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2012 25th International Conference on VLSI Design最新文献

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Low-Latency No-Handshake GALS Interfaces for Fast-Receiver Links 用于快速接收链路的低延迟无握手GALS接口
Pub Date : 2012-01-07 DOI: 10.1109/VLSID.2012.69
Jean-Michel Chabloz, A. Hemani
In this paper we introduce a novel interface for Globally-Asynchronous, Locally-Synchronous systems which does not use any form of handshake to cross the gap between the clock domains. In particular, links in which the Receiver runs faster than the Transmitter are targeted. The interface works by finding an approximate ratio between the clock frequencies. Then, ratiochronous synchronizers that can tolerate clock drifts are employed to transmit data from the Transmitter to the Receiver clock domain. Thanks to the periodic properties of rationally-related systems, no handshake is employed and the average latency of the interface is decreased 75 % compared to state-of-the-art GALS interfaces. Additionally, the interface uses only standard cells and, save for a delay line, can be designed at Register Transfer Level.
在本文中,我们为全局异步,本地同步系统引入了一种新的接口,它不使用任何形式的握手来跨越时钟域之间的间隙。特别是,目标是接收器运行速度比发送器快的链路。该接口的工作原理是在时钟频率之间找到一个近似的比率。然后,采用可以容忍时钟漂移的异步同步器将数据从发送端传输到接收端时钟域。由于理性相关系统的周期性特性,无需握手,与最先进的GALS接口相比,接口的平均延迟降低了75%。此外,接口只使用标准单元,除了延迟线,可以在寄存器传输级别设计。
{"title":"Low-Latency No-Handshake GALS Interfaces for Fast-Receiver Links","authors":"Jean-Michel Chabloz, A. Hemani","doi":"10.1109/VLSID.2012.69","DOIUrl":"https://doi.org/10.1109/VLSID.2012.69","url":null,"abstract":"In this paper we introduce a novel interface for Globally-Asynchronous, Locally-Synchronous systems which does not use any form of handshake to cross the gap between the clock domains. In particular, links in which the Receiver runs faster than the Transmitter are targeted. The interface works by finding an approximate ratio between the clock frequencies. Then, ratiochronous synchronizers that can tolerate clock drifts are employed to transmit data from the Transmitter to the Receiver clock domain. Thanks to the periodic properties of rationally-related systems, no handshake is employed and the average latency of the interface is decreased 75 % compared to state-of-the-art GALS interfaces. Additionally, the interface uses only standard cells and, save for a delay line, can be designed at Register Transfer Level.","PeriodicalId":405021,"journal":{"name":"2012 25th International Conference on VLSI Design","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114942175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tutorial T7B: Optimally Addressing Verification Constraint Complexity for Effective Functional Convergence 教程T7B:最优地解决有效函数收敛的验证约束复杂性
Pub Date : 2012-01-07 DOI: 10.1109/VLSID.2012.35
S. Hemmady
As SoC design becomes larger and more complex, verification engineers are expanding constrained-random testing to meet the validation demand. This expansion creates a new set of challenges: engineers now face exponentially growing verification performance and capacity issues. It is no longer enough to write constraints that simply function to validate a design. Today, engineers must also optimize the constraints they write for performance if they wish to have any hope of both successfully validating their design and meeting their deadlines. In this tutorial, we discuss a scalable methodology for writing constraints and optimizing performance is which will improve engineers' productivity to write and debug ever-increasing amounts of larger, more complex sets of constraints. Our goal is to reduce the time needed for functional convergence, and later for debug and volume manufacturing. We will also discuss the vital role of Verification IP providers and users in this scenario.
