Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.
{"title":"Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu","authors":"B.H. Yang, D. Seghier, H. Gíslason","doi":"10.1109/SIM.1996.570931","DOIUrl":"https://doi.org/10.1109/SIM.1996.570931","url":null,"abstract":"Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al/sub 0.2/Ga/sub 0.8/As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (V/sub III/), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (I/sub III/) A reduction of V/sub III/ concentration in the Si-doped sample and an increase of I/sub III/ concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the "kick-out" mechanism explains well the experimental results.
{"title":"Zn diffusion-induced disordering in semi-insulating, p-doped, and n-doped GaAs/AlGaAs multilayered structures: a comparative study","authors":"N. H. Ky","doi":"10.1109/SIM.1996.570877","DOIUrl":"https://doi.org/10.1109/SIM.1996.570877","url":null,"abstract":"Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al/sub 0.2/Ga/sub 0.8/As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (V/sub III/), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (I/sub III/) A reduction of V/sub III/ concentration in the Si-doped sample and an increase of I/sub III/ concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the \"kick-out\" mechanism explains well the experimental results.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127482471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.
{"title":"Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE","authors":"C. Meva'a, P. Rojo-Romeo, X. Letartre","doi":"10.1109/SIM.1996.570932","DOIUrl":"https://doi.org/10.1109/SIM.1996.570932","url":null,"abstract":"The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130681590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Valakh, B. N. Romaniuk, V. Artamonov, N. Klyui, A. Pérez‐Rodríguez, L. Calvo‐Barrio, C. Serre, J. Morante, B. Dietrich
The effect of thermal annealing and C/sup +/ implantation on the Raman spectra of Si/sub 1-x/Ge/sub x/ (x=0.22, 0.29) strained layers grown on Si is investigated. For the annealed samples, relaxation is only observed after annealing at temperatures higher than 800/spl deg/C. However, full relaxation is not achieved even after annealing at 1050/spl deg/C. Samples annealed at this temperature show a residual stress in the range of 8 Kbars. For the implanted samples (with C peak concentration close to 2%), there is not a substantial shift of the Si-Si mode, in spite of the significant stress compensation in the layers. The strong lattice microdistortion near the C atoms is likely the main reason of this effect.
{"title":"Raman scattering analysis of SiGe annealed and implanted layers","authors":"M. Valakh, B. N. Romaniuk, V. Artamonov, N. Klyui, A. Pérez‐Rodríguez, L. Calvo‐Barrio, C. Serre, J. Morante, B. Dietrich","doi":"10.1109/SIM.1996.571086","DOIUrl":"https://doi.org/10.1109/SIM.1996.571086","url":null,"abstract":"The effect of thermal annealing and C/sup +/ implantation on the Raman spectra of Si/sub 1-x/Ge/sub x/ (x=0.22, 0.29) strained layers grown on Si is investigated. For the annealed samples, relaxation is only observed after annealing at temperatures higher than 800/spl deg/C. However, full relaxation is not achieved even after annealing at 1050/spl deg/C. Samples annealed at this temperature show a residual stress in the range of 8 Kbars. For the implanted samples (with C peak concentration close to 2%), there is not a substantial shift of the Si-Si mode, in spite of the significant stress compensation in the layers. The strong lattice microdistortion near the C atoms is likely the main reason of this effect.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132995577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Noise characteristics are evaluated for SiGe/Si based n-channel HEMTs and p-channel MOSFETs. The analysis is based on a self-consistent solution of Schroedinger and Poisson's equations. The model predicts a superior minimum noise figure for an n-channel HEMT at 77 K. p-channel MOSFETs behave similar to n-channel devices operating at 300 K. The minimum noise figure decreases with increasing quantum well (QW) width for both n- and p-channel devices. However, the p-channel devices are less sensitive to QW width variation. Minimum noise temperature behaves similarly. As observed, a range of doped epilayer thickness exists where the minimum noise figure is a minimum for both n- and p-channel FETs.
{"title":"Noise performance of Si/Si/sub 1-x/Ge/sub x/ n-channel HEMTs and p-channel FETs","authors":"Kuo-Wei Liu, A. Anwar","doi":"10.1109/SIM.1996.571084","DOIUrl":"https://doi.org/10.1109/SIM.1996.571084","url":null,"abstract":"Noise characteristics are evaluated for SiGe/Si based n-channel HEMTs and p-channel MOSFETs. The analysis is based on a self-consistent solution of Schroedinger and Poisson's equations. The model predicts a superior minimum noise figure for an n-channel HEMT at 77 K. p-channel MOSFETs behave similar to n-channel devices operating at 300 K. The minimum noise figure decreases with increasing quantum well (QW) width for both n- and p-channel devices. However, the p-channel devices are less sensitive to QW width variation. Minimum noise temperature behaves similarly. As observed, a range of doped epilayer thickness exists where the minimum noise figure is a minimum for both n- and p-channel FETs.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132235941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.
