I-V curves of semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe (E/sub g/=1.9 eV) with various Fe concentrations obtained at 125/spl deg/C are presented, The shapes of these curves are characteristic of the measurements made at 100 to 200/spl deg/C. The I-V behaviour of the material is different if Fe concentration is below or above 1.5/spl times/10/sup 17/ cm/sup -3/. Differential resistivity derived from these curves also exhibits a maximum at Fe=1.5/spl times/10/sup 17/ cm/sup -3/. These observations indicate that the cause of semi-insulation may be different below and above this concentration. It is suggested that Fe may be mostly site incorporated in the low concentration regime and mostly in the form of Fe-P complexes in the high concentration regime, A GaInP/GaInAsP/GaAs buried heterostructure with semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe regrowth has been fabricated for the first time to demonstrate the usefulness of the investigated material in device fabrication.
{"title":"Iron doped semi-insulating GaInP lattice matched to GaAs for device fabrication","authors":"S. Lourdudoss, R. Holz","doi":"10.1109/SIM.1996.570867","DOIUrl":"https://doi.org/10.1109/SIM.1996.570867","url":null,"abstract":"I-V curves of semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe (E/sub g/=1.9 eV) with various Fe concentrations obtained at 125/spl deg/C are presented, The shapes of these curves are characteristic of the measurements made at 100 to 200/spl deg/C. The I-V behaviour of the material is different if Fe concentration is below or above 1.5/spl times/10/sup 17/ cm/sup -3/. Differential resistivity derived from these curves also exhibits a maximum at Fe=1.5/spl times/10/sup 17/ cm/sup -3/. These observations indicate that the cause of semi-insulation may be different below and above this concentration. It is suggested that Fe may be mostly site incorporated in the low concentration regime and mostly in the form of Fe-P complexes in the high concentration regime, A GaInP/GaInAsP/GaAs buried heterostructure with semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe regrowth has been fabricated for the first time to demonstrate the usefulness of the investigated material in device fabrication.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126163325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Gutkin, M. Reshchikov, V. Sedov, V.R. Sosnovskii
We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V/sub Ga/Te/sub As/, V/sub Ga/Sn/sub Ga/ and V/sub Ga/Si/sub Ga/ complexes responsible for the 1.2 eV PL band and the Cu/sub Ga/Te/sub As/, Cu/sub Ga/S/sub As/ and Cu/sub Ga/Se/sub As/ complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature.
我们研究了单轴压力对GaAs中与配合物相关的宽光致发光(PL)带偏振的影响。结果表明，1.2 eV PL波段的V/sub Ga/Te/sub As/、V/sub Ga/Sn/sub Ga/和V/sub Ga/Si/sub Ga/配合物以及1.3 eV PL波段的Cu/sub Ga/Te/sub As/、Cu/sub Ga/S/sub As/和Cu/sub Ga/Se/sub As/配合物具有额外的畸变，在低温PL观测条件下，这种畸变可以通过单轴压力重新定向和排列。
{"title":"Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure","authors":"A. Gutkin, M. Reshchikov, V. Sedov, V.R. Sosnovskii","doi":"10.1109/SIM.1996.571096","DOIUrl":"https://doi.org/10.1109/SIM.1996.571096","url":null,"abstract":"We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V/sub Ga/Te/sub As/, V/sub Ga/Sn/sub Ga/ and V/sub Ga/Si/sub Ga/ complexes responsible for the 1.2 eV PL band and the Cu/sub Ga/Te/sub As/, Cu/sub Ga/S/sub As/ and Cu/sub Ga/Se/sub As/ complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114912186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Periodic dielectric structures have been recently proposed to inhibit spontaneous emission in semiconductors. From this suggestion, the new concepts of photonic band gap and photonic crystal have been developed. Zero-threshold lasers, waveguides, antenna substrates, filters and polarizers are promising applications. We propose a new class of two-dimensional periodic dielectric structures with hexagonal symmetry. We study the gap opening according to whether the dielectric constant of the cylinders is larger or smaller than that of the background. A potential application for the creation of photonic crystals in the optical domain is discussed.
{"title":"Hexagonal structures for two-dimensional photonic crystals","authors":"D. Cassagne, C. Jouanin, D. Bertho","doi":"10.1109/SIM.1996.571115","DOIUrl":"https://doi.org/10.1109/SIM.1996.571115","url":null,"abstract":"Periodic dielectric structures have been recently proposed to inhibit spontaneous emission in semiconductors. From this suggestion, the new concepts of photonic band gap and photonic crystal have been developed. Zero-threshold lasers, waveguides, antenna substrates, filters and polarizers are promising applications. We propose a new class of two-dimensional periodic dielectric structures with hexagonal symmetry. We study the gap opening according to whether the dielectric constant of the cylinders is larger or smaller than that of the background. A potential application for the creation of photonic crystals in the optical domain is discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129855281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.
