Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583723
F. Bauer, T. Stockmeier, H. Dettmer, H. Lendenmann, W. Fichtner
After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed.
{"title":"On the suitability of BiMOS high power devices in intelligent, snubberless power conditioning circuits","authors":"F. Bauer, T. Stockmeier, H. Dettmer, H. Lendenmann, W. Fichtner","doi":"10.1109/ISPSD.1994.583723","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583723","url":null,"abstract":"After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130470693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583660
K. Reinmuth, H. Stut, L. Lorenz, S. Konrad
A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V. Special detailed consideration is given to the continuous protection concept, comprising overvoltage, overload, short circuit, temperature and undervoltage protection, and the drive concept for the relevant frequency range of the IGBTs up to 20 kHz.
{"title":"Intelligent power modules for driving systems [IGBTs]","authors":"K. Reinmuth, H. Stut, L. Lorenz, S. Konrad","doi":"10.1109/ISPSD.1994.583660","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583660","url":null,"abstract":"A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V. Special detailed consideration is given to the continuous protection concept, comprising overvoltage, overload, short circuit, temperature and undervoltage protection, and the drive concept for the relevant frequency range of the IGBTs up to 20 kHz.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126408857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583735
V. Chelnokov, A. M. Strel’chuk, P. Ivanov, G. Lentz, C. Parniere
We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide.
我们考虑了基于宽禁带半导体6h -碳化硅设计大功率高压整流器的理论和实践方面。
{"title":"Silicon carbide p-n structures as power rectifiers","authors":"V. Chelnokov, A. M. Strel’chuk, P. Ivanov, G. Lentz, C. Parniere","doi":"10.1109/ISPSD.1994.583735","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583735","url":null,"abstract":"We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126720606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583725
E. Herr, H. Baltes, U. Thiemann, T. Stockmeier
We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipitation behavior of heavy metal contaminants. Using neutron activation analysis (NAA), we determined Fe and Ni concentration levels that weaken the gate oxides of BiMOS devices on FZ silicon. We compared the effect of various external gettering techniques on the gate oxide integrity. External gettering by polysilicon layers and by argon implantation damage were employed on the wafer back to improve the gate oxide integrity of BiMOS devices fabricated on FZ material.
{"title":"Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities","authors":"E. Herr, H. Baltes, U. Thiemann, T. Stockmeier","doi":"10.1109/ISPSD.1994.583725","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583725","url":null,"abstract":"We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipitation behavior of heavy metal contaminants. Using neutron activation analysis (NAA), we determined Fe and Ni concentration levels that weaken the gate oxides of BiMOS devices on FZ silicon. We compared the effect of various external gettering techniques on the gate oxide integrity. External gettering by polysilicon layers and by argon implantation damage were employed on the wafer back to improve the gate oxide integrity of BiMOS devices fabricated on FZ material.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"319 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114567246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583684
K. Shenai, D. Hodge, M. Feuer, J. Cunningham
This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.
{"title":"Novel ultralow R/sub on/ MBE GaAs MESFET's for high-frequency high-temperature switched-mode power converter applications","authors":"K. Shenai, D. Hodge, M. Feuer, J. Cunningham","doi":"10.1109/ISPSD.1994.583684","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583684","url":null,"abstract":"This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122655132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583792
K. Endo, Y. Baba, Y. Udo, M. Yasui, Y. Sano
A 500 V 1 A three-phase inverter IC has been developed by using a new electric field reduction structure SRFP (Scroll shaped Resistive-Field-Plate). This HV-IC process is a BiCMOS process with a dielectric isolated (DI) wafer. Si wafer direct bonding (SDB) technique is applied to the DI wafer. Output devices are lateral IGBTs with high-speed collector structures. Without SIPOS, an SRFP has the same field reduction effect and the same electric shield effect as a SIPOS-RFP. In this report, we show that turn off time of IGBT depends on N/sup +/ pattern in the collector and existence of P/sup +/ layer around the DI area. High-speed (280 nsec) and low saturation (2.8 V) voltage IGBTs are realized by using optimization of collector pattern.