随着SoC设计变得越来越大,越来越复杂,验证工程师正在扩展约束随机测试以满足验证需求。这种扩展产生了一系列新的挑战:工程师现在面临着指数级增长的验证性能和容量问题。仅仅编写用于验证设计的约束已经不够了。今天,如果工程师希望成功地验证他们的设计并满足他们的最后期限,他们还必须优化他们为性能编写的约束。在本教程中,我们将讨论用于编写约束和优化性能的可伸缩方法,这将提高工程师的工作效率,从而编写和调试数量不断增加的更大、更复杂的约束集。我们的目标是减少功能融合所需的时间,以及以后调试和批量生产所需的时间。我们还将讨论验证IP提供者和用户在此场景中的重要作用。
{"title":"Tutorial T7B: Optimally Addressing Verification Constraint Complexity for Effective Functional Convergence","authors":"S. Hemmady","doi":"10.1109/VLSID.2012.35","DOIUrl":"https://doi.org/10.1109/VLSID.2012.35","url":null,"abstract":"As SoC design becomes larger and more complex, verification engineers are expanding constrained-random testing to meet the validation demand. This expansion creates a new set of challenges: engineers now face exponentially growing verification performance and capacity issues. It is no longer enough to write constraints that simply function to validate a design. Today, engineers must also optimize the constraints they write for performance if they wish to have any hope of both successfully validating their design and meeting their deadlines. In this tutorial, we discuss a scalable methodology for writing constraints and optimizing performance is which will improve engineers' productivity to write and debug ever-increasing amounts of larger, more complex sets of constraints. Our goal is to reduce the time needed for functional convergence, and later for debug and volume manufacturing. We will also discuss the vital role of Verification IP providers and users in this scenario.","PeriodicalId":405021,"journal":{"name":"2012 25th International Conference on VLSI Design","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121716049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tutorial T3: DFM, DFT, Silicon Debug and Diagnosis -- The Loop to Ensure Product Yield 教程T3: DFM, DFT,硅调试和诊断-确保产品良率的循环
Pub Date : 2006-01-03 DOI: 10.1109/VLSID.2006.73
D. Abercrombie, B. Koenemann, Nagesh Tamarapalli, S. Venkataraman
Semiconductor yield has traditionally been limited by random particle-defect based issues. However, as the feature sizes reduced to 90nm and below, systematic mechanism-limited yield loss began to appear as a substantial component in yield loss. In addition, it is becoming clear that ramping yield would take longer and final yields would not reach historical norms. A key factor for not reaching previously attained yield levels is the interaction between design and manufacturing. Yield losses in the newer processes include functional defects, parametric defects and issues with testing. Each of these sources of yield loss needs to be analyzed and understood by designers and tool developers. In addition, new techniques and methods must be devised to minimize the impact of these yield loss mechanisms. After an introduction of the issues involved in the first section, the second section covers Design-for- Manufacturing (DFM) techniques to analyze the design content, flag areas of design that could limit yield, and make changes to improve yield. However, once the changes are made it is necessary to quantify their impact so that knowledge about yield contribution of different features can be fed back to design and DFM tools. Test presents an opportunity to close the loop by crafting test patterns to expose the defect prone features during automatic test pattern generation (ATPG) and by analyzing silicon failures through diagnosis to determine the features that are actually causing yield loss and their relative impact. The third section covers design techniques (DFX) to improve testability, debuggability and diagnosability, and DFM and defect-aware test generation to both meet product quality and expose yield issues at test. Section four covers the basic concepts and theoretical aspects of debug and diagnosis including algorithmic IC diagnosis, scan chain diagnosis, critical path based techniques and diagnosis of delay defects. The applications of the basic concepts and techniques for silicon debug are covered in section five. Section six covers the application of statistical diagnosis techniques to determine the features that are actually causing yield loss and their relative impact. Finally, in section seven, future trends, challenges and directions are covered. The proposed tutorial includes the basics to be of interest to students, new engineers and managers but covers new and recent advances in hot topics in Design-for-Manufacturing, yield, test and diagnosis to be of interest to researchers and practicing engineers. The selection of topics cover a broad spectrum and will be of interest to a wide audience including design, test, product, validation, yield, debug and FA engineers.
