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Laser-Plasma Source Development for Projection X-ray Lithography 投影x射线光刻用激光等离子体光源的研制
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.mc3
P. Rockett, J. Hunter, R. Olson, G. Kubiak, K. Berger, H. Shields, M. Powers
A Sandia/AT&T team is utilizing optics coated for reflection at 14 nm for projection x-ray lithography. An excimer laser-plasma source of XUV radiation has provided illumination for this work, demonstrating the viability of a laser-plasma x-ray source for ultra-large scale integration. The issues of designing such a source for projection lithography are distinct from synchrotron sources and require understanding the UV to XUV conversion process, mitigating debris from the laser-target, and establishing long-term reliability. We are approaching these problems in parallel by studying the conversion process in solid and thin-film targets, by designing an advanced tape drive as a long-lasting low-mass laser-target, and by choosing to work with excimer lasers as off-the-shelf industrial components.
桑迪亚和美国电话电报公司的一个研究小组正在利用14纳米反射的光学涂层进行投影x射线光刻。准分子激光等离子体XUV辐射源为这项工作提供了照明,证明了激光等离子体x射线源用于超大规模集成的可行性。设计这种投影光刻光源的问题与同步加速器光源不同,需要了解UV到XUV的转换过程,减少激光目标的碎片,并建立长期的可靠性。我们正在通过研究固体和薄膜靶的转换过程,通过设计一种先进的磁带驱动器作为持久的低质量激光靶,以及通过选择准分子激光器作为现成的工业部件来解决这些问题。
{"title":"Laser-Plasma Source Development for Projection X-ray Lithography","authors":"P. Rockett, J. Hunter, R. Olson, G. Kubiak, K. Berger, H. Shields, M. Powers","doi":"10.1364/sxray.1992.mc3","DOIUrl":"https://doi.org/10.1364/sxray.1992.mc3","url":null,"abstract":"A Sandia/AT&T team is utilizing optics coated for reflection at 14 nm for projection x-ray lithography. An excimer laser-plasma source of XUV radiation has provided illumination for this work, demonstrating the viability of a laser-plasma x-ray source for ultra-large scale integration. The issues of designing such a source for projection lithography are distinct from synchrotron sources and require understanding the UV to XUV conversion process, mitigating debris from the laser-target, and establishing long-term reliability. We are approaching these problems in parallel by studying the conversion process in solid and thin-film targets, by designing an advanced tape drive as a long-lasting low-mass laser-target, and by choosing to work with excimer lasers as off-the-shelf industrial components.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130847125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Distortion and Damage of Mo-Si Multilayer Reflective Coatings with High Intensity UV Radiation 高强度紫外辐射下Mo-Si多层反射涂层的畸变与损伤研究
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.tub7
H. Bender, W. Silfvast, K. Beck
We report on studies of optical distortion and damage thresholds of Mo-Si multilayer soft x-ray reflective coatings using 308 nm pulsed radiation from a XeCl excimer laser to simulate soft x-ray irradiation. Preliminary experimental results yielded values of 260 mJ/cm2 and 500 mJ/cm2 for distortion and damage thresholds.
本文报道了利用XeCl准分子激光308 nm脉冲辐射模拟软x射线辐照,研究了Mo-Si多层软x射线反射涂层的光学畸变和损伤阈值。初步实验结果显示,变形和损伤阈值分别为260 mJ/cm2和500 mJ/cm2。
{"title":"Investigation of Distortion and Damage of Mo-Si Multilayer Reflective Coatings with High Intensity UV Radiation","authors":"H. Bender, W. Silfvast, K. Beck","doi":"10.1364/sxray.1992.tub7","DOIUrl":"https://doi.org/10.1364/sxray.1992.tub7","url":null,"abstract":"We report on studies of optical distortion and damage thresholds of Mo-Si multilayer soft x-ray reflective coatings using 308 nm pulsed radiation from a XeCl excimer laser to simulate soft x-ray irradiation. Preliminary experimental results yielded values of 260 mJ/cm2 and 500 mJ/cm2 for distortion and damage thresholds.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127363555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large-Area, High-Resolution Pattern Replication using a Two- Aspherical-Mirror System 使用双非球面反射镜系统的大面积、高分辨率图案复制
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.wa2
H. Kinoshita, K. Kurihara, Tutomu Mizota, Tuneyuki Haga
The ability to replicate 0.1 μm patterns using multilayer reduction optics has already been demonstrated1),. However, if we are to exploit this technology for practical lithography of VLSI devices, the problems of large exposure area and high throughput must be solved.
