It is observed that the sidegate voltage has an influence on the gate barrier of FETs and the behavior of leakage current in substrates via the gate metal pad lying on the semi-insulating GaAs substrate. A simple mechanism is proposed to interpret the observation.
{"title":"Influence of the Schottky pad in semi-insulating GaAs on the Schottky barrier in the active layer","authors":"J. Wu, Z.G. Wang, M. Zhang, T. Fan, L.Y. Lin","doi":"10.1109/SIM.1996.571117","DOIUrl":"https://doi.org/10.1109/SIM.1996.571117","url":null,"abstract":"It is observed that the sidegate voltage has an influence on the gate barrier of FETs and the behavior of leakage current in substrates via the gate metal pad lying on the semi-insulating GaAs substrate. A simple mechanism is proposed to interpret the observation.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126029339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Le Gratiet, E. Bedel, R. Grac, C. Fontaine, M. Pugnet
In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 /spl mu/J/ cm/sup 2/.
{"title":"Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field","authors":"L. Le Gratiet, E. Bedel, R. Grac, C. Fontaine, M. Pugnet","doi":"10.1109/SIM.1996.571112","DOIUrl":"https://doi.org/10.1109/SIM.1996.571112","url":null,"abstract":"In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 /spl mu/J/ cm/sup 2/.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123759933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical and optical properties of Zn/sub x/Mg/sub 1-x/Se/ZnTe and Zn/sub x/Mg/sub 1-x/Se/GaAs heterojunctions","authors":"W. Bala, G. Glowacki, A. Gapinski","doi":"10.1109/SIM.1996.570911","DOIUrl":"https://doi.org/10.1109/SIM.1996.570911","url":null,"abstract":"","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123201730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti
As-grown semiconducting InP wafers containing iron at a level between 5 and 8/spl times/10/sup 15/ cm/sup -3/ were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900/spl deg/C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.
{"title":"Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers","authors":"R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti","doi":"10.1109/SIM.1996.570865","DOIUrl":"https://doi.org/10.1109/SIM.1996.570865","url":null,"abstract":"As-grown semiconducting InP wafers containing iron at a level between 5 and 8/spl times/10/sup 15/ cm/sup -3/ were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900/spl deg/C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124466777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Vorobiev, R. V. Zakharchenko, G. N. Semenova, A. V. Svitelskiy, T. Torchinskaya
Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.
{"title":"Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels","authors":"Y. Vorobiev, R. V. Zakharchenko, G. N. Semenova, A. V. Svitelskiy, T. Torchinskaya","doi":"10.1109/SIM.1996.571107","DOIUrl":"https://doi.org/10.1109/SIM.1996.571107","url":null,"abstract":"Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122571278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Bigenwald, B. Gil, L. Konczewicz, P. Testud, R. Aulombard
The authors have investigated theoretically the optical properties of strained (001) GaAs-(Ga,In)As simple quantum wells with a high Indium content ({approximately}35%). Due to the band offset, the e{sub 1}lh{sub 1} transition is marginally type I for x > 25% and type II otherwise. They calculate the exciton parameters within a model that includes the attractive potential created by the condensed electron wavefunction on the marginal light hole one. The influence of the electric field on the valence wavefunctions away from k = 0 is also studied.
{"title":"Excitons in III-V strained marginal systems: dispersion relations and absorption processes","authors":"P. Bigenwald, B. Gil, L. Konczewicz, P. Testud, R. Aulombard","doi":"10.1109/SIM.1996.570903","DOIUrl":"https://doi.org/10.1109/SIM.1996.570903","url":null,"abstract":"The authors have investigated theoretically the optical properties of strained (001) GaAs-(Ga,In)As simple quantum wells with a high Indium content ({approximately}35%). Due to the band offset, the e{sub 1}lh{sub 1} transition is marginally type I for x > 25% and type II otherwise. They calculate the exciton parameters within a model that includes the attractive potential created by the condensed electron wavefunction on the marginal light hole one. The influence of the electric field on the valence wavefunctions away from k = 0 is also studied.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122135038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present experimental results on the selective interdiffusion of GaAs/GaAlAs quantum well heterostructures induced by SiO/sub 2/ and Si/sub 3/N/sub 4/ capping and annealing. Comparative studies show that interdiffusion occurs under SiO/sub 2/ in the case of patterned Si/sub 3/N/sub 4/ strips coated with SiO/sub 2/, while interdiffused areas surprisingly appear below Si/sub 3/N/sub 4/ in the reversed case where patterned SiO/sub 2/ strips are coated with Si/sub 3/N/sub 4/. Our work demonstrates that the diffusion of the excess gallium vacancies, which are responsible for the enhanced interdiffusion, is driven by the stress field generated by the dielectric patterned layers.
