a ramp test and the temperature acceleration is not needed. This finding has far-reaching implications for reliability assessment. Dielectric life tests can be replaced by the relatively simple and rapid ramp test with increased confidence in projection. From the analysis it is shown that the effect on reliability of a high field screen can be quantitatively determined in an absolute manner.
{"title":"Time-Zero Dielectric Reliability Test by a Ramp Method","authors":"A. Berman","doi":"10.1109/IRPS.1981.362997","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362997","url":null,"abstract":"Using a long-established feature of time dependent dielectric breakdown (TDDB) it is demonstrated that a ramped voltage breakdown histogram of a sample population can be used to accurately forecast the rate of breakdown failures in the field. It is shown that such a histogram can be interpreted as the field dependence of failure at constant time. The tamp-TDDB relationship involves no fitting parameters and only a single material-related parameter. The temperature dependence of this parameter is established for SiO2 Extensive ramp-life test measurements have verified the relationship experimentally. It is argued that the usual models used to relate laboratory life tests to reliability failures are inherently faulty. The faults stem from the temperature dependence and the distributions of failure times, both of which must be assumed in order to extrapolate accelerated life tests to use conditions. On the other hand the actual distribution is measured in a ramp test and the temperature acceleration is not needed. This finding has far-reaching implications for reliability assessment. Dielectric life tests can be replaced by the relatively simple and rapid ramp test with increased confidence in projection. From the analysis it is shown that the effect on reliability of a high field screen can be quantitatively determined in an absolute manner.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121622980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362976
R. Usell, S. A. Smiley
Methods to quantify mechanical strains in plastic encapsulated devices (PEDs) are described. Calculations of strain-producing tendencies of encapsulants from material properties and processes are given. Measurements of die strain as a function of encapsulant, processing, and environmental exposure are presented. Possible mechanisms for gap formation between chip and encapsulant during autoclave tests are described.
{"title":"Experimental and Mathematical Determination of Mechanical Strains within Plastic IC Packages and Their Effect on Devices During Environmental Tests","authors":"R. Usell, S. A. Smiley","doi":"10.1109/IRPS.1981.362976","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362976","url":null,"abstract":"Methods to quantify mechanical strains in plastic encapsulated devices (PEDs) are described. Calculations of strain-producing tendencies of encapsulants from material properties and processes are given. Measurements of die strain as a function of encapsulant, processing, and environmental exposure are presented. Possible mechanisms for gap formation between chip and encapsulant during autoclave tests are described.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129261402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362982
R. L. Wiker, R. Carter
Testing of pseudo-nonvolatile memories with finite, varying periods of unpowered retention presents unique and difficult problems to test engineers. This paper shows some accelerated methods of predicting and measuring retention and endurance characteristics that allows MNOS memory devices to be 100% tested and sorted for these critical parameters in a cost effective manner. Testing of non-volatile memories with finite non-permanent periods of unpowered retention presents unique and difficult problems to test engineers. This complex problem is further complicated by the fact that the retention characteristic is dynamic in that it changes as a function of the device write/erase history. These factors add a third and fourth dimension to the normal two dimensioned memory test problem.
{"title":"Accelerated Testing of Time Related Parameters in MNOS Memories","authors":"R. L. Wiker, R. Carter","doi":"10.1109/IRPS.1981.362982","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362982","url":null,"abstract":"Testing of pseudo-nonvolatile memories with finite, varying periods of unpowered retention presents unique and difficult problems to test engineers. This paper shows some accelerated methods of predicting and measuring retention and endurance characteristics that allows MNOS memory devices to be 100% tested and sorted for these critical parameters in a cost effective manner. Testing of non-volatile memories with finite non-permanent periods of unpowered retention presents unique and difficult problems to test engineers. This complex problem is further complicated by the fact that the retention characteristic is dynamic in that it changes as a function of the device write/erase history. These factors add a third and fourth dimension to the normal two dimensioned memory test problem.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127453331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.363005
D. Shih, P. Ficalora
Thin film diffusion couples were prepared by a sequential deposition of Al and Au on clean glass substrates in an ultra-high vacuum system. Aluminum was deposited at a rate of 1 nm sec¿1 to a thickness of 0.6 ¿m and then 0.12 ¿m of Au, which was shuttered to cover half of the Al film, at a rate of 0.1 nm sec¿1. Diffusion annealing of the couples was carried out at 250°C for 45 minutes in 0.5 atm. of either oxygen or argon gas. Optical and SEM examination of the couples annealed in argon showed ball-like intermetallic compound formation across the entire film, that is, even on that part of the Al film which was not covered with Au. Those films which had been annealed in oxygen showed dendritic intermetallic formation only in the region where the Au covered the Al; the uncovered Al region of the film was clean. These observations are explained on the basis of adsorbed gas and its effect on surface diffusion.