利用多层还原光学复制0.1 μm图案的能力已经得到证实。然而,如果我们要将该技术应用于VLSI器件的实际光刻,则必须解决大曝光面积和高吞吐量的问题。
{"title":"Large-Area, High-Resolution Pattern Replication using a Two- Aspherical-Mirror System","authors":"H. Kinoshita, K. Kurihara, Tutomu Mizota, Tuneyuki Haga","doi":"10.1364/sxray.1992.wa2","DOIUrl":"https://doi.org/10.1364/sxray.1992.wa2","url":null,"abstract":"The ability to replicate 0.1 μm patterns using multilayer reduction optics has already been demonstrated1),. However, if we are to exploit this technology for practical lithography of VLSI devices, the problems of large exposure area and high throughput must be solved.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121835822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The State of Soft X-ray Projection Lithography in Japan 日本软x射线投影光刻技术现状
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.ma4
S. Ogura
Soft X-ray projection type Lithography has been expected to be most atractive technology in future electronics device production, paticularly since the realization of normal incidence soft x-ray mirror [1]. For instance, Kinoshita et al [2] and other groups [3,4] have already shown the feasibility of this technology, adopting a Schwartzschild optical system composed of normal mirrors. If neglecting process speed or throughput, it is widely accepted the projection type lithography is the one of most fascinateing candidate for future excess 1 G electronics device fabrication. For realizing this technology as a successor of Excimer and/or proximity x-ray lithography, a long range research and development have already started in Japan, at first individual necessitate component such as conpact SR source, typically SiC substrate mirror and multilayer mirror fabrications, including optical design works [5] for this purpose.
软x射线投影式光刻技术被认为是未来电子器件生产中最具吸引力的技术,特别是自从实现了正入射软x射线反射镜以来[1]。例如,Kinoshita等[2]和其他团队[3,4]已经证明了该技术的可行性,他们采用了由正镜组成的史瓦西光学系统。如果忽略工艺速度或吞吐量,人们普遍认为投影式光刻是未来超1g电子器件制造最迷人的候选之一。为了实现这项技术作为准分子和/或接近x射线光刻的继承者,日本已经开始了长期的研究和开发,首先是单个必要的组件,如紧凑的SR源,典型的SiC衬底反射镜和多层反射镜制造,包括为此目的的光学设计工作[5]。
{"title":"The State of Soft X-ray Projection Lithography in Japan","authors":"S. Ogura","doi":"10.1364/sxray.1992.ma4","DOIUrl":"https://doi.org/10.1364/sxray.1992.ma4","url":null,"abstract":"Soft X-ray projection type Lithography has been expected to be most atractive technology in future electronics device production, paticularly since the realization of normal incidence soft x-ray mirror [1]. For instance, Kinoshita et al [2] and other groups [3,4] have already shown the feasibility of this technology, adopting a Schwartzschild optical system composed of normal mirrors. If neglecting process speed or throughput, it is widely accepted the projection type lithography is the one of most fascinateing candidate for future excess 1 G electronics device fabrication. For realizing this technology as a successor of Excimer and/or proximity x-ray lithography, a long range research and development have already started in Japan, at first individual necessitate component such as conpact SR source, typically SiC substrate mirror and multilayer mirror fabrications, including optical design works [5] for this purpose.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123226110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Ray-PN Resist for Soft-X-Ray Projection Lithography 软x射线投影光刻用射线- pn抗蚀剂的表征
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.wc3
K. Early, D. Tennant, D. Jeon, P. Mulgrew, A. MacDowell, O. Wood, G. Kubiak, D. Tichenor
To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.