{"title":"A 500 V 1A 1-chip inverter IC with a new electric field reduction structure","authors":"K. Endo, Y. Baba, Y. Udo, M. Yasui, Y. Sano","doi":"10.1109/ISPSD.1994.583792","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583792","url":null,"abstract":"A 500 V 1 A three-phase inverter IC has been developed by using a new electric field reduction structure SRFP (Scroll shaped Resistive-Field-Plate). This HV-IC process is a BiCMOS process with a dielectric isolated (DI) wafer. Si wafer direct bonding (SDB) technique is applied to the DI wafer. Output devices are lateral IGBTs with high-speed collector structures. Without SIPOS, an SRFP has the same field reduction effect and the same electric shield effect as a SIPOS-RFP. In this report, we show that turn off time of IGBT depends on N/sup +/ pattern in the collector and existence of P/sup +/ layer around the DI area. High-speed (280 nsec) and low saturation (2.8 V) voltage IGBTs are realized by using optimization of collector pattern.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583658
A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor
The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.
{"title":"Comparative investigation on power losses in soft-switching insulated gate devices","authors":"A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor","doi":"10.1109/ISPSD.1994.583658","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583658","url":null,"abstract":"The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126378437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583744
A. Bhalla, T. Chow
The performance of bipolar devices fabricated using Si, Ge, 3C-SiC, 6H-SiC and Diamond is theoretically examined as a function of designed breakdown voltage, operating current density and carrier lifetime using analytic models. It is shown that wide bandgap materials become advantageous for high blocking voltages, where the use of Si is precluded by its large forward drop. Wide bandgap materials may be used to simultaneously achieve high off-state blocking and fast turn-off capability by using low lifetimes, with minor penalties on their forward performance.
{"title":"Bipolar power device performance: dependence on materials, lifetime and device ratings","authors":"A. Bhalla, T. Chow","doi":"10.1109/ISPSD.1994.583744","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583744","url":null,"abstract":"The performance of bipolar devices fabricated using Si, Ge, 3C-SiC, 6H-SiC and Diamond is theoretically examined as a function of designed breakdown voltage, operating current density and carrier lifetime using analytic models. It is shown that wide bandgap materials become advantageous for high blocking voltages, where the use of Si is precluded by its large forward drop. Wide bandgap materials may be used to simultaneously achieve high off-state blocking and fast turn-off capability by using low lifetimes, with minor penalties on their forward performance.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125066084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583728
A. V. Gorbatyuk, P. Rodin
The destructive phenomena caused by the so called Turing's instability (periodic in space) is illustrated for the case of GTO switching-off process. Using the simplified 3D analytical approach it is shown that this instability can emerge when the whole system still remains in the state with the positive differential resistance but the differential resistance of its active "hidden" part yet becomes negative. The suggested model explains satisfactorily the experiments on spatially periodic destruction of GTO and predicts the same type of failure behavior for other thyristor-like devices.
{"title":"Turing's instability as a failure mechanism of GTOs","authors":"A. V. Gorbatyuk, P. Rodin","doi":"10.1109/ISPSD.1994.583728","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583728","url":null,"abstract":"The destructive phenomena caused by the so called Turing's instability (periodic in space) is illustrated for the case of GTO switching-off process. Using the simplified 3D analytical approach it is shown that this instability can emerge when the whole system still remains in the state with the positive differential resistance but the differential resistance of its active \"hidden\" part yet becomes negative. The suggested model explains satisfactorily the experiments on spatially periodic destruction of GTO and predicts the same type of failure behavior for other thyristor-like devices.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131515744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583642
J. Yamashita, E. Haruguchi, H. Hagino
An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.
{"title":"A study on the IGBT's turn-off failure and inhomogeneous operation","authors":"J. Yamashita, E. Haruguchi, H. Hagino","doi":"10.1109/ISPSD.1994.583642","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583642","url":null,"abstract":"An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124630780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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