{"title":"The Effect of Oxygen and Argon on the Interdiffusion of Au-Al Thin Film Couples","authors":"D. Shih, P. Ficalora","doi":"10.1109/IRPS.1981.363005","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363005","url":null,"abstract":"Thin film diffusion couples were prepared by a sequential deposition of Al and Au on clean glass substrates in an ultra-high vacuum system. Aluminum was deposited at a rate of 1 nm sec¿1 to a thickness of 0.6 ¿m and then 0.12 ¿m of Au, which was shuttered to cover half of the Al film, at a rate of 0.1 nm sec¿1. Diffusion annealing of the couples was carried out at 250°C for 45 minutes in 0.5 atm. of either oxygen or argon gas. Optical and SEM examination of the couples annealed in argon showed ball-like intermetallic compound formation across the entire film, that is, even on that part of the Al film which was not covered with Au. Those films which had been annealed in oxygen showed dendritic intermetallic formation only in the region where the Au covered the Al; the uncovered Al region of the film was clean. These observations are explained on the basis of adsorbed gas and its effect on surface diffusion.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126935420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.363008
R. Marcus, T. Sheng
As VLSI technology moves in a direction toward more complex chips with increasingly smaller design rules, device failure analysts have been asked to produce microscope images of VLSI features with increasingly greater resolution. This has led to the increased use of the transmission electron microscope (TEM) as an integral part of process development/failure analysis efforts. The major obstacle to the use of the TEM has been the problem of sample preparation; satisfactory sample preparation methods have been developed, and these methods and the use of a TEM test pattern are described. Both the TEM and scanning electron microscope have other modes of operation (in addition to morphology study) that are relevant and in some cases essential to process development/failure analysis effort, and these are described: junction delineation, phase identification, chemical analysis, electrical mapping and microdefect analysis.
{"title":"Electron Microscopy and Failure Analysis","authors":"R. Marcus, T. Sheng","doi":"10.1109/IRPS.1981.363008","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363008","url":null,"abstract":"As VLSI technology moves in a direction toward more complex chips with increasingly smaller design rules, device failure analysts have been asked to produce microscope images of VLSI features with increasingly greater resolution. This has led to the increased use of the transmission electron microscope (TEM) as an integral part of process development/failure analysis efforts. The major obstacle to the use of the TEM has been the problem of sample preparation; satisfactory sample preparation methods have been developed, and these methods and the use of a TEM test pattern are described. Both the TEM and scanning electron microscope have other modes of operation (in addition to morphology study) that are relevant and in some cases essential to process development/failure analysis effort, and these are described: junction delineation, phase identification, chemical analysis, electrical mapping and microdefect analysis.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134640285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/irps.1981.362964
D. Crook, W. K. Meyer
Programmable redundant row and column elements are presently being used as a yield enhancement tool on the more advanced high density memory devices. This paper summarizes a comprehensive reliability study which was conducted to insure acceptable reliability standards on products using redundancy. Data on fuse programming are presented which indicate acceptable fuse reliability. Also, data are presented which show that the potential problem of contamination entering through the fuse holes has been eliminated with guardrings and circuit layout. Other potential reliability problems with the redundancy concept such as the effects of process defects interacting with adjacent cells and defect clustering were evaluated. The results indicate that standard screening techniques used in previous NMOS technologies are adequate to achieve acceptable reliability. Product data are presented which indicate devices using redundancy are as reliable as previous generation memory devices.
{"title":"Redundancy Reliability","authors":"D. Crook, W. K. Meyer","doi":"10.1109/irps.1981.362964","DOIUrl":"https://doi.org/10.1109/irps.1981.362964","url":null,"abstract":"Programmable redundant row and column elements are presently being used as a yield enhancement tool on the more advanced high density memory devices. This paper summarizes a comprehensive reliability study which was conducted to insure acceptable reliability standards on products using redundancy. Data on fuse programming are presented which indicate acceptable fuse reliability. Also, data are presented which show that the potential problem of contamination entering through the fuse holes has been eliminated with guardrings and circuit layout. Other potential reliability problems with the redundancy concept such as the effects of process defects interacting with adjacent cells and defect clustering were evaluated. The results indicate that standard screening techniques used in previous NMOS technologies are adequate to achieve acceptable reliability. Product data are presented which indicate devices using redundancy are as reliable as previous generation memory devices.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121892211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362991
R. S. Hemmert
On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.
{"title":"Temperature Dependent Defect Level for an Ionic Failure Mechanism","authors":"R. S. Hemmert","doi":"10.1109/IRPS.1981.362991","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362991","url":null,"abstract":"On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121586686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.362967
E. S. Anolick, Li-Yu Chen
A method of speeding up testing by step stressing is described. The mathematic models utilized, the theoretical and experimental results, and application to final failure rate estimates are shown.
{"title":"Application of Step Stress to Time Dependent Breakdown","authors":"E. S. Anolick, Li-Yu Chen","doi":"10.1109/IRPS.1981.362967","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362967","url":null,"abstract":"A method of speeding up testing by step stressing is described. The mathematic models utilized, the theoretical and experimental results, and application to final failure rate estimates are shown.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115526011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-04-01DOI: 10.1109/IRPS.1981.363009
A. Dermarderosian, V. Gionet, V. Caccamesi
A simple and inexpensive technique for locating shorts/hot spots and measuring surface temperatures of semiconductor die is described and detailed with some examples. The technique involves the visual observation of the point at which liquid evaporation (shorts/hot spots) or gaseous condensation (surface temperature) occurs on the surface of the semiconductor die. A 16 mm motion picture film has been made which vividly demonstrates these effects.
{"title":"Condensation Thermography - A Novel Approach for Locating Short Circuits and Determing Surface Temperatures in Semiconductor Die","authors":"A. Dermarderosian, V. Gionet, V. Caccamesi","doi":"10.1109/IRPS.1981.363009","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363009","url":null,"abstract":"A simple and inexpensive technique for locating shorts/hot spots and measuring surface temperatures of semiconductor die is described and detailed with some examples. The technique involves the visual observation of the point at which liquid evaporation (shorts/hot spots) or gaseous condensation (surface temperature) occurs on the surface of the semiconductor die. A 16 mm motion picture film has been made which vividly demonstrates these effects.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126622858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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