为了在集成电路(IC)制造中发挥作用,阻片工艺必须具有高通量和良好的模式转移能力,以及高分辨率。1990年,利用λ = 14 nm的20×史瓦西光学,对聚甲基丙烯酸甲酯(PMMA)抗光膜中50 nm宽的线条和空间进行了成像。1,2 PMMA长期以来以其极高的分辨率和良好的工艺纬度而闻名,但其低灵敏度和较差的等离子体耐蚀性使其不太可能成为集成电路制造工艺的候选者。
{"title":"Characterization of Ray-PN Resist for Soft-X-Ray Projection Lithography","authors":"K. Early, D. Tennant, D. Jeon, P. Mulgrew, A. MacDowell, O. Wood, G. Kubiak, D. Tichenor","doi":"10.1364/sxray.1992.wc3","DOIUrl":"https://doi.org/10.1364/sxray.1992.wc3","url":null,"abstract":"To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131179272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Continuous Emission Source Covering the 50 to 300 Angstrom Band 覆盖50至300埃波段的连续发射源
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.mc4
S. Bowyer
Because of the growing importance of extreme ultraviolet radiation, there is considerable interest in high intensity laboratory sources for this spectral range. A variety of sources have been proposed for these wavelengths, and many of these are described in the classic book of Samson (1967). Most of these sources have substantial limitations, especially those that are intended for use below 1200 Å. We (Paresce et al. 1971) and others have developed continuous discharge sources which are stable and maintenance-free and which provide a large number of intense lines at wavelengths down to ~300 Å. Soft X-ray sources of the type developed and refined by Henke (1975) are capable of producing substantial amounts of soft X-ray radiation. However, these sources have severe limitations for use at wavelengths longer than ~50 Å. For example, much of the radiation produced is continuum radiation with rather low flux at any specific line. In addition, the flux is peaked at shorter wavelengths. When dispersed by a grazing incidence monochromator, wavelengths at first order and many higher orders emerge from the exit slit, rather than a true monochromatic flux which is usually desired. Essentially the only sources available that can provide reasonable flux levels at wavelengths between 50 and 300 Å are capacitive discharge sources with attendant problems of severe electromagnetic interference, and plasma discharge sources.
由于极紫外辐射的重要性日益增加,对这一光谱范围的高强度实验室光源有相当大的兴趣。针对这些波长提出了各种各样的光源,其中许多都在Samson(1967)的经典著作中进行了描述。这些来源中的大多数都有很大的限制,特别是那些打算用于1200 Å以下的来源。我们(Paresce et al. 1971)和其他人已经开发出稳定且免维护的连续放电源,并在波长低至~300 Å的情况下提供大量强谱线。Henke(1975)开发和改进的软x射线源能够产生大量的软x射线辐射。然而,这些光源对于波长超过~50 Å的使用有严重的限制。例如,产生的大部分辐射是连续辐射,在任何特定线上的通量都相当低。此外,通量在较短波长处达到峰值。当被掠入射单色器分散时,一阶和许多更高阶的波长从出口狭缝出现,而不是通常期望的真正的单色通量。从本质上讲,唯一可用的可以在波长50到300 Å之间提供合理通量水平的源是伴随严重电磁干扰问题的电容放电源和等离子体放电源。
{"title":"A Continuous Emission Source Covering the 50 to 300 Angstrom Band","authors":"S. Bowyer","doi":"10.1364/sxray.1992.mc4","DOIUrl":"https://doi.org/10.1364/sxray.1992.mc4","url":null,"abstract":"Because of the growing importance of extreme ultraviolet radiation, there is considerable interest in high intensity laboratory sources for this spectral range. A variety of sources have been proposed for these wavelengths, and many of these are described in the classic book of Samson (1967). Most of these sources have substantial limitations, especially those that are intended for use below 1200 Å. We (Paresce et al. 1971) and others have developed continuous discharge sources which are stable and maintenance-free and which provide a large number of intense lines at wavelengths down to ~300 Å. Soft X-ray sources of the type developed and refined by Henke (1975) are capable of producing substantial amounts of soft X-ray radiation. However, these sources have severe limitations for use at wavelengths longer than ~50 Å. For example, much of the radiation produced is continuum radiation with rather low flux at any specific line. In addition, the flux is peaked at shorter wavelengths. When dispersed by a grazing incidence monochromator, wavelengths at first order and many higher orders emerge from the exit slit, rather than a true monochromatic flux which is usually desired. Essentially the only sources available that can provide reasonable flux levels at wavelengths between 50 and 300 Å are capacitive discharge sources with attendant problems of severe electromagnetic interference, and plasma discharge sources.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116076901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multilayer Performance for Soft X-ray Schwarzchild Optics 软x射线史瓦西光学的多层性能
