Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551862
A. Prager, H. George, A. Orlov, G. Snider
We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.
{"title":"CMOS kink effect-induced instability in Al/AlOx single electron transistors","authors":"A. Prager, H. George, A. Orlov, G. Snider","doi":"10.1109/DRC.2010.5551862","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551862","url":null,"abstract":"We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132485328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551909
Brett Hulla, J. Zhang, M. Das, S. Ryu, C. Jonas, S. Dhar, S. Haney, R. Callanan, J. Richmond
Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has been far more recently that the potential of SiC is being appreciated as a result of the recent advances in material quality, fabrication processes and device design. Based on the high critical breakdown electric field, high bandgap and high thermal conductivity of SiC, systems that are specifically designed to take advantage of these characteristics offer superior power density, lower cooling requirements, and prolonged survivability in adverse conditions when compared to systems fabricated with Si power devices.
{"title":"4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges","authors":"Brett Hulla, J. Zhang, M. Das, S. Ryu, C. Jonas, S. Dhar, S. Haney, R. Callanan, J. Richmond","doi":"10.1109/DRC.2010.5551909","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551909","url":null,"abstract":"Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has been far more recently that the potential of SiC is being appreciated as a result of the recent advances in material quality, fabrication processes and device design. Based on the high critical breakdown electric field, high bandgap and high thermal conductivity of SiC, systems that are specifically designed to take advantage of these characteristics offer superior power density, lower cooling requirements, and prolonged survivability in adverse conditions when compared to systems fabricated with Si power devices.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115340304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551896
Yifei Huang, B. Hekmatshoar, S. Wagner, J. Sturm
Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.
{"title":"High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh","authors":"Yifei Huang, B. Hekmatshoar, S. Wagner, J. Sturm","doi":"10.1109/DRC.2010.5551896","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551896","url":null,"abstract":"Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"236 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114695628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551979
D. Zhao, D. Mourey, T. Jackson
The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (< 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200 °C) anneal.
{"title":"Gamma-ray irradiation of ZnO thin film transistors and circuits","authors":"D. Zhao, D. Mourey, T. Jackson","doi":"10.1109/DRC.2010.5551979","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551979","url":null,"abstract":"The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (< 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200 °C) anneal.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122787513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551943
K. Ganapathi, Y. Yoon, S. Salahuddin
To summarize, we have shown that in comparison to a lateral device, a vertical structure may provide a larger ON current for similar OFF current. However, the subthreshold swing is degraded due to weaker gate control. We also show that there is a critical body thickness below which the vertical tunneling is greatly minimized. We find that significant vertical tunneling only starts at a large gate voltage and lateral tunneling almost acts as a leakage mechanism until this point. These facts indicate that (i) with a shallow pocket (ii) with right choice of doping densities in the source and pocket (iii) by effectively controlling the transport in lateral and vertical directions, e.g. by strain or by heterostructures, large ON currents with reasonable substreshold may be achieved.
{"title":"Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors","authors":"K. Ganapathi, Y. Yoon, S. Salahuddin","doi":"10.1109/DRC.2010.5551943","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551943","url":null,"abstract":"To summarize, we have shown that in comparison to a lateral device, a vertical structure may provide a larger ON current for similar OFF current. However, the subthreshold swing is degraded due to weaker gate control. We also show that there is a critical body thickness below which the vertical tunneling is greatly minimized. We find that significant vertical tunneling only starts at a large gate voltage and lateral tunneling almost acts as a leakage mechanism until this point. These facts indicate that (i) with a shallow pocket (ii) with right choice of doping densities in the source and pocket (iii) by effectively controlling the transport in lateral and vertical directions, e.g. by strain or by heterostructures, large ON currents with reasonable substreshold may be achieved.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130527596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551893
S. Bhowmick, G. Huang, W. Guo, C.S. Lee, P. Bhattachary, G. Ariyawansa, A. Perera
The detection of long wavelength and terahertz (THz) radiation is important for a number of applications including molecular spectroscopy, medical diagnostics, security and surveillance, quality control, and astronomy. Semiconductor based quantum dot (QD) and quantum ring (QR) detectors [1, 2] have been used for the detection of long wavelength radiation. While high temperature operation of the devices is desired for some applications, THz detectors operating at low temperatures are also in demand, particularly for astronomy and space applications. Another challenge for semiconductor-based detectors is operation in the 1–3 THz range. We report here a InAs/GaAs quantum ring intersublevel detector (QRID) with spectral response peaking at 1.82 THz (165 µm) and having a peak responsivity Rp of 25 A/W and specific detectivity D* of 1×1016 Jones for 1 V bias at 5.2 K. At 10 K, the spectral response peaks at 2.4 THz (125 µm) with Rp = 3 A/W and D* = 3×1015 Jones. These characteristics compare very favorably with those of bolometers that are currently used.
