Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583733
R. Singh, B. J. Baliga
The results of detailed measurements, simulations and modeling on 500 V, 4 Amps NPN BJTs are reported in the 300-77 K temperature range. For these devices, as the operating temperature is reduced from 300 to 77 K, the current gain has been found to decrease by more than an order of magnitude; the on-state collector-emitter and base-emitter voltages increase by 40 and 80% respectively; although the collector-base breakdown decreases by about 20%, the collector-emitter breakdown increases by about 20%, and the storage and fall times reduce by 10/spl times/ and 6/spl times/, respectively. Through numerical simulations it is shown that the emitter current crowding is much more severe at 77 K than at 300 K. Using verified analytical models and established optimization techniques, it is shown that a 77 K optimally designed BJT has a lower emitter, base and collector dopings and a larger emitter area than a similarly rated 300 K optimized device.
{"title":"Cryogenic operation of power bipolar transistors","authors":"R. Singh, B. J. Baliga","doi":"10.1109/ISPSD.1994.583733","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583733","url":null,"abstract":"The results of detailed measurements, simulations and modeling on 500 V, 4 Amps NPN BJTs are reported in the 300-77 K temperature range. For these devices, as the operating temperature is reduced from 300 to 77 K, the current gain has been found to decrease by more than an order of magnitude; the on-state collector-emitter and base-emitter voltages increase by 40 and 80% respectively; although the collector-base breakdown decreases by about 20%, the collector-emitter breakdown increases by about 20%, and the storage and fall times reduce by 10/spl times/ and 6/spl times/, respectively. Through numerical simulations it is shown that the emitter current crowding is much more severe at 77 K than at 300 K. Using verified analytical models and established optimization techniques, it is shown that a 77 K optimally designed BJT has a lower emitter, base and collector dopings and a larger emitter area than a similarly rated 300 K optimized device.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125541641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583654
Z. Shen, K. So, T. P. Chow
Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.
针对600 V n通道igbt，研究了三种集成电流传感器，即有源、双极和MOS传感器。本文首次对用于垂直igbt的MOS电流传感器进行了实验验证。基于建模和实验结果，对比研究了三种器件结构的线性度、热稳定性和动态响应等电流传感特性。讨论了器件的基本物理原理，为IGBT集成电流传感器的设计提供了指导。
{"title":"Comparative study of integrated current sensors in n-channel IGBTs","authors":"Z. Shen, K. So, T. P. Chow","doi":"10.1109/ISPSD.1994.583654","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583654","url":null,"abstract":"Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"305 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120982721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583634
Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai
A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.
{"title":"A new IGBT with a monolithic over-current protection circuit","authors":"Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai","doi":"10.1109/ISPSD.1994.583634","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583634","url":null,"abstract":"A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116539023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583804
T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki
This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.
{"title":"Thin SOI IGBT leakage current and a new device structure for high temperature operation","authors":"T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki","doi":"10.1109/ISPSD.1994.583804","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583804","url":null,"abstract":"This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131108936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583755
G. Calí, G. Palmisano, G. Palumbo
A current limiter is proposed which uses a compensation circuit providing an accurate stability without requiring a large compensation capacitor. Indeed thanks to the use of an enhanced Miller effect an equivalent 4-nF compensation capacitor was achieved while using only a 100-pF capacitor and a low-area single-stage amplifier.
{"title":"Design of current limiter for a smart power IC","authors":"G. Calí, G. Palmisano, G. Palumbo","doi":"10.1109/ISPSD.1994.583755","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583755","url":null,"abstract":"A current limiter is proposed which uses a compensation circuit providing an accurate stability without requiring a large compensation capacitor. Indeed thanks to the use of an enhanced Miller effect an equivalent 4-nF compensation capacitor was achieved while using only a 100-pF capacitor and a low-area single-stage amplifier.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133678607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583676
B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.
{"title":"Modeling of LDMOS and LIGBT structures at high temperatures","authors":"B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin","doi":"10.1109/ISPSD.1994.583676","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583676","url":null,"abstract":"Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583629
S. Anderson, K. Berringer, G. Romero
Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.
{"title":"Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design","authors":"S. Anderson, K. Berringer, G. Romero","doi":"10.1109/ISPSD.1994.583629","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583629","url":null,"abstract":"Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115222770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583662
S. Lefebvre, F. Forest, F. Calmon, J. Chante
This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.
{"title":"Turn-off analysis of the IGBT used in ZCS mode","authors":"S. Lefebvre, F. Forest, F. Calmon, J. Chante","doi":"10.1109/ISPSD.1994.583662","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583662","url":null,"abstract":"This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121321583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583680
R.K. Williams, M. S. Shekar
The physics of substrate hole injection during forward biasing of the P-body to N-epi antiparallel diode in integrated N-channel DMOS is explored. The N+ source region is shown to reduce the effective beta of the parasitic substrate PNP by collecting back injected electrons in the P-body region. By shunting the main anode current, the parasitic NPN provides a 1.5 to 2/spl times/ reduction in substrate hole collection. Conductivity modulation of the N-epi drain region is found to maintain the beneficial effects of this NPN through compensating improvements in the emitter injection efficiency at high anode currents. Recombination in the P+ region is shown to be negligible except at high bias conditions.
{"title":"The influence of the N+ source region on parasitic PNP conduction in integrated N-Channel DMOS","authors":"R.K. Williams, M. S. Shekar","doi":"10.1109/ISPSD.1994.583680","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583680","url":null,"abstract":"The physics of substrate hole injection during forward biasing of the P-body to N-epi antiparallel diode in integrated N-channel DMOS is explored. The N+ source region is shown to reduce the effective beta of the parasitic substrate PNP by collecting back injected electrons in the P-body region. By shunting the main anode current, the parasitic NPN provides a 1.5 to 2/spl times/ reduction in substrate hole collection. Conductivity modulation of the N-epi drain region is found to maintain the beneficial effects of this NPN through compensating improvements in the emitter injection efficiency at high anode currents. Recombination in the P+ region is shown to be negligible except at high bias conditions.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128468944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583759
K. Nonaka, Y. Ishikawa, S. Yokoyama, M. Abe, T. Kamiyama
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm/sup 2/.
研制了一种新型550 V AlGaAs/GaAs异质源双极型静态感应晶体管(HBSIT)。GaAs HBSIT被认为在导态特性上优于传统的硅功率器件。例如，当电流增益为150，漏极电流密度为100 A/cm/sup /时，正向压降为0.3 V。
{"title":"An AlGaAs/GaAs hetero source bipolar mode static induction transistor (HBSIT) with low forward voltage drop and high current gain","authors":"K. Nonaka, Y. Ishikawa, S. Yokoyama, M. Abe, T. Kamiyama","doi":"10.1109/ISPSD.1994.583759","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583759","url":null,"abstract":"A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm/sup 2/.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130421317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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