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.tub4
G. Gutman, K. Parker, J. Wood, R. Watts
One of the most important requirements for soft x-ray optics is high normal incidence reflectivity. But to ensure a high throughput optical system, Schwarzchild objectives in particular, it is not only necessary to fabricate multilayer coatings with the highest possible reflectivity but to achieve the designed d-spacing uniformity/grading and match the d-spacings of the concave and convex mirrors. The latter is especially important for high throughput multi-mirror lithography optical schemes.[1]
软x射线光学最重要的要求之一是高入射反射率。但是,为了确保高通量光学系统,特别是史瓦西物镜,不仅需要制造具有最高反射率的多层涂层,还需要实现设计的d间距均匀性/分级,并匹配凹面镜和凸面镜的d间距。后者对于高通量多镜光刻光学方案尤为重要。[1]
{"title":"Multilayer Performance for Soft X-ray Schwarzchild Optics","authors":"G. Gutman, K. Parker, J. Wood, R. Watts","doi":"10.1364/sxray.1992.tub4","DOIUrl":"https://doi.org/10.1364/sxray.1992.tub4","url":null,"abstract":"One of the most important requirements for soft x-ray optics is high normal incidence reflectivity. But to ensure a high throughput optical system, Schwarzchild objectives in particular, it is not only necessary to fabricate multilayer coatings with the highest possible reflectivity but to achieve the designed d-spacing uniformity/grading and match the d-spacings of the concave and convex mirrors. The latter is especially important for high throughput multi-mirror lithography optical schemes.[1]","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124840276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sputtering Deposited Ta/Si Soft X-ray Multilayer Mirror 溅射沉积Ta/Si软x射线多层反射镜
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1992.pd6
Shao Jianda, Fan Zhengxiu
30 layers of Ta/Si alternative structure prepared by plane magneton sputtering has been ehoosen for 234A x-ray mirror. Its characterizations indicated that it is expected to get the real reflectivity of about 10%.
采用平面磁控溅射法制备了30层Ta/Si交替结构,用于234A x射线反射镜。其特性表明,实际反射率有望达到10%左右。
{"title":"Sputtering Deposited Ta/Si Soft X-ray Multilayer Mirror","authors":"Shao Jianda, Fan Zhengxiu","doi":"10.1364/sxray.1992.pd6","DOIUrl":"https://doi.org/10.1364/sxray.1992.pd6","url":null,"abstract":"30 layers of Ta/Si alternative structure prepared by plane magneton sputtering has been ehoosen for 234A x-ray mirror. Its characterizations indicated that it is expected to get the real reflectivity of about 10%.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129994224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schwarzschild microscope at λ =7 nm 施瓦西显微镜在λ =7 nm
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1991.tha3
K. Tanaka, M. Kado, H. Daido, T. Yamanaka, S. Nakai, K. Yamashita, S. Kitamoto
X-ray imaging optics have been essential diagnostics in inertial confinement fusion (ICF) research. A micro pellet (<1mm dia.) is irradiated by a giant multi-beam laser system. This pellet is imploded to create a thermonuclear fusion condition, making use of the inertia of the imploding pellet wall. It is of critical importance for ICF to measure nonuniformities at the implosion core(~ 100μm) or the laser spot in order to drive the pellet to a very high density. Such measurements require a spatial resolution of less than 1μm. We have chosen to build a Schwarzschild type x-ray microscope with a magnification of 15. This x-ray microscope can be applied to fields other than laser fusion, such as lithography, biology’ and medicine. This can be a powerful tool when coupled with laser plasma x rays(LAPLAX), since the high brightness and temporal resolution (<1ns) of LAPLAX is added to the high spatial resolution.
