A projection x-ray lithography system requires a laser system with output of approximately 1 J/pulse, 2 to 3 ns pulselength and a repetition rate of 400 Hz. We have designed a laser diode pumped Nd:YLF rod laser system meeting these requirements. It consists of a power oscillator running at 0.5 J/pulse and 20 ns pulselength followed by a 2x power amplifier. The output pulse is shortened to 2.5 ns by an SBS pulse compressor. We discuss the detailed design criteria for the laser and the experiments which support the design.
{"title":"Laser Driver for Projection X-ray Lithography","authors":"L. Hackel, R. Beach","doi":"10.1364/sxray.1992.wb2","DOIUrl":"https://doi.org/10.1364/sxray.1992.wb2","url":null,"abstract":"A projection x-ray lithography system requires a laser system with output of approximately 1 J/pulse, 2 to 3 ns pulselength and a repetition rate of 400 Hz. We have designed a laser diode pumped Nd:YLF rod laser system meeting these requirements. It consists of a power oscillator running at 0.5 J/pulse and 20 ns pulselength followed by a 2x power amplifier. The output pulse is shortened to 2.5 ns by an SBS pulse compressor. We discuss the detailed design criteria for the laser and the experiments which support the design.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124344983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The results of carbon and oxide contamination experiments with Al, Si, Rh, and Ag films and surfaces quantify certain film growth rates and parameter dependences.
Al, Si, Rh和Ag薄膜和表面的碳和氧化物污染实验结果量化了某些薄膜生长速率和参数依赖性。
{"title":"Contamination Studies of XUV Reflecting Surfaces for Projection Lithography*","authors":"B. Newnam, M. L. Scott","doi":"10.1364/sxray.1992.pd3","DOIUrl":"https://doi.org/10.1364/sxray.1992.pd3","url":null,"abstract":"The results of carbon and oxide contamination experiments with Al, Si, Rh, and Ag films and surfaces quantify certain film growth rates and parameter dependences.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114434424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Ceglio, A. Hawryluk, D. G. Steams, D. Gaines, R. Rosen, S. Vernon
Recent analyses of critical system issues in Soft X-ray Projection Lithography are discussed. An overall system design provides detailed requirements (specifications) for x-ray mirror reflectivity, source power and parameters, resist sensitivity, etc. A cost analysis for SXPL systems leads to important requirements for x-ray mirror technology. An analysis of power loading limitations on precision SXPL imaging optics has important implications for source power and x-ray mirror reflectivity requirements.
{"title":"Soft X-ray Projection Lithography Technology*","authors":"N. Ceglio, A. Hawryluk, D. G. Steams, D. Gaines, R. Rosen, S. Vernon","doi":"10.1364/sxray.1991.wd1","DOIUrl":"https://doi.org/10.1364/sxray.1991.wd1","url":null,"abstract":"Recent analyses of critical system issues in Soft X-ray Projection Lithography are discussed. An overall system design provides detailed requirements (specifications) for x-ray mirror reflectivity, source power and parameters, resist sensitivity, etc. A cost analysis for SXPL systems leads to important requirements for x-ray mirror technology. An analysis of power loading limitations on precision SXPL imaging optics has important implications for source power and x-ray mirror reflectivity requirements.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123642829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soft-x-ray projection lithography (SXPL) will use a reflective mask consisting of an x-ray multilayer mirror, patterned with a thin (~50-100 nm) layer of gold. Pattern repair techniques that do not degrade the multilayer mirror reflectivity must be developed if SXPL is to become an acceptable choice for lithography. Mask repair results from both clear and opaque mask repair experiments are discussed and analyzed.
{"title":"Reflection Mask Repair for Soft-X-Ray Projection Lithography","authors":"A. Hawryluk, D. Gaines, D. Stewart","doi":"10.1364/sxray.1992.wd3","DOIUrl":"https://doi.org/10.1364/sxray.1992.wd3","url":null,"abstract":"Soft-x-ray projection lithography (SXPL) will use a reflective mask consisting of an x-ray multilayer mirror, patterned with a thin (~50-100 nm) layer of gold. Pattern repair techniques that do not degrade the multilayer mirror reflectivity must be developed if SXPL is to become an acceptable choice for lithography. Mask repair results from both clear and opaque mask repair experiments are discussed and analyzed.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126178441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There is great indecision in the semiconductor industry as to what the lithography technology will be for the back half of the 1990's (1995-2000). When applied against an idealized process requirements model, all technologies have problems which make the choice extremely expensive and difficult. Technologies considered are: optical extensions, e beam technologies, ion beam technologies, and x-ray technologies. This paper discusses the main technologies with a description of the advantages and disadvantages.