半导体成品率历来受到随机粒子缺陷问题的限制。然而,随着特征尺寸减小到90nm及以下,系统机制限制的良率损失开始成为良率损失的重要组成部分。此外,越来越明显的是,提高收益率将需要更长的时间,最终收益率将达不到历史标准。没有达到以前达到的产量水平的一个关键因素是设计和制造之间的相互作用。新工艺的产量损失包括功能缺陷、参数缺陷和测试问题。设计人员和工具开发人员需要分析和理解每一种产量损失来源。此外,必须设计新的技术和方法,以尽量减少这些产量损失机制的影响。在介绍了第一部分中涉及的问题之后,第二部分将介绍为制造而设计(DFM)技术,以分析设计内容,标记可能限制产量的设计区域,并进行更改以提高产量。然而,一旦做出改变,就有必要量化它们的影响,以便将有关不同特征对产量贡献的知识反馈给设计和DFM工具。在自动测试模式生成(ATPG)期间,通过制作测试模式来暴露容易出现缺陷的特征,以及通过诊断分析硅故障来确定实际导致产量损失的特征及其相对影响,测试提供了一个关闭循环的机会。第三部分涵盖设计技术(DFX),以提高可测试性、可调试性和可诊断性,以及DFM和缺陷感知测试生成,以满足产品质量并暴露测试中的良率问题。第四部分涵盖了调试诊断的基本概念和理论方面,包括算法IC诊断、扫描链诊断、基于关键路径的技术和延迟缺陷诊断。硅调试的基本概念和技术的应用将在第五节中介绍。第六节涵盖了统计诊断技术的应用,以确定实际导致产量损失及其相对影响的特征。最后,在第七部分,未来的趋势,挑战和方向是涵盖。建议的教程包括学生,新工程师和管理人员感兴趣的基础知识,但涵盖了研究人员和实践工程师感兴趣的设计制造,产量,测试和诊断等热门话题的最新进展。主题的选择涵盖了广泛的范围,将吸引广泛的受众,包括设计、测试、产品、验证、产量、调试和FA工程师。
{"title":"Tutorial T3: DFM, DFT, Silicon Debug and Diagnosis -- The Loop to Ensure Product Yield","authors":"D. Abercrombie, B. Koenemann, Nagesh Tamarapalli, S. Venkataraman","doi":"10.1109/VLSID.2006.73","DOIUrl":"https://doi.org/10.1109/VLSID.2006.73","url":null,"abstract":"Semiconductor yield has traditionally been limited by random particle-defect based issues. However, as the feature sizes reduced to 90nm and below, systematic mechanism-limited yield loss began to appear as a substantial component in yield loss. In addition, it is becoming clear that ramping yield would take longer and final yields would not reach historical norms. A key factor for not reaching previously attained yield levels is the interaction between design and manufacturing. Yield losses in the newer processes include functional defects, parametric defects and issues with testing. Each of these sources of yield loss needs to be analyzed and understood by designers and tool developers. In addition, new techniques and methods must be devised to minimize the impact of these yield loss mechanisms. After an introduction of the issues involved in the first section, the second section covers Design-for- Manufacturing (DFM) techniques to analyze the design content, flag areas of design that could limit yield, and make changes to improve yield. However, once the changes are made it is necessary to quantify their impact so that knowledge about yield contribution of different features can be fed back to design and DFM tools. Test presents an opportunity to close the loop by crafting test patterns to expose the defect prone features during automatic test pattern generation (ATPG) and by analyzing silicon failures through diagnosis to determine the features that are actually causing yield loss and their relative impact. The third section covers design techniques (DFX) to improve testability, debuggability and diagnosability, and DFM and defect-aware test generation to both meet product quality and expose yield issues at test. Section four covers the basic concepts and theoretical aspects of debug and diagnosis including algorithmic IC diagnosis, scan chain diagnosis, critical path based techniques and diagnosis of delay defects. The applications of the basic concepts and techniques for silicon debug are covered in section five. Section six covers the application of statistical diagnosis techniques to determine the features that are actually causing yield loss and their relative impact. Finally, in section seven, future trends, challenges and directions are covered. The proposed tutorial includes the basics to be of interest to students, new engineers and managers but covers new and recent advances in hot topics in Design-for-Manufacturing, yield, test and diagnosis to be of interest to researchers and practicing engineers. The selection of topics cover a broad spectrum and will be of interest to a wide audience including design, test, product, validation, yield, debug and FA engineers.","PeriodicalId":405021,"journal":{"name":"2012 25th International Conference on VLSI Design","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115288487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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2012 25th International Conference on VLSI Design
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