Recently high quality GaN plates have been grown from the solution in liquid gallium at N/sub 2/ pressure up to 20 kbar and temperature close to 1600/spl deg/C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed.
{"title":"Growth of GaN single crystals and properties of homoepitaxial MOCVD layers","authors":"J. Baranowski, S. Porowski","doi":"10.1109/SIM.1996.570882","DOIUrl":"https://doi.org/10.1109/SIM.1996.570882","url":null,"abstract":"Recently high quality GaN plates have been grown from the solution in liquid gallium at N/sub 2/ pressure up to 20 kbar and temperature close to 1600/spl deg/C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"524 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126754785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.
{"title":"Nanoscale mapping of dopant distributions in InP current blocking layers","authors":"R. Hull, M. Moore, J. Walker","doi":"10.1109/SIM.1996.570923","DOIUrl":"https://doi.org/10.1109/SIM.1996.570923","url":null,"abstract":"A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127387341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers call be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.
{"title":"Effects of semi-insulating substrate on kink phenomena in GaAs MESFETs","authors":"K. Horio, K. Satoh","doi":"10.1109/SIM.1996.571118","DOIUrl":"https://doi.org/10.1109/SIM.1996.571118","url":null,"abstract":"Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers call be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130723453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Orlov, V. A. Tolomasov, A. Potapov, Y. Drozdov, V. Vdovin
We applied GeH/sub 4/-Si MBE for growing Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si(100). We investigated the distribution and the structure of defects inside heteroepitaxial Si/sub 1-x/Ge/sub x/ layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.
{"title":"Heteroepitaxy of Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si (100) substrates by GeH/sub 4/-Si MBE","authors":"L. Orlov, V. A. Tolomasov, A. Potapov, Y. Drozdov, V. Vdovin","doi":"10.1109/SIM.1996.570942","DOIUrl":"https://doi.org/10.1109/SIM.1996.570942","url":null,"abstract":"We applied GeH/sub 4/-Si MBE for growing Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si(100). We investigated the distribution and the structure of defects inside heteroepitaxial Si/sub 1-x/Ge/sub x/ layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134172425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Gȩbicki, W. Szuszkiewicz, J. Kossut, M. Jouanne
Raman scattering spectra of cubic Mn/sub x/Cd/sub 1-x/Te mixed crystals are measured in the range of compositions 0.7/spl les/x/spl les/1.0. Simplified dynamical matrix of the mixed crystal based on rigid ion model and virtual crystal approximation is constructed and phonon density of states is calculated. The calculated phonon density of states is compared with experimental Raman spectra of the MnTe cubic crystal.
{"title":"Lattice dynamics of Mn/sub x/Cd/sub 1-x/Te mixed crystals","authors":"W. Gȩbicki, W. Szuszkiewicz, J. Kossut, M. Jouanne","doi":"10.1109/SIM.1996.570918","DOIUrl":"https://doi.org/10.1109/SIM.1996.570918","url":null,"abstract":"Raman scattering spectra of cubic Mn/sub x/Cd/sub 1-x/Te mixed crystals are measured in the range of compositions 0.7/spl les/x/spl les/1.0. Simplified dynamical matrix of the mixed crystal based on rigid ion model and virtual crystal approximation is constructed and phonon density of states is calculated. The calculated phonon density of states is compared with experimental Raman spectra of the MnTe cubic crystal.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132567113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Admittance spectroscopy is shown to be a very convenient tool for analysing majority carrier traps. We have studied by this technique different n- and p-type 6H-SiC Schottky diodes and pn junctions for different net doping levels, N-type and p-type doping are obtained by nitrogen and aluminum respectively, For nitrogen, we have detected two energy levels at E/sub c/-82 meV and E/sub c/-137 meV, which are respectively attributed to hexagonal and cubic sites in 6H-SiC. For aluminum, we have generally detected a rather large variation in the measured activation energy. This variation is supposed to depend on the net doping level, that is, on the compensation ratio.
