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Tunnel field-effect transistors - status and prospects 隧道场效应晶体管的现状与展望
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551883
A. Seabaugh
This paper reviews recent progress in the development of tunnel field-effect transistors (TFETs) [1–5] toward achieving channel currents comparable to high performance MOSFETs at supply voltages less than 0.5 V and subthreshold swing less than 60 mV/decade, for logic applications. To enable high performance in TFETs, development of narrow bandgap III–V and graphene nanoribbon (GNR) channels is indicated. Beyond the switch, the tunnel junction could provide enhanced functionality and new ways to integrate logic and memory [6].
本文回顾了隧道场效应晶体管(tfet)的最新进展[1-5],以期在电源电压小于0.5 V、亚阈值摆幅小于60 mV/ 10年的情况下实现与高性能mosfet相当的通道电流,用于逻辑应用。为了在tfet中实现高性能,建议开发窄带隙III-V和石墨烯纳米带(GNR)通道。除了交换机之外,隧道结还可以提供增强的功能和集成逻辑和存储器的新方法[6]。
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引用次数: 6
All-spin logic All-spin逻辑
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551948
B. Behin-Aein, S. Datta
THE possible role of spin rather than charge as a state variable in devices for processing and storing information has been widely discussed, because it could allow low-power operation and might also have applications in quantum computing. However, spin-based experiments and proposals for logic applications typically use spin only as an internal variable, the terminal quantities for each individual logic gate still being charge-based. This requires repeated spin-to-charge conversion, using extra hardware that offsets any possible advantage.
在处理和存储信息的设备中,自旋而不是电荷作为状态变量的可能作用已经被广泛讨论,因为它可以允许低功耗操作,也可能在量子计算中有应用。然而,基于自旋的实验和逻辑应用的建议通常只使用自旋作为内部变量,每个单独逻辑门的终端数量仍然是基于电荷的。这需要反复进行自旋到电荷的转换,使用额外的硬件来抵消任何可能的优势。
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引用次数: 12
Robust path-dependent spin rotation on the nanoscale in a semiconductor quantum well 半导体量子阱中奈米尺度的鲁棒路径依赖自旋
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551850
B. J. Moehlmann, M. Flatté
Spintronics, using spin transport physics to manipulate information encoded in spin polarization, requires the ability to scalably manipulate electron spins, which is most easily achieved without magnetic materials or applied magnetic fields. Coherent spin rotation in the spin-orbit fields of a quantum well can yield efficient spin manipulation that depends only on the path traversed by a packet of electronic spin, and not on the speed with which the path is traversed. For a configuration with no applied magnetic field, where an electron spin is driven around three straight legs, with the first and last parallel, and the intermediate leg perpendicular to them and half their length, transport around the path will cause a robust, electrically controllable spin rotation. The angle of the spin rotation depends on the lengths of those legs. However, it is also possible to switch between integer π rotations of the electron spin (about a fixed axis in the plane of the quantum well) in a specific device with a fixed path by adjusting a vertical electric field applied to the quantum well. This spin rotation is described by a generalized Berry's phase and is not a dynamical effect, so it is invariant with respect to the current, source-drain voltage, travel time, and temperature (within a parabolic band approximation). The simplest realization would be a device with a narrow GaAs channel between undoped AlGaAs barriers with spin-selective injection and detection. For a ten nanometer thick GaAs/AlGaAs quantum well the long legs of the device would ideally be on the order of 10–100 nm in length, and transport should be in the drift-diffusion regime.
