Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583735
V. Chelnokov, A. M. Strel’chuk, P. Ivanov, G. Lentz, C. Parniere
We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide.
我们考虑了基于宽禁带半导体6h -碳化硅设计大功率高压整流器的理论和实践方面。
{"title":"Silicon carbide p-n structures as power rectifiers","authors":"V. Chelnokov, A. M. Strel’chuk, P. Ivanov, G. Lentz, C. Parniere","doi":"10.1109/ISPSD.1994.583735","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583735","url":null,"abstract":"We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126720606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583759
K. Nonaka, Y. Ishikawa, S. Yokoyama, M. Abe, T. Kamiyama
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm/sup 2/.
研制了一种新型550 V AlGaAs/GaAs异质源双极型静态感应晶体管(HBSIT)。GaAs HBSIT被认为在导态特性上优于传统的硅功率器件。例如，当电流增益为150，漏极电流密度为100 A/cm/sup /时，正向压降为0.3 V。
{"title":"An AlGaAs/GaAs hetero source bipolar mode static induction transistor (HBSIT) with low forward voltage drop and high current gain","authors":"K. Nonaka, Y. Ishikawa, S. Yokoyama, M. Abe, T. Kamiyama","doi":"10.1109/ISPSD.1994.583759","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583759","url":null,"abstract":"A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm/sup 2/.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130421317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583723
F. Bauer, T. Stockmeier, H. Dettmer, H. Lendenmann, W. Fichtner
After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed.
{"title":"On the suitability of BiMOS high power devices in intelligent, snubberless power conditioning circuits","authors":"F. Bauer, T. Stockmeier, H. Dettmer, H. Lendenmann, W. Fichtner","doi":"10.1109/ISPSD.1994.583723","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583723","url":null,"abstract":"After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130470693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583680
R.K. Williams, M. S. Shekar
The physics of substrate hole injection during forward biasing of the P-body to N-epi antiparallel diode in integrated N-channel DMOS is explored. The N+ source region is shown to reduce the effective beta of the parasitic substrate PNP by collecting back injected electrons in the P-body region. By shunting the main anode current, the parasitic NPN provides a 1.5 to 2/spl times/ reduction in substrate hole collection. Conductivity modulation of the N-epi drain region is found to maintain the beneficial effects of this NPN through compensating improvements in the emitter injection efficiency at high anode currents. Recombination in the P+ region is shown to be negligible except at high bias conditions.
{"title":"The influence of the N+ source region on parasitic PNP conduction in integrated N-Channel DMOS","authors":"R.K. Williams, M. S. Shekar","doi":"10.1109/ISPSD.1994.583680","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583680","url":null,"abstract":"The physics of substrate hole injection during forward biasing of the P-body to N-epi antiparallel diode in integrated N-channel DMOS is explored. The N+ source region is shown to reduce the effective beta of the parasitic substrate PNP by collecting back injected electrons in the P-body region. By shunting the main anode current, the parasitic NPN provides a 1.5 to 2/spl times/ reduction in substrate hole collection. Conductivity modulation of the N-epi drain region is found to maintain the beneficial effects of this NPN through compensating improvements in the emitter injection efficiency at high anode currents. Recombination in the P+ region is shown to be negligible except at high bias conditions.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128468944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583684
K. Shenai, D. Hodge, M. Feuer, J. Cunningham
This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.
{"title":"Novel ultralow R/sub on/ MBE GaAs MESFET's for high-frequency high-temperature switched-mode power converter applications","authors":"K. Shenai, D. Hodge, M. Feuer, J. Cunningham","doi":"10.1109/ISPSD.1994.583684","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583684","url":null,"abstract":"This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122655132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583792
K. Endo, Y. Baba, Y. Udo, M. Yasui, Y. Sano
A 500 V 1 A three-phase inverter IC has been developed by using a new electric field reduction structure SRFP (Scroll shaped Resistive-Field-Plate). This HV-IC process is a BiCMOS process with a dielectric isolated (DI) wafer. Si wafer direct bonding (SDB) technique is applied to the DI wafer. Output devices are lateral IGBTs with high-speed collector structures. Without SIPOS, an SRFP has the same field reduction effect and the same electric shield effect as a SIPOS-RFP. In this report, we show that turn off time of IGBT depends on N/sup +/ pattern in the collector and existence of P/sup +/ layer around the DI area. High-speed (280 nsec) and low saturation (2.8 V) voltage IGBTs are realized by using optimization of collector pattern.