{"title":"Dopant level freeze-out in 6H-SiC Schottky diodes and junctions","authors":"C. Raynaud, G. Guillot","doi":"10.1109/SIM.1996.571082","DOIUrl":"https://doi.org/10.1109/SIM.1996.571082","url":null,"abstract":"Admittance spectroscopy is shown to be a very convenient tool for analysing majority carrier traps. We have studied by this technique different n- and p-type 6H-SiC Schottky diodes and pn junctions for different net doping levels, N-type and p-type doping are obtained by nitrogen and aluminum respectively, For nitrogen, we have detected two energy levels at E/sub c/-82 meV and E/sub c/-137 meV, which are respectively attributed to hexagonal and cubic sites in 6H-SiC. For aluminum, we have generally detected a rather large variation in the measured activation energy. This variation is supposed to depend on the net doping level, that is, on the compensation ratio.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131804598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.
{"title":"Annealing characteristics of native defects in low-temperature-grown MBE GaAs","authors":"J. Darmo, F. Dubecký, P. Kordos, A. Forster","doi":"10.1109/SIM.1996.570880","DOIUrl":"https://doi.org/10.1109/SIM.1996.570880","url":null,"abstract":"Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127824460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Groenen, G. Attolini, E. Chimenti, C. Pelosi, P. P. Lottici, R. Carles
Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.
{"title":"Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures","authors":"J. Groenen, G. Attolini, E. Chimenti, C. Pelosi, P. P. Lottici, R. Carles","doi":"10.1109/SIM.1996.570935","DOIUrl":"https://doi.org/10.1109/SIM.1996.570935","url":null,"abstract":"Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126513989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Otoki, M. Sahara, S. Takahashi, S. Kuma, M. Onishi, M. Kashiwa
Leakage of carbon-controlled semi-insulating GaAs crystals was investigated using various pairs of n-type (AuGe, with alloying), non-alloyed (Au) and p-type (AuZn, with alloying) electrodes. Large leakage currents were observed under two conditions: when positive voltage was applied to non-alloyed or p-type electrode with opposite-side electrode of n-type. This leakage had no relation to carbon concentration which determine the semi-insulating properties. Properties of the non-alloyed electrode were found to be very similar to those of p-type electrode. A model is proposed which can explain all the results, taking into account band-bending near the electrode.
{"title":"Leakage current from non-alloyed metal on carbon controlled semi-insulating GaAs crystals","authors":"Y. Otoki, M. Sahara, S. Takahashi, S. Kuma, M. Onishi, M. Kashiwa","doi":"10.1109/SIM.1996.570933","DOIUrl":"https://doi.org/10.1109/SIM.1996.570933","url":null,"abstract":"Leakage of carbon-controlled semi-insulating GaAs crystals was investigated using various pairs of n-type (AuGe, with alloying), non-alloyed (Au) and p-type (AuZn, with alloying) electrodes. Large leakage currents were observed under two conditions: when positive voltage was applied to non-alloyed or p-type electrode with opposite-side electrode of n-type. This leakage had no relation to carbon concentration which determine the semi-insulating properties. Properties of the non-alloyed electrode were found to be very similar to those of p-type electrode. A model is proposed which can explain all the results, taking into account band-bending near the electrode.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117278705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. A. Bykovsky, V. I. Karas, V.F. Shoh, S. Strzelecka, A. Hruban, M. Gładysz
The electrical properties, photoluminescence and DLTS spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) has been investigated as functions of starting material properties, irradiation dose and thermal to fast neutron fluences-ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and formed nonradiative recombination centers, which are stable up to 700/spl deg/C.
{"title":"Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide","authors":"V. A. Bykovsky, V. I. Karas, V.F. Shoh, S. Strzelecka, A. Hruban, M. Gładysz","doi":"10.1109/SIM.1996.571106","DOIUrl":"https://doi.org/10.1109/SIM.1996.571106","url":null,"abstract":"The electrical properties, photoluminescence and DLTS spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) has been investigated as functions of starting material properties, irradiation dose and thermal to fast neutron fluences-ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and formed nonradiative recombination centers, which are stable up to 700/spl deg/C.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127901824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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