自旋电子学,利用自旋输运物理来操纵自旋极化中编码的信息,需要能够大规模地操纵电子自旋,这在没有磁性材料或外加磁场的情况下最容易实现。在量子阱的自旋轨道场中,相干自旋可以产生有效的自旋操纵,这种自旋操纵只取决于电子自旋包所走过的路径,而不取决于路径走过的速度。对于一个没有外加磁场的构型,电子自旋被驱动绕着三条直腿旋转,第一个和最后一个平行,中间的腿垂直于它们,长度为它们的一半,沿着路径的传输将导致一个强大的、可控制的自旋旋转。旋转的角度取决于腿的长度。然而,也可以通过调整施加在量子阱上的垂直电场,在具有固定路径的特定器件中,在电子自旋的整数π旋转(在量子阱平面上的固定轴)之间切换。这种自旋旋转是由广义的贝里相描述的,不是一个动态效应,所以它对电流、源漏电压、旅行时间和温度(在抛物线带近似内)是不变的。最简单的实现将是在未掺杂的AlGaAs势垒之间具有窄GaAs通道的器件,具有自旋选择性注入和检测。对于10纳米厚的GaAs/AlGaAs量子阱,理想情况下,器件的长腿长度应在10-100纳米量级,输运应处于漂移-扩散状态。
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引用次数: 0
Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs 新型高铝成分Al0.72Ga0.28N/AlN/GaN hemt的工作功能工程
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551983
Guowang Li, T. Zimmermann, Yu Cao, Chuanxin Lian, X. Xing, Ronghua Wang, P. Fay, H. Xing, D. Jena
Enormous progress has been made in low Al composition (<40 %) AlGaN/GaN HEMTs for high power and high frequency applications [1]. For scaling down to deep sub-micrometer dimensions, high Al composition AlGaN barrier can offer higher two-dimensional electron gas (2DEG) density and lower sheet resistance than low Al composition AlGaN [2]. Pure AlN barriers cause high contact resistance due to their wide band gap (6.2 eV) [3]. Compared to lattice-matched AlInN barriers, the higher band gap and conduction band offset of high Al composition AlGaN barrier can result in lower gate tunneling current [4]. In this work we report the device characteristics of novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs. By combining ALD technology, threshold voltage control by work-function engineering is demonstrated for the first time.
低铝成分(< 40%)AlGaN/GaN hemt在高功率和高频应用方面取得了巨大进展。对于深度亚微米尺寸,高铝含量的AlGaN势垒可以提供比低铝含量的AlGaN[2]更高的二维电子气体(2DEG)密度和更低的片电阻。纯氮化铝势垒由于其宽带隙(6.2 eV)而产生高接触电阻。与晶格匹配的AlGaN势垒相比,高铝成分AlGaN势垒的高带隙和导带偏移可以导致较低的栅隧穿电流[4]。本文报道了新型高铝成分Al0.72Ga0.28N/AlN/GaN hemt的器件特性。结合ALD技术,首次实现了工作函数工程的阈值电压控制。
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引用次数: 2
High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes 高性能e模InAlN/GaN hemt:亚阈值斜率下的界面状态
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551875
Ronghua Wang, X. Xing, T. Fang, T. Zimmermann, Chuanxin Lian, Guowang Li, P. Saunier, Xiang Gao, Shiping Guo, G. Snider, P. Fay, D. Jena, H. Xing
Due to the high two-dimensional electron gas (2DEG) concentration and high temperature stability, lattice matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) have attracted tremendous amount of interest for high-power and high-frequency electronics [1–2]. Employing the gate recess technology, a popular way to develop enhancement-mode (E-mode) devices for digital and mixed signal applications, record high performance (output current density of 2 A/mm, extrinsic transconductance of 890 mS/mm, and ft/fmax of 95/135 GHz for 150-nm gate length) have been very recently reported on E-mode InAlN HEMTs [3]. Temperature dependent characterization of the subthreshold slope (SS) can provide valuable information on the interface states and their distribution near the band edges. In this paper, we have performed the field-effect measurements on these gate-recessed E-mod InAlN HEMTs reported in Ref. 3, and extracted the interface states from the temperature dependent SS from 80 to 300 K.