长波长和太赫兹(THz)辐射的检测对于包括分子光谱、医学诊断、安全和监视、质量控制和天文学在内的许多应用都很重要。基于半导体的量子点(QD)和量子环(QR)探测器[1,2]已被用于探测长波辐射。虽然某些应用需要设备的高温操作，但也需要在低温下操作的太赫兹探测器，特别是天文学和空间应用。半导体探测器的另一个挑战是在1-3太赫兹范围内工作。我们在此报道了一种InAs/GaAs量子环亚能级间探测器(QRID)，其光谱响应峰值为1.82 THz(165µm)，峰值响应率Rp为25 a /W，比探测率D*为1×1016 Jones, 1 V偏压为5.2 K。在10 K时，光谱响应峰值为2.4 THz(125µm)， Rp = 3 A/W, D* = 3×1015 Jones。这些特性与目前使用的辐射热计相比非常有利。
{"title":"A quantum ring detector for the 1–3 terahertz range with very high responsivity and specific detectivity","authors":"S. Bhowmick, G. Huang, W. Guo, C.S. Lee, P. Bhattachary, G. Ariyawansa, A. Perera","doi":"10.1109/DRC.2010.5551893","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551893","url":null,"abstract":"The detection of long wavelength and terahertz (THz) radiation is important for a number of applications including molecular spectroscopy, medical diagnostics, security and surveillance, quality control, and astronomy. Semiconductor based quantum dot (QD) and quantum ring (QR) detectors [1, 2] have been used for the detection of long wavelength radiation. While high temperature operation of the devices is desired for some applications, THz detectors operating at low temperatures are also in demand, particularly for astronomy and space applications. Another challenge for semiconductor-based detectors is operation in the 1–3 THz range. We report here a InAs/GaAs quantum ring intersublevel detector (QRID) with spectral response peaking at 1.82 THz (165 µm) and having a peak responsivity Rp of 25 A/W and specific detectivity D* of 1×1016 Jones for 1 V bias at 5.2 K. At 10 K, the spectral response peaks at 2.4 THz (125 µm) with Rp = 3 A/W and D* = 3×1015 Jones. These characteristics compare very favorably with those of bolometers that are currently used.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130850841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551853
M. Bao, Kin L. Wong, A. Khitun, Kang L. Wang
The research on spin wave is attracting more attentions and novel spin-wave based devices including nanometer size phase-shifter, logical gates, and spin-wave bus have been developed. In order to fully realize functions promised by spin waves, especially in cascaded signal processing, a device that can directly amplify spin-wave signal is indispensable. Ferromagnetic parametric amplifiers - amplifying spin-wave signals by pump waves whose frequencies are typically double of signal frequency, were proposed. So far, all demonstrated spin-wave amplification experiments reported by other groups have used ferrite insulating materials [1]. In this abstract, we report spin-wave amplification with a conducting metallic thin film as well as a new magnetic device property - nonreciprocal amplification of spin-wave signals even though the spin-wave propagation is reciprocal.
{"title":"Nonreciprocal amplification of spin-wave signals","authors":"M. Bao, Kin L. Wong, A. Khitun, Kang L. Wang","doi":"10.1109/DRC.2010.5551853","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551853","url":null,"abstract":"The research on spin wave is attracting more attentions and novel spin-wave based devices including nanometer size phase-shifter, logical gates, and spin-wave bus have been developed. In order to fully realize functions promised by spin waves, especially in cascaded signal processing, a device that can directly amplify spin-wave signal is indispensable. Ferromagnetic parametric amplifiers - amplifying spin-wave signals by pump waves whose frequencies are typically double of signal frequency, were proposed. So far, all demonstrated spin-wave amplification experiments reported by other groups have used ferrite insulating materials [1]. In this abstract, we report spin-wave amplification with a conducting metallic thin film as well as a new magnetic device property - nonreciprocal amplification of spin-wave signals even though the spin-wave propagation is reciprocal.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"98 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133893922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551928
B. Fallahazad, Seyoung Kim, L. Colombo, E. Tutuc
Graphene, a two-dimensional layer of carbon atoms in a honeycomb lattice, can potentially serve as an alternative channel material for future electronics technology owing to its high (> 10,000 cm2/Vs) intrinsic mobility. Understanding the carrier scattering mechanism in graphene devices with high-k dielectrics is key to enabling top dielectric-metal stacks that combine a high capacitance and high electron mobility. Here we provide a systematic study of carrier mobility as a function of HfO2 dielectric thickness, and as a function of temperature. Our results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric, and remains constant for thicker layers. The carrier mobility dependence on temperature is relatively weak, indicating that phonon scattering does not play a dominant role in degrading the carrier mobility. The results strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. We speculate that positively charged oxygen vacancies, ubiquitous in high-k dielectrics, are the mobility limiting factor.
