Y. Hagi, S. Kawarabayashi, T. Inoue, R. Nakai, J. Kohno, T. Kawase, M. Tatsumi
3-inch Si doped GaAs crystals with low dislocation density (/spl les/100 cm/sup -2/) were developed by the Vertical Boat (VB) method. The shape of the solid/liquid interface was controlled by the temperature gradient near the interface. The desirable interface shape for low dislocation density was studied both empirically and through computer simulation. By improving the interface shape, the stable production of crystals with low dislocation density were achieved.
{"title":"Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth","authors":"Y. Hagi, S. Kawarabayashi, T. Inoue, R. Nakai, J. Kohno, T. Kawase, M. Tatsumi","doi":"10.1109/SIM.1996.571099","DOIUrl":"https://doi.org/10.1109/SIM.1996.571099","url":null,"abstract":"3-inch Si doped GaAs crystals with low dislocation density (/spl les/100 cm/sup -2/) were developed by the Vertical Boat (VB) method. The shape of the solid/liquid interface was controlled by the temperature gradient near the interface. The desirable interface shape for low dislocation density was studied both empirically and through computer simulation. By improving the interface shape, the stable production of crystals with low dislocation density were achieved.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"544 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126902790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.
{"title":"Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs","authors":"S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel","doi":"10.1109/SIM.1996.571095","DOIUrl":"https://doi.org/10.1109/SIM.1996.571095","url":null,"abstract":"A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115128898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The growth and properties of Sil,Cy and Sil~,GeXC, alloys pseudomorphically strained on Si(OO1) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Sil~,GeXCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
{"title":"SiGeC materials","authors":"H. Osten","doi":"10.1109/sim.1996.570938","DOIUrl":"https://doi.org/10.1109/sim.1996.570938","url":null,"abstract":"The growth and properties of Sil,Cy and Sil~,GeXC, alloys pseudomorphically strained on Si(OO1) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Sil~,GeXCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129302382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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