由于高二维电子气体(2DEG)浓度和高温稳定性,晶格匹配的InAlN/AlN/GaN高电子迁移率晶体管(hemt)在高功率和高频电子领域引起了极大的兴趣[1-2]。采用栅极凹槽技术(一种开发用于数字和混合信号应用的增强模式(e模式)器件的流行方法),最近在e模式InAlN hemt上报道了高性能(输出电流密度为2a /mm,外部跨导为890 mS/mm,在150纳米栅极长度下ft/fmax为95/135 GHz)[3]。阈下斜率(SS)的温度依赖性表征可以提供有价值的界面状态及其在带边缘附近分布的信息。在本文中,我们对文献3中报道的这些栅极凹槽的E-mod InAlN hemt进行了场效应测量,并从温度依赖的SS中提取了80至300 K的界面态。
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引用次数: 2
Sub-micron InGaAs Esaki diodes with record high peak current density 亚微米InGaAs Esaki二极管具有创纪录的高峰值电流密度
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551888
D. Pawlik, M. Barth, P. Thomas, S. Kurinec, S. Mookerjea, D. Mohata, S. Datta, S. Cohen, D. Ritter, S. Rommel
Tunneling field effect transistors (TFET), which are gated Esaki tunnel junctions (ETD) operating in the Zener regime, have theoretically been predicted to operate with ultra low power supplies (<0.5 V) and steep subthreshold slopes (<60 mV/dec) [1, 2]. However, the majority of these projections have been made based on uncalibrated TCAD modeling. To this end, the authors experimentally demonstrate a pair of InGaAs tunnel diodes with the highest peak current densities (JP = IP/Area) ever reported for tunnel diodes (975 kA/cm2 or 9.75 mA/µm2) [3–5]. Other groups have attempted to experimentally demonstrate these structures, but were limited by a combination of output current and series resistance [6]. The key innovation in this study was a process for testing deep submicron Esaki diodes [7], which mitigates these factors.
隧道场效应晶体管(ttfet)是一种门控Esaki隧道结(ETD),工作在齐纳状态下,理论上预测它可以在超低电源(<0.5 V)和陡峭的亚阈值斜率(<60 mV/dec)下工作[1,2]。然而,这些预测大多是基于未校准的TCAD模型做出的。为此,作者通过实验展示了一对具有最高峰值电流密度(JP = IP/Area)的InGaAs隧道二极管(975 kA/cm2或9.75 mA/µm2)的隧道二极管[3-5]。其他研究小组也曾尝试通过实验证明这些结构,但受到输出电流和串联电阻组合的限制[6]。本研究的关键创新是测试深亚微米Esaki二极管的过程[7],该过程减轻了这些因素。
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引用次数: 12
Resonant body transistors 谐振体晶体管
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551901
A. Ionescu
Timing components are the heartbeat of consumer electronics as almost all electronic systems need a highly stable reference source for synchronization between its sub-systems. Over the past few decades, quartz crystals have provided highly accurate frequency references and demonstrated a continuing and sustainable presence with improved performance. On the other hand, Micro-Electro-Mechanical (MEM) resonators are micro-meter scale mechanical devices fabricated on silicon wafers with CMOS compatible processes and materials. The research on MEM resonators started in the 60's when a vibrating metal beam was proposed as the gate of a MOS transistor [1]. Pioneering work on the use of MEM resonators for frequency reference applications has been initiated in the early 90's at University of California at Berkeley and later blossomed at University of Michigan [2]. Subsequently, growing interest in wireless applications has generated tremendous technological progress in the field of radio frequency micro-electro-mechanical systems (RF MEMS) and transformed the MEM resonator technology based on IC-compatible micromachining processes and materials such as semiconductors, polysilicon or metals in a strong competitor position to the