{"title":"Surface modification of SiC thin films by pulsed electron and ion beams","authors":"S. Korenev, J. Huran, A. Kobzev","doi":"10.1109/SIM.1996.571092","DOIUrl":"https://doi.org/10.1109/SIM.1996.571092","url":null,"abstract":"The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130248490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Dubecký, J. Darmo, M. Krempaský, J. Betkó, I. Bešše, M. Pikna, A. Šatka, J. Oswald, P. Pelfer
The role of deep levels and material inhomogeneities is studied in regard to their influence on the parameters of Cr-doped and undoped bulk semi-insulating GaAsb-based particle detectors. It is shown that the charge collection efficiency and the energy resolution of detectors is strongly affected by physical properties of starting material.
{"title":"On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials","authors":"F. Dubecký, J. Darmo, M. Krempaský, J. Betkó, I. Bešše, M. Pikna, A. Šatka, J. Oswald, P. Pelfer","doi":"10.1109/SIM.1996.570881","DOIUrl":"https://doi.org/10.1109/SIM.1996.570881","url":null,"abstract":"The role of deep levels and material inhomogeneities is studied in regard to their influence on the parameters of Cr-doped and undoped bulk semi-insulating GaAsb-based particle detectors. It is shown that the charge collection efficiency and the energy resolution of detectors is strongly affected by physical properties of starting material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130622136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén
The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.
{"title":"Donor doping calibration in 4H-SiC using photoluminescence spectroscopy","authors":"I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén","doi":"10.1109/SIM.1996.570944","DOIUrl":"https://doi.org/10.1109/SIM.1996.570944","url":null,"abstract":"The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130093928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to study deep defects in undoped LEC-grown GaAs, photo induced current transient spectroscopy (PICTS) has been carried out on materials with a depletion region. Five main traps were observed. In addition to positions in the gap, it is shown that the nature of carrier traps can also be identified. Contributions from the surface and the bulk of the material in the PICTS signal, are compared. Also, effects from the excitation light wavelength on PICTS spectra, are reported.
{"title":"On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy","authors":"D. Seghier, H. Gíslason","doi":"10.1109/SIM.1996.570927","DOIUrl":"https://doi.org/10.1109/SIM.1996.570927","url":null,"abstract":"In order to study deep defects in undoped LEC-grown GaAs, photo induced current transient spectroscopy (PICTS) has been carried out on materials with a depletion region. Five main traps were observed. In addition to positions in the gap, it is shown that the nature of carrier traps can also be identified. Contributions from the surface and the bulk of the material in the PICTS signal, are compared. Also, effects from the excitation light wavelength on PICTS spectra, are reported.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133705056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Couturier, P. Grosse, A. Grouillet, A. Chenevas-Paule
We report an in-situ method for accurate flux monitoring in gas-source molecular-beam epitaxy (GSMBE) growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement on the incomplete structure to estimate the values of the effusion cell fluxes (and therefore the thickness and the composition of the different layers) used for the growth of the first part of the device. The flux values are extracted using a simulated annealing algorithm. Before completing the structure, corrections are made in order to centre the cavity resonance of the final device at the desired wavelength.
{"title":"Accurate flux estimation during molecular beam epitaxy growth of vertical-cavity surface-emitting lasers","authors":"L. Couturier, P. Grosse, A. Grouillet, A. Chenevas-Paule","doi":"10.1109/SIM.1996.571114","DOIUrl":"https://doi.org/10.1109/SIM.1996.571114","url":null,"abstract":"We report an in-situ method for accurate flux monitoring in gas-source molecular-beam epitaxy (GSMBE) growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement on the incomplete structure to estimate the values of the effusion cell fluxes (and therefore the thickness and the composition of the different layers) used for the growth of the first part of the device. The flux values are extracted using a simulated annealing algorithm. Before completing the structure, corrections are made in order to centre the cavity resonance of the final device at the desired wavelength.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133135860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker
Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.
{"title":"Semi-insulating InP grown with a CCl/sub 4/ doping source","authors":"G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker","doi":"10.1109/SIM.1996.570863","DOIUrl":"https://doi.org/10.1109/SIM.1996.570863","url":null,"abstract":"Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"6 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120992070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed.
{"title":"Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope","authors":"M. Yamada, K. Ito, M. Fukuzawa","doi":"10.1109/SIM.1996.570934","DOIUrl":"https://doi.org/10.1109/SIM.1996.570934","url":null,"abstract":"In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115522041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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