Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583654
Z. Shen, K. So, T. P. Chow
Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.
针对600 V n通道igbt，研究了三种集成电流传感器，即有源、双极和MOS传感器。本文首次对用于垂直igbt的MOS电流传感器进行了实验验证。基于建模和实验结果，对比研究了三种器件结构的线性度、热稳定性和动态响应等电流传感特性。讨论了器件的基本物理原理，为IGBT集成电流传感器的设计提供了指导。
{"title":"Comparative study of integrated current sensors in n-channel IGBTs","authors":"Z. Shen, K. So, T. P. Chow","doi":"10.1109/ISPSD.1994.583654","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583654","url":null,"abstract":"Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120982721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583634
Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai
A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.
{"title":"A new IGBT with a monolithic over-current protection circuit","authors":"Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai","doi":"10.1109/ISPSD.1994.583634","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583634","url":null,"abstract":"A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116539023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583804
T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki
This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.
{"title":"Thin SOI IGBT leakage current and a new device structure for high temperature operation","authors":"T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki","doi":"10.1109/ISPSD.1994.583804","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583804","url":null,"abstract":"This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131108936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583755
G. Calí, G. Palmisano, G. Palumbo
A current limiter is proposed which uses a compensation circuit providing an accurate stability without requiring a large compensation capacitor. Indeed thanks to the use of an enhanced Miller effect an equivalent 4-nF compensation capacitor was achieved while using only a 100-pF capacitor and a low-area single-stage amplifier.
{"title":"Design of current limiter for a smart power IC","authors":"G. Calí, G. Palmisano, G. Palumbo","doi":"10.1109/ISPSD.1994.583755","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583755","url":null,"abstract":"A current limiter is proposed which uses a compensation circuit providing an accurate stability without requiring a large compensation capacitor. Indeed thanks to the use of an enhanced Miller effect an equivalent 4-nF compensation capacitor was achieved while using only a 100-pF capacitor and a low-area single-stage amplifier.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133678607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583676
B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.
{"title":"Modeling of LDMOS and LIGBT structures at high temperatures","authors":"B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin","doi":"10.1109/ISPSD.1994.583676","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583676","url":null,"abstract":"Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583686
H. Thomas, J.K. Luo, D. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn
An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, V/sub BD/, for MISFETs is as high as 40-50 V for 2 /spl mu/m spacing between the gate and drain contacts, and is independent of the doping-thickness product. V/sub BD/ also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs.
{"title":"Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator","authors":"H. Thomas, J.K. Luo, D. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn","doi":"10.1109/ISPSD.1994.583686","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583686","url":null,"abstract":"An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, V/sub BD/, for MISFETs is as high as 40-50 V for 2 /spl mu/m spacing between the gate and drain contacts, and is independent of the doping-thickness product. V/sub BD/ also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115381328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583629
S. Anderson, K. Berringer, G. Romero
Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.
{"title":"Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design","authors":"S. Anderson, K. Berringer, G. Romero","doi":"10.1109/ISPSD.1994.583629","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583629","url":null,"abstract":"Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115222770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583725
E. Herr, H. Baltes, U. Thiemann, T. Stockmeier
We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipitation behavior of heavy metal contaminants. Using neutron activation analysis (NAA), we determined Fe and Ni concentration levels that weaken the gate oxides of BiMOS devices on FZ silicon. We compared the effect of various external gettering techniques on the gate oxide integrity. External gettering by polysilicon layers and by argon implantation damage were employed on the wafer back to improve the gate oxide integrity of BiMOS devices fabricated on FZ material.
{"title":"Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities","authors":"E. Herr, H. Baltes, U. Thiemann, T. Stockmeier","doi":"10.1109/ISPSD.1994.583725","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583725","url":null,"abstract":"We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipitation behavior of heavy metal contaminants. Using neutron activation analysis (NAA), we determined Fe and Ni concentration levels that weaken the gate oxides of BiMOS devices on FZ silicon. We compared the effect of various external gettering techniques on the gate oxide integrity. External gettering by polysilicon layers and by argon implantation damage were employed on the wafer back to improve the gate oxide integrity of BiMOS devices fabricated on FZ material.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114567246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583660
K. Reinmuth, H. Stut, L. Lorenz, S. Konrad
A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V. Special detailed consideration is given to the continuous protection concept, comprising overvoltage, overload, short circuit, temperature and undervoltage protection, and the drive concept for the relevant frequency range of the IGBTs up to 20 kHz.
{"title":"Intelligent power modules for driving systems [IGBTs]","authors":"K. Reinmuth, H. Stut, L. Lorenz, S. Konrad","doi":"10.1109/ISPSD.1994.583660","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583660","url":null,"abstract":"A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V. Special detailed consideration is given to the continuous protection concept, comprising overvoltage, overload, short circuit, temperature and undervoltage protection, and the drive concept for the relevant frequency range of the IGBTs up to 20 kHz.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126408857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-05-31DOI: 10.1109/ISPSD.1994.583662
S. Lefebvre, F. Forest, F. Calmon, J. Chante
This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.
{"title":"Turn-off analysis of the IGBT used in ZCS mode","authors":"S. Lefebvre, F. Forest, F. Calmon, J. Chante","doi":"10.1109/ISPSD.1994.583662","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583662","url":null,"abstract":"This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121321583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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