{"title":"Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric","authors":"B. Fallahazad, Seyoung Kim, L. Colombo, E. Tutuc","doi":"10.1109/DRC.2010.5551928","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551928","url":null,"abstract":"Graphene, a two-dimensional layer of carbon atoms in a honeycomb lattice, can potentially serve as an alternative channel material for future electronics technology owing to its high (> 10,000 cm2/Vs) intrinsic mobility. Understanding the carrier scattering mechanism in graphene devices with high-k dielectrics is key to enabling top dielectric-metal stacks that combine a high capacitance and high electron mobility. Here we provide a systematic study of carrier mobility as a function of HfO2 dielectric thickness, and as a function of temperature. Our results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric, and remains constant for thicker layers. The carrier mobility dependence on temperature is relatively weak, indicating that phonon scattering does not play a dominant role in degrading the carrier mobility. The results strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. We speculate that positively charged oxygen vacancies, ubiquitous in high-k dielectrics, are the mobility limiting factor.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132208352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551934
N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, H. Happy
We have fabricated an original graphene field effect transistor (FET) on silicon carbide (SiC) substrate. Based on an array of parallel graphene nano ribbons (GNRs), these devices are well suited for high frequency (HF) applications. Exploration of HF performance shows at room temperature intrinsic current gain cut-off frequency (ft) of 10 GHz and maximum oscillation frequency (fmax) of 6 GHz. At 77 K, we find out that these HF performance are improved by about 50% (ft and fmax are respectively 15 GHz and 10 GHz). These results show the strong dependence of temperature on device performance.
{"title":"Influence of temperature on high frequency performance of graphene nano ribbon field effect transistor","authors":"N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, H. Happy","doi":"10.1109/DRC.2010.5551934","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551934","url":null,"abstract":"We have fabricated an original graphene field effect transistor (FET) on silicon carbide (SiC) substrate. Based on an array of parallel graphene nano ribbons (GNRs), these devices are well suited for high frequency (HF) applications. Exploration of HF performance shows at room temperature intrinsic current gain cut-off frequency (ft) of 10 GHz and maximum oscillation frequency (fmax) of 6 GHz. At 77 K, we find out that these HF performance are improved by about 50% (ft and fmax are respectively 15 GHz and 10 GHz). These results show the strong dependence of temperature on device performance.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132703559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/DRC.2010.5551929
O. Nayfeh, S. Kilpatrick, M. Dubey
Wafer-scale graphene synthesized by Chemical Vapor Deposition (CVD) has the potential to enable numerous advanced device and system capabilities [1–3]. The typical reported carrier mobility of CVD graphene is significantly lower than exfoliated or on-SiC material due potentially to different impurity/doping levels and material quality. Elucidating the potential carrier scattering sources in metal catalyzed CVD graphene is essential for realizing high mobility material for both holes and electrons. We constructed field effect transistors using Cu catalyzed LPCVD synthesized p-type doped monolayer graphene and used direct electrical measurements under ambient and vacuum conditions to analyze some important physical aspects of the majority and minority carrier mobility behavior. We measured a dependency between shifting of the Dirac Point directed towards neutral levels under soft vacuum/annealing conditions and an increase in the extracted low-field carrier mobility. Reduction in the effective p-type “doping” of the graphene results in an increase of the carrier mobility of both the minority electrons and majority holes, with a stronger majority carrier dependency. The measured I–V characteristics of the devices are modeled (in the scattering limited regime) using a simple drift/diffusion model implemented in a continuum simulator. Using this model, the effective doping density, carrier concentration, and mobility are extracted for electrons and holes. Analysis of the energy dependency of the carrier mean-free-path for back-scattering, suggests that the hole mobility in this CVD material is limited by large levels of Coulomb scattering, whereas the electron mobility is limited by a combination of both Coulomb and other shorter-range scattering.
{"title":"Majority and minority carrier mobility behavior and device modeling of doped CVD monolayer graphene transistors","authors":"O. Nayfeh, S. Kilpatrick, M. Dubey","doi":"10.1109/DRC.2010.5551929","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551929","url":null,"abstract":"Wafer-scale graphene synthesized by Chemical Vapor Deposition (CVD) has the potential to enable numerous advanced device and system capabilities [1–3]. The typical reported carrier mobility of CVD graphene is significantly lower than exfoliated or on-SiC material due potentially to different impurity/doping levels and material quality. Elucidating the potential carrier scattering sources in metal catalyzed CVD graphene is essential for realizing high mobility material for both holes and electrons. We constructed field effect transistors using Cu catalyzed LPCVD synthesized p-type doped monolayer graphene and used direct electrical measurements under ambient and vacuum conditions to analyze some important physical aspects of the majority and minority carrier mobility behavior. We measured a dependency between shifting of the Dirac Point directed towards neutral levels under soft vacuum/annealing conditions and an increase in the extracted low-field carrier mobility. Reduction in the effective p-type “doping” of the graphene results in an increase of the carrier mobility of both the minority electrons and majority holes, with a stronger majority carrier dependency. The measured I–V characteristics of the devices are modeled (in the scattering limited regime) using a simple drift/diffusion model implemented in a continuum simulator. Using this model, the effective doping density, carrier concentration, and mobility are extracted for electrons and holes. Analysis of the energy dependency of the carrier mean-free-path for back-scattering, suggests that the hole mobility in this CVD material is limited by large levels of Coulomb scattering, whereas the electron mobility is limited by a combination of both Coulomb and other shorter-range scattering.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130130125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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