{"title":"Lithography - \"The technology to he used is ????\"","authors":"R. Hill","doi":"10.1364/sxray.1992.ma2","DOIUrl":"https://doi.org/10.1364/sxray.1992.ma2","url":null,"abstract":"There is great indecision in the semiconductor industry as to what the lithography technology will be for the back half of the 1990's (1995-2000). When applied against an idealized process requirements model, all technologies have problems which make the choice extremely expensive and difficult. Technologies considered are: optical extensions, e beam technologies, ion beam technologies, and x-ray technologies. This paper discusses the main technologies with a description of the advantages and disadvantages.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124802052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The efficiency of most popular approach to generating short wavelength radiation involving particle beams, FEL1, is limited by the Thomson scattering cross section. If one were to use a beam of particles having a resonant scattering cross section for some frequency, a greatly enhanced gain might be expected. A natural candidate is a hydrogenic positive ion, having Z > 2, with a single bound electron. The fact that the ion is charged allows the beam to be accelerated to relativistic energies (γ≫ 1), therefore one can exploit the properties of relativistic kinematics which dictate that the back scattered radiation will have its wavelength shortened by a factor (2γ)2.
{"title":"Coherent X-Ray Generation Via Laser Pumping of a Relativistic Ion Beam - Feasibility Assessment","authors":"S. Bogacz","doi":"10.1364/sxray.1991.wa3","DOIUrl":"https://doi.org/10.1364/sxray.1991.wa3","url":null,"abstract":"The efficiency of most popular approach to generating short wavelength radiation involving particle beams, FEL1, is limited by the Thomson scattering cross section. If one were to use a beam of particles having a resonant scattering cross section for some frequency, a greatly enhanced gain might be expected. A natural candidate is a hydrogenic positive ion, having Z > 2, with a single bound electron. The fact that the ion is charged allows the beam to be accelerated to relativistic energies (γ≫ 1), therefore one can exploit the properties of relativistic kinematics which dictate that the back scattered radiation will have its wavelength shortened by a factor (2γ)2.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126942605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Haney, K. Berger, G. Kubiak, P. Rockett, J. Hunter
We describe a vacuum-compatible, high-speed tape target drive for use in a high-repetition-rate laser plasma SXPL source. Preliminary results are presented for its operation in vacuum using commercially-available tape and a ~1 J/pulse KrF excimer laser operating at 92 Hz.
{"title":"High-Speed Tape Target Transport for Laser Plasma SXPL Source*","authors":"S. Haney, K. Berger, G. Kubiak, P. Rockett, J. Hunter","doi":"10.1364/sxray.1992.pd2","DOIUrl":"https://doi.org/10.1364/sxray.1992.pd2","url":null,"abstract":"We describe a vacuum-compatible, high-speed tape target drive for use in a high-repetition-rate laser plasma SXPL source. Preliminary results are presented for its operation in vacuum using commercially-available tape and a ~1 J/pulse KrF excimer laser operating at 92 Hz.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126526106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using soft X-rays with a wavelength of 13 nm, a diffraction limited projection system with an NA of about 0.09 would have a resolution of about 0.1 μm. The corresponding Rayleigh depth of focus would be about 1.6 μm. Several catoptric reduction designs for use in this regime have been proposed, but they are limited to very small field sizes, because of the difficulty of controlling geometric aberrations. In addition, central obscuration in some designs (e.g. the Schwarzschild), further reduces image modulation. The use of aspheric mirrors can improve the performance, but the figuring and in particular testing of such surfaces at these wavelengths are major challenges. In addition, the alignment of such an aspheric system is a far from trivial undertaking. An alternative approach is to adopt a unit magnification optical system, and make use of the inherent freedom from aberrations such a configuration can posess. Such an approach, using the Offner ring field design, has been proposed by Wood et al [1]. An objection that is often raised to 1× lithography in general is the perceived difficulty of making masks. It is shown that the assumptions customarily made to extrapolate 5× mask specifications down to the 1× level are fallacious. In particular, evidence is presented that error distributions do not, as is commonly assumed, lie on a Gaussian. Even more importantly, the errors are not distributed evenly over the mask: it is shown how this fact, in particular, greatly eases the supposed difficulty of making 1× masks.