{"title":"A 500 V 1A 1-chip inverter IC with a new electric field reduction structure","authors":"K. Endo, Y. Baba, Y. Udo, M. Yasui, Y. Sano","doi":"10.1109/ISPSD.1994.583792","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583792","url":null,"abstract":"A 500 V 1 A three-phase inverter IC has been developed by using a new electric field reduction structure SRFP (Scroll shaped Resistive-Field-Plate). This HV-IC process is a BiCMOS process with a dielectric isolated (DI) wafer. Si wafer direct bonding (SDB) technique is applied to the DI wafer. Output devices are lateral IGBTs with high-speed collector structures. Without SIPOS, an SRFP has the same field reduction effect and the same electric shield effect as a SIPOS-RFP. In this report, we show that turn off time of IGBT depends on N/sup +/ pattern in the collector and existence of P/sup +/ layer around the DI area. High-speed (280 nsec) and low saturation (2.8 V) voltage IGBTs are realized by using optimization of collector pattern.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583658
A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor
The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.
{"title":"Comparative investigation on power losses in soft-switching insulated gate devices","authors":"A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor","doi":"10.1109/ISPSD.1994.583658","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583658","url":null,"abstract":"The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126378437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583744
A. Bhalla, T. Chow
The performance of bipolar devices fabricated using Si, Ge, 3C-SiC, 6H-SiC and Diamond is theoretically examined as a function of designed breakdown voltage, operating current density and carrier lifetime using analytic models. It is shown that wide bandgap materials become advantageous for high blocking voltages, where the use of Si is precluded by its large forward drop. Wide bandgap materials may be used to simultaneously achieve high off-state blocking and fast turn-off capability by using low lifetimes, with minor penalties on their forward performance.
{"title":"Bipolar power device performance: dependence on materials, lifetime and device ratings","authors":"A. Bhalla, T. Chow","doi":"10.1109/ISPSD.1994.583744","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583744","url":null,"abstract":"The performance of bipolar devices fabricated using Si, Ge, 3C-SiC, 6H-SiC and Diamond is theoretically examined as a function of designed breakdown voltage, operating current density and carrier lifetime using analytic models. It is shown that wide bandgap materials become advantageous for high blocking voltages, where the use of Si is precluded by its large forward drop. Wide bandgap materials may be used to simultaneously achieve high off-state blocking and fast turn-off capability by using low lifetimes, with minor penalties on their forward performance.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125066084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583728
A. V. Gorbatyuk, P. Rodin
The destructive phenomena caused by the so called Turing's instability (periodic in space) is illustrated for the case of GTO switching-off process. Using the simplified 3D analytical approach it is shown that this instability can emerge when the whole system still remains in the state with the positive differential resistance but the differential resistance of its active "hidden" part yet becomes negative. The suggested model explains satisfactorily the experiments on spatially periodic destruction of GTO and predicts the same type of failure behavior for other thyristor-like devices.
{"title":"Turing's instability as a failure mechanism of GTOs","authors":"A. V. Gorbatyuk, P. Rodin","doi":"10.1109/ISPSD.1994.583728","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583728","url":null,"abstract":"The destructive phenomena caused by the so called Turing's instability (periodic in space) is illustrated for the case of GTO switching-off process. Using the simplified 3D analytical approach it is shown that this instability can emerge when the whole system still remains in the state with the positive differential resistance but the differential resistance of its active \"hidden\" part yet becomes negative. The suggested model explains satisfactorily the experiments on spatially periodic destruction of GTO and predicts the same type of failure behavior for other thyristor-like devices.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131515744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583642
J. Yamashita, E. Haruguchi, H. Hagino
An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.
{"title":"A study on the IGBT's turn-off failure and inhomogeneous operation","authors":"J. Yamashita, E. Haruguchi, H. Hagino","doi":"10.1109/ISPSD.1994.583642","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583642","url":null,"abstract":"An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124630780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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