Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583749
G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner
Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.
{"title":"Two-dimensional dopant profile characterization for MCT and IGBT structures","authors":"G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner","doi":"10.1109/ISPSD.1994.583749","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583749","url":null,"abstract":"Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISPSD.1994.584286
J. Vobeckj, P. Hazdra, J. Voves, F. Spurnj
Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority camer lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary.
{"title":"Accurate Simulation Of Combined Electron And Ion Irradiated Silicon Devices For Local Lifetime Tailoring","authors":"J. Vobeckj, P. Hazdra, J. Voves, F. Spurnj","doi":"10.1109/ISPSD.1994.584286","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.584286","url":null,"abstract":"Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority camer lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123281802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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