{"title":"1× Reflective X-Ray Optics","authors":"R. Pease, N. Maluf, D. Markle, G. Owen","doi":"10.1364/sxray.1992.tua6","DOIUrl":"https://doi.org/10.1364/sxray.1992.tua6","url":null,"abstract":"Using soft X-rays with a wavelength of 13 nm, a diffraction limited projection system with an NA of about 0.09 would have a resolution of about 0.1 μm. The corresponding Rayleigh depth of focus would be about 1.6 μm. Several catoptric reduction designs for use in this regime have been proposed, but they are limited to very small field sizes, because of the difficulty of controlling geometric aberrations. In addition, central obscuration in some designs (e.g. the Schwarzschild), further reduces image modulation. The use of aspheric mirrors can improve the performance, but the figuring and in particular testing of such surfaces at these wavelengths are major challenges. In addition, the alignment of such an aspheric system is a far from trivial undertaking. An alternative approach is to adopt a unit magnification optical system, and make use of the inherent freedom from aberrations such a configuration can posess. Such an approach, using the Offner ring field design, has been proposed by Wood et al [1]. An objection that is often raised to 1× lithography in general is the perceived difficulty of making masks. It is shown that the assumptions customarily made to extrapolate 5× mask specifications down to the 1× level are fallacious. In particular, evidence is presented that error distributions do not, as is commonly assumed, lie on a Gaussian. Even more importantly, the errors are not distributed evenly over the mask: it is shown how this fact, in particular, greatly eases the supposed difficulty of making 1× masks.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116695399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Sheffield, B. Carlsten, K. C. Dominic Chan, J. Goldstein, M. Lynch, B. Newnam, D. Nguyen, D. Prono, R. Warren
We present the design and calculated performance for a 20-W XUV-FEL source for 60-nm projection lithography. The compact design features an 85-MeV rf linear accelerator with photoinjector, and a pulsed microwiggler with multifacet resonator optics.
{"title":"Conceptual Design Of a 60-nm Free-Electron Laser for XUV Projection Lithography*","authors":"R. Sheffield, B. Carlsten, K. C. Dominic Chan, J. Goldstein, M. Lynch, B. Newnam, D. Nguyen, D. Prono, R. Warren","doi":"10.1364/sxray.1992.pd1","DOIUrl":"https://doi.org/10.1364/sxray.1992.pd1","url":null,"abstract":"We present the design and calculated performance for a 20-W XUV-FEL source for 60-nm projection lithography. The compact design features an 85-MeV rf linear accelerator with photoinjector, and a pulsed microwiggler with multifacet resonator optics.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116111444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of reflective optics for projection soft x-ray lithography will require new tools, previously available only at longer wavelengths. Among these is a test facility for large numerical aperture interferometry at short wavelengths. As with visible light interferometry this is most effectively done with coherent radiation. In this paper we discuss the spatial and temporal coherence properties of undulator radiation, wavelength tuning range, design tradeoffs involving harmonic content and thermal loading, and challenges associated with at-wavelength interferometry of complex surfaces. Preliminary plans for such a facility at Berkeley's Advanced Light Source will be discussed. This work is supported by DARPA, AFOSR, and DOE/BES.
{"title":"An Undulator Facility for Precision Optical Testing","authors":"D. Attwood","doi":"10.1364/sxray.1992.tuc1","DOIUrl":"https://doi.org/10.1364/sxray.1992.tuc1","url":null,"abstract":"The development of reflective optics for projection soft x-ray lithography will require new tools, previously available only at longer wavelengths. Among these is a test facility for large numerical aperture interferometry at short wavelengths. As with visible light interferometry this is most effectively done with coherent radiation. In this paper we discuss the spatial and temporal coherence properties of undulator radiation, wavelength tuning range, design tradeoffs involving harmonic content and thermal loading, and challenges associated with at-wavelength interferometry of complex surfaces. Preliminary plans for such a facility at Berkeley's Advanced Light Source will be discussed. This work is supported by DARPA, AFOSR, and DOE/BES.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124703088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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