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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics最新文献

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High voltage automotive interface design, in a VLSI compatible BiCmos technology 高压汽车接口设计,采用VLSI兼容的BiCmos技术
M. Corsi, F. Fattori
With the increased levels of sophistication now being seen in modern cars, many auto manufacturers are investigating means by which they can reduce the complexity of the wiring harness in the average car. In order to achieve this they are developing interface standards to survive in the harsh automotive environment. In this paper we will talk about the design of an interface chip conforming to the VAN standard.
随着现代汽车的复杂程度的提高,许多汽车制造商正在研究降低普通汽车线束复杂性的方法。为了实现这一目标,他们正在开发接口标准,以便在恶劣的汽车环境中生存。本文将讨论一种符合VAN标准的接口芯片的设计。
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引用次数: 1
Accurate Simulation Of Combined Electron And Ion Irradiated Silicon Devices For Local Lifetime Tailoring 用于局部寿命定制的电子和离子复合辐照硅器件的精确模拟
J. Vobeckj, P. Hazdra, J. Voves, F. Spurnj
Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority camer lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary.
对功率器件进行离子和电子辐照已成为一种广泛应用的方法,以局部缩短少数器件的寿命。为了高效、准确地设计辐照参数,如离子类型、辐照能量和剂量、退火温度等,考虑充分表征的深能级的器件模拟和求解阱动力学方程的完整解是必要的。
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引用次数: 0
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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics
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