quartz crystal. Today, majority of the MEM resonators exploit the principles of capacitive excitation and detection via deep sub-micron air-gaps. However, MEM resonators with capacitively transduced signals are passive devices that show limited scaling potential in terms of impedance and signal-to-noise ratio. Inspired by the resonant gate transistor [1], vibrating or resonant body transistors (VBT or RBT) have been proposed for the first time in 2007–2008 [3–4], by embedding a field effect transistor in the body of vibrating beams, Fig. 1 with lateral gates coupled via narrow air-gaps. The resonant body transistor is an active resonator with intrinsic gain mechanisms, Fig. 2: the output of RBT is the drain current of the transistor and not the capacitive current. They have the unique advantage of enabling combined modulation of charge and piezoresistance (or mobility), which are effective at very small scale and controllable by the device design. The device small signal equivalent circuit is a hybrid between a resonator (RLC resonant circuit) and a transistor (current sources), Fig. 2a. The gain mechanisms are mirrored in the current sources depending on the transistor transconductance, which is voltage-tuneable (Fig. 3) and reaches its maximum at the resonance frequency (Fig. 2b). Absolute gain in resonant transistors is demonstrated in Fig. 4. In Fig. 5a bulk mode, piezoresistive gain resonant transistors based on multiple coupled beams shows the highest quality factor in RBTs reported to date (Q∼105) and a Q x f > 2 1012, comparable with quartz. Recently, a high frequency (>10GHz) version of the RBT, with internal dielectric transduction, has been reported in [5] showing a record Q x f higher than 1013. A 70MHz square bulk-mode
定时元件是消费电子产品的心跳,因为几乎所有的电子系统都需要一个高度稳定的参考源来实现子系统之间的同步。在过去的几十年里,石英晶体提供了高度精确的频率参考,并表现出持续和可持续的存在与改进的性能。另一方面,微机电(MEM)谐振器是采用CMOS兼容工艺和材料在硅片上制造的微米级机械器件。MEM谐振器的研究始于60年代,当时提出了一种振动金属梁作为MOS晶体管的栅极。在频率参考应用中使用MEM谐振器的开创性工作始于20世纪90年代初的加州大学伯克利分校,后来在密歇根大学bbb开花结果。随后,对无线应用的兴趣日益浓厚,在射频微机电系统(RF MEMS)领域产生了巨大的技术进步,并将基于ic兼容微加工工艺和材料(如半导体,多晶硅或金属)的memm谐振器技术转变为石英晶体的强大竞争对手。今天,大多数MEM谐振器利用电容激励和通过深亚微米气隙检测的原理。然而,具有电容转导信号的MEM谐振器是无源器件,在阻抗和信噪比方面显示出有限的缩放潜力。受谐振栅极晶体管[1]的启发,2007-2008年首次提出了振动或谐振体晶体管(VBT或RBT)[3-4],方法是在振动梁的本体中嵌入场效应晶体管,如图1所示,横向栅极通过狭窄的气隙耦合。谐振体晶体管是一个具有固有增益机制的有源谐振器,图2:RBT的输出是晶体管的漏极电流,而不是电容电流。它们具有独特的优势,可以实现电荷和压阻(或迁移率)的组合调制,这在非常小的范围内是有效的,并且可以通过器件设计进行控制。器件小信号等效电路是谐振器(RLC谐振电路)和晶体管(电流源)的混合体,如图2a所示。增益机制反映在电流源中,取决于晶体管跨导,跨导是电压可调的(图3),并在谐振频率处达到最大值(图2b)。谐振晶体管的绝对增益如图4所示。在图5a块体模式中,基于多耦合光束的压阻增益谐振晶体管显示出迄今为止报道的rbt中最高的质量因子(Q ~ 105)和qxfbbb21012,与石英相当。最近,一种高频(>10GHz)版本的RBT,具有内部介电转导,在[5]中显示出比1013高的创纪录的Q × f。图6描述了一个带有四个门的70MHz方形体模谐振器,在容性操作中表现出显著的信号增益和更低的运动电阻。
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引用次数: 4
Channel and contact length scaling in carbon nanotube transistors 碳纳米管晶体管的沟道和接触长度缩放
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551963
A. Franklin, A. Bol, Zhihong Chen
In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that Lg could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper Lg scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of Lg scaling is given, along with the first reported results of contact length scaling.