{"title":"Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model","authors":"J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay","doi":"10.1109/SIM.1996.570937","DOIUrl":"https://doi.org/10.1109/SIM.1996.570937","url":null,"abstract":"Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133969891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Jagadish, H. Tan, A. Krotkus, S. Marcinkevičius, K. Korona, J. Jasiński, M. Kamińska
The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600/spl deg/C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O.
{"title":"Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs","authors":"C. Jagadish, H. Tan, A. Krotkus, S. Marcinkevičius, K. Korona, J. Jasiński, M. Kamińska","doi":"10.1109/SIM.1996.570873","DOIUrl":"https://doi.org/10.1109/SIM.1996.570873","url":null,"abstract":"The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600/spl deg/C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have studied the radiative recombination from two different type of GaN samples using photoluminescence and time resolved photoluminescence, in the temperature range from 2 K to room temperature. The emission at low temperatures is dominated by the recombination of donor bound excitons, with decay time of about 250 ps. At temperatures from 40 K and up to room temperature the free exciton recombination is dominating. In the bulk sample we observe an increase of the measured decay time at temperatures up to 15 K, interpreted as the presence of a dominating radiative recombination for the free exciton. The decay time of the free exciton at higher temperatures is dominated by non-radiative recombination.
{"title":"Temperature dependence of the radiative recombination in GaN","authors":"J. Bergman, B. Monemar, H. Amano, I. Akasaki","doi":"10.1109/SIM.1996.570887","DOIUrl":"https://doi.org/10.1109/SIM.1996.570887","url":null,"abstract":"We have studied the radiative recombination from two different type of GaN samples using photoluminescence and time resolved photoluminescence, in the temperature range from 2 K to room temperature. The emission at low temperatures is dominated by the recombination of donor bound excitons, with decay time of about 250 ps. At temperatures from 40 K and up to room temperature the free exciton recombination is dominating. In the bulk sample we observe an increase of the measured decay time at temperatures up to 15 K, interpreted as the presence of a dominating radiative recombination for the free exciton. The decay time of the free exciton at higher temperatures is dominated by non-radiative recombination.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116759617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Kordos, J. Betkó, M. Morvic, J. Novák, A. Forster
Precise temperature dependent conductivity measurements are carried out and the room temperature band and hopping components of the conductivity are determined for as-grown and annealed (590/spl deg/C, 10 min) MBE GaAs layers grown at various temperatures between 200 and 420/spl deg/C. It is found that the hopping conductivity strongly decreases and the band conductivity slightly changes with increasing growth temperature. The /spl sigma//sub hop/ to /spl sigma//sub band/ ratio decreases from 1/spl times/10/sup 6/ to 2/spl times/10/sup -2/ in as-grown layers and from 2/spl times/10/sup 2/ to 2/spl times/10/sup -3/ in annealed layers with increased growth temperature from 200 to 420/spl deg/C. The band and hopping components are comparable for unannealed layer grown at 400/spl deg/C and annealed layer grown at 350/spl deg/C. Layers grown at <350/spl deg/C are lattice mismatched in as-grown state. Further it is found that layers with dominating hopping show different electrical breakdown properties than layers with dominating band conductance.
{"title":"Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420/spl deg/C","authors":"P. Kordos, J. Betkó, M. Morvic, J. Novák, A. Forster","doi":"10.1109/SIM.1996.570872","DOIUrl":"https://doi.org/10.1109/SIM.1996.570872","url":null,"abstract":"Precise temperature dependent conductivity measurements are carried out and the room temperature band and hopping components of the conductivity are determined for as-grown and annealed (590/spl deg/C, 10 min) MBE GaAs layers grown at various temperatures between 200 and 420/spl deg/C. It is found that the hopping conductivity strongly decreases and the band conductivity slightly changes with increasing growth temperature. The /spl sigma//sub hop/ to /spl sigma//sub band/ ratio decreases from 1/spl times/10/sup 6/ to 2/spl times/10/sup -2/ in as-grown layers and from 2/spl times/10/sup 2/ to 2/spl times/10/sup -3/ in annealed layers with increased growth temperature from 200 to 420/spl deg/C. The band and hopping components are comparable for unannealed layer grown at 400/spl deg/C and annealed layer grown at 350/spl deg/C. Layers grown at <350/spl deg/C are lattice mismatched in as-grown state. Further it is found that layers with dominating hopping show different electrical breakdown properties than layers with dominating band conductance.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127600768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Keršulis, V. Mitin, R. Malek, M. Djafari Rouhani
We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.
{"title":"Computer simulation of the growth of silicon ridges and wires","authors":"S. Keršulis, V. Mitin, R. Malek, M. Djafari Rouhani","doi":"10.1109/SIM.1996.571108","DOIUrl":"https://doi.org/10.1109/SIM.1996.571108","url":null,"abstract":"We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125346732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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