{"title":"Evidence of stress dependence in the diffusion of point defects in GaAs/GaAlAs heterostructures","authors":"A. Pépin, C. Vieu, M. Schneider, H. Launois","doi":"10.1109/SIM.1996.571094","DOIUrl":"https://doi.org/10.1109/SIM.1996.571094","url":null,"abstract":"We present experimental results on the selective interdiffusion of GaAs/GaAlAs quantum well heterostructures induced by SiO/sub 2/ and Si/sub 3/N/sub 4/ capping and annealing. Comparative studies show that interdiffusion occurs under SiO/sub 2/ in the case of patterned Si/sub 3/N/sub 4/ strips coated with SiO/sub 2/, while interdiffused areas surprisingly appear below Si/sub 3/N/sub 4/ in the reversed case where patterned SiO/sub 2/ strips are coated with Si/sub 3/N/sub 4/. Our work demonstrates that the diffusion of the excess gallium vacancies, which are responsible for the enhanced interdiffusion, is driven by the stress field generated by the dielectric patterned layers.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124695617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Aguir, J. Bandet, D. Lollman, B. Roumiguieres, H. Carchano
We report on electrical properties and Raman scattering of amorphous GaAs/sub 1-x/N/sub x/ deposited on p-doped Si substrates. We have investigated the dielectric character of GaAs/sub 1-x/N/sub x/ in view of its applications in GaAs-based technologies. The a-GaAs/sub 1-x/N/sub x/ thin films are obtained by reactive RF sputtering of a GaAs target. The electrical characteristics of the a-GaAs/sub 1-x/N/sub x//c-Si(p) heterostructures present a MIS-like structure behaviour with some imperfections. Raman scattering points out that a-GaAs/sub 1-x/N/sub x/ is a wide gap material which is formed by the substitution of arsenic by nitrogen in the GaAs network.
{"title":"An electrical and Raman spectroscopic study of a-GaAs/sub 1-x/N/sub x//Si heterostructures","authors":"K. Aguir, J. Bandet, D. Lollman, B. Roumiguieres, H. Carchano","doi":"10.1109/SIM.1996.570907","DOIUrl":"https://doi.org/10.1109/SIM.1996.570907","url":null,"abstract":"We report on electrical properties and Raman scattering of amorphous GaAs/sub 1-x/N/sub x/ deposited on p-doped Si substrates. We have investigated the dielectric character of GaAs/sub 1-x/N/sub x/ in view of its applications in GaAs-based technologies. The a-GaAs/sub 1-x/N/sub x/ thin films are obtained by reactive RF sputtering of a GaAs target. The electrical characteristics of the a-GaAs/sub 1-x/N/sub x//c-Si(p) heterostructures present a MIS-like structure behaviour with some imperfections. Raman scattering points out that a-GaAs/sub 1-x/N/sub x/ is a wide gap material which is formed by the substitution of arsenic by nitrogen in the GaAs network.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128747154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present single shot transmission experiments with 20 ps laser pulses. When a 10/sup 5/ V/cm static electric field is applied on a CdTe/Cd/sub 0.62/Zn/sub 0.38/Te multiple quantum well, the optical transmission increases. At a 804 nm wavelength the enhancement factor is equal to 1.6. For a pulse intensity higher than 0.7 fJ /spl mu/m/sup -2/, screening of the applied electric field occurs, restoring a zero-field transmission. These experiments imply that the screening rise time is shorter than 10 ps which results from weak confinement of the holes within the quantum wells.
{"title":"Picosecond all-optical modulation in CdTe/CdZnTe multi-quantum wells under an applied electric field","authors":"R. Grac, M. Pugnet, N. Magnea, J. Pautrat","doi":"10.1109/SIM.1996.570916","DOIUrl":"https://doi.org/10.1109/SIM.1996.570916","url":null,"abstract":"We present single shot transmission experiments with 20 ps laser pulses. When a 10/sup 5/ V/cm static electric field is applied on a CdTe/Cd/sub 0.62/Zn/sub 0.38/Te multiple quantum well, the optical transmission increases. At a 804 nm wavelength the enhancement factor is equal to 1.6. For a pulse intensity higher than 0.7 fJ /spl mu/m/sup -2/, screening of the applied electric field occurs, restoring a zero-field transmission. These experiments imply that the screening rise time is shorter than 10 ps which results from weak confinement of the holes within the quantum wells.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"291 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120913055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Chaldyshev, N. Bert, N. Faleev, A. E. Kunitsyn, V. Tret’yakov, V. Preobrazhenskii, M. A. Putyato, B. Semyagin
Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200/spl deg/C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed.
{"title":"Control of spatial distribution of As clusters in LT GaAs by indium delta doping","authors":"V. Chaldyshev, N. Bert, N. Faleev, A. E. Kunitsyn, V. Tret’yakov, V. Preobrazhenskii, M. A. Putyato, B. Semyagin","doi":"10.1109/SIM.1996.570871","DOIUrl":"https://doi.org/10.1109/SIM.1996.570871","url":null,"abstract":"Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200/spl deg/C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116692420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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