R. Buhleier, J. Iehl, J. Collet, V. Bardinal, C. Fontaine, R. Legros
The temporal and spectral response of bulk GaAs Fabry-Perot microcavities have been investigated in the subpicosecond regime at room temperature. Time resolved reflectivity measurements show a strong reshaping of a Gaussian fs-pulse after reflection from a microcavity caused by group velocity dispersion. The pulse distortion agrees fairly well with model calculations using Fourier transform analysis. Time integrated degenerate four-wave mixing experiments show that response times of the cavity as short as 300 fs were achieved.
{"title":"Subpicosecond response of GaAs Fabry-Perot microcavities","authors":"R. Buhleier, J. Iehl, J. Collet, V. Bardinal, C. Fontaine, R. Legros","doi":"10.1109/SIM.1996.571110","DOIUrl":"https://doi.org/10.1109/SIM.1996.571110","url":null,"abstract":"The temporal and spectral response of bulk GaAs Fabry-Perot microcavities have been investigated in the subpicosecond regime at room temperature. Time resolved reflectivity measurements show a strong reshaping of a Gaussian fs-pulse after reflection from a microcavity caused by group velocity dispersion. The pulse distortion agrees fairly well with model calculations using Fourier transform analysis. Time integrated degenerate four-wave mixing experiments show that response times of the cavity as short as 300 fs were achieved.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124808577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Sanchez, T. Cloitre, P. Bigenwald, A. Chergui, B. Honerlague, R. Aulombard
Graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser were grown by MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzine adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. We have first investigated the quality of thick ZnCdSe layers grown using this adduct. GRIN-SCH structures grown using the two cadmium metalorganics were studied using photoluminescence and optical pumping experiments. Stimulated emission was observed for the two kind of samples.
{"title":"ZnCdSe-ZnSe heterostructures grown by MOVPE: influence of the cadmium precursor","authors":"S. Sanchez, T. Cloitre, P. Bigenwald, A. Chergui, B. Honerlague, R. Aulombard","doi":"10.1109/SIM.1996.570914","DOIUrl":"https://doi.org/10.1109/SIM.1996.570914","url":null,"abstract":"Graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser were grown by MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzine adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. We have first investigated the quality of thick ZnCdSe layers grown using this adduct. GRIN-SCH structures grown using the two cadmium metalorganics were studied using photoluminescence and optical pumping experiments. Stimulated emission was observed for the two kind of samples.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"30 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126738898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.
{"title":"Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu","authors":"B.H. Yang, D. Seghier, H. Gíslason","doi":"10.1109/SIM.1996.570931","DOIUrl":"https://doi.org/10.1109/SIM.1996.570931","url":null,"abstract":"Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The d.c. and a.c. electrical conduction has been studied in GaAs layer grown by molecular beam epitaxy between 150/spl deg/C and 400/spl deg/C. It is found that the admittance versus frequency, Y(/spl omega/), exhibits a universal behaviour. At low frequencies Y(/spl omega/) is constant, then exhibits a minimum at /spl omega//sub m/. At high frequencies Y(/spl omega/) varies linearly as /spl omega/ showing that conduction occurs via hopping. The temperature dependence of Y(0) indicates that this hopping conduction occurs in a partially filled band related to EL2 defects, the direct relationship between /spl omega//sub m/ and Y(0) demonstrates the existence of a percolation regime, i.e. of a conduction limited by insulating regions which we attribute to space charge regions developed around as precipitates.
{"title":"Characterization of conduction in LTG-GaAs","authors":"J. Bourgoin, K. Khirouni, J. Nagle","doi":"10.1109/SIM.1996.570870","DOIUrl":"https://doi.org/10.1109/SIM.1996.570870","url":null,"abstract":"The d.c. and a.c. electrical conduction has been studied in GaAs layer grown by molecular beam epitaxy between 150/spl deg/C and 400/spl deg/C. It is found that the admittance versus frequency, Y(/spl omega/), exhibits a universal behaviour. At low frequencies Y(/spl omega/) is constant, then exhibits a minimum at /spl omega//sub m/. At high frequencies Y(/spl omega/) varies linearly as /spl omega/ showing that conduction occurs via hopping. The temperature dependence of Y(0) indicates that this hopping conduction occurs in a partially filled band related to EL2 defects, the direct relationship between /spl omega//sub m/ and Y(0) demonstrates the existence of a percolation regime, i.e. of a conduction limited by insulating regions which we attribute to space charge regions developed around as precipitates.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127682128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growing LT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have been performed. Although numerous optoelectronic applications of LT GaAs have been demonstrated we believe that this is one of the rare cases when LT GaAs has been used in semiconductor laser technology.
{"title":"LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers","authors":"K. Reginski, A. Malag, D. Radomska, M. Bugajski","doi":"10.1109/SIM.1996.571113","DOIUrl":"https://doi.org/10.1109/SIM.1996.571113","url":null,"abstract":"In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growing LT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have been performed. Although numerous optoelectronic applications of LT GaAs have been demonstrated we believe that this is one of the rare cases when LT GaAs has been used in semiconductor laser technology.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126736908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al/sub 0.2/Ga/sub 0.8/As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (V/sub III/), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (I/sub III/) A reduction of V/sub III/ concentration in the Si-doped sample and an increase of I/sub III/ concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the "kick-out" mechanism explains well the experimental results.