为了考虑单壁碳纳米管(SWCNTs)的未来技术,必须了解其物理缩放限制。这种缩放涉及缩小两个临界长度:1)通道长度(Lg)和2)较少强调的源/漏接触长度(CL)。直到最近,许多人都认为Lg无法在不产生严重短通道效应(SCEs)的情况下,在swcnts场效应晶体管(cntfet)中进行缩放。然而,使用改进的器件几何形状,现在已经表明,适当的Lg缩放可以实现性能的实际增强[1]。在本报告中,给出了更完整的Lg缩放图,以及接触长度缩放的首次报道结果。
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引用次数: 0
Gate control of a spin transistor via spin-orbit “focusing” of electron beams 电子束自旋轨道“聚焦”自旋晶体管的栅极控制
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551951
D. Berman, M. Flatté
Current proposals and implementations of spin field effect transistors (spin-FETs) rely on three key elements: (1) spin injection of highly spin polarized distribution into a channel, (2) gate control of the spin orientation or polarization in some fashion within the channel, and (3) sensitivity of current through a drain contact to spin polarization in the channel. Although all three of these effects have been demonstrated experimentally to some degree, elements (1) and (3) are still well below the required performance to yield a competitive device. Here we describe a new approach to gate-controlled electronic transport in a two-dimensional electron gas, which relies on gate control of the spin-orbit interaction to control the direction and focusing of “electron beams” which propagate along specific crystal axes. A major advantage of this approach is that the electron beams exist even when the propagating electrons are not spin-polarized when injected. Thus no spin-selective injection or detection is required for this device, nor any magnetic materials or applied magnetic field only gate-control of the spin-orbit interaction.
目前的自旋场效应晶体管(spin- fet)的提出和实现依赖于三个关键要素:(1)高度自旋极化分布的自旋注入到沟道中,(2)在沟道内以某种方式控制自旋方向或极化,以及(3)通过漏极接触的电流对沟道中自旋极化的灵敏度。虽然这三种效应都在某种程度上得到了实验证明,但元素(1)和(3)仍然远远低于产生竞争性器件所需的性能。本文描述了一种在二维电子气体中栅极控制电子输运的新方法,该方法依赖于自旋轨道相互作用的栅极控制来控制沿特定晶体轴传播的“电子束”的方向和聚焦。这种方法的一个主要优点是,即使在注入时传播的电子没有自旋极化,电子束也会存在。因此,该装置不需要自旋选择性注入或检测,也不需要任何磁性材料或外加磁场,只需要自旋轨道相互作用的门控。
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引用次数: 0
Low-voltage, high-mobility organic thin-film transistors with improved stability 低电压、高迁移率的有机薄膜晶体管,稳定性提高
Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551899
U. Zschieschang, Tatsuya Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, H. Klauk
Pentacene is among the most widely employed semiconductors for organic thin-film transistors (TFTs). The main reason is its large field-effect mobility (∼1 cm2/Vs) which results from the relatively large overlap of the delocalized molecular orbitals in the (001) lattice plane of the pentacene thin-film phase [1–4]. But pentacene molecules are easily oxidized at the 6 and 13 positions, and since the oxidation changes the electronic structure of the molecules, the mobility of pentacene TFTs degrades rapidly during air exposure [5,6]. Yamamoto et al. have recently synthesized a six-ring fused heteroarene, dinaphtho-[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), which has a crystal structure and thin-film morphology similar to those of pentacene, but is less susceptible to oxidation [7]. As a result of the favorable crystal structure and morphology, the mobility in DNTT is similar to that in pentacene, while the greater oxidation resistance affords better air stability of DNTT transistors compared with pentacene devices. Here we report on the static and dynamic performance and on the stability of DNTT TFTs on flexible polyethylene naphthalate (PEN) substrates.
并五苯是有机薄膜晶体管(TFTs)中应用最广泛的半导体之一。其主要原因是其较大的场效应迁移率(~ 1 cm2/Vs),这是由于并五苯薄膜相(001)晶格平面上的离域分子轨道相对较大的重叠造成的[1 - 4]。但并五苯分子在6位和13位很容易被氧化,由于氧化改变了分子的电子结构,在空气暴露过程中,并五苯tft的迁移率迅速下降[5,6]。Yamamoto等人最近合成了一种六环熔合杂芳烃dinaphtho-[2,3-b:2 ',3 ' -f]thieno[3,2-b]噻吩(DNTT),其晶体结构和薄膜形态与并五苯相似,但不易氧化[7]。由于良好的晶体结构和形貌,DNTT中的迁移率与并五烯中的迁移率相似,而与并五烯器件相比,DNTT晶体管更强的抗氧化性使其具有更好的空气稳定性。本文报道了DNTT tft在柔性聚萘二甲酸乙二醇酯(PEN)衬底上的静态和动态性能以及稳定性。
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引用次数: 11
期刊
68th Device Research Conference
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