在惯性约束聚变(ICF)研究中,x射线成像光学已成为必不可少的诊断手段。用一个巨大的多光束激光系统照射直径小于1mm的微球。利用内爆球壁的惯性,这个球团被内爆以创造一个热核融合的条件。测量内爆核心(~ 100μm)或激光光斑处的非均匀性对于驱动颗粒达到非常高的密度至关重要。此类测量要求的空间分辨率小于1μm。我们选择建造一台史瓦西型x射线显微镜,放大倍数为15倍。这种x射线显微镜可以应用于激光聚变以外的领域,如光刻、生物学和医学。当与激光等离子体x射线(LAPLAX)相结合时,它可以成为一个强大的工具,因为LAPLAX的高亮度和时间分辨率(<1ns)增加了高空间分辨率。
{"title":"Schwarzschild microscope at λ =7 nm","authors":"K. Tanaka, M. Kado, H. Daido, T. Yamanaka, S. Nakai, K. Yamashita, S. Kitamoto","doi":"10.1364/sxray.1991.tha3","DOIUrl":"https://doi.org/10.1364/sxray.1991.tha3","url":null,"abstract":"X-ray imaging optics have been essential diagnostics in inertial confinement fusion (ICF) research. A micro pellet (<1mm dia.) is irradiated by a giant multi-beam laser system. This pellet is imploded to create a thermonuclear fusion condition, making use of the inertia of the imploding pellet wall. It is of critical importance for ICF to measure nonuniformities at the implosion core(~ 100μm) or the laser spot in order to drive the pellet to a very high density. Such measurements require a spatial resolution of less than 1μm. We have chosen to build a Schwarzschild type x-ray microscope with a magnification of 15. This x-ray microscope can be applied to fields other than laser fusion, such as lithography, biology’ and medicine. This can be a powerful tool when coupled with laser plasma x rays(LAPLAX), since the high brightness and temporal resolution (<1ns) of LAPLAX is added to the high spatial resolution.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126988393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Illumination Requirements for Optical Projectors: and how to think about them 光学投影机的照明要求:以及如何考虑这些要求
Pub Date : 1900-01-01 DOI: 10.1364/sxray.1991.fb1
D. Goodman
Illumination systems are often given too little thought, since the main lens in a projector is usually much more difficult, and because many of the effects of non-optimimum illumination are too small to be noticed in many applications. For modern chip lithography, however, nothing can be assumed negligible.
由于投影机的主镜头通常要困难得多,而且由于许多非最佳照明的影响太小,在许多应用中都注意不到,因此照明系统通常被考虑得太少。然而,对于现代芯片光刻,没有什么是可以忽略不计的。
{"title":"Illumination Requirements for Optical Projectors: and how to think about them","authors":"D. Goodman","doi":"10.1364/sxray.1991.fb1","DOIUrl":"https://doi.org/10.1364/sxray.1991.fb1","url":null,"abstract":"Illumination systems are often given too little thought, since the main lens in a projector is usually much more difficult, and because many of the effects of non-optimimum illumination are too small to be noticed in many applications. For modern chip lithography, however, nothing can be assumed negligible.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123738932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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Soft-X-Ray Projection Lithography
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