{"title":"Zn diffusion-induced disordering in semi-insulating, p-doped, and n-doped GaAs/AlGaAs multilayered structures: a comparative study","authors":"N. H. Ky","doi":"10.1109/SIM.1996.570877","DOIUrl":"https://doi.org/10.1109/SIM.1996.570877","url":null,"abstract":"Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al/sub 0.2/Ga/sub 0.8/As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (V/sub III/), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (I/sub III/) A reduction of V/sub III/ concentration in the Si-doped sample and an increase of I/sub III/ concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the \"kick-out\" mechanism explains well the experimental results.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127482471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Jagadish, H. Tan, A. Krotkus, S. Marcinkevičius, K. Korona, J. Jasiński, M. Kamińska
The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600/spl deg/C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O.
{"title":"Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs","authors":"C. Jagadish, H. Tan, A. Krotkus, S. Marcinkevičius, K. Korona, J. Jasiński, M. Kamińska","doi":"10.1109/SIM.1996.570873","DOIUrl":"https://doi.org/10.1109/SIM.1996.570873","url":null,"abstract":"The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600/spl deg/C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have studied the radiative recombination from two different type of GaN samples using photoluminescence and time resolved photoluminescence, in the temperature range from 2 K to room temperature. The emission at low temperatures is dominated by the recombination of donor bound excitons, with decay time of about 250 ps. At temperatures from 40 K and up to room temperature the free exciton recombination is dominating. In the bulk sample we observe an increase of the measured decay time at temperatures up to 15 K, interpreted as the presence of a dominating radiative recombination for the free exciton. The decay time of the free exciton at higher temperatures is dominated by non-radiative recombination.
{"title":"Temperature dependence of the radiative recombination in GaN","authors":"J. Bergman, B. Monemar, H. Amano, I. Akasaki","doi":"10.1109/SIM.1996.570887","DOIUrl":"https://doi.org/10.1109/SIM.1996.570887","url":null,"abstract":"We have studied the radiative recombination from two different type of GaN samples using photoluminescence and time resolved photoluminescence, in the temperature range from 2 K to room temperature. The emission at low temperatures is dominated by the recombination of donor bound excitons, with decay time of about 250 ps. At temperatures from 40 K and up to room temperature the free exciton recombination is dominating. In the bulk sample we observe an increase of the measured decay time at temperatures up to 15 K, interpreted as the presence of a dominating radiative recombination for the free exciton. The decay time of the free exciton at higher temperatures is dominated by non-radiative recombination.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116759617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Kordos, J. Betkó, M. Morvic, J. Novák, A. Forster
Precise temperature dependent conductivity measurements are carried out and the room temperature band and hopping components of the conductivity are determined for as-grown and annealed (590/spl deg/C, 10 min) MBE GaAs layers grown at various temperatures between 200 and 420/spl deg/C. It is found that the hopping conductivity strongly decreases and the band conductivity slightly changes with increasing growth temperature. The /spl sigma//sub hop/ to /spl sigma//sub band/ ratio decreases from 1/spl times/10/sup 6/ to 2/spl times/10/sup -2/ in as-grown layers and from 2/spl times/10/sup 2/ to 2/spl times/10/sup -3/ in annealed layers with increased growth temperature from 200 to 420/spl deg/C. The band and hopping components are comparable for unannealed layer grown at 400/spl deg/C and annealed layer grown at 350/spl deg/C. Layers grown at <350/spl deg/C are lattice mismatched in as-grown state. Further it is found that layers with dominating hopping show different electrical breakdown properties than layers with dominating band conductance.
{"title":"Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420/spl deg/C","authors":"P. Kordos, J. Betkó, M. Morvic, J. Novák, A. Forster","doi":"10.1109/SIM.1996.570872","DOIUrl":"https://doi.org/10.1109/SIM.1996.570872","url":null,"abstract":"Precise temperature dependent conductivity measurements are carried out and the room temperature band and hopping components of the conductivity are determined for as-grown and annealed (590/spl deg/C, 10 min) MBE GaAs layers grown at various temperatures between 200 and 420/spl deg/C. It is found that the hopping conductivity strongly decreases and the band conductivity slightly changes with increasing growth temperature. The /spl sigma//sub hop/ to /spl sigma//sub band/ ratio decreases from 1/spl times/10/sup 6/ to 2/spl times/10/sup -2/ in as-grown layers and from 2/spl times/10/sup 2/ to 2/spl times/10/sup -3/ in annealed layers with increased growth temperature from 200 to 420/spl deg/C. The band and hopping components are comparable for unannealed layer grown at 400/spl deg/C and annealed layer grown at 350/spl deg/C. Layers grown at <350/spl deg/C are lattice mismatched in as-grown state. Further it is found that layers with dominating hopping show different electrical breakdown properties than layers with dominating band conductance.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127600768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Keršulis, V. Mitin, R. Malek, M. Djafari Rouhani
We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.
{"title":"Computer simulation of the growth of silicon ridges and wires","authors":"S. Keršulis, V. Mitin, R. Malek, M. Djafari Rouhani","doi":"10.1109/SIM.1996.571108","DOIUrl":"https://doi.org/10.1109/SIM.1996.571108","url":null,